FR1143213A - Procédé d'application de couches de métal précieux sur un corps semi-conducteur - Google Patents
Procédé d'application de couches de métal précieux sur un corps semi-conducteurInfo
- Publication number
- FR1143213A FR1143213A FR1143213DA FR1143213A FR 1143213 A FR1143213 A FR 1143213A FR 1143213D A FR1143213D A FR 1143213DA FR 1143213 A FR1143213 A FR 1143213A
- Authority
- FR
- France
- Prior art keywords
- metal layers
- semiconductor body
- precious metal
- applying precious
- applying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010970 precious metal Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Electrolytic Production Of Metals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL354169X | 1954-12-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1143213A true FR1143213A (fr) | 1957-09-27 |
Family
ID=19785152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1143213D Expired FR1143213A (fr) | 1954-12-06 | 1955-12-05 | Procédé d'application de couches de métal précieux sur un corps semi-conducteur |
Country Status (7)
Country | Link |
---|---|
US (1) | US2865793A (fr) |
BE (1) | BE543390A (fr) |
CH (1) | CH354169A (fr) |
DE (1) | DE1255820B (fr) |
FR (1) | FR1143213A (fr) |
GB (1) | GB800557A (fr) |
NL (2) | NL99205C (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2844918A1 (fr) * | 2002-09-20 | 2004-03-26 | Commissariat Energie Atomique | Procede de fabrication d'electrodes sur un materiau semi- conducteur de type ii-vi ou sur un compose de ce materiau |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3187414A (en) * | 1959-02-05 | 1965-06-08 | Baldwin Co D H | Method of producing a photocell assembly |
NL122459C (fr) * | 1960-05-13 | |||
US3208835A (en) * | 1961-04-27 | 1965-09-28 | Westinghouse Electric Corp | Thermoelectric members |
US3271591A (en) * | 1963-09-20 | 1966-09-06 | Energy Conversion Devices Inc | Symmetrical current controlling device |
US3366518A (en) * | 1964-07-01 | 1968-01-30 | Ibm | High sensitivity diodes |
US3523038A (en) * | 1965-06-02 | 1970-08-04 | Texas Instruments Inc | Process for making ohmic contact to planar germanium semiconductor devices |
US4468685A (en) * | 1980-03-27 | 1984-08-28 | Farrow Robin F C | Infrared detector using grey tin |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2560979A (en) * | 1948-07-30 | 1951-07-17 | Padio Corp Of America | Chemical deposition of metallic films |
US2677715A (en) * | 1950-09-23 | 1954-05-04 | Alois Vogt Dr | Optical-electrical conversion device comprising a light-permeable metal electrode |
US2710813A (en) * | 1951-01-02 | 1955-06-14 | Rca Corp | Cadmium selenide-zinc selenide photoconductive electrode and method of producing same |
-
0
- NL NL192972D patent/NL192972A/xx unknown
- NL NL99205D patent/NL99205C/xx active
- BE BE543390D patent/BE543390A/xx unknown
-
1955
- 1955-11-29 US US549754A patent/US2865793A/en not_active Expired - Lifetime
- 1955-12-02 GB GB34561/55A patent/GB800557A/en not_active Expired
- 1955-12-02 DE DEN11528A patent/DE1255820B/de active Pending
- 1955-12-05 FR FR1143213D patent/FR1143213A/fr not_active Expired
- 1955-12-05 CH CH354169D patent/CH354169A/de unknown
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2844918A1 (fr) * | 2002-09-20 | 2004-03-26 | Commissariat Energie Atomique | Procede de fabrication d'electrodes sur un materiau semi- conducteur de type ii-vi ou sur un compose de ce materiau |
WO2004027854A2 (fr) * | 2002-09-20 | 2004-04-01 | Commissariat A L'energie Atomique | Procede de fabrication d'electrodes sur un materiau semi-conducteur de type ii-vi |
WO2004027854A3 (fr) * | 2002-09-20 | 2004-07-08 | Commissariat Energie Atomique | Procede de fabrication d'electrodes sur un materiau semi-conducteur de type ii-vi |
US7553746B2 (en) | 2002-09-20 | 2009-06-30 | Commissariat A L'energie Atomique | Method for manufacturing electrodes on a semiconducting material of type II-VI or on a compound of this material |
Also Published As
Publication number | Publication date |
---|---|
GB800557A (en) | 1958-08-27 |
NL192972A (fr) | |
CH354169A (de) | 1961-05-15 |
BE543390A (fr) | |
US2865793A (en) | 1958-12-23 |
NL99205C (fr) | |
DE1255820B (de) | 1967-12-07 |
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