FR1133946A - Nouveau procédé de préparation des jonctions p-n - Google Patents
Nouveau procédé de préparation des jonctions p-nInfo
- Publication number
- FR1133946A FR1133946A FR1133946DA FR1133946A FR 1133946 A FR1133946 A FR 1133946A FR 1133946D A FR1133946D A FR 1133946DA FR 1133946 A FR1133946 A FR 1133946A
- Authority
- FR
- France
- Prior art keywords
- junctions
- preparing
- new process
- new
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US436816A US2842466A (en) | 1954-06-15 | 1954-06-15 | Method of making p-nu junction semiconductor unit |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1133946A true FR1133946A (fr) | 1957-04-03 |
Family
ID=23733936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1133946D Expired FR1133946A (fr) | 1954-06-15 | 1955-06-15 | Nouveau procédé de préparation des jonctions p-n |
Country Status (3)
Country | Link |
---|---|
US (1) | US2842466A (fr) |
FR (1) | FR1133946A (fr) |
GB (1) | GB809330A (fr) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1148316A (fr) * | 1959-10-20 | 1957-12-06 | Thomson Houston Comp Francaise | Procédé et appareil pour la réalisation de circuits imprimés |
US3293010A (en) * | 1964-01-02 | 1966-12-20 | Motorola Inc | Passivated alloy diode |
US3383567A (en) * | 1965-09-15 | 1968-05-14 | Ion Physics Corp | Solid state translating device comprising irradiation implanted conductivity ions |
US3421055A (en) * | 1965-10-01 | 1969-01-07 | Texas Instruments Inc | Structure and method for preventing spurious growths during epitaxial deposition of semiconductor material |
US3434894A (en) * | 1965-10-06 | 1969-03-25 | Ion Physics Corp | Fabricating solid state devices by ion implantation |
US3459603A (en) * | 1966-01-12 | 1969-08-05 | Us Air Force | Method for preparing electroluminescent light sources |
US3496029A (en) * | 1966-10-12 | 1970-02-17 | Ion Physics Corp | Process of doping semiconductor with analyzing magnet |
US3629011A (en) * | 1967-09-11 | 1971-12-21 | Matsushita Electric Ind Co Ltd | Method for diffusing an impurity substance into silicon carbide |
US3634738A (en) * | 1970-10-06 | 1972-01-11 | Kev Electronics Corp | Diode having a voltage variable capacitance characteristic and method of making same |
DE2408829C2 (de) * | 1974-02-23 | 1984-03-22 | Ibm Deutschland Gmbh, 7000 Stuttgart | Bor-Ionenquell-Material und Verfahren zu seiner Herstellung |
US3979272A (en) * | 1974-07-18 | 1976-09-07 | The United States Of America As Represented By The Secretary Of The Army | Method of producing semiconductor devices with minority charge carriers having a long lifetime and devices produced thereby |
GB2156383A (en) * | 1984-02-06 | 1985-10-09 | Plessey Co Plc | Infra-red material structures |
US4876984A (en) * | 1987-06-12 | 1989-10-31 | Ricoh Company, Ltd. | Apparatus for forming a thin film |
US4904616A (en) * | 1988-07-25 | 1990-02-27 | Air Products And Chemicals, Inc. | Method of depositing arsine, antimony and phosphine substitutes |
US4988640A (en) * | 1988-07-25 | 1991-01-29 | Air Products And Chemicals, Inc. | Method of doping and implanting using arsine, antimony, and phosphine substitutes |
US5977552A (en) * | 1995-11-24 | 1999-11-02 | Applied Materials, Inc. | Boron ion sources for ion implantation apparatus |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2563503A (en) * | 1951-08-07 | Transistor | ||
US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
DE840418C (de) * | 1949-05-30 | 1952-06-05 | Licentia Gmbh | Verfahren zum Herstellen Stoerstellen enthaltender Halbleiter, insbesondere fuer Trockengleichrichter |
BE500302A (fr) * | 1949-11-30 | |||
NL88584C (fr) * | 1950-01-31 | |||
US2695852A (en) * | 1952-02-15 | 1954-11-30 | Bell Telephone Labor Inc | Fabrication of semiconductors for signal translating devices |
US2842723A (en) * | 1952-04-15 | 1958-07-08 | Licentia Gmbh | Controllable asymmetric electrical conductor systems |
-
1954
- 1954-06-15 US US436816A patent/US2842466A/en not_active Expired - Lifetime
-
1955
- 1955-06-03 GB GB16032/55A patent/GB809330A/en not_active Expired
- 1955-06-15 FR FR1133946D patent/FR1133946A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US2842466A (en) | 1958-07-08 |
GB809330A (en) | 1959-02-25 |
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