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FR1131253A - Perfectionnements aux transistors à effet de champ - Google Patents

Perfectionnements aux transistors à effet de champ

Info

Publication number
FR1131253A
FR1131253A FR1131253DA FR1131253A FR 1131253 A FR1131253 A FR 1131253A FR 1131253D A FR1131253D A FR 1131253DA FR 1131253 A FR1131253 A FR 1131253A
Authority
FR
France
Prior art keywords
field
effect transistors
transistors
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
CSF Compagnie Generale de Telegraphie sans Fil SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSF Compagnie Generale de Telegraphie sans Fil SA filed Critical CSF Compagnie Generale de Telegraphie sans Fil SA
Application granted granted Critical
Publication of FR1131253A publication Critical patent/FR1131253A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
FR1131253D 1955-09-14 1955-09-14 Perfectionnements aux transistors à effet de champ Expired FR1131253A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1131253T 1955-09-14

Publications (1)

Publication Number Publication Date
FR1131253A true FR1131253A (fr) 1957-02-19

Family

ID=9637786

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1131253D Expired FR1131253A (fr) 1955-09-14 1955-09-14 Perfectionnements aux transistors à effet de champ

Country Status (1)

Country Link
FR (1) FR1131253A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1083938B (de) * 1957-09-23 1960-06-23 Nat Res Dev Halbleiteranordnung mit einem Halbleiter-koerper aus Halbleitermaterial eines Leitungstyps
DE1227562B (de) * 1959-12-11 1966-10-27 Gen Electric Verfahren zum Herstellen von Tunneldioden nach Esaki fuer hohe Frequenzen mit kleinerPN-UEbergangsflaeche und nach diesem Verfahren hergestellte Tunneldioden

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1083938B (de) * 1957-09-23 1960-06-23 Nat Res Dev Halbleiteranordnung mit einem Halbleiter-koerper aus Halbleitermaterial eines Leitungstyps
DE1227562B (de) * 1959-12-11 1966-10-27 Gen Electric Verfahren zum Herstellen von Tunneldioden nach Esaki fuer hohe Frequenzen mit kleinerPN-UEbergangsflaeche und nach diesem Verfahren hergestellte Tunneldioden

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