FR1106990A - Dispositifs semi-conducteurs en silicium, et procédés de fabrication de ceux-ci - Google Patents
Dispositifs semi-conducteurs en silicium, et procédés de fabrication de ceux-ciInfo
- Publication number
- FR1106990A FR1106990A FR1106990DA FR1106990A FR 1106990 A FR1106990 A FR 1106990A FR 1106990D A FR1106990D A FR 1106990DA FR 1106990 A FR1106990 A FR 1106990A
- Authority
- FR
- France
- Prior art keywords
- methods
- semiconductor devices
- silicon semiconductor
- making same
- making
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S228/00—Metal fusion bonding
- Y10S228/903—Metal to nonmetal
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Fuses (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US389514A US2807561A (en) | 1953-11-02 | 1953-11-02 | Process of fusing materials to silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1106990A true FR1106990A (fr) | 1955-12-27 |
Family
ID=23538570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1106990D Expired FR1106990A (fr) | 1953-11-02 | 1954-08-31 | Dispositifs semi-conducteurs en silicium, et procédés de fabrication de ceux-ci |
Country Status (5)
Country | Link |
---|---|
US (1) | US2807561A (fr) |
BE (1) | BE533003A (fr) |
FR (1) | FR1106990A (fr) |
GB (1) | GB760649A (fr) |
NL (2) | NL192008A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1080697B (de) * | 1957-08-07 | 1960-04-28 | Western Electric Co | Verfahren zur Herstellung von Halbleiterkoerpern einer Halbleiteranordnung |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2897587A (en) * | 1955-05-23 | 1959-08-04 | Philco Corp | Method of fabricating semiconductor devices |
NL199100A (fr) * | 1955-07-21 | |||
US2996800A (en) * | 1956-11-28 | 1961-08-22 | Texas Instruments Inc | Method of making ohmic connections to silicon semiconductors |
BE568830A (fr) * | 1957-06-25 | |||
NL241323A (fr) * | 1958-07-17 | 1900-01-01 | ||
US3119171A (en) * | 1958-07-23 | 1964-01-28 | Texas Instruments Inc | Method of making low resistance electrical contacts on graphite |
US3091849A (en) * | 1959-09-14 | 1963-06-04 | Pacific Semiconductors Inc | Method of bonding materials |
US3151008A (en) * | 1960-09-23 | 1964-09-29 | Sprague Electric Co | Method of forming a p-nu junction |
NL269600A (fr) * | 1960-09-27 | 1900-01-01 | ||
US3192081A (en) * | 1961-07-20 | 1965-06-29 | Raytheon Co | Method of fusing material and the like |
US3138495A (en) * | 1961-07-28 | 1964-06-23 | Texas Instruments Inc | Semiconductor device and method of manufacture |
US3242061A (en) * | 1962-03-07 | 1966-03-22 | Micro State Electronics Corp | Method of making a tunnel diode assembly |
US3175286A (en) * | 1963-10-04 | 1965-03-30 | Coast Metals Inc | Method of treating metal powders for brazing purposes |
US3175285A (en) * | 1963-10-04 | 1965-03-30 | Coast Metals Inc | Method of treating metal powders for brazing purposes |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2194200A (en) * | 1938-12-13 | 1940-03-19 | Western Pipe & Steel Company O | Electrical welding flux and method |
NL34436C (fr) * | 1945-04-20 |
-
0
- NL NL89732D patent/NL89732C/xx active
- BE BE533003D patent/BE533003A/xx unknown
- NL NL192008D patent/NL192008A/xx unknown
-
1953
- 1953-11-02 US US389514A patent/US2807561A/en not_active Expired - Lifetime
-
1954
- 1954-08-31 FR FR1106990D patent/FR1106990A/fr not_active Expired
- 1954-10-06 GB GB28822/54A patent/GB760649A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1080697B (de) * | 1957-08-07 | 1960-04-28 | Western Electric Co | Verfahren zur Herstellung von Halbleiterkoerpern einer Halbleiteranordnung |
Also Published As
Publication number | Publication date |
---|---|
GB760649A (en) | 1956-11-07 |
BE533003A (fr) | |
NL89732C (fr) | |
NL192008A (fr) | |
US2807561A (en) | 1957-09-24 |
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