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FI935854A0 - Puolijohteen, kuten piikiekon, prosessoinnissa käytettävä laitteisto ja menetelmä - Google Patents

Puolijohteen, kuten piikiekon, prosessoinnissa käytettävä laitteisto ja menetelmä

Info

Publication number
FI935854A0
FI935854A0 FI935854A FI935854A FI935854A0 FI 935854 A0 FI935854 A0 FI 935854A0 FI 935854 A FI935854 A FI 935854A FI 935854 A FI935854 A FI 935854A FI 935854 A0 FI935854 A0 FI 935854A0
Authority
FI
Finland
Prior art keywords
semiconductor
equipment
processing
silicon wafer
method used
Prior art date
Application number
FI935854A
Other languages
English (en)
Swedish (sv)
Other versions
FI95421C (fi
FI95421B (fi
FI935854A (fi
Inventor
Heikki Ihantola
Original Assignee
Heikki Ihantola
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heikki Ihantola filed Critical Heikki Ihantola
Priority to FI935854A priority Critical patent/FI95421C/fi
Publication of FI935854A0 publication Critical patent/FI935854A0/fi
Priority to US08/652,506 priority patent/US6174366B1/en
Priority to PCT/FI1994/000574 priority patent/WO1995018459A1/en
Priority to EP95903370A priority patent/EP0736223A1/en
Publication of FI935854A publication Critical patent/FI935854A/fi
Application granted granted Critical
Publication of FI95421B publication Critical patent/FI95421B/fi
Publication of FI95421C publication Critical patent/FI95421C/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
FI935854A 1993-12-23 1993-12-23 Puolijohteen, kuten piikiekon, prosessoinnissa käytettävä laitteisto ja menetelmä FI95421C (fi)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FI935854A FI95421C (fi) 1993-12-23 1993-12-23 Puolijohteen, kuten piikiekon, prosessoinnissa käytettävä laitteisto ja menetelmä
US08/652,506 US6174366B1 (en) 1993-12-23 1994-12-20 Apparatus and method for processing of semiconductors, such as silicon chips
PCT/FI1994/000574 WO1995018459A1 (en) 1993-12-23 1994-12-20 Apparatus and method for processing of semiconductors, such as silicon chips
EP95903370A EP0736223A1 (en) 1993-12-23 1994-12-20 Apparatus and method for processing of semiconductors, such as silicon chips

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI935854 1993-12-23
FI935854A FI95421C (fi) 1993-12-23 1993-12-23 Puolijohteen, kuten piikiekon, prosessoinnissa käytettävä laitteisto ja menetelmä

Publications (4)

Publication Number Publication Date
FI935854A0 true FI935854A0 (fi) 1993-12-23
FI935854A FI935854A (fi) 1995-06-24
FI95421B FI95421B (fi) 1995-10-13
FI95421C FI95421C (fi) 1996-01-25

Family

ID=8539180

Family Applications (1)

Application Number Title Priority Date Filing Date
FI935854A FI95421C (fi) 1993-12-23 1993-12-23 Puolijohteen, kuten piikiekon, prosessoinnissa käytettävä laitteisto ja menetelmä

Country Status (4)

Country Link
US (1) US6174366B1 (fi)
EP (1) EP0736223A1 (fi)
FI (1) FI95421C (fi)
WO (1) WO1995018459A1 (fi)

Families Citing this family (39)

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Publication number Priority date Publication date Assignee Title
US7232728B1 (en) * 1996-01-30 2007-06-19 Micron Technology, Inc. High quality oxide on an epitaxial layer
KR100319662B1 (ko) * 1997-04-28 2002-01-16 추후보충 진공처리방법 및 장치
WO2000063953A1 (fr) * 1999-04-16 2000-10-26 Tokyo Electron Limited Procede de production d'un dispositif a semi-conducteur et sa ligne de production
JP4578615B2 (ja) * 1999-07-21 2010-11-10 東京エレクトロン株式会社 熱処理装置
DE29915696U1 (de) * 1999-09-07 2001-01-18 Robert Bosch Gmbh, 70469 Stuttgart Ätzanlage zum HF-Dampfätzen
US6602323B2 (en) * 2001-03-21 2003-08-05 Samsung Electronics Co., Ltd. Method and apparatus for reducing PFC emission during semiconductor manufacture
US20070032046A1 (en) * 2001-07-06 2007-02-08 Dmitriev Vladimir A Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby
US6670071B2 (en) * 2002-01-15 2003-12-30 Quallion Llc Electric storage battery construction and method of manufacture
US6800172B2 (en) * 2002-02-22 2004-10-05 Micron Technology, Inc. Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor
US6858264B2 (en) * 2002-04-24 2005-02-22 Micron Technology, Inc. Chemical vapor deposition methods
US6814813B2 (en) * 2002-04-24 2004-11-09 Micron Technology, Inc. Chemical vapor deposition apparatus
US6821347B2 (en) * 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US20040011381A1 (en) * 2002-07-17 2004-01-22 Klebanoff Leonard E. Method for removing carbon contamination from optic surfaces
US6955725B2 (en) * 2002-08-15 2005-10-18 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
JP4093462B2 (ja) * 2002-10-09 2008-06-04 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US6926775B2 (en) * 2003-02-11 2005-08-09 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
US7335396B2 (en) * 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
US7344755B2 (en) * 2003-08-21 2008-03-18 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
US7235138B2 (en) * 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US7422635B2 (en) * 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7056806B2 (en) * 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
US7282239B2 (en) * 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7323231B2 (en) * 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7581511B2 (en) * 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7647886B2 (en) * 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US7258892B2 (en) 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7906393B2 (en) 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US20050268848A1 (en) * 2004-04-28 2005-12-08 Nanodynamics, Inc Atomic layer deposition apparatus and process
US20050249873A1 (en) * 2004-05-05 2005-11-10 Demetrius Sarigiannis Apparatuses and methods for producing chemically reactive vapors used in manufacturing microelectronic devices
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) * 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US20060165873A1 (en) * 2005-01-25 2006-07-27 Micron Technology, Inc. Plasma detection and associated systems and methods for controlling microfeature workpiece deposition processes
US20060237138A1 (en) * 2005-04-26 2006-10-26 Micron Technology, Inc. Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
TWI327761B (en) * 2005-10-07 2010-07-21 Rohm & Haas Elect Mat Method for making semiconductor wafer and wafer holding article
US7976897B2 (en) * 2007-02-21 2011-07-12 Micron Technology, Inc Thermal chemical vapor deposition methods, and thermal chemical vapor deposition systems
US8007275B2 (en) * 2008-01-25 2011-08-30 Micron Technology, Inc. Methods and apparatuses for heating semiconductor wafers
KR101553802B1 (ko) 2009-02-22 2015-09-17 마퍼 리쏘그라피 아이피 비.브이. 진공 챔버에서 진공을 실현하기 위한 장치 및 방법
GB2469112A (en) 2009-04-03 2010-10-06 Mapper Lithography Ip Bv Wafer support using controlled capillary liquid layer to hold and release wafer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6063375A (ja) 1983-09-14 1985-04-11 Canon Inc 気相法堆積膜製造装置
JPS6063374A (ja) 1983-09-14 1985-04-11 Canon Inc 気相法堆積膜製造装置
US5013385A (en) * 1986-04-18 1991-05-07 General Signal Corporation Quad processor
US4725204A (en) 1986-11-05 1988-02-16 Pennwalt Corporation Vacuum manifold pumping system
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
JPH02129100A (ja) 1988-11-10 1990-05-17 Toshiba Corp 半導体熱処理装置
US5174827A (en) 1989-07-26 1992-12-29 Consorzio Ce.Te.V Centro Tecnologie Del Vuoto Double chamber vacuum apparatus for thin layer deposition
IT1231664B (it) 1989-07-26 1991-12-18 Consorzio Ce Te V Impianto da vuoto a doppia camera per processi di deposizione di strati sottili
JPH03135022A (ja) 1989-10-20 1991-06-10 Tokyo Electron Ltd 基板の処理装置
JPH0831420B2 (ja) 1992-03-30 1996-03-27 株式会社半導体エネルギー研究所 被膜作製装置

Also Published As

Publication number Publication date
FI95421C (fi) 1996-01-25
US6174366B1 (en) 2001-01-16
WO1995018459A1 (en) 1995-07-06
FI95421B (fi) 1995-10-13
FI935854A (fi) 1995-06-24
EP0736223A1 (en) 1996-10-09

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