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FI20115534A0 - Method and structure for protecting the passivating layer - Google Patents

Method and structure for protecting the passivating layer

Info

Publication number
FI20115534A0
FI20115534A0 FI20115534A FI20115534A FI20115534A0 FI 20115534 A0 FI20115534 A0 FI 20115534A0 FI 20115534 A FI20115534 A FI 20115534A FI 20115534 A FI20115534 A FI 20115534A FI 20115534 A0 FI20115534 A0 FI 20115534A0
Authority
FI
Finland
Prior art keywords
protecting
passivating layer
passivating
layer
Prior art date
Application number
FI20115534A
Other languages
Finnish (fi)
Swedish (sv)
Inventor
Jarmo Skarp
Arto Pakkala
Sampo Ahonen
Sami Sneck
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20115534A priority Critical patent/FI20115534A0/en
Publication of FI20115534A0 publication Critical patent/FI20115534A0/en
Priority to PCT/FI2012/050514 priority patent/WO2012164163A1/en
Priority to TW101119282A priority patent/TW201308633A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
FI20115534A 2011-05-30 2011-05-30 Method and structure for protecting the passivating layer FI20115534A0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FI20115534A FI20115534A0 (en) 2011-05-30 2011-05-30 Method and structure for protecting the passivating layer
PCT/FI2012/050514 WO2012164163A1 (en) 2011-05-30 2012-05-28 A method and a structure for protecting a passivating layer
TW101119282A TW201308633A (en) 2011-05-30 2012-05-30 Method and structure for protecting passivation layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20115534A FI20115534A0 (en) 2011-05-30 2011-05-30 Method and structure for protecting the passivating layer

Publications (1)

Publication Number Publication Date
FI20115534A0 true FI20115534A0 (en) 2011-05-30

Family

ID=44071658

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20115534A FI20115534A0 (en) 2011-05-30 2011-05-30 Method and structure for protecting the passivating layer

Country Status (3)

Country Link
FI (1) FI20115534A0 (en)
TW (1) TW201308633A (en)
WO (1) WO2012164163A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014014108A1 (en) * 2012-07-19 2014-01-23 日立化成株式会社 Passivation-layer-forming composition, semiconductor substrate having passivation layer, method for manufacturing semiconductor substrate having passivation layer, solar-cell element, method for manufacturing solar-cell element, and solar cell
TW201511300A (en) * 2013-09-11 2015-03-16 Inst Nuclear Energy Res Atomic Energy Council Method for preparing aluminum metal electrode with doped yttrium or boron atom
CN109148643B (en) * 2018-08-06 2021-02-09 横店集团东磁股份有限公司 A method to solve the efficiency reduction of ALD-based PERC cells after electrical injection or optical injection
CN110047950A (en) * 2019-05-22 2019-07-23 通威太阳能（安徽）有限公司 A kind of solar cell and preparation method thereof with passivation layer structure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6420279B1 (en) * 2001-06-28 2002-07-16 Sharp Laboratories Of America, Inc. Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate
US7507629B2 (en) * 2004-09-10 2009-03-24 Gerald Lucovsky Semiconductor devices having an interfacial dielectric layer and related methods
DE102007054384A1 (en) * 2007-11-14 2009-05-20 Institut Für Solarenergieforschung Gmbh Method for producing a solar cell with a surface-passivating dielectric double layer and corresponding solar cell
US20110083735A1 (en) * 2009-10-13 2011-04-14 Ips Ltd. Solar cell and method of fabricating the same

Also Published As

Publication number Publication date
WO2012164163A1 (en) 2012-12-06
TW201308633A (en) 2013-02-16

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Legal Events

Date Code Title Description
FD Application lapsed