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FI20105903A0 - Laite - Google Patents

Laite

Info

Publication number
FI20105903A0
FI20105903A0 FI20105903A FI20105903A FI20105903A0 FI 20105903 A0 FI20105903 A0 FI 20105903A0 FI 20105903 A FI20105903 A FI 20105903A FI 20105903 A FI20105903 A FI 20105903A FI 20105903 A0 FI20105903 A0 FI 20105903A0
Authority
FI
Finland
Application number
FI20105903A
Other languages
English (en)
Swedish (sv)
Inventor
Tapani Alasaarela
Pekka Soininen
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20105903A priority Critical patent/FI20105903A0/fi
Publication of FI20105903A0 publication Critical patent/FI20105903A0/fi
Priority to PCT/FI2011/050732 priority patent/WO2012028771A1/en
Priority to CN201180041749.5A priority patent/CN103237921B/zh
Priority to DE112011102853T priority patent/DE112011102853T5/de
Priority to US13/817,082 priority patent/US9909212B2/en
Priority to TW100130645A priority patent/TWI527627B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
FI20105903A 2010-08-30 2010-08-30 Laite FI20105903A0 (fi)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FI20105903A FI20105903A0 (fi) 2010-08-30 2010-08-30 Laite
PCT/FI2011/050732 WO2012028771A1 (en) 2010-08-30 2011-08-22 Apparatus
CN201180041749.5A CN103237921B (zh) 2010-08-30 2011-08-22 一种装置
DE112011102853T DE112011102853T5 (de) 2010-08-30 2011-08-22 Anordnung
US13/817,082 US9909212B2 (en) 2010-08-30 2011-08-22 Apparatus for processing substrate surface
TW100130645A TWI527627B (zh) 2010-08-30 2011-08-26 表面處理裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20105903A FI20105903A0 (fi) 2010-08-30 2010-08-30 Laite

Publications (1)

Publication Number Publication Date
FI20105903A0 true FI20105903A0 (fi) 2010-08-30

Family

ID=42669407

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20105903A FI20105903A0 (fi) 2010-08-30 2010-08-30 Laite

Country Status (6)

Country Link
US (1) US9909212B2 (fi)
CN (1) CN103237921B (fi)
DE (1) DE112011102853T5 (fi)
FI (1) FI20105903A0 (fi)
TW (1) TWI527627B (fi)
WO (1) WO2012028771A1 (fi)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2600047C2 (ru) * 2012-03-23 2016-10-20 Пикосан Ой Способ и устройство для осаждения атомных слоев
FI124298B (fi) * 2012-06-25 2014-06-13 Beneq Oy Laite substraatin pinnan käsittelemiseksi ja suutinpää
FI125341B (fi) * 2012-07-09 2015-08-31 Beneq Oy Laitteisto ja menetelmä substraatin käsittelemiseksi
US10879099B2 (en) * 2018-08-15 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Humidity control in storage device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55120142A (en) * 1979-03-10 1980-09-16 Pioneer Electronic Corp Cvd device
US4928625A (en) * 1989-09-25 1990-05-29 Spirotron Corporation Pendulum mounted airbrush
JP3235550B2 (ja) * 1997-11-28 2001-12-04 日新電機株式会社 揺動駆動装置
JP3858437B2 (ja) * 1998-04-13 2006-12-13 ソニー株式会社 真空薄膜形成装置
TWI277140B (en) 2002-07-12 2007-03-21 Asm Int Method and apparatus for the pulse-wise supply of a vaporized liquid reactant
US20050172897A1 (en) 2004-02-09 2005-08-11 Frank Jansen Barrier layer process and arrangement
US7699932B2 (en) * 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US20070281106A1 (en) * 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US20100148517A1 (en) * 2006-07-19 2010-06-17 Paul Duclos Pendulum mechanism and power generation system using same
US11136667B2 (en) * 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
JP5092624B2 (ja) 2007-08-24 2012-12-05 大日本印刷株式会社 ガスバリア膜の作製方法及び作製装置
JP5663305B2 (ja) 2007-09-07 2015-02-04 フジフィルム マニュファクチュアリング ヨーロッパ ビー．ヴィ． 大気圧グロー放電プラズマを用いる原子層堆積の方法及び装置
US7572686B2 (en) * 2007-09-26 2009-08-11 Eastman Kodak Company System for thin film deposition utilizing compensating forces
WO2009057464A1 (ja) * 2007-11-01 2009-05-07 Konica Minolta Holdings, Inc. 塗布方法及び塗布装置
EP2159304A1 (en) * 2008-08-27 2010-03-03 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Apparatus and method for atomic layer deposition
JP5201490B2 (ja) * 2008-12-24 2013-06-05 富士電機株式会社 可撓性基板の処理装置および薄膜積層体の製造装置
KR101435100B1 (ko) 2012-06-20 2014-08-29 주식회사 엠티에스나노테크 원자층 증착 장치

Also Published As

Publication number Publication date
CN103237921B (zh) 2015-06-03
CN103237921A (zh) 2013-08-07
US20130199446A1 (en) 2013-08-08
US9909212B2 (en) 2018-03-06
WO2012028771A1 (en) 2012-03-08
TW201210698A (en) 2012-03-16
TWI527627B (zh) 2016-04-01
DE112011102853T5 (de) 2013-08-08

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Legal Events

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