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FI20070939A - Säteilyanturi menetelmä säteilyanturin valmistamiseksi ja anturin käyttö säteilyn mittaamiseksi - Google Patents

Säteilyanturi menetelmä säteilyanturin valmistamiseksi ja anturin käyttö säteilyn mittaamiseksi Download PDF

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Publication number
FI20070939A
FI20070939A FI20070939A FI20070939A FI20070939A FI 20070939 A FI20070939 A FI 20070939A FI 20070939 A FI20070939 A FI 20070939A FI 20070939 A FI20070939 A FI 20070939A FI 20070939 A FI20070939 A FI 20070939A
Authority
FI
Finland
Prior art keywords
detector
radiation
producing
measuring
radiation detector
Prior art date
Application number
FI20070939A
Other languages
English (en)
Swedish (sv)
Other versions
FI20070939A0 (fi
FI121828B (fi
Inventor
Francisco Garcia
Risto Orava
Manuel Lozano
Giulio Pellegrini
Original Assignee
Teknoflow Oy
Consejo Superior Investigacion
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teknoflow Oy, Consejo Superior Investigacion filed Critical Teknoflow Oy
Priority to FI20070939A priority Critical patent/FI121828B/fi
Publication of FI20070939A0 publication Critical patent/FI20070939A0/fi
Priority to EP08858023A priority patent/EP2227828A2/en
Priority to EP16162571.0A priority patent/EP3139409A1/en
Priority to PCT/EP2008/066716 priority patent/WO2009071587A2/en
Publication of FI20070939A publication Critical patent/FI20070939A/fi
Priority to US12/794,627 priority patent/US8461541B2/en
Application granted granted Critical
Publication of FI121828B publication Critical patent/FI121828B/fi

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T3/00—Measuring neutron radiation
    • G01T3/08—Measuring neutron radiation with semiconductor detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H10F77/1468—Doped superlattices, e.g. N-I-P-I superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
FI20070939A 2007-12-04 2007-12-04 Säteilynilmaisin, menetelmä säteilynilmaisimen valmistamiseksi ja ilmaisimen käyttö säteilyn mittaamiseen FI121828B (fi)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FI20070939A FI121828B (fi) 2007-12-04 2007-12-04 Säteilynilmaisin, menetelmä säteilynilmaisimen valmistamiseksi ja ilmaisimen käyttö säteilyn mittaamiseen
EP08858023A EP2227828A2 (en) 2007-12-04 2008-12-03 Back-thinned radiation detector with "3d" active region and corresponding methods of manufacturing and use
EP16162571.0A EP3139409A1 (en) 2007-12-04 2008-12-03 Radiation detector, method of manufacturing a radiation detector and use of the detector for measuring radiation
PCT/EP2008/066716 WO2009071587A2 (en) 2007-12-04 2008-12-03 Back-thinned radiation detector with '3d' active region and corresponding methods of manufacturing and use
US12/794,627 US8461541B2 (en) 2007-12-04 2010-06-04 Radiation detector, method of manufacturing a radiation detector and use of the detector for measuring radiation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20070939A FI121828B (fi) 2007-12-04 2007-12-04 Säteilynilmaisin, menetelmä säteilynilmaisimen valmistamiseksi ja ilmaisimen käyttö säteilyn mittaamiseen
FI20070939 2007-12-04

Publications (3)

Publication Number Publication Date
FI20070939A0 FI20070939A0 (fi) 2007-12-04
FI20070939A true FI20070939A (fi) 2009-06-05
FI121828B FI121828B (fi) 2011-04-29

Family

ID=38951476

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20070939A FI121828B (fi) 2007-12-04 2007-12-04 Säteilynilmaisin, menetelmä säteilynilmaisimen valmistamiseksi ja ilmaisimen käyttö säteilyn mittaamiseen

Country Status (4)

Country Link
US (1) US8461541B2 (fi)
EP (2) EP2227828A2 (fi)
FI (1) FI121828B (fi)
WO (1) WO2009071587A2 (fi)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8519503B2 (en) 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US8120023B2 (en) 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
US7709921B2 (en) 2008-08-27 2010-05-04 Udt Sensors, Inc. Photodiode and photodiode array with improved performance characteristics
US7576369B2 (en) * 2005-10-25 2009-08-18 Udt Sensors, Inc. Deep diffused thin photodiodes
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US8005326B2 (en) * 2008-07-10 2011-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Optical clock signal distribution using through-silicon vias
MX2011002852A (es) 2008-09-15 2011-08-17 Udt Sensors Inc Fotodiodo de espina de capa activa delgada con una capa n+ superficial y metodo para fabricacion del mismo.
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
EP2256810A1 (en) * 2009-05-29 2010-12-01 Fondazione Bruno Kessler Method for the production of a 3D solid-state radiation detector
US8263940B2 (en) 2009-10-26 2012-09-11 Finphys Oy Neutron detector with neutron converter, method for manufacturing the neutron detector and neutron imaging apparatus
GB2474720A (en) 2009-10-26 2011-04-27 Finphys Oy Neutron Detector
CN102859706B (zh) * 2010-01-08 2016-10-26 Tri阿尔法能源公司 高能光子向电力的转换
TWI557887B (zh) 2010-03-19 2016-11-11 量宏科技股份有限公司 影像感測器及用來讀取影像感測器之方法
US8916947B2 (en) 2010-06-08 2014-12-23 Invisage Technologies, Inc. Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode
GB201107076D0 (en) 2011-04-27 2011-06-08 Finphys Oy Neutron detector
US8798229B2 (en) * 2011-09-30 2014-08-05 General Electric Company Detector modules and methods of manufacturing
EP2817818B1 (en) * 2012-02-15 2017-05-31 HS Foils OY Method and arrangement for manufacturing a radiation window
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
US10054691B1 (en) 2013-03-01 2018-08-21 The United States of America as Represented by the Admin of National Aeronautics and Space Administration Fast, large area, wide band GAP UV photodetector for cherenkov light detection
US10078142B2 (en) 2014-03-26 2018-09-18 California Institute Of Technology Sensor integrated metal dielectric filters for solar-blind silicon ultraviolet detectors
US9739898B2 (en) 2014-03-26 2017-08-22 California Institute Of Technology Subnanosecond scintillation detector
WO2015191734A1 (en) 2014-06-10 2015-12-17 Edward Hartley Sargent Multi-terminal optoelectronic devices for light detection
US9754992B2 (en) 2015-01-21 2017-09-05 Terapede Systems Inc. Integrated scintillator grid with photodiodes
WO2017195024A2 (en) * 2016-05-11 2017-11-16 G-Ray Industries S.A. Monolithic silicon pixel detector, and systems and methods for particle detection
WO2017213622A1 (en) * 2016-06-06 2017-12-14 Terapede Systems Inc. Integrated scintillator grid with photodiodes
CN109863603B (zh) * 2016-10-20 2023-02-17 因维萨热技术公司 具有电子收集电极和空穴收集电极的图像传感器
GB201703785D0 (en) * 2017-03-09 2017-04-26 Univ Bristol Radiation detector
US10126437B1 (en) * 2017-05-15 2018-11-13 Prismatic Sensors Ab Detector for x-ray imaging
EP3658959A4 (en) * 2017-07-26 2020-12-23 Shenzhen Xpectvision Technology Co., Ltd. RADIATION DETECTOR WITH INTEGRATED DEPOLARIZATION DEVICE
EP3444843B8 (en) * 2017-08-14 2021-03-24 ams International AG Assembly for detecting electromagnetic radiation and method of producing an assembly for detecting electromagnetic radiation
KR102583562B1 (ko) * 2017-12-27 2023-09-26 엘지디스플레이 주식회사 디지털 엑스레이 검출기용 어레이 기판과 이를 포함하는 엑스레이 검출기
EP3908855A4 (en) * 2019-01-10 2022-07-06 Shenzhen Xpectvision Technology Co., Ltd. SEMICONDUCTOR RADIATION DETECTOR
CN112083470B (zh) * 2020-09-02 2023-11-24 重庆中易智芯科技有限责任公司 一种阻态敏感CdZnTe辐射探测器及其制造方法
US11927616B2 (en) 2021-03-30 2024-03-12 International Business Machines Corporation Evaluation of wafer carcass alpha particle emission
CN114397691B (zh) * 2022-01-13 2025-01-03 中国科学院合肥物质科学研究院 一种用于聚变中子发生器伴随粒子成像的高计数率α粒子探测方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56129380A (en) * 1980-03-13 1981-10-09 Fuji Electric Co Ltd Semiconductor radioactive rays detector
FR2656738B1 (fr) * 1989-12-29 1995-03-17 Telemecanique Procede pour fabriquer un dispositif semiconducteur, dispositif et composant semiconducteur obtenus par le procede.
FR2666453A1 (fr) * 1990-08-31 1992-03-06 Commissariat Energie Atomique Batterie de photopiles montees en serie.
FR2715250B1 (fr) 1994-01-19 1996-04-05 Commissariat Energie Atomique Dispositif tridimensionnel de détection de rayonnement et procédé de fabrication de ce dispositif.
US6259099B1 (en) * 1996-12-18 2001-07-10 Commissariat A L'energie Atomique Ultra-thin ionizing radiation detector and methods for making same
DE10127952A1 (de) * 2001-06-08 2002-12-19 Infineon Technologies Ag Laterale PIN-Diode und Verfahren zur Herstellung derselben
US6667528B2 (en) * 2002-01-03 2003-12-23 International Business Machines Corporation Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same
US20050017185A1 (en) * 2003-07-01 2005-01-27 King Douglas Beverley Stevenson Radiation detector
US6943409B1 (en) * 2004-05-24 2005-09-13 International Business Machines Corporation Trench optical device
EP1833095B1 (en) * 2006-03-06 2018-08-01 ams AG Photo diode having reduced dark current

Also Published As

Publication number Publication date
EP2227828A2 (en) 2010-09-15
US8461541B2 (en) 2013-06-11
WO2009071587A3 (en) 2009-09-17
FI20070939A0 (fi) 2007-12-04
WO2009071587A2 (en) 2009-06-11
FI121828B (fi) 2011-04-29
EP3139409A1 (en) 2017-03-08
US20110079728A1 (en) 2011-04-07

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