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FI20041479A0 - Modified semiconductor operation detector - Google Patents

Modified semiconductor operation detector

Info

Publication number
FI20041479A0
FI20041479A0 FI20041479A FI20041479A FI20041479A0 FI 20041479 A0 FI20041479 A0 FI 20041479A0 FI 20041479 A FI20041479 A FI 20041479A FI 20041479 A FI20041479 A FI 20041479A FI 20041479 A0 FI20041479 A0 FI 20041479A0
Authority
FI
Finland
Prior art keywords
operation detector
modified semiconductor
semiconductor operation
modified
detector
Prior art date
Application number
FI20041479A
Other languages
Finnish (fi)
Swedish (sv)
Other versions
FI20041479L (en
FI20041479A7 (en
Inventor
Artto Aurola
Original Assignee
Artto Aurola
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Artto Aurola filed Critical Artto Aurola
Priority to FI20041479A priority Critical patent/FI20041479A7/en
Publication of FI20041479A0 publication Critical patent/FI20041479A0/en
Priority to EP05774699A priority patent/EP1790011A4/en
Priority to EP14197959.1A priority patent/EP2950346A3/en
Priority to PCT/FI2005/000359 priority patent/WO2006018477A1/en
Priority to CA2577198A priority patent/CA2577198C/en
Priority to KR1020077003995A priority patent/KR101143346B1/en
Priority to RU2007104786/28A priority patent/RU2376678C2/en
Priority to JP2007526477A priority patent/JP5081621B2/en
Priority to AU2005273818A priority patent/AU2005273818B2/en
Priority to MX2007002133A priority patent/MX2007002133A/en
Priority to US11/660,562 priority patent/US7816653B2/en
Priority to BRPI0514449-3A priority patent/BRPI0514449B1/en
Priority to PCT/FI2005/000488 priority patent/WO2006053938A1/en
Publication of FI20041479L publication Critical patent/FI20041479L/en
Publication of FI20041479A7 publication Critical patent/FI20041479A7/en
Priority to IL181187A priority patent/IL181187A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
FI20041479A 2004-08-20 2004-11-17 Modified semiconductor drift detector FI20041479A7 (en)

Priority Applications (14)

Application Number Priority Date Filing Date Title
FI20041479A FI20041479A7 (en) 2004-11-17 2004-11-17 Modified semiconductor drift detector
BRPI0514449-3A BRPI0514449B1 (en) 2004-08-20 2005-08-22 RADIATION SEMICONDUCTOR DETECTOR WITH MODIFIED INTERNAL DOOR STRUCTURE
RU2007104786/28A RU2376678C2 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with modified internal gate structure
AU2005273818A AU2005273818B2 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
PCT/FI2005/000359 WO2006018477A1 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
CA2577198A CA2577198C (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
KR1020077003995A KR101143346B1 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
EP05774699A EP1790011A4 (en) 2004-08-20 2005-08-22 SEMICONDUCTOR RADIATION DETECTOR WITH MODIFIED INTERNAL GRID STRUCTURE
JP2007526477A JP5081621B2 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector using a modified internal gate structure.
EP14197959.1A EP2950346A3 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
MX2007002133A MX2007002133A (en) 2004-08-20 2005-08-22 SEMICONDUCTOR RADIATION DETECTOR WITH A MODIFIED INTERNAL GATE STRUCTURE.
US11/660,562 US7816653B2 (en) 2004-08-20 2005-08-22 Semiconductor radiation detector with a modified internal gate structure
PCT/FI2005/000488 WO2006053938A1 (en) 2004-11-17 2005-11-16 Modified semiconductor drift detector
IL181187A IL181187A (en) 2004-08-20 2007-02-06 Semiconductor radiation detector with a modified internal gate structure and method for detecting the radiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20041479A FI20041479A7 (en) 2004-11-17 2004-11-17 Modified semiconductor drift detector

Publications (3)

Publication Number Publication Date
FI20041479A0 true FI20041479A0 (en) 2004-11-17
FI20041479L FI20041479L (en) 2006-05-05
FI20041479A7 FI20041479A7 (en) 2006-05-05

Family

ID=33515238

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20041479A FI20041479A7 (en) 2004-08-20 2004-11-17 Modified semiconductor drift detector

Country Status (3)

Country Link
BR (1) BRPI0514449B1 (en)
FI (1) FI20041479A7 (en)
WO (1) WO2006053938A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2446429A (en) 2006-12-08 2008-08-13 E2V Tech Photosensor with variable sensing area
CN104620387B (en) * 2012-08-23 2018-10-26 皇家飞利浦有限公司 Photon counting semiconductor detector
US9123837B2 (en) 2013-05-31 2015-09-01 Oxford Instruments Analytical Oy Semiconductor detector with radiation shield
US20200355837A1 (en) * 2017-12-15 2020-11-12 Horiba, Ltd. Silicon drift detection element, silicon drift detector, and radiation detection device
CN111373287B (en) * 2017-12-15 2025-01-14 株式会社堀场制作所 Radiation detector and radiation detection device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8900343A (en) * 1989-02-13 1990-09-03 Univ Delft Tech PLACE SENSITIVE RADIATION DETECTOR.
DE10213812B4 (en) * 2002-03-27 2007-03-29 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Cable transfer for a semiconductor detector
DE10260229B3 (en) * 2002-12-20 2005-08-18 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Semiconductor detector with optimized radiation entrance window

Also Published As

Publication number Publication date
BRPI0514449A (en) 2008-06-10
BRPI0514449B1 (en) 2017-11-14
WO2006053938A1 (en) 2006-05-26
FI20041479L (en) 2006-05-05
FI20041479A7 (en) 2006-05-05

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Legal Events

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