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FI20040966L - Pinta-akkumulaatiorakenne säteilydetektoria varten - Google Patents

Pinta-akkumulaatiorakenne säteilydetektoria varten Download PDF

Info

Publication number
FI20040966L
FI20040966L FI20040966A FI20040966A FI20040966L FI 20040966 L FI20040966 L FI 20040966L FI 20040966 A FI20040966 A FI 20040966A FI 20040966 A FI20040966 A FI 20040966A FI 20040966 L FI20040966 L FI 20040966L
Authority
FI
Finland
Prior art keywords
substrate
work function
layer
electron affinity
radiation detector
Prior art date
Application number
FI20040966A
Other languages
English (en)
Swedish (sv)
Other versions
FI20040966A7 (fi
FI20040966A0 (fi
Inventor
Artto Aurola
Original Assignee
Artto Aurola
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Artto Aurola filed Critical Artto Aurola
Priority to FI20040966A priority Critical patent/FI20040966L/fi
Publication of FI20040966A0 publication Critical patent/FI20040966A0/fi
Priority to PCT/FI2005/050242 priority patent/WO2006005803A1/en
Publication of FI20040966A7 publication Critical patent/FI20040966A7/fi
Publication of FI20040966L publication Critical patent/FI20040966L/fi

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FI20040966A 2004-07-09 2004-07-09 Pinta-akkumulaatiorakenne säteilydetektoria varten FI20040966L (fi)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FI20040966A FI20040966L (fi) 2004-07-09 2004-07-09 Pinta-akkumulaatiorakenne säteilydetektoria varten
PCT/FI2005/050242 WO2006005803A1 (en) 2004-07-09 2005-06-28 Semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20040966A FI20040966L (fi) 2004-07-09 2004-07-09 Pinta-akkumulaatiorakenne säteilydetektoria varten

Publications (3)

Publication Number Publication Date
FI20040966A0 FI20040966A0 (fi) 2004-07-09
FI20040966A7 FI20040966A7 (fi) 2006-01-10
FI20040966L true FI20040966L (fi) 2006-01-10

Family

ID=32749186

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20040966A FI20040966L (fi) 2004-07-09 2004-07-09 Pinta-akkumulaatiorakenne säteilydetektoria varten

Country Status (2)

Country Link
FI (1) FI20040966L (fi)
WO (1) WO2006005803A1 (fi)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2950346A2 (en) 2004-08-20 2015-12-02 Artto Aurola Semiconductor radiation detector with a modified internal gate structure

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI20051236A0 (fi) * 2005-12-01 2005-12-01 Artto Mikael Aurola Puolijohde apparaatti
DE102007055676A1 (de) * 2007-11-21 2009-06-04 Siemens Ag Strahlungswandler, Strahlungsdetektor und Strahlungserfassungseinrichtung
FR2972295B1 (fr) * 2011-03-04 2013-07-19 Soc Fr Detecteurs Infrarouges Sofradir Matrice de detection a conditions de polarisation ameliorees et procede de fabrication
US8669630B2 (en) 2011-03-04 2014-03-11 Societe Francaise de Detecteurs Infrarouges—Sofradir Detection matrix with improved biasing conditions and fabrication method
FR2972296B1 (fr) * 2011-03-04 2013-11-15 Soc Fr Detecteurs Infrarouges Sofradir Matrice de detection a conditions de polarisation ameliorees et procede de fabrication
US9224768B2 (en) * 2013-08-05 2015-12-29 Raytheon Company Pin diode structure having surface charge suppression
WO2019123591A1 (ja) * 2017-12-21 2019-06-27 オリンパス株式会社 半導体装置
CN115498063A (zh) * 2022-07-25 2022-12-20 核芯光电科技(山东)有限公司 一种基于栅极结构的Si-PIN探测装置及其制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1532859A (en) * 1976-03-30 1978-11-22 Mullard Ltd Charge coupled circuit arrangements and devices
US5808329A (en) * 1996-07-15 1998-09-15 Raytheon Company Low light level imager with extended wavelength response employing atomic bonded (fused) semiconductor materials
US6259085B1 (en) * 1996-11-01 2001-07-10 The Regents Of The University Of California Fully depleted back illuminated CCD
US6204087B1 (en) * 1997-02-07 2001-03-20 University Of Hawai'i Fabrication of three-dimensional architecture for solid state radiation detectors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2950346A2 (en) 2004-08-20 2015-12-02 Artto Aurola Semiconductor radiation detector with a modified internal gate structure

Also Published As

Publication number Publication date
WO2006005803A1 (en) 2006-01-19
FI20040966A7 (fi) 2006-01-10
FI20040966A0 (fi) 2004-07-09

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