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ES8302362A1 - METHOD FOR PREPARING A BETTER PHOTOSENSITIVE AMORPHOUS ALLOY - Google Patents

METHOD FOR PREPARING A BETTER PHOTOSENSITIVE AMORPHOUS ALLOY

Info

Publication number
ES8302362A1
ES8302362A1 ES505269A ES505269A ES8302362A1 ES 8302362 A1 ES8302362 A1 ES 8302362A1 ES 505269 A ES505269 A ES 505269A ES 505269 A ES505269 A ES 505269A ES 8302362 A1 ES8302362 A1 ES 8302362A1
Authority
ES
Spain
Prior art keywords
preparing
amorphous alloy
photosensitive amorphous
better photosensitive
better
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES505269A
Other languages
Spanish (es)
Other versions
ES505269A0 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/185,520 external-priority patent/US4342044A/en
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES8302362A1 publication Critical patent/ES8302362A1/en
Publication of ES505269A0 publication Critical patent/ES505269A0/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/402—Amorphous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/13—Photovoltaic cells having absorbing layers comprising graded bandgaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A semiconductor material comprises amorphous Si containing F (a- Si: F) together with a band gap increasing modifier (e.g. C or N). H may also be incorporated in the material which may be doped. The material may be used in Schottky, MIS and PIN solar cells or in photoconductive or electrophotographic devices.
ES505269A 1980-09-09 1981-09-07 METHOD FOR PREPARING A BETTER PHOTOSENSITIVE AMORPHOUS ALLOY Granted ES505269A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/185,520 US4342044A (en) 1978-03-08 1980-09-09 Method for optimizing photoresponsive amorphous alloys and devices
US20647680A 1980-11-13 1980-11-13

Publications (2)

Publication Number Publication Date
ES8302362A1 true ES8302362A1 (en) 1982-12-16
ES505269A0 ES505269A0 (en) 1982-12-16

Family

ID=26881209

Family Applications (1)

Application Number Title Priority Date Filing Date
ES505269A Granted ES505269A0 (en) 1980-09-09 1981-09-07 METHOD FOR PREPARING A BETTER PHOTOSENSITIVE AMORPHOUS ALLOY

Country Status (14)

Country Link
KR (1) KR890000479B1 (en)
AU (1) AU541939B2 (en)
BR (1) BR8105746A (en)
CA (1) CA1192817A (en)
DE (1) DE3135412C2 (en)
ES (1) ES505269A0 (en)
FR (1) FR2490019B1 (en)
GB (1) GB2083704B (en)
IE (1) IE52208B1 (en)
IL (1) IL63755A (en)
IN (1) IN157494B (en)
IT (1) IT1138204B (en)
NL (1) NL8104139A (en)
SE (1) SE8105278L (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
SE451353B (en) * 1980-09-09 1987-09-28 Energy Conversion Devices Inc PHOTO-SENSITIVE, AMORFT MULTI CELLS
SE455554B (en) * 1980-09-09 1988-07-18 Energy Conversion Devices Inc FOTOSPENNINGSDON
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
JPS59111152A (en) * 1982-12-16 1984-06-27 Sharp Corp Photosensitive body for electrophotography
GB2137810B (en) * 1983-03-08 1986-10-22 Agency Ind Science Techn A solar cell of amorphous silicon
US4572882A (en) * 1983-09-09 1986-02-25 Canon Kabushiki Kaisha Photoconductive member containing amorphous silicon and germanium
EP0151754B1 (en) * 1984-02-14 1991-12-18 Energy Conversion Devices, Inc. An improved method of making a photoconductive member
JPH0624238B2 (en) * 1985-04-16 1994-03-30 キヤノン株式会社 Photosensor array manufacturing method
CA1321660C (en) * 1985-11-05 1993-08-24 Hideo Yamagishi Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer
US4887134A (en) * 1986-09-26 1989-12-12 Canon Kabushiki Kaisha Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded
JP3099957B2 (en) * 1990-01-17 2000-10-16 株式会社リコー Photoconductive member
US5155567A (en) * 1990-01-17 1992-10-13 Ricoh Company, Ltd. Amorphous photoconductive material and photosensor employing the photoconductive material
DE19524459A1 (en) * 1995-07-07 1997-01-09 Forschungszentrum Juelich Gmbh Solar cell, esp. concentrator solar cell - having crystalline silicon@ layer and adjacent amorphous silicon-contg. layer with means for reducing potential barrier in vicinity of amorphous layer boundary face
JP3119131B2 (en) * 1995-08-01 2000-12-18 トヨタ自動車株式会社 Method for producing silicon thin film and method for producing solar cell using this method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material
GB2038086A (en) * 1978-12-19 1980-07-16 Standard Telephones Cables Ltd Amorphous semiconductor devices

Also Published As

Publication number Publication date
AU7502081A (en) 1982-03-18
KR830008407A (en) 1983-11-18
IE812064L (en) 1982-03-09
IN157494B (en) 1986-04-12
GB2083704B (en) 1985-08-21
IL63755A (en) 1984-07-31
FR2490019B1 (en) 1985-10-31
SE8105278L (en) 1982-03-10
AU541939B2 (en) 1985-01-31
IT8123828A0 (en) 1981-09-07
BR8105746A (en) 1982-05-25
IE52208B1 (en) 1987-08-05
NL8104139A (en) 1982-04-01
GB2083704A (en) 1982-03-24
FR2490019A1 (en) 1982-03-12
DE3135412A1 (en) 1982-08-12
CA1192817A (en) 1985-09-03
IT1138204B (en) 1986-09-17
KR890000479B1 (en) 1989-03-18
IL63755A0 (en) 1981-12-31
ES505269A0 (en) 1982-12-16
DE3135412C2 (en) 1985-11-21

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