[go: up one dir, main page]

ES521708A0 - IMPROVEMENTS IN A SEMI-CONDUCTIVE STRUCTURE OF INTEGRATED CIRCUIT. - Google Patents

IMPROVEMENTS IN A SEMI-CONDUCTIVE STRUCTURE OF INTEGRATED CIRCUIT.

Info

Publication number
ES521708A0
ES521708A0 ES521708A ES521708A ES521708A0 ES 521708 A0 ES521708 A0 ES 521708A0 ES 521708 A ES521708 A ES 521708A ES 521708 A ES521708 A ES 521708A ES 521708 A0 ES521708 A0 ES 521708A0
Authority
ES
Spain
Prior art keywords
semi
integrated circuit
conductive structure
conductive
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES521708A
Other languages
Spanish (es)
Other versions
ES8403666A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES8403666A1 publication Critical patent/ES8403666A1/en
Publication of ES521708A0 publication Critical patent/ES521708A0/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
ES521708A 1982-04-23 1983-04-21 IMPROVEMENTS IN A SEMI-CONDUCTIVE STRUCTURE OF INTEGRATED CIRCUIT. Granted ES521708A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US37105582A 1982-04-23 1982-04-23

Publications (2)

Publication Number Publication Date
ES8403666A1 ES8403666A1 (en) 1984-04-01
ES521708A0 true ES521708A0 (en) 1984-04-01

Family

ID=23462292

Family Applications (1)

Application Number Title Priority Date Filing Date
ES521708A Granted ES521708A0 (en) 1982-04-23 1983-04-21 IMPROVEMENTS IN A SEMI-CONDUCTIVE STRUCTURE OF INTEGRATED CIRCUIT.

Country Status (5)

Country Link
EP (1) EP0105915A1 (en)
ES (1) ES521708A0 (en)
GB (1) GB2118777A (en)
IT (1) IT1170132B (en)
WO (1) WO1983003923A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198847A (en) * 1984-03-23 1985-10-08 Nec Corp Semiconductor device and manufacture thereof
FR2583220B1 (en) * 1985-06-11 1987-08-07 Thomson Csf PROCESS FOR PRODUCING AT LEAST TWO METALLIZATIONS OF A SEMICONDUCTOR COMPONENT COVERED WITH A DIELECTRIC LAYER AND COMPONENT OBTAINED BY THIS DIELECTRIC
US4654269A (en) * 1985-06-21 1987-03-31 Fairchild Camera & Instrument Corp. Stress relieved intermediate insulating layer for multilayer metalization
JPH088265B2 (en) * 1988-09-13 1996-01-29 株式会社東芝 Compound semiconductor device and manufacturing method thereof
US5424570A (en) * 1992-01-31 1995-06-13 Sgs-Thomson Microelectronics, Inc. Contact structure for improving photoresist adhesion on a dielectric layer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3882530A (en) * 1971-12-09 1975-05-06 Us Government Radiation hardening of mos devices by boron
US4005455A (en) * 1974-08-21 1977-01-25 Intel Corporation Corrosive resistant semiconductor interconnect pad
JPS5171068A (en) * 1974-12-16 1976-06-19 Matsushita Electronics Corp HANDOTA ISOCHI
JPS54147789A (en) * 1978-05-11 1979-11-19 Matsushita Electric Ind Co Ltd Semiconductor divice and its manufacture
JPS6046546B2 (en) * 1980-06-16 1985-10-16 日本電気株式会社 Manufacturing method of semiconductor device
JPS577153A (en) * 1980-06-16 1982-01-14 Nec Corp Preparation of semiconductor device
JPS5727047A (en) * 1980-07-25 1982-02-13 Seiko Epson Corp Semiconductor device
JPS57113235A (en) * 1980-12-29 1982-07-14 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
IT1170132B (en) 1987-06-03
EP0105915A1 (en) 1984-04-25
GB8310669D0 (en) 1983-05-25
WO1983003923A1 (en) 1983-11-10
ES8403666A1 (en) 1984-04-01
IT8320700A0 (en) 1983-04-20
GB2118777A (en) 1983-11-02

Similar Documents

Publication Publication Date Title
IT1163171B (en) WHEELCHAIR
FI833728A (en) ORAL DOSERINGSFORM
ES282376Y (en) A SYRINGE
ES521166A0 (en) A SEMICONDUCTOR PROTECTION CIRCUIT PROVISION.
IT1171791B (en) INTERFACE CIRCUIT
DE3379434D1 (en) INTEGRATED CIRCUIT VOLTAGE MULTIPLIER
IT1140065B (en) SEMICONDUCTOR INTEGRATED CIRCUIT
DE3479943D1 (en) A MASTERSLICE SEMICONDUCTOR DEVICE
ES488567A0 (en) A COMMUTATION CIRCUIT PROVISION
IT8421908A0 (en) SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE.
IT1123267B (en) INTEGRATED CIRCUIT STRUCTURE
FI831729A0 (en) A / D-OMFORMARE AV FLASH-TYP MED LITEN INGAONGSBELASTNING
IT1141374B (en) SEMICONDUCTOR INTEGRATED CIRCUIT
FR2553542B1 (en) INTEGRATED SEMICONDUCTOR CIRCUIT
ES280973Y (en) IMPROVEMENTS IN A SPEARGUN
IT1206117B (en) DEMULTIPLATOR CIRCUIT.
FI830324A0 (en) ELECTRONIC BALLASTSYSTEM FOER GASURLADDNINGSROER
ES486675A0 (en) A COMMUTATION CIRCUIT PROVISION
ES521708A0 (en) IMPROVEMENTS IN A SEMI-CONDUCTIVE STRUCTURE OF INTEGRATED CIRCUIT.
KR840006724A (en) Pintion correction circuit
FI830659A0 (en) Circuit arrangement
IT1170191B (en) INTEGRATED RESISTOR
ES547346A0 (en) INTEGRATED CIRCUIT
MX150525A (en) IMPROVEMENTS IN OSCILLATOR CIRCUIT
FI833024A0 (en) Circuit arrangement