ES508366A0 - "procedimiento para la produccion de transposiciones pn verticales en el estirado de bandas, poligonos o tubos de silicio". - Google Patents

"procedimiento para la produccion de transposiciones pn verticales en el estirado de bandas, poligonos o tubos de silicio".

Info

Publication number: ES508366A0
Authority: ES; Spain
Prior art keywords: transpositions; polygons; bands; stretch; procedure
Prior art date: 1980-12-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

ES508366A

Other languages

English (en)

Other versions

ES8302807A1 (es

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Heliotronic GmbH

Original Assignee

Heliotronic GmbH

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-12-29

Filing date

1981-12-28

Publication date

1982-12-01

1981-12-28 Application filed by Heliotronic GmbH filed Critical Heliotronic GmbH

1982-12-01 Publication of ES8302807A1 publication Critical patent/ES8302807A1/es

1982-12-01 Publication of ES508366A0 publication Critical patent/ES508366A0/es

Status Granted legal-status Critical Current

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Photovoltaic Devices (AREA)

ES508366A 1980-12-29 1981-12-28 "procedimiento para la produccion de transposiciones pn verticales en el estirado de bandas, poligonos o tubos de silicio". Granted ES508366A0 (es)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE19803049376 DE3049376A1 (de)	1980-12-29	1980-12-29	Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze

Publications (2)

Publication Number	Publication Date
ES8302807A1 ES8302807A1 (es)	1982-12-01
ES508366A0 true ES508366A0 (es)	1982-12-01

Family

ID=6120484

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
ES508366A Granted ES508366A0 (es)	1980-12-29	1981-12-28	"procedimiento para la produccion de transposiciones pn verticales en el estirado de bandas, poligonos o tubos de silicio".

Country Status (7)

Country	Link
US (1)	US4428783A (es)
EP (1)	EP0055372B1 (es)
JP (1)	JPS5945634B2 (es)
AU (1)	AU543147B2 (es)
DE (2)	DE3049376A1 (es)
ES (1)	ES508366A0 (es)
ZA (1)	ZA818929B (es)

Families Citing this family (37)

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Publication number	Priority date	Publication date	Assignee	Title
DE3231268A1 (de) *	1982-08-23	1984-02-23	Siemens AG, 1000 Berlin und 8000 München	Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen
DE3518829A1 (de) *	1985-05-24	1986-11-27	Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen	Verfahren zur herstellung von formkoerpern aus siliciumgranulat fuer die erzeugung von siliciumschmelzen
EP0235467B1 (en) *	1986-02-24	1990-05-09	Shimadzu Corporation	Rotary fluid energy converter
JPS6424089A (en) *	1987-07-21	1989-01-26	Shinetsu Handotai Kk	Device for adjusting initial position of melt surface
US4927489A (en) *	1988-06-02	1990-05-22	Westinghouse Electric Corp.	Method for doping a melt
US5106763A (en) *	1988-11-15	1992-04-21	Mobil Solar Energy Corporation	Method of fabricating solar cells
US5156978A (en) *	1988-11-15	1992-10-20	Mobil Solar Energy Corporation	Method of fabricating solar cells
US4997628A (en) *	1989-08-24	1991-03-05	Westinghouse Electric Corp.	Web growth configuration for higher productivity and 100% feed rate capability at wide widths
JP2804455B2 (ja) *	1995-03-24	1998-09-24	科学技術振興事業団	温度変動を制御したＳｉ単結晶の育成方法
JP2804456B2 (ja) *	1995-03-24	1998-09-24	科学技術振興事業団	半径方向に関する不純物濃度分布が均一なＳｉ単結晶の育成方法
US5993540A (en) *	1995-06-16	1999-11-30	Optoscint, Inc.	Continuous crystal plate growth process and apparatus
US6800137B2 (en)	1995-06-16	2004-10-05	Phoenix Scientific Corporation	Binary and ternary crystal purification and growth method and apparatus
CN1155107C (zh) *	1995-10-05	2004-06-23	埃伯乐太阳能公司	具有自对准局域深扩散发射极的太阳能电池及其制造方法
US6143633A (en) *	1995-10-05	2000-11-07	Ebara Solar, Inc.	In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon
JP4607307B2 (ja) *	2000-09-28	2011-01-05	信越半導体株式会社	太陽電池用シリコン単結晶及び太陽電池用シリコン単結晶ウエーハ並びにその製造方法
JP4723071B2 (ja) *	2000-10-24	2011-07-13	信越半導体株式会社	シリコン結晶及びシリコン結晶ウエーハ並びにその製造方法
US20090227095A1 (en) *	2008-03-05	2009-09-10	Nicholas Bateman	Counterdoping for solar cells
US7855087B2 (en) *	2008-03-14	2010-12-21	Varian Semiconductor Equipment Associates, Inc.	Floating sheet production apparatus and method
US8064071B2 (en) *	2008-03-14	2011-11-22	Varian Semiconductor Equipment Associates, Inc.	Floating sheet measurement apparatus and method
US7816153B2 (en) *	2008-06-05	2010-10-19	Varian Semiconductor Equipment Associates, Inc.	Method and apparatus for producing a dislocation-free crystalline sheet
KR20110042053A (ko) *	2008-06-11	2011-04-22	솔라 임플란트 테크놀로지스 아이엔씨.	주입을 이용한 솔라 셀-선택 에미터의 형성 및 어닐링 방법
US8545624B2 (en) *	2008-06-20	2013-10-01	Varian Semiconductor Equipment Associates, Inc.	Method for continuous formation of a purified sheet from a melt
US9567691B2 (en)	2008-06-20	2017-02-14	Varian Semiconductor Equipment Associates, Inc.	Melt purification and delivery system
US8475591B2 (en) *	2008-08-15	2013-07-02	Varian Semiconductor Equipment Associates, Inc.	Method of controlling a thickness of a sheet formed from a melt
US7998224B2 (en)	2008-10-21	2011-08-16	Varian Semiconductor Equipment Associates, Inc.	Removal of a sheet from a production apparatus
JP2012521642A (ja) *	2009-03-20	2012-09-13	インテバック・インコーポレイテッド	太陽電池及びその製造方法
US8790460B2 (en) *	2009-05-18	2014-07-29	Empire Technology Development Llc	Formation of silicon sheets by impinging fluid
US8749053B2 (en)	2009-06-23	2014-06-10	Intevac, Inc.	Plasma grid implant system for use in solar cell fabrications
KR20140110851A (ko)	2011-11-08	2014-09-17	인테벡, 인코포레이티드	기판 프로세싱 시스템 및 방법
FR2994982B1 (fr)	2012-09-04	2016-01-08	Commissariat Energie Atomique	Procede de fabrication d'une plaquette en silicium monolithique a multi-jonctions verticales.
US9318332B2 (en)	2012-12-19	2016-04-19	Intevac, Inc.	Grid for plasma ion implant
US10920337B2 (en)	2016-12-28	2021-02-16	Globalwafers Co., Ltd.	Methods for forming single crystal silicon ingots with improved resistivity control
JP7503053B2 (ja)	2018-10-12	2024-06-19	グローバルウェーハズカンパニーリミテッド	インゴットの品質を向上するためのシリコン融液中のドーパント濃度制御
WO2020214531A1 (en)	2019-04-18	2020-10-22	Globalwafers Co., Ltd.	Methods for growing a single crystal silicon ingot using continuous czochralski method
US11111597B2 (en)	2019-09-13	2021-09-07	Globalwafers Co., Ltd.	Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
US11111596B2 (en)	2019-09-13	2021-09-07	Globalwafers Co., Ltd.	Single crystal silicon ingot having axial uniformity
CN112195515B (zh) *	2020-09-29	2022-03-01	晶科能源股份有限公司	硅晶体及其制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE1023146B (de) *	1953-09-30	1958-01-23	Gen Electric	Verfahren zur Herstellung von Halbleitern mit p-n-Schicht und/oder von n-p-n-Transistoren
DE941743C (de) *	1954-03-20	1956-04-19	Licentia Gmbh	Elektrisch unsymmetrisch leitendes System, insbesondere zur Verwendung als Hochspannungsgleichrichter und Verfahren zu seiner Herstellung
US2999776A (en)	1955-01-13	1961-09-12	Siemens Ag	Method of producing differentiated doping zones in semiconductor crystals
US2950219A (en)	1955-02-23	1960-08-23	Rauland Corp	Method of manufacturing semiconductor crystals
US2822308A (en)	1955-03-29	1958-02-04	Gen Electric	Semiconductor p-n junction units and method of making the same
DE1052571B (de) *	1955-03-29	1959-03-12	Gen Electric	Halbleiter mit pn-UEbergang und Verfahren zu seiner Herstellung
US2852420A (en)	1956-06-28	1958-09-16	Rauland Corp	Method of manufacturing semiconductor crystals
US2879189A (en)	1956-11-21	1959-03-24	Shockley William	Method for growing junction semi-conductive devices
BE567569A (es)	1957-06-25	1900-01-01
GB916385A (en) *	1958-05-27	1963-01-23	Philips Electrical Ind Ltd	Improvements in or relating to methods of producing rods of semi-conductive material
US3082130A (en)	1958-10-30	1963-03-19	Texas Instruments Inc	Compensated grown junction transistor
NL262176A (es)	1960-03-11	1900-01-01
US3192082A (en)	1962-10-23	1965-06-29	Hitachi Ltd	Process for the production of npn or pnp junction
FR1393063A (fr) *	1963-05-13	1965-03-19	Kokusai Electric Co Ltd	Perfectionnement au procédé de production de monocristaux par tirage
US3969746A (en)	1973-12-10	1976-07-13	Texas Instruments Incorporated	Vertical multijunction solar cell
US4155781A (en)	1976-09-03	1979-05-22	Siemens Aktiengesellschaft	Method of manufacturing solar cells, utilizing single-crystal whisker growth
US4359487A (en)	1980-07-11	1982-11-16	Exxon Research And Engineering Co.	Method for applying an anti-reflection coating to a solar cell

1980
- 1980-12-29 DE DE19803049376 patent/DE3049376A1/de not_active Withdrawn
1981
- 1981-10-28 EP EP81109063A patent/EP0055372B1/de not_active Expired
- 1981-10-28 DE DE8181109063T patent/DE3172150D1/de not_active Expired
- 1981-11-12 JP JP56180461A patent/JPS5945634B2/ja not_active Expired
- 1981-12-02 AU AU78185/81A patent/AU543147B2/en not_active Ceased
- 1981-12-14 US US06/330,331 patent/US4428783A/en not_active Expired - Fee Related
- 1981-12-28 ES ES508366A patent/ES508366A0/es active Granted
- 1981-12-28 ZA ZA818929A patent/ZA818929B/xx unknown

Also Published As

Publication number	Publication date
DE3172150D1 (en)	1985-10-10
US4428783A (en)	1984-01-31
ES8302807A1 (es)	1982-12-01
AU7818581A (en)	1982-07-08
AU543147B2 (en)	1985-04-04
JPS5945634B2 (ja)	1984-11-07
EP0055372B1 (de)	1985-09-04
EP0055372A1 (de)	1982-07-07
JPS57118089A (en)	1982-07-22
DE3049376A1 (de)	1982-07-29
ZA818929B (en)	1982-11-24

Publication	Publication Date	Title
ES508366A0 (es)	1982-12-01	"procedimiento para la produccion de transposiciones pn verticales en el estirado de bandas, poligonos o tubos de silicio".
ES518180A0 (es)	1983-10-01	Procedimiento para la preparacion de bis-trihidroxibutil-amidas de acidos 2,4,6-triyodoaminoisoftalicos, hidroxietiladas en n.
BE896830A (fr)	1983-09-16	Procede de preparation du 26, 26, 26, 27, 27, 27-hexafluoro-1 alpha, 25-dihydroxycholesterol.
ES513916A0 (es)	1983-04-01	"procedimiento para la produccion de dimetileter".
IT8224000A0 (it)	1982-10-29	Generatore d'aria calda per occhiali, ad effetto globale.
IT1145435B (it)	1986-11-05	Procedimento per la produzione di 2,3-dimetilbutene-2
IT1172398B (it)	1987-06-18	Procedimento per la produzione di 1,2-diclorcetano
IT7921266A0 (it)	1979-03-23	Procedimento per la fabbricazione monoetilfosfito d'alluminio.
JPS5274949A (en)	1977-06-23	Heat exchanger
IT8223167A0 (it)	1982-09-08	Procedimento per la produzione dicloruri metallici.
ES520847A0 (es)	1983-12-16	Procedimiento para la preparacion de 1,2,4-triazol-1-il-propionitrilos.
ES515748A0 (es)	1983-08-16	"perfeccionamientos en los dispositivos para el avance de hilos metalicos en maquinas para la fabricacion de cadenas".
IT7925880A0 (it)	1979-09-20	Procedimento per la preparazione di 1,2,3-tiadiazol-5-il-uree.
IT7924894A0 (it)	1979-08-02	Procedimento per la preparazione di 7, 8dicloro-tetraidro-isochinolina.
ES507200A0 (es)	1983-02-01	Procedimiento para la fabricacion de derivados de la 5,6,7.8-tetrahidro-1,6-naftiridina.
ES272852Y (es)	1984-07-16	"aparato para la produccion de granizado".
ES515925A0 (es)	1983-10-16	"procedimiento para la produccion de estilben-4,4'-dialdehido".
ES514621A0 (es)	1983-12-16	"proceso para la produccion de 5,3',4',6"-tetradesoxikanamicina b".
IT8026742A0 (it)	1980-12-18	Procedimento per la produzione di 1,3,5-triclorobenzene.
IT8284969A0 (it)	1982-11-26	Compositoio perfezionato per mascherine da lettere, cifre e simili
ES544506A0 (es)	1986-01-01	Procedimiento para la obtencion del 1,6-dihidro-2-metil-6-oxo (3,4'-bipiridino)-4-carbonitrilo.
ES544507A0 (es)	1986-01-01	Procedimiento para la obtencion del 1,6-dihidro-2-metil-6-oxo (3,4'-bipiridino)-5-carbonitrilo.
IT8223335V0 (it)	1982-10-29	Generatore d'aria calda per occhiali, ad effetto globale.
IT8025322A0 (it)	1980-10-14	Procedimento per la realizzazione di calzature, nonche' calzatura realizzata.
IT7819169A0 (it)	1978-01-11	Procedimento per la fabbricazione di calze-mutande, macchina circolare per l'attuazione del procedimento e prodotto ottenuto.