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ES432700A1 - Methods of forming a conductive pattern on a supporting body - Google Patents

Methods of forming a conductive pattern on a supporting body

Info

Publication number
ES432700A1
ES432700A1 ES432700A ES432700A ES432700A1 ES 432700 A1 ES432700 A1 ES 432700A1 ES 432700 A ES432700 A ES 432700A ES 432700 A ES432700 A ES 432700A ES 432700 A1 ES432700 A1 ES 432700A1
Authority
ES
Spain
Prior art keywords
conductive layer
layer
auxiliary layer
forming
openings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES432700A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES432700A1 publication Critical patent/ES432700A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

An improved method of chemical etching is to manufacture an electrical translation device with a conductor path on a support body, in which method an auxiliary layer having one or more openings corresponding to at least one is arranged on a body surface. part of the layout to be provided, after which an electrically conductive layer of a material different from that of the auxiliary layer is placed on the auxiliary layer and in the openings, and then at least the upper part of the auxiliary layer is selectively removed with the part of the conductive layer that is on it, the part of the conductive layer that remains in the openings forming part of the conductor layout, characterized in that after removing a first auxiliary layer with the part of a first conductive layer present on it, whereby a first part of the conductor layout is obtained, a second layer au xiliary of a material different from that of the first conductive layer and having one or more additional openings corresponding to a second part of the conductor path, by providing on said second auxiliary layer and in said additional openings a second conductive layer of a material different from that of the second auxiliary layer, and because at least the part in the highest position of the second auxiliary layer is then selectively removed with the part of the second conductive layer that is above it, forming a second part of the path of conductors the part of the second conductive layer that remains in the additional openings. (Machine-translation by Google Translate, not legally binding)
ES432700A 1973-12-10 1974-12-07 Methods of forming a conductive pattern on a supporting body Expired ES432700A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7316851A NL7316851A (en) 1973-12-10 1973-12-10 PROCESS OF MANUFACTURING A DEVICE, IN PARTICULAR A SEMICONDUCTOR DEVICE, WITH A CONDUCTOR PATTERN ON A SUPPORT BODY, AND DEVICE MANUFACTURED BY THE PROCESS.

Publications (1)

Publication Number Publication Date
ES432700A1 true ES432700A1 (en) 1977-03-01

Family

ID=19820155

Family Applications (1)

Application Number Title Priority Date Filing Date
ES432700A Expired ES432700A1 (en) 1973-12-10 1974-12-07 Methods of forming a conductive pattern on a supporting body

Country Status (12)

Country Link
JP (1) JPS5646263B2 (en)
BE (1) BE823138A (en)
BR (1) BR7410276A (en)
CA (1) CA1018677A (en)
CH (1) CH588164A5 (en)
DE (1) DE2455963A1 (en)
ES (1) ES432700A1 (en)
FR (1) FR2254105B1 (en)
GB (1) GB1490715A (en)
IT (1) IT1026859B (en)
NL (1) NL7316851A (en)
SE (1) SE405429B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5370688A (en) * 1976-12-06 1978-06-23 Toshiba Corp Production of semoconductor device
CN108235597B (en) * 2018-02-08 2024-02-23 惠州奔达电子有限公司 PCB manufacturing method and PCB
JP7164773B2 (en) * 2018-03-02 2022-11-02 東京エレクトロン株式会社 How to transfer the pattern to the layer
CN112259455B (en) * 2020-10-19 2024-01-26 扬州扬杰电子科技股份有限公司 Method for improving metal residue of Ag surface product with passivation layer structure

Also Published As

Publication number Publication date
AU7621174A (en) 1976-06-10
BR7410276A (en) 1976-06-29
NL7316851A (en) 1975-06-12
IT1026859B (en) 1978-10-20
JPS5092089A (en) 1975-07-23
CH588164A5 (en) 1977-05-31
CA1018677A (en) 1977-10-04
FR2254105A1 (en) 1975-07-04
FR2254105B1 (en) 1978-06-23
SE405429B (en) 1978-12-04
GB1490715A (en) 1977-11-02
JPS5646263B2 (en) 1981-10-31
BE823138A (en) 1975-06-09
SE7415380L (en) 1975-06-11
DE2455963A1 (en) 1975-06-12

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