[go: up one dir, main page]

ES409621A1 - Procedimiento para la corrosion alcalina de sistemas semi- conductores. - Google Patents

Procedimiento para la corrosion alcalina de sistemas semi- conductores.

Info

Publication number
ES409621A1
ES409621A1 ES409621A ES409621A ES409621A1 ES 409621 A1 ES409621 A1 ES 409621A1 ES 409621 A ES409621 A ES 409621A ES 409621 A ES409621 A ES 409621A ES 409621 A1 ES409621 A1 ES 409621A1
Authority
ES
Spain
Prior art keywords
alkaline etching
semiconductor bodies
semiconductor systems
semiconductor
germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES409621A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of ES409621A1 publication Critical patent/ES409621A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Thyristors (AREA)
ES409621A 1972-03-23 1972-12-14 Procedimiento para la corrosion alcalina de sistemas semi- conductores. Expired ES409621A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722214197 DE2214197C3 (de) 1972-03-23 1972-03-23 Verfahren zum Ätzen von PN-Übergänge enthaltenden Halbleiterscheiben

Publications (1)

Publication Number Publication Date
ES409621A1 true ES409621A1 (es) 1975-12-01

Family

ID=5839938

Family Applications (1)

Application Number Title Priority Date Filing Date
ES409621A Expired ES409621A1 (es) 1972-03-23 1972-12-14 Procedimiento para la corrosion alcalina de sistemas semi- conductores.

Country Status (11)

Country Link
JP (1) JPS525230B2 (ru)
AT (1) AT325678B (ru)
BE (1) BE797244A (ru)
CH (1) CH575175A5 (ru)
DE (1) DE2214197C3 (ru)
ES (1) ES409621A1 (ru)
FR (1) FR2176664B1 (ru)
GB (1) GB1362507A (ru)
IT (1) IT972618B (ru)
NL (1) NL7217673A (ru)
SE (1) SE378478B (ru)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB889872A (en) * 1957-04-24 1962-02-21 Sarkes Tarzian A method of treating a semi-conductor device
FR1266612A (fr) * 1960-06-02 1961-07-17 Solutions d'attaque chimiques pour le traitement en surface des matériaux semiconducteurs
NL271850A (ru) * 1961-02-03
GB980513A (en) * 1961-11-17 1965-01-13 Licentia Gmbh Improvements relating to the use of silicon in semi-conductor devices
DE1621511A1 (de) * 1967-04-01 1970-07-23 Siemens Ag Verfahren zum Entspiegeln von Siliziumeinkristalloberflaechen

Also Published As

Publication number Publication date
NL7217673A (ru) 1973-09-25
FR2176664B1 (ru) 1977-12-30
AT325678B (de) 1975-11-10
JPS4915371A (ru) 1974-02-09
JPS525230B2 (ru) 1977-02-10
FR2176664A1 (ru) 1973-11-02
DE2214197B2 (de) 1981-04-23
DE2214197A1 (de) 1973-09-27
BE797244A (fr) 1973-07-16
ATA1017072A (de) 1975-01-15
GB1362507A (en) 1974-08-07
SE378478B (ru) 1975-09-01
IT972618B (it) 1974-05-31
DE2214197C3 (de) 1982-01-14
CH575175A5 (ru) 1976-04-30

Similar Documents

Publication Publication Date Title
AT325009B (de) Nichtwasserige wasserstoffperoxid-lösungen
BE806226A (fr) Generateur electrochimique de grande energie specifique
DK128327B (da) Anvendelse af tetraacylerede glycoluriler som aktivatører til perforbindelser.
MX144055A (es) Mejoras en un metodo para preparar una solucion estabilizada de peroxido de hidrogeno
ES409621A1 (es) Procedimiento para la corrosion alcalina de sistemas semi- conductores.
SE401841B (sv) Eletrolysor med multipelceller for framstellnig av alkalimetallhydroxid, serskilt natriumhydroxid
IT1012505B (it) Estratto di ricci di mare
JPS5333080A (en) Light emitting semiconductor device and its production
JPS5414181A (en) Semiconductor laser unit
DK134353B (da) Vaske- og rengøringsmiddel indeholdende buildersalte.
NL143679B (nl) Waterafscheider-oververhitter.
CH233256A (de) Dampf-Gas-Wärmekraftanlage.
AR195379A1 (es) Un aparato para minizar el borroneado de una imagen y la socavacion causada por iones, y un procedimiento para ser llevado a cabo mediante dicho aparato
SU67802A1 (ru) Гидроэлектростанци , расположенна в теле плотины под ее водосливом
SE386923B (sv) Forfarande for atervinning av kemikalier fran avlut, spec. avlut fran sulfitkokning pa natriumbas
DK131983C (da) Fremgangsmade til regenerering af en arbejdsoplosning til fremstilling af hydrogenperoxyd
FR3782M (fr) Nouvelle isoquinoléine utilisable en thérapeutique, notamment comme béchique.
ES178738A1 (es) Mejoras relacionadas con la fabricacion de elementos de conductividad asimétrica
IT1050361B (it) Procedimento per la fabbricazione di n n dietil m toluammide col procedimento in soluzione acquosa caustica
CH502514A (de) Doppelgehäuse für Dampfturbinen grosser Leistung
ES173208A1 (es) Un sistema mecánico de doble efecto para la obtención del aprovechamiento industrial de las energías naturales producidas por el oleaje de los mares, en combinación con la gravedad o acción atractiva terrestre, mediante una serie ilimitada de pares de flotadores
FR1277685A (fr) Ailette creuse, notamment pour turbines
BE764030A (fr) Circuit semiconducteur integre, notamment pour conversion de lumiere
ES153915A2 (es) Mejoras introducidas en el objeto de la patente principal
DK128177B (da) Katode til alkaliske primærceller.