[go: up one dir, main page]

ES397861A1 - PROCEDURE TO EXTEND THE USEFUL LIFE OF A LIGHT EMITTERING P-N JOINT DEVICE CONTAINING A GALIUM COMPOUND. - Google Patents

PROCEDURE TO EXTEND THE USEFUL LIFE OF A LIGHT EMITTERING P-N JOINT DEVICE CONTAINING A GALIUM COMPOUND.

Info

Publication number
ES397861A1
ES397861A1 ES397861A ES397861A ES397861A1 ES 397861 A1 ES397861 A1 ES 397861A1 ES 397861 A ES397861 A ES 397861A ES 397861 A ES397861 A ES 397861A ES 397861 A1 ES397861 A1 ES 397861A1
Authority
ES
Spain
Prior art keywords
procedure
light
useful life
compound
device containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES397861A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES397861A1 publication Critical patent/ES397861A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Led Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Procedimiento para prolongar ca vida útil de un dispositivo de unión p-n emisor de luz que contiene un compuesto de galio, que comprende las etapas de: producir el crecimiento de una película de óxido de galio amorfo o una forma hidratada del mismo sobre la superficie del dispositivo sumergiendo el dispositivo en un sistema oxidante acuoso; y secar en caliente dicho dispositivo a una temperatura elevada para extraer cualquier exceso de humedad de dicha película de óxido.Procedure for prolonging the useful life of a light-emitting pn junction device containing a gallium compound, comprising the steps of: producing the growth of an amorphous gallium oxide film or a hydrated form thereof on the surface of the device immersing the device in an aqueous oxidizing system; and heat drying said device at an elevated temperature to remove any excess moisture from said oxide film.

ES397861A 1970-11-30 1971-11-30 PROCEDURE TO EXTEND THE USEFUL LIFE OF A LIGHT EMITTERING P-N JOINT DEVICE CONTAINING A GALIUM COMPOUND. Expired ES397861A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9354470A 1970-11-30 1970-11-30
US14196471A 1971-05-10 1971-05-10

Publications (1)

Publication Number Publication Date
ES397861A1 true ES397861A1 (en) 1975-04-16

Family

ID=26787656

Family Applications (1)

Application Number Title Priority Date Filing Date
ES397861A Expired ES397861A1 (en) 1970-11-30 1971-11-30 PROCEDURE TO EXTEND THE USEFUL LIFE OF A LIGHT EMITTERING P-N JOINT DEVICE CONTAINING A GALIUM COMPOUND.

Country Status (13)

Country Link
JP (1) JPS5131153B1 (en)
BE (1) BE775868A (en)
CA (1) CA920285A (en)
CH (1) CH536035A (en)
DE (1) DE2158681C3 (en)
ES (1) ES397861A1 (en)
FR (1) FR2116159A5 (en)
GB (1) GB1360073A (en)
IE (1) IE35848B1 (en)
IT (1) IT945195B (en)
NL (1) NL155131B (en)
PH (1) PH11254A (en)
SE (1) SE367532B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3776789A (en) * 1972-05-01 1973-12-04 Ibm METHOD FOR PROTECTING GaAs WAFER SURFACES
FR2287776A1 (en) * 1974-10-09 1976-05-07 Lignes Telegraph Telephon METHOD OF MANUFACTURING IN SERIES OF PHOTOEMISSIVE DIODES AND DIODES SO REALIZED
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US5550089A (en) * 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
US5451548A (en) * 1994-03-23 1995-09-19 At&T Corp. Electron beam deposition of gallium oxide thin films using a single high purity crystal source
DE19509864C2 (en) * 1995-03-17 2001-10-04 Oce Printing Systems Gmbh Process for aging light-emitting diodes
WO2002015281A2 (en) * 2000-08-17 2002-02-21 Power Signal Technologies, Inc. Glass-to-metal hermetically sealed led array
DE10261675B4 (en) * 2002-12-31 2013-08-14 Osram Opto Semiconductors Gmbh Optoelectronic component with radiation-permeable electrical contact layer
CN111725363A (en) * 2020-05-28 2020-09-29 南京中电熊猫液晶显示科技有限公司 A miniature light-emitting diode backplane and its manufacturing method

Also Published As

Publication number Publication date
FR2116159A5 (en) 1972-07-07
CH536035A (en) 1973-04-15
DE2158681B2 (en) 1975-08-14
DE2158681C3 (en) 1978-12-07
NL155131B (en) 1977-11-15
CA920285A (en) 1973-01-30
NL7116220A (en) 1972-06-01
BE775868A (en) 1972-03-16
SE367532B (en) 1974-05-27
PH11254A (en) 1977-10-28
JPS5131153B1 (en) 1976-09-04
DE2158681A1 (en) 1972-07-20
GB1360073A (en) 1974-07-17
IE35848B1 (en) 1976-06-09
IE35848L (en) 1972-05-30
IT945195B (en) 1973-05-10

Similar Documents

Publication Publication Date Title
CH527543A (en) Electroluminescent diode
NL7512244A (en) LIGHT-EMITTING DIODE.
NL153326B (en) HEAT TRANSPORT DEVICE.
ES397861A1 (en) PROCEDURE TO EXTEND THE USEFUL LIFE OF A LIGHT EMITTERING P-N JOINT DEVICE CONTAINING A GALIUM COMPOUND.
NL7512117A (en) DIODE LASER.
NL7415007A (en) SEMICONDUCTOR LASER WITH HETEROSTRUCTURE JUNCTIONS
GT197642549A (en) PROCEDURE TO CONTROL COCKROACHES AND OTHER TRAILING INSECTS
CH530686A (en) Display device with at least one light-emitting electroluminescent diode
NL163677C (en) Semiconductor diode for emitting light.
DE1917435U (en) HOLDING DEVICE WITH ASSOCIATED LIGHT BULB.
BE763031A (en) DIRECTED LIGHT EMITTING DIODE
NL153030B (en) LIGHT-EMISSIONING SEMICONDUCTOR DIODE.
CH515616A (en) Semiconductor diode
NL7509408A (en) LENSED LIGHT EMISSION DIODE.
IT1029416B (en) LIGHT EMITTING GALLIUM FOSURO DEVICE
DE1639146B2 (en) PROCESS FOR MANUFACTURING AN ELECTROLUMINESCENT SEMICONDUCTOR DIODE WITH P-N TRANSITION
IT945589B (en) PERFECTED SUBSTRATE FOR GROUNDLESS PLANT GROWING
ES197170Y (en) AN IRRIGATION INSERTION FOR REFRIGERATION TOWERS.
FI40644C (en) Power strip system mainly for lighting and small motor supply
NL159828B (en) SEMICONDUCTOR INJECTION LASER WITH HETEROSTRUCTURE.
KR780000083B1 (en) Light emitting hetero structure diode
ES124949Y (en) SOLAR DEVICE FOR LIGHTING CIGARS.
AT339973B (en) LASER DIODE MADE OF SEMICONDUCTOR MATERIAL
AT269237B (en) Semiconductor light emitting diode with a very high luminous efficiency
AU435397B2 (en) Extending the operating life of light emitting p-n junction devices