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ES388721A1 - SEMICONDUCTOR INFORMATION STORAGE DEVICE. - Google Patents

SEMICONDUCTOR INFORMATION STORAGE DEVICE.

Info

Publication number
ES388721A1
ES388721A1 ES388721A ES388721A ES388721A1 ES 388721 A1 ES388721 A1 ES 388721A1 ES 388721 A ES388721 A ES 388721A ES 388721 A ES388721 A ES 388721A ES 388721 A1 ES388721 A1 ES 388721A1
Authority
ES
Spain
Prior art keywords
carriers
storage device
information storage
transition region
moving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES388721A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES388721A1 publication Critical patent/ES388721A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/476—Three-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Facsimile Heads (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image Input (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Luminescent Compositions (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Measurement Of Radiation (AREA)

Abstract

Semiconductor information storage device comprising a body of electroluminescent semiconductor material, means associated with a surface of said body to form a transition region located in a first position in said body, input means to create minority charge carriers in the region of transition said carriers represent the input of information, means for moving said carriers through said body in a direction essentially parallel to said surface comprising means for moving said transition region from said first position to said second position, and means acting on the load carriers in the second position to weaken said transition region and thus generate a light output in said second position. (Machine-translation by Google Translate, not legally binding)
ES388721A 1970-02-16 1971-02-15 SEMICONDUCTOR INFORMATION STORAGE DEVICE. Expired ES388721A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1144670A 1970-02-16 1970-02-16

Publications (1)

Publication Number Publication Date
ES388721A1 true ES388721A1 (en) 1974-05-01

Family

ID=21750410

Family Applications (1)

Application Number Title Priority Date Filing Date
ES388721A Expired ES388721A1 (en) 1970-02-16 1971-02-15 SEMICONDUCTOR INFORMATION STORAGE DEVICE.

Country Status (9)

Country Link
BE (1) BE762943A (en)
CH (1) CH534941A (en)
DE (1) DE2107110B2 (en)
ES (1) ES388721A1 (en)
FR (1) FR2091962B1 (en)
GB (1) GB1340617A (en)
IE (1) IE34899B1 (en)
NL (1) NL7101991A (en)
SE (1) SE373966B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5318155B2 (en) * 1971-12-29 1978-06-13
US4032952A (en) 1972-04-03 1977-06-28 Hitachi, Ltd. Bulk charge transfer semiconductor device
CA1106477A (en) * 1972-07-10 1981-08-04 Carlo H. Sequin Overflow channel for charge transfer imaging devices
FR2259438B1 (en) * 1974-01-24 1976-10-08 Commissariat Energie Atomique
DE2733707C2 (en) * 1977-07-26 1985-05-15 Siemens AG, 1000 Berlin und 8000 München Semiconductor component, suitable for optoelectronic image recording and / or image reproduction devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424934A (en) * 1966-08-10 1969-01-28 Bell Telephone Labor Inc Electroluminescent cell comprising zinc-doped gallium arsenide on one surface of a silicon nitride layer and spaced chromium-gold electrodes on the other surface
US3473032A (en) * 1968-02-08 1969-10-14 Inventors & Investors Inc Photoelectric surface induced p-n junction device
NL155155B (en) * 1968-04-23 1977-11-15 Philips Nv DEVICE FOR CONVERSION OF A PHYSICAL PATTERN INTO AN ELECTRICAL SIGNAL AS A FUNCTION OF TIME, THE TELEVISION CAMERA CONTAINED, AS WELL AS SEMI-CONDUCTOR DEVICE FOR USE THEREIN.
US3623026A (en) * 1969-01-21 1971-11-23 Gen Electric Mis device and method for storing information and providing an optical readout

Also Published As

Publication number Publication date
NL7101991A (en) 1971-08-18
DE2107110B2 (en) 1975-02-06
FR2091962A1 (en) 1972-01-21
BE762943A (en) 1971-07-16
GB1340617A (en) 1973-12-12
IE34899B1 (en) 1975-09-17
DE2107110A1 (en) 1971-09-23
IE34899L (en) 1971-08-16
SE373966B (en) 1975-02-17
CH534941A (en) 1973-03-15
FR2091962B1 (en) 1974-04-26

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