ES350146A1 - Un dispositivo semiconductor. - Google Patents
Un dispositivo semiconductor.Info
- Publication number
- ES350146A1 ES350146A1 ES350146A ES350146A ES350146A1 ES 350146 A1 ES350146 A1 ES 350146A1 ES 350146 A ES350146 A ES 350146A ES 350146 A ES350146 A ES 350146A ES 350146 A1 ES350146 A1 ES 350146A1
- Authority
- ES
- Spain
- Prior art keywords
- region
- depression
- wafer
- junction
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 230000002093 peripheral effect Effects 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000002131 composite material Substances 0.000 abstract 1
- 238000005553 drilling Methods 0.000 abstract 1
- 238000007772 electroless plating Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB5717/67A GB1214151A (en) | 1967-02-07 | 1967-02-07 | Improvements in and relating to semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
ES350146A1 true ES350146A1 (es) | 1969-04-16 |
Family
ID=9801315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES350146A Expired ES350146A1 (es) | 1967-02-07 | 1968-02-05 | Un dispositivo semiconductor. |
Country Status (8)
Country | Link |
---|---|
AT (1) | AT280352B (es) |
BE (1) | BE710354A (es) |
CH (1) | CH474860A (es) |
DE (1) | DE1639352A1 (es) |
ES (1) | ES350146A1 (es) |
FR (1) | FR1554230A (es) |
GB (1) | GB1214151A (es) |
NL (1) | NL6801503A (es) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3017313A1 (de) * | 1980-05-06 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung |
DE3030564A1 (de) * | 1980-08-13 | 1982-03-11 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Halbleiterbauelement fuer hohe sperrspannungen |
GB8703405D0 (en) * | 1987-02-13 | 1987-03-18 | Marconi Electronic Devices | Power semi-conductor device |
CN113178385B (zh) * | 2021-03-31 | 2022-12-23 | 青岛惠科微电子有限公司 | 一种芯片的制造方法、制造设备和芯片 |
-
1967
- 1967-02-07 GB GB5717/67A patent/GB1214151A/en not_active Expired
-
1968
- 1968-02-01 NL NL6801503A patent/NL6801503A/xx unknown
- 1968-02-02 DE DE19681639352 patent/DE1639352A1/de active Pending
- 1968-02-05 ES ES350146A patent/ES350146A1/es not_active Expired
- 1968-02-05 CH CH166168A patent/CH474860A/de not_active IP Right Cessation
- 1968-02-05 BE BE710354D patent/BE710354A/xx unknown
- 1968-02-06 AT AT112068A patent/AT280352B/de not_active IP Right Cessation
- 1968-02-06 FR FR1554230D patent/FR1554230A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
BE710354A (es) | 1968-08-05 |
CH474860A (de) | 1969-06-30 |
NL6801503A (es) | 1968-08-02 |
AT280352B (de) | 1970-04-10 |
GB1214151A (en) | 1970-12-02 |
FR1554230A (es) | 1969-01-17 |
DE1639352A1 (de) | 1971-02-04 |
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