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ES337005A1 - A method of making passivated semiconductor devices - Google Patents

A method of making passivated semiconductor devices

Info

Publication number
ES337005A1
ES337005A1 ES337005A ES337005A ES337005A1 ES 337005 A1 ES337005 A1 ES 337005A1 ES 337005 A ES337005 A ES 337005A ES 337005 A ES337005 A ES 337005A ES 337005 A1 ES337005 A1 ES 337005A1
Authority
ES
Spain
Prior art keywords
cut
substrate
wafer
grooves
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES337005A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US388237A external-priority patent/US3369290A/en
Priority claimed from US478351A external-priority patent/US3383760A/en
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of ES337005A1 publication Critical patent/ES337005A1/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
    • C07D471/04—Ortho-condensed systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/55—Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Die Bonding (AREA)
  • Rectifiers (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Thyristors (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)

Abstract

Passivated semiconductor devices are made by forming a planar PN junction parallel to the major surfaces of a wafer of semi-conductor, forming grooves in one major surface to cut through the PN junction and thus give a plurality of mesas, filling the grooves with passivating material and attaching electrodes the exposed portions of the mesas. The major surface which is not grooved is fixed to a conductive substrate. A p+ type substrate 22 of Si, has semi-conductor wafer of Si, Ge or GaAs containing a PN junction joined thereto by a layer 24 of Cr, Ni, Ta, W, Nb, Mg, Ag, Co, Cu or Ti. The wafer and substrate are joined by hot pressing in an induction furnace between carbon blocks. Grooves are then cut in the wafer to give mesa portions 40, the sides of which are coated with SiO 2 44 and then the grooves filled with glass 46. The exposed surfaces of the mesas and the substrate are coated with electroless nickel and then solder applied. Electrodes are applied and soldered in place using a carbon jig (Fig. 8, not shown). The structure may then be cut vertically into a number of separate devices. In a modification a horizontal cut may be made prior to applying the lower electrode, to cut away the connecting substrate portions. Instead of joining individual electrodes in the array of devices, a plurality of devices may be joined by one conductive strip for use in integrated circuits.
ES337005A 1964-08-07 1967-02-18 A method of making passivated semiconductor devices Expired ES337005A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US388237A US3369290A (en) 1964-08-07 1964-08-07 Method of making passivated semiconductor devices
US39173264A 1964-08-24 1964-08-24
US46255765A 1965-06-09 1965-06-09
US47797665A 1965-08-06 1965-08-06
US478351A US3383760A (en) 1965-08-09 1965-08-09 Method of making semiconductor devices

Publications (1)

Publication Number Publication Date
ES337005A1 true ES337005A1 (en) 1968-01-16

Family

ID=27541415

Family Applications (1)

Application Number Title Priority Date Filing Date
ES337005A Expired ES337005A1 (en) 1964-08-07 1967-02-18 A method of making passivated semiconductor devices

Country Status (17)

Country Link
BE (1) BE668687A (en)
BG (1) BG17566A3 (en)
BR (4) BR6572394D0 (en)
CA (1) CA953297A (en)
CH (5) CH460033A (en)
CY (1) CY613A (en)
DE (3) DE1514363B1 (en)
ES (1) ES337005A1 (en)
FI (1) FI46968C (en)
FR (2) FR5364M (en)
GB (7) GB1084598A (en)
IL (1) IL24214A (en)
MC (1) MC542A1 (en)
MY (1) MY7100223A (en)
NL (4) NL6510287A (en)
NO (1) NO120580B (en)
SE (5) SE312863B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116264B2 (en) * 1971-10-01 1976-05-22
EP0603973A3 (en) * 1992-12-23 1995-06-28 Philips Electronics Nv Method of manufacturing a semiconductor device provided with a number of pn junctions separated each time by depression, and semiconductor device provided with a number of pn junctions separated each time by a depression.
EP0603971A3 (en) * 1992-12-23 1995-06-28 Koninkl Philips Electronics Nv Method of manufacturing a semiconductor device with passivated side and semiconductor device with passivated side.
US5401690A (en) * 1993-07-08 1995-03-28 Goodark Electronic Corp. Method for making circular diode chips through glass passivation
GB201111217D0 (en) 2011-07-01 2011-08-17 Ash Gaming Ltd A system and method
US9570542B2 (en) * 2014-04-01 2017-02-14 Infineon Technologies Ag Semiconductor device including a vertical edge termination structure and method of manufacturing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2865082A (en) * 1953-07-16 1958-12-23 Sylvania Electric Prod Semiconductor mount and method
NL255453A (en) * 1960-02-04
NL284599A (en) * 1961-05-26 1900-01-01

Also Published As

Publication number Publication date
GB1126354A (en) 1968-09-05
GB1126352A (en) 1968-09-05
CH460033A (en) 1968-07-31
NL6611133A (en) 1967-02-10
MC542A1 (en) 1966-04-06
FR5364M (en) 1967-09-11
BE668687A (en) 1966-02-23
GB1133376A (en) 1968-11-13
NL129867C (en) 1900-01-01
NL6607936A (en) 1966-12-12
GB1120488A (en) 1968-07-17
SE345040B (en) 1972-05-08
GB1126353A (en) 1968-09-05
DE1620294A1 (en) 1970-02-05
DE1620295A1 (en) 1970-02-19
BR6572394D0 (en) 1973-08-14
SE350500B (en) 1972-10-30
FI46968C (en) 1973-08-10
FI46968B (en) 1973-05-02
DE1620295B2 (en) 1974-10-03
FR4985M (en) 1967-04-10
BR6572393D0 (en) 1973-08-14
BR6681707D0 (en) 1973-09-06
DE1564537A1 (en) 1970-07-30
BG17566A3 (en) 1973-11-10
DE1620295C3 (en) 1975-05-22
CY613A (en) 1971-10-01
CH460007A (en) 1968-07-31
SE322227B (en) 1970-04-06
GB1084598A (en) 1967-09-27
NO120580B (en) 1970-11-09
CH460031A (en) 1968-07-31
CH460008A (en) 1968-07-31
MY7100223A (en) 1971-12-31
DE1564537B2 (en) 1973-01-25
BR6680263D0 (en) 1973-03-01
SE351641B (en) 1972-12-04
CH466298A (en) 1968-12-15
DE1514363B1 (en) 1970-06-18
SE312863B (en) 1969-07-28
IL24214A (en) 1969-06-25
GB1112334A (en) 1968-05-01
CA953297A (en) 1974-08-20
NL6510287A (en) 1966-02-08

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