ES333917A1 - Un dispositivo de microcircuito semiconductor. - Google Patents
Un dispositivo de microcircuito semiconductor.Info
- Publication number
- ES333917A1 ES333917A1 ES0333917A ES333917A ES333917A1 ES 333917 A1 ES333917 A1 ES 333917A1 ES 0333917 A ES0333917 A ES 0333917A ES 333917 A ES333917 A ES 333917A ES 333917 A1 ES333917 A1 ES 333917A1
- Authority
- ES
- Spain
- Prior art keywords
- conductivity
- type
- region
- translation
- machine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 210000000746 body region Anatomy 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/43—Resistors having PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US51119765A | 1965-12-02 | 1965-12-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES333917A1 true ES333917A1 (es) | 1967-11-01 |
Family
ID=24033862
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES0333917A Expired ES333917A1 (es) | 1965-12-02 | 1966-11-29 | Un dispositivo de microcircuito semiconductor. |
Country Status (8)
Country | Link |
---|---|
US (1) | US3430110A (es) |
BR (1) | BR6684160D0 (es) |
DE (1) | DE1564547B2 (es) |
ES (1) | ES333917A1 (es) |
FR (1) | FR1504868A (es) |
GB (1) | GB1165029A (es) |
NL (1) | NL6616936A (es) |
SE (1) | SE333196B (es) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3581165A (en) * | 1967-01-23 | 1971-05-25 | Motorola Inc | Voltage distribution system for integrated circuits utilizing low resistivity semiconductive paths for the transmission of voltages |
US3519898A (en) * | 1967-01-31 | 1970-07-07 | Nippon Electric Co | High power semiconductor device having a plurality of emitter regions |
US3538397A (en) * | 1967-05-09 | 1970-11-03 | Motorola Inc | Distributed semiconductor power supplies and decoupling capacitor therefor |
US3772097A (en) * | 1967-05-09 | 1973-11-13 | Motorola Inc | Epitaxial method for the fabrication of a distributed semiconductor power supply containing a decoupling capacitor |
US3653988A (en) * | 1968-02-05 | 1972-04-04 | Bell Telephone Labor Inc | Method of forming monolithic semiconductor integrated circuit devices |
US3573509A (en) * | 1968-09-09 | 1971-04-06 | Texas Instruments Inc | Device for reducing bipolar effects in mos integrated circuits |
US3946425A (en) * | 1969-03-12 | 1976-03-23 | Hitachi, Ltd. | Multi-emitter transistor having heavily doped N+ regions surrounding base region of transistors |
US3619735A (en) * | 1970-01-26 | 1971-11-09 | Ibm | Integrated circuit with buried decoupling capacitor |
US3769105A (en) * | 1970-01-26 | 1973-10-30 | Ibm | Process for making an integrated circuit with a damping resistor in combination with a buried decoupling capacitor |
DE2706031A1 (de) * | 1977-02-12 | 1978-08-17 | Engl Walter L Prof Dr Rer Nat | Integrierte schaltung mit einem thyristor |
DE2705990A1 (de) * | 1977-02-12 | 1978-08-17 | Engl Walter L Prof Dr Rer Nat | Integrierte schaltung mit einem thyristor e2 |
JPS596514B2 (ja) * | 1977-03-08 | 1984-02-13 | 日本電信電話株式会社 | Pn接合分離法による低漏話モノリシツクpnpnスイツチマトリクス |
US4316319A (en) * | 1977-10-25 | 1982-02-23 | International Business Machines Corporation | Method for making a high sheet resistance structure for high density integrated circuits |
US4228450A (en) * | 1977-10-25 | 1980-10-14 | International Business Machines Corporation | Buried high sheet resistance structure for high density integrated circuits with reach through contacts |
JPS5534619U (es) * | 1978-08-25 | 1980-03-06 | ||
DE2846637A1 (de) * | 1978-10-11 | 1980-04-30 | Bbc Brown Boveri & Cie | Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen |
JPS6097659A (ja) * | 1983-11-01 | 1985-05-31 | Matsushita Electronics Corp | 半導体集積回路 |
US4567542A (en) * | 1984-04-23 | 1986-01-28 | Nec Corporation | Multilayer ceramic substrate with interlayered capacitor |
US4755697A (en) * | 1985-07-17 | 1988-07-05 | International Rectifier Corporation | Bidirectional output semiconductor field effect transistor |
US5034337A (en) * | 1989-02-10 | 1991-07-23 | Texas Instruments Incorporated | Method of making an integrated circuit that combines multi-epitaxial power transistors with logic/analog devices |
US5027183A (en) * | 1990-04-20 | 1991-06-25 | International Business Machines | Isolated semiconductor macro circuit |
US5428297A (en) * | 1993-06-15 | 1995-06-27 | Grace; James W. | Precision integrated resistors |
US5608259A (en) * | 1994-03-02 | 1997-03-04 | Deshazo; Thomas R. | Reverse current flow prevention in a diffused resistor |
JP3344138B2 (ja) * | 1995-01-30 | 2002-11-11 | 株式会社日立製作所 | 半導体複合センサ |
DE19906384A1 (de) | 1999-02-16 | 2000-08-24 | Siemens Ag | IGBT mit PN-Isolation |
US8384157B2 (en) * | 2006-05-10 | 2013-02-26 | International Rectifier Corporation | High ohmic integrated resistor with improved linearity |
US11887945B2 (en) * | 2020-09-30 | 2024-01-30 | Wolfspeed, Inc. | Semiconductor device with isolation and/or protection structures |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1209312A (fr) * | 1958-12-17 | 1960-03-01 | Hughes Aircraft Co | Perfectionnements aux dispositifs semi-conducteurs du type à jonction |
GB945740A (es) * | 1959-02-06 | Texas Instruments Inc | ||
NL297820A (es) * | 1962-10-05 | |||
US3258606A (en) * | 1962-10-16 | 1966-06-28 | Integrated circuits using thermal effects | |
US3229119A (en) * | 1963-05-17 | 1966-01-11 | Sylvania Electric Prod | Transistor logic circuits |
US3265905A (en) * | 1964-02-06 | 1966-08-09 | Us Army | Integrated semiconductor resistance element |
US3341755A (en) * | 1964-03-20 | 1967-09-12 | Westinghouse Electric Corp | Switching transistor structure and method of making the same |
USB377311I5 (es) * | 1964-06-23 | 1900-01-01 | ||
US3312882A (en) * | 1964-06-25 | 1967-04-04 | Westinghouse Electric Corp | Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response |
US3327182A (en) * | 1965-06-14 | 1967-06-20 | Westinghouse Electric Corp | Semiconductor integrated circuit structure and method of making the same |
US3370995A (en) * | 1965-08-02 | 1968-02-27 | Texas Instruments Inc | Method for fabricating electrically isolated semiconductor devices in integrated circuits |
-
1965
- 1965-12-02 US US511197A patent/US3430110A/en not_active Expired - Lifetime
-
1966
- 1966-10-31 BR BR184160/66A patent/BR6684160D0/pt unknown
- 1966-11-25 FR FR85041A patent/FR1504868A/fr not_active Expired
- 1966-11-29 ES ES0333917A patent/ES333917A1/es not_active Expired
- 1966-11-29 GB GB53493/66A patent/GB1165029A/en not_active Expired
- 1966-11-30 DE DE1564547A patent/DE1564547B2/de active Granted
- 1966-12-01 NL NL6616936A patent/NL6616936A/xx unknown
- 1966-12-01 SE SE16473/66A patent/SE333196B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
BR6684160D0 (pt) | 1973-05-15 |
DE1564547B2 (de) | 1975-02-20 |
DE1564547A1 (de) | 1970-05-21 |
SE333196B (sv) | 1971-03-08 |
FR1504868A (fr) | 1967-12-08 |
NL6616936A (es) | 1967-06-05 |
US3430110A (en) | 1969-02-25 |
GB1165029A (en) | 1969-09-24 |
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