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ES333917A1 - Un dispositivo de microcircuito semiconductor. - Google Patents

Un dispositivo de microcircuito semiconductor.

Info

Publication number
ES333917A1
ES333917A1 ES0333917A ES333917A ES333917A1 ES 333917 A1 ES333917 A1 ES 333917A1 ES 0333917 A ES0333917 A ES 0333917A ES 333917 A ES333917 A ES 333917A ES 333917 A1 ES333917 A1 ES 333917A1
Authority
ES
Spain
Prior art keywords
conductivity
type
region
translation
machine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0333917A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of ES333917A1 publication Critical patent/ES333917A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/40Resistors
    • H10D1/43Resistors having PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/049Equivalence and options
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
ES0333917A 1965-12-02 1966-11-29 Un dispositivo de microcircuito semiconductor. Expired ES333917A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US51119765A 1965-12-02 1965-12-02

Publications (1)

Publication Number Publication Date
ES333917A1 true ES333917A1 (es) 1967-11-01

Family

ID=24033862

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0333917A Expired ES333917A1 (es) 1965-12-02 1966-11-29 Un dispositivo de microcircuito semiconductor.

Country Status (8)

Country Link
US (1) US3430110A (es)
BR (1) BR6684160D0 (es)
DE (1) DE1564547B2 (es)
ES (1) ES333917A1 (es)
FR (1) FR1504868A (es)
GB (1) GB1165029A (es)
NL (1) NL6616936A (es)
SE (1) SE333196B (es)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3581165A (en) * 1967-01-23 1971-05-25 Motorola Inc Voltage distribution system for integrated circuits utilizing low resistivity semiconductive paths for the transmission of voltages
US3519898A (en) * 1967-01-31 1970-07-07 Nippon Electric Co High power semiconductor device having a plurality of emitter regions
US3538397A (en) * 1967-05-09 1970-11-03 Motorola Inc Distributed semiconductor power supplies and decoupling capacitor therefor
US3772097A (en) * 1967-05-09 1973-11-13 Motorola Inc Epitaxial method for the fabrication of a distributed semiconductor power supply containing a decoupling capacitor
US3653988A (en) * 1968-02-05 1972-04-04 Bell Telephone Labor Inc Method of forming monolithic semiconductor integrated circuit devices
US3573509A (en) * 1968-09-09 1971-04-06 Texas Instruments Inc Device for reducing bipolar effects in mos integrated circuits
US3946425A (en) * 1969-03-12 1976-03-23 Hitachi, Ltd. Multi-emitter transistor having heavily doped N+ regions surrounding base region of transistors
US3619735A (en) * 1970-01-26 1971-11-09 Ibm Integrated circuit with buried decoupling capacitor
US3769105A (en) * 1970-01-26 1973-10-30 Ibm Process for making an integrated circuit with a damping resistor in combination with a buried decoupling capacitor
DE2706031A1 (de) * 1977-02-12 1978-08-17 Engl Walter L Prof Dr Rer Nat Integrierte schaltung mit einem thyristor
DE2705990A1 (de) * 1977-02-12 1978-08-17 Engl Walter L Prof Dr Rer Nat Integrierte schaltung mit einem thyristor e2
JPS596514B2 (ja) * 1977-03-08 1984-02-13 日本電信電話株式会社 Pn接合分離法による低漏話モノリシツクpnpnスイツチマトリクス
US4316319A (en) * 1977-10-25 1982-02-23 International Business Machines Corporation Method for making a high sheet resistance structure for high density integrated circuits
US4228450A (en) * 1977-10-25 1980-10-14 International Business Machines Corporation Buried high sheet resistance structure for high density integrated circuits with reach through contacts
JPS5534619U (es) * 1978-08-25 1980-03-06
DE2846637A1 (de) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen
JPS6097659A (ja) * 1983-11-01 1985-05-31 Matsushita Electronics Corp 半導体集積回路
US4567542A (en) * 1984-04-23 1986-01-28 Nec Corporation Multilayer ceramic substrate with interlayered capacitor
US4755697A (en) * 1985-07-17 1988-07-05 International Rectifier Corporation Bidirectional output semiconductor field effect transistor
US5034337A (en) * 1989-02-10 1991-07-23 Texas Instruments Incorporated Method of making an integrated circuit that combines multi-epitaxial power transistors with logic/analog devices
US5027183A (en) * 1990-04-20 1991-06-25 International Business Machines Isolated semiconductor macro circuit
US5428297A (en) * 1993-06-15 1995-06-27 Grace; James W. Precision integrated resistors
US5608259A (en) * 1994-03-02 1997-03-04 Deshazo; Thomas R. Reverse current flow prevention in a diffused resistor
JP3344138B2 (ja) * 1995-01-30 2002-11-11 株式会社日立製作所 半導体複合センサ
DE19906384A1 (de) 1999-02-16 2000-08-24 Siemens Ag IGBT mit PN-Isolation
US8384157B2 (en) * 2006-05-10 2013-02-26 International Rectifier Corporation High ohmic integrated resistor with improved linearity
US11887945B2 (en) * 2020-09-30 2024-01-30 Wolfspeed, Inc. Semiconductor device with isolation and/or protection structures

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1209312A (fr) * 1958-12-17 1960-03-01 Hughes Aircraft Co Perfectionnements aux dispositifs semi-conducteurs du type à jonction
GB945740A (es) * 1959-02-06 Texas Instruments Inc
NL297820A (es) * 1962-10-05
US3258606A (en) * 1962-10-16 1966-06-28 Integrated circuits using thermal effects
US3229119A (en) * 1963-05-17 1966-01-11 Sylvania Electric Prod Transistor logic circuits
US3265905A (en) * 1964-02-06 1966-08-09 Us Army Integrated semiconductor resistance element
US3341755A (en) * 1964-03-20 1967-09-12 Westinghouse Electric Corp Switching transistor structure and method of making the same
USB377311I5 (es) * 1964-06-23 1900-01-01
US3312882A (en) * 1964-06-25 1967-04-04 Westinghouse Electric Corp Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response
US3327182A (en) * 1965-06-14 1967-06-20 Westinghouse Electric Corp Semiconductor integrated circuit structure and method of making the same
US3370995A (en) * 1965-08-02 1968-02-27 Texas Instruments Inc Method for fabricating electrically isolated semiconductor devices in integrated circuits

Also Published As

Publication number Publication date
BR6684160D0 (pt) 1973-05-15
DE1564547B2 (de) 1975-02-20
DE1564547A1 (de) 1970-05-21
SE333196B (sv) 1971-03-08
FR1504868A (fr) 1967-12-08
NL6616936A (es) 1967-06-05
US3430110A (en) 1969-02-25
GB1165029A (en) 1969-09-24

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