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ES2149137B1 - Celula solar fotovoltaica de semiconductor de banda intermedia. - Google Patents

Celula solar fotovoltaica de semiconductor de banda intermedia.

Info

Publication number
ES2149137B1
ES2149137B1 ES009901278A ES9901278A ES2149137B1 ES 2149137 B1 ES2149137 B1 ES 2149137B1 ES 009901278 A ES009901278 A ES 009901278A ES 9901278 A ES9901278 A ES 9901278A ES 2149137 B1 ES2149137 B1 ES 2149137B1
Authority
ES
Spain
Prior art keywords
cell
band
absorbing
electron
intermediate band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
ES009901278A
Other languages
English (en)
Other versions
ES2149137A1 (es
Inventor
Lopez Antonio Luque
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universidad Politecnica de Madrid
Original Assignee
Consejo Superior de Investigaciones Cientificas CSIC
Universidad Politecnica de Madrid
Universidad Autonoma de Madrid
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consejo Superior de Investigaciones Cientificas CSIC, Universidad Politecnica de Madrid, Universidad Autonoma de Madrid filed Critical Consejo Superior de Investigaciones Cientificas CSIC
Priority to ES009901278A priority Critical patent/ES2149137B1/es
Priority to EP00936909A priority patent/EP1130657A2/en
Priority to US09/762,438 priority patent/US6444897B1/en
Priority to PCT/ES2000/000209 priority patent/WO2000077829A2/es
Publication of ES2149137A1 publication Critical patent/ES2149137A1/es
Application granted granted Critical
Publication of ES2149137B1 publication Critical patent/ES2149137B1/es
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

Célula solar conteniendo un semiconductor (1) con una banda intermedia (2) medio llena de electrones situado entre dos capas de semiconductores ordinarios de tipo n (3) y de tipo p (4). Al iluminarlo se crean pares electrón-hueco, ya sea por absorción de un fotón de la energía necesaria (5) o por la absorción de dos (6,7) de energía inferior que bombean un electrón desde la banda de valencia a la banda intermedia (8) y desde ella a la banda de conducción (9). Se establece una corriente eléctrica que sale por el lado p y vuelve por el lado n. Las capas n y p evitan también que la banda intermedia esté en contacto con las conexiones metálicas externas, lo que produciría un cortocircuito. Esta célula convierte la energía solar en electricidad más eficientemente que las células convencionales y contribuye a la mejora de los dispositivos fotovoltaicos.
ES009901278A 1999-06-09 1999-06-09 Celula solar fotovoltaica de semiconductor de banda intermedia. Expired - Fee Related ES2149137B1 (es)

Priority Applications (4)

Application Number Priority Date Filing Date Title
ES009901278A ES2149137B1 (es) 1999-06-09 1999-06-09 Celula solar fotovoltaica de semiconductor de banda intermedia.
EP00936909A EP1130657A2 (en) 1999-06-09 2000-06-09 Intermediate band semiconductor photovoltaic solar cell
US09/762,438 US6444897B1 (en) 1999-06-09 2000-06-09 Intermediate band semiconductor photovoltaic solar cell
PCT/ES2000/000209 WO2000077829A2 (es) 1999-06-09 2000-06-09 Celula solar fotovoltaica de semiconductor de banda intermedia

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES009901278A ES2149137B1 (es) 1999-06-09 1999-06-09 Celula solar fotovoltaica de semiconductor de banda intermedia.

Publications (2)

Publication Number Publication Date
ES2149137A1 ES2149137A1 (es) 2001-01-01
ES2149137B1 true ES2149137B1 (es) 2001-11-16

Family

ID=8308772

Family Applications (1)

Application Number Title Priority Date Filing Date
ES009901278A Expired - Fee Related ES2149137B1 (es) 1999-06-09 1999-06-09 Celula solar fotovoltaica de semiconductor de banda intermedia.

Country Status (4)

Country Link
US (1) US6444897B1 (es)
EP (1) EP1130657A2 (es)
ES (1) ES2149137B1 (es)
WO (1) WO2000077829A2 (es)

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JP3753605B2 (ja) * 2000-11-01 2006-03-08 シャープ株式会社 太陽電池およびその製造方法
DE10139509A1 (de) * 2000-12-08 2002-06-27 Daimler Chrysler Ag Silizium Germanium Solarzelle mit hohem Wirkungsgrad
US6819845B2 (en) 2001-08-02 2004-11-16 Ultradots, Inc. Optical devices with engineered nonlinear nanocomposite materials
US6710366B1 (en) 2001-08-02 2004-03-23 Ultradots, Inc. Nanocomposite materials with engineered properties
US20030066998A1 (en) 2001-08-02 2003-04-10 Lee Howard Wing Hoon Quantum dots of Group IV semiconductor materials
US7005669B1 (en) 2001-08-02 2006-02-28 Ultradots, Inc. Quantum dots, nanocomposite materials with quantum dots, devices with quantum dots, and related fabrication methods
US6794265B2 (en) * 2001-08-02 2004-09-21 Ultradots, Inc. Methods of forming quantum dots of Group IV semiconductor materials
KR100940530B1 (ko) * 2003-01-17 2010-02-10 삼성전자주식회사 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치
DE10345736A1 (de) * 2003-10-01 2005-05-04 Wulf Naegel Photovoltaikelement
US9018515B2 (en) 2004-01-20 2015-04-28 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
WO2005069387A1 (en) * 2004-01-20 2005-07-28 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
US7880255B2 (en) * 2004-07-19 2011-02-01 Micron Technology, Inc. Pixel cell having a grated interface
US7514725B2 (en) * 2004-11-30 2009-04-07 Spire Corporation Nanophotovoltaic devices
US7306963B2 (en) * 2004-11-30 2007-12-11 Spire Corporation Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices
US7790574B2 (en) 2004-12-20 2010-09-07 Georgia Tech Research Corporation Boron diffusion in silicon devices
ES2297972A1 (es) * 2005-05-30 2008-05-01 Universidad Politecnica De Madrid Fotodetector de infrarrojos de banda intermedia y puntos cuanticos.
US20070012355A1 (en) * 2005-07-12 2007-01-18 Locascio Michael Nanostructured material comprising semiconductor nanocrystal complexes for use in solar cell and method of making a solar cell comprising nanostructured material
US7750425B2 (en) * 2005-12-16 2010-07-06 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
AU2007322360B2 (en) 2006-02-27 2013-03-28 Los Alamos National Security, Llc Optoelectronic devices utilizing materials having enhanced electronic transitions
US20080121271A1 (en) * 2006-05-03 2008-05-29 Rochester Institute Of Technology Multi-junction, photovoltaic devices with nanostructured spectral enhancements and methods thereof
WO2008011152A2 (en) * 2006-07-21 2008-01-24 University Of Massachusetts Longwave infrared photodetector
EP2109900A1 (en) * 2007-01-08 2009-10-21 Plextronics, Inc. Quantum dot photovoltaic device
ES2277800B2 (es) * 2007-02-16 2009-02-16 Universidad Politecnica De Madrid Dispositivo para acoplar la luz de forma optima a una celula solar de banda intermedia realizada mediante puntos cuanticos.
US20100006143A1 (en) * 2007-04-26 2010-01-14 Welser Roger E Solar Cell Devices
DE102007043215A1 (de) * 2007-09-11 2009-03-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaische Anordnung mit optisch aktiver Glaskeramik
ES2293862B2 (es) 2007-10-17 2009-02-16 Universidad Politecnica De Madrid Celula solar de banda intermedia de puntos cuanticos con acoplamiento optimo de la luz por difraccion.
ES2302663B2 (es) * 2008-02-28 2009-02-16 Universidad Politecnica De Madrid Procedimiento para la obtencion de peliculas de materiales semiconductores incorporando una banda intermedia.
ES2311431B2 (es) * 2008-06-06 2009-07-21 Universidad Politecnica De Madrid Procedimiento de fabricacion de dispositivos optoelectronicos de banda intermedia basados en tecnologia de lamina delgada.
US8927852B2 (en) 2008-08-21 2015-01-06 Seagate Technology Llc Photovoltaic device with an up-converting quantum dot layer and absorber
EP2166577A1 (en) * 2008-09-23 2010-03-24 Advanced Surface Technology B.V. Solar cell and method of manufacturing a solar cell
ES2324013A1 (es) * 2009-02-19 2009-07-28 Universidad Politecnica De Madrid Metodo para la fabricacion de una celula solar de silicio de banda intermedia.
JP5554772B2 (ja) * 2009-02-26 2014-07-23 シャープ株式会社 薄膜化合物太陽電池の製造方法
GB0917747D0 (en) 2009-10-09 2009-11-25 Univ Glasgow Intermediate band semiconductor photovoltaic devices, uses thereof and methods for their manufacture
GB201016489D0 (en) 2010-09-30 2010-11-17 Imp Innovations Ltd Improved devices and methods for absorbing light
TWI418969B (zh) * 2010-12-01 2013-12-11 Ind Tech Res Inst 自驅動型熱電電耗偵測裝置及方法
ES2438466B2 (es) * 2010-12-03 2014-05-21 Universidad Complutense De Madrid Metodo para la fabricacion de una celula solar lateral de banda intermedia
KR101918737B1 (ko) * 2012-03-19 2019-02-08 엘지전자 주식회사 태양 전지
US8952478B2 (en) * 2013-04-24 2015-02-10 Infineon Technologies Austria Ag Radiation conversion device and method of manufacturing a radiation conversion device
US10428100B2 (en) 2017-01-13 2019-10-01 Uchicago Argonne, Llc Substituted lead halide perovskite intermediate band absorbers
ES2810599B2 (es) * 2019-09-06 2021-12-15 Univ Madrid Autonoma Dispositivo semiconductor
PL245553B1 (pl) * 2022-12-30 2024-08-26 Lubelska Polt Sposób wytwarzania krzemowego ogniwa fotowoltaicznego z dodatkowym poziomem energetycznym w paśmie zabronionym

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US4688068A (en) * 1983-07-08 1987-08-18 The United States Of America As Represented By The Department Of Energy Quantum well multijunction photovoltaic cell
JPS62128182A (ja) * 1985-11-28 1987-06-10 Mitsubishi Electric Corp 太陽電池
EP0535293A1 (en) * 1991-01-29 1993-04-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. A method of fabricating a compositional semiconductor device
GB9122197D0 (en) * 1991-10-18 1991-11-27 Imperial College A concentrator solar cell
JPH06163962A (ja) * 1992-11-26 1994-06-10 Sumitomo Electric Ind Ltd 太陽電池
JP2615404B2 (ja) * 1993-04-16 1997-05-28 工業技術院長 太陽電池
EP1653524A1 (en) * 1995-11-06 2006-05-03 Nichia Corporation Nitride semiconductor device
US5851310A (en) * 1995-12-06 1998-12-22 University Of Houston Strained quantum well photovoltaic energy converter
JP3877348B2 (ja) * 1996-02-28 2007-02-07 沖電気工業株式会社 太陽電池

Also Published As

Publication number Publication date
ES2149137A1 (es) 2001-01-01
EP1130657A2 (en) 2001-09-05
WO2000077829A2 (es) 2000-12-21
US6444897B1 (en) 2002-09-03
WO2000077829A3 (es) 2001-04-12

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