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ES2095370T3 - Circuito amplificador con transistores bipolares y de efecto de campo. - Google Patents

Circuito amplificador con transistores bipolares y de efecto de campo.

Info

Publication number
ES2095370T3
ES2095370T3 ES92114207T ES92114207T ES2095370T3 ES 2095370 T3 ES2095370 T3 ES 2095370T3 ES 92114207 T ES92114207 T ES 92114207T ES 92114207 T ES92114207 T ES 92114207T ES 2095370 T3 ES2095370 T3 ES 2095370T3
Authority
ES
Spain
Prior art keywords
amplifier circuit
bipolar
field effect
effect transistors
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92114207T
Other languages
English (en)
Inventor
Jurgen Schnabel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent NV
Original Assignee
Alcatel NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel NV filed Critical Alcatel NV
Application granted granted Critical
Publication of ES2095370T3 publication Critical patent/ES2095370T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
    • H03F3/505—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower with field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)

Abstract

EN UN CIRCUITO DE AMPLIFICACION (1) CON UNA ETAPA DE ENTRADA (2), AL MENOS CON UNA ETAPA INTERMEDIA (3) Y UNA ETAPA FINAL (4), SE UTILIZAN EN AL MENOS UNA ETAPA INTERMEDIA (3) TRANSISTORES (5, 6) BASADOS EN LA TECNOLOGIA MOSFET, Y EN LAS OTRAS ETAPAS TRANSISTORES BASADOS EN LA TECNOLOGIA BIPOLAR. ES ALCANZABLE UN GRADO MUY ALTO DE AMPLIFICACION CON UN MINIMO DE TENSION OFFSET Y UN MINIMO DE RUIDO.
ES92114207T 1991-09-27 1992-08-20 Circuito amplificador con transistores bipolares y de efecto de campo. Expired - Lifetime ES2095370T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4132219A DE4132219A1 (de) 1991-09-27 1991-09-27 Verstaerkerschaltung mit bipolar- und feldeffekt-transistoren

Publications (1)

Publication Number Publication Date
ES2095370T3 true ES2095370T3 (es) 1997-02-16

Family

ID=6441631

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92114207T Expired - Lifetime ES2095370T3 (es) 1991-09-27 1992-08-20 Circuito amplificador con transistores bipolares y de efecto de campo.

Country Status (5)

Country Link
US (1) US5268650A (es)
EP (1) EP0534134B1 (es)
AT (1) ATE144358T1 (es)
DE (2) DE4132219A1 (es)
ES (1) ES2095370T3 (es)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614424A (en) * 1996-01-16 1997-03-25 Taiwan Semiconductor Manufacturing Company Ltd. Method for fabricating an accumulated-base bipolar junction transistor
US5994177A (en) * 1999-02-05 1999-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Dynamic threshold MOSFET using accumulated base BJT level shifter for low voltage sub-quarter micron transistor
US8546884B2 (en) * 2002-10-29 2013-10-01 Avago Technologies General Ip (Singapore) Pte. Ltd. High value resistors in gallium arsenide

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128251A (en) * 1977-04-15 1978-11-09 Hitachi Ltd Source follwoer circuit
US4728903A (en) * 1986-05-02 1988-03-01 Reiffin Martin G Class A high-fidelity amplifier
GB2219162B (en) * 1988-05-28 1992-06-10 Stc Plc Amplifier circuit
US5012134A (en) * 1990-03-02 1991-04-30 Hewlett-Packard Company DC bootstrapped unity gain buffer

Also Published As

Publication number Publication date
EP0534134B1 (de) 1996-10-16
ATE144358T1 (de) 1996-11-15
DE4132219A1 (de) 1993-04-01
DE59207376D1 (de) 1996-11-21
US5268650A (en) 1993-12-07
EP0534134A1 (de) 1993-03-31

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