ES2077496B1 - MANUFACTURING SYSTEM FOR RADIATION MICRODETECTORS BASED ON HGI2. - Google Patents
MANUFACTURING SYSTEM FOR RADIATION MICRODETECTORS BASED ON HGI2.Info
- Publication number
- ES2077496B1 ES2077496B1 ES09300844A ES9300844A ES2077496B1 ES 2077496 B1 ES2077496 B1 ES 2077496B1 ES 09300844 A ES09300844 A ES 09300844A ES 9300844 A ES9300844 A ES 9300844A ES 2077496 B1 ES2077496 B1 ES 2077496B1
- Authority
- ES
- Spain
- Prior art keywords
- radiation
- microdetectors
- hgi2
- manufacturing system
- monocrystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Measurement Of Radiation (AREA)
Abstract
SISTEMA DE FABRICACION DE MICRODETECTORES DE RADIACION BASADOS EN HGI2. LA PRESENTE INVENCION SE REFIERE AL METODO DE CRECIMIENTO DE MONOCRISTALES DE HGI2 Y EN LAMINAS A SU POSTERIOR PREPARACION EN GEOMETRIA PARA FABRICAR MICRODETECTORES DE RADIACION DE ALTAS PRESTACIONES. ESTOS DETECTORES TIENEN GRAN EFICIENCIA FRENTE A RADIACION X Y GAMMA, PUDIENDO SER UTILIZADOS A TEMPERATURA AMBIENTE CON UNA GRAN SENSIBILIDAD, CARACTERIZADA POR UN LIMITE INFERIOR DE DETECCION DE 2 KEV. SU REDUCIDO TAMAÑO HACE QUE TENGAN UN CAMPO DE APLICABILIDAD POTENCIALMENTE MUY ALTO (MEDICINA NUCLEAR, MONITORAJE DE INSTALACIONES RADIACTIVAS, INVESTIGACION,...)MANUFACTURING SYSTEM FOR RADIATION MICRODETECTORS BASED ON HGI2. THE PRESENT INVENTION REFERS TO THE METHOD OF GROWTH OF HGI2 MONOCRYSTALS AND IN SHEETS TO ITS PREPARATION IN GEOMETRY TO MANUFACTURE HIGH PERFORMANCE RADIATION MICRODETECTORS. THESE DETECTORS HAVE GREAT EFFICIENCY AGAINST RADIATION X AND GAMMA, MAY BE USED AT ROOM TEMPERATURE WITH A HIGH SENSITIVITY, CHARACTERIZED BY A LOWER LIMIT OF DETECTION OF 2 KEV. THEIR REDUCED SIZE MAKES THEM HAVE A POTENTIALLY VERY HIGH FIELD OF APPLICABILITY (NUCLEAR MEDICINE, MONITORING OF RADIOACTIVE FACILITIES, INVESTIGATION, ...)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES09300844A ES2077496B1 (en) | 1993-04-22 | 1993-04-22 | MANUFACTURING SYSTEM FOR RADIATION MICRODETECTORS BASED ON HGI2. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES09300844A ES2077496B1 (en) | 1993-04-22 | 1993-04-22 | MANUFACTURING SYSTEM FOR RADIATION MICRODETECTORS BASED ON HGI2. |
Publications (3)
Publication Number | Publication Date |
---|---|
ES2077496A2 ES2077496A2 (en) | 1995-11-16 |
ES2077496R ES2077496R (en) | 1997-05-01 |
ES2077496B1 true ES2077496B1 (en) | 1998-01-01 |
Family
ID=8281552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES09300844A Expired - Fee Related ES2077496B1 (en) | 1993-04-22 | 1993-04-22 | MANUFACTURING SYSTEM FOR RADIATION MICRODETECTORS BASED ON HGI2. |
Country Status (1)
Country | Link |
---|---|
ES (1) | ES2077496B1 (en) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2278162A1 (en) * | 1974-07-11 | 1976-02-06 | France Etat | MINIATURIZED INDIVIDUAL DEVICE FOR INSTANT IRRADIATION CONTROL |
CA1060762A (en) * | 1975-07-01 | 1979-08-21 | Wayne F. Schnepple | Method and apparatus for growing hg12 crystals |
US4030964A (en) * | 1976-04-29 | 1977-06-21 | The United States Of America As Represented By The United States Energy Research And Development Administration | Temperature cycling vapor deposition HgI2 crystal growth |
US4282057A (en) * | 1980-02-27 | 1981-08-04 | Purdue Research Foundation | Vapor growth of mercury iodide for use as high energy detectors |
-
1993
- 1993-04-22 ES ES09300844A patent/ES2077496B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
ES2077496R (en) | 1997-05-01 |
ES2077496A2 (en) | 1995-11-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EC2A | Search report published |
Date of ref document: 19951116 Kind code of ref document: R Effective date: 19951116 |
|
FD1A | Patent lapsed |
Effective date: 20020401 |