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ES2075146T3 - Procedimiento de descomposicion inducida por plasma de silil-ciclobutanos para formar recubrimientos continuos de carburo de silicio amorfo. - Google Patents

Procedimiento de descomposicion inducida por plasma de silil-ciclobutanos para formar recubrimientos continuos de carburo de silicio amorfo.

Info

Publication number
ES2075146T3
ES2075146T3 ES90303378T ES90303378T ES2075146T3 ES 2075146 T3 ES2075146 T3 ES 2075146T3 ES 90303378 T ES90303378 T ES 90303378T ES 90303378 T ES90303378 T ES 90303378T ES 2075146 T3 ES2075146 T3 ES 2075146T3
Authority
ES
Spain
Prior art keywords
cyclobutane
silil
plasma
silicon carbide
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES90303378T
Other languages
English (en)
Inventor
Kenneth George Sharp
Leo Tarhay
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Application granted granted Critical
Publication of ES2075146T3 publication Critical patent/ES2075146T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

METODO PARA FORMAR UN RECUBRIMIENTO CONTINUO DE CARBURO AMORFO DE SILICONA PARA LAS SUPERFICIES DE ARTICULOS, MEDIANTE LA DEPOSICION DE VAPOR QUIMICO DE PLASMA MEJORADO. EN EL METODO, EL VAPOR QUIMICO COMPRENDE UN CICLOBUTANO CONTENIENDO SILICONA, TAL COMO UN SILACICLOBUTANO O UN 1,3-DISILACICLOBUTANO. LOS RECUBRIMIENTOS FORMADOS CON ESTE METODO SON UTILES PARA APLICARLOS A LAS CELULAS SOLARES, PARA PREVENIR LA CORROSION DE LOS ELEMENTOS ELECTRONICOS, PARA FORMAR SUTRATOS DIELECTRICOS INTERMEDIOS ENTRE LOS SUSTRATOS DE METALIZACION DE LOS ELEMENTOS ELECTRONICOS, Y PARA HACER QUE LAS SUPERFICIES SEAN RESISTENTES A LA ABRASION.
ES90303378T 1989-04-12 1990-03-29 Procedimiento de descomposicion inducida por plasma de silil-ciclobutanos para formar recubrimientos continuos de carburo de silicio amorfo. Expired - Lifetime ES2075146T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/336,927 US5011706A (en) 1989-04-12 1989-04-12 Method of forming coatings containing amorphous silicon carbide

Publications (1)

Publication Number Publication Date
ES2075146T3 true ES2075146T3 (es) 1995-10-01

Family

ID=23318313

Family Applications (1)

Application Number Title Priority Date Filing Date
ES90303378T Expired - Lifetime ES2075146T3 (es) 1989-04-12 1990-03-29 Procedimiento de descomposicion inducida por plasma de silil-ciclobutanos para formar recubrimientos continuos de carburo de silicio amorfo.

Country Status (8)

Country Link
US (1) US5011706A (es)
EP (1) EP0392703B1 (es)
JP (1) JPH0781186B2 (es)
KR (1) KR950007667B1 (es)
AU (1) AU632107B2 (es)
CA (1) CA2013478C (es)
DE (1) DE69020221T2 (es)
ES (1) ES2075146T3 (es)

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US6838393B2 (en) * 2001-12-14 2005-01-04 Applied Materials, Inc. Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide
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US7091137B2 (en) * 2001-12-14 2006-08-15 Applied Materials Bi-layer approach for a hermetic low dielectric constant layer for barrier applications
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CN115992345A (zh) * 2017-09-14 2023-04-21 弗萨姆材料美国有限责任公司 用于沉积含硅膜的组合物和方法
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JP7420473B2 (ja) * 2019-02-01 2024-01-23 一般財団法人ファインセラミックスセンター ガス分離材およびその製造方法
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CN116344630A (zh) * 2021-12-24 2023-06-27 西安隆基乐叶光伏科技有限公司 一种太阳能电池的窗口层、太阳能电池及其制备方法

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Also Published As

Publication number Publication date
DE69020221T2 (de) 1996-02-08
CA2013478A1 (en) 1990-10-12
EP0392703A3 (en) 1991-03-13
EP0392703A2 (en) 1990-10-17
DE69020221D1 (de) 1995-07-27
KR950007667B1 (ko) 1995-07-14
AU5310990A (en) 1990-10-18
KR900015806A (ko) 1990-11-10
AU632107B2 (en) 1992-12-17
JPH0781186B2 (ja) 1995-08-30
EP0392703B1 (en) 1995-06-21
US5011706A (en) 1991-04-30
JPH03115573A (ja) 1991-05-16
CA2013478C (en) 1994-08-23

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