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ES2044281T3 - Circuito de transistor integrable monoliticamente para la limitacion de sobretensiones negativas. - Google Patents

Circuito de transistor integrable monoliticamente para la limitacion de sobretensiones negativas.

Info

Publication number
ES2044281T3
ES2044281T3 ES90104734T ES90104734T ES2044281T3 ES 2044281 T3 ES2044281 T3 ES 2044281T3 ES 90104734 T ES90104734 T ES 90104734T ES 90104734 T ES90104734 T ES 90104734T ES 2044281 T3 ES2044281 T3 ES 2044281T3
Authority
ES
Spain
Prior art keywords
limitation
transistor circuit
negative overvoltages
monolithically integrable
overvoltages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES90104734T
Other languages
English (en)
Inventor
Andreas Dipl-Ing Dietze
Hans Kriedt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Application granted granted Critical
Publication of ES2044281T3 publication Critical patent/ES2044281T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Amplifiers (AREA)

Abstract

SE DESCRIBE UN CIRCUITO MONOLITICO TRANSISTORIZADO INTEGRABLE PARA LA PROTECCION DE UN INTERRUPTOR ELECTRICO CONTRA SOBRETENSIONES NEGATIVAS TRANSITORIAS EN EL QUE EL EMISOR DE UN TRANSISTOR NPN SE CONECTA CON EL CONDUCTOR A PROTEGER, EN EL QUE EL COLECTOR DE ESTE TRANSISTOR NPN SE CONECTA CON EL POTENCIAL DE ALIMENTACION POSITIVO Y EN EL QUE LA BASE DEL TRANSISTOR PNP SE CONECTA CON EL ANODO DE UN DIODO, CUYO CATODO ESTA CONECTADO CON UN POTENCIAL DE REFERENCIA.
ES90104734T 1989-03-16 1990-03-13 Circuito de transistor integrable monoliticamente para la limitacion de sobretensiones negativas. Expired - Lifetime ES2044281T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP89104712 1989-03-16

Publications (1)

Publication Number Publication Date
ES2044281T3 true ES2044281T3 (es) 1994-01-01

Family

ID=8201094

Family Applications (1)

Application Number Title Priority Date Filing Date
ES90104734T Expired - Lifetime ES2044281T3 (es) 1989-03-16 1990-03-13 Circuito de transistor integrable monoliticamente para la limitacion de sobretensiones negativas.

Country Status (6)

Country Link
EP (1) EP0387798B1 (es)
JP (1) JPH02280622A (es)
DE (1) DE59002872D1 (es)
ES (1) ES2044281T3 (es)
FI (1) FI901305A0 (es)
PT (1) PT93453A (es)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0903828A1 (en) * 1997-09-23 1999-03-24 STMicroelectronics S.r.l. Improved device for the protection of an integrated circuit against electrostatic discharges

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2654419C2 (de) * 1976-12-01 1983-06-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Schaltungsanordnung zur Spannungsbegrenzung
US4302792A (en) * 1980-06-26 1981-11-24 Rca Corporation Transistor protection circuit
DE3301800A1 (de) * 1983-01-20 1984-08-23 Siemens AG, 1000 Berlin und 8000 München Integrierbare schutzschaltung

Also Published As

Publication number Publication date
DE59002872D1 (de) 1993-11-04
EP0387798B1 (de) 1993-09-29
FI901305A0 (fi) 1990-03-15
PT93453A (pt) 1990-11-07
JPH02280622A (ja) 1990-11-16
EP0387798A1 (de) 1990-09-19

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