EP4147461A1 - Mems for interacting with a volumetric flow in a highly efficient manner - Google Patents

Abstract

The invention relates to a MEMS with a layer structure, comprising a cavity which is provided in the layer structure and which is fluidically coupled to the outer surroundings of the layer structure by at least one opening in the layer structure. The MEMS comprises an interaction structure which is arranged on a first MEMS plane and in the cavity such that it can move along a plane direction and which is designed to interact with a fluid in the cavity, a movement of the interaction structure being causally dependent on a movement of the fluid through the at least one opening. The MEMS additionally comprises an active structure which is arranged on a second MEMS plane arranged perpendicularly to the plane direction and which is mechanically coupled to the interaction structure and is configured such that an electrical signal at an electrical contact of the active structure is causally dependent on a deformation of the active structure, wherein the deformation of the active structure is causally dependent on the movement of the fluid.

Description

MEMS for highly efficient interaction with a volume flow

description

The present invention relates to microelectromechanical systems (MEMS) in which a movably arranged interaction structure for interacting with a fluid and an active structure in which an electrical signal is causally related to a deformation of the active structure, which in turn is causally related to the movement of the fluid related, are arranged in different MEMS levels. The present invention also relates to MEMS with a movably arranged layer arrangement which comprises a first, second and third bar fixed in an electrically insulated manner on discrete areas, the discrete areas between the bars being arranged offset from one another. The present invention also relates to a MEMS converter for interacting with a volume flow of a fluid, for example a MEMS loudspeaker, a MEMS microphone or a MEMS pump.

The principle of the NED (Nanoscopic Electrostatic Drive, nanoscopic electrostatic drive) is described in WO 2012/095185 A1. NED is a new kind of MEMS actuator principle (MEMS = microelectromechanical system). Here, a movable element is formed from a silicon material, which element has at least two electrodes that are spaced apart from one another. The length of the electrodes is very much greater than the thickness of the electrodes and also the height of the electrodes, that is, the dimension along the depth direction of the silicon material. These bar-shaped electrodes are spaced apart from one another and electrically isolated and fixed locally from one another. By applying an electrical potential, an electrical field is generated between these electrodes, which results in forces of attraction or repulsion between the electrodes and thus tensions in the material of the electrodes. The material strives to homogenize these stresses by trying to assume a possible low-stress state, which results in movement. A certain geometry and topography of the electrodes can influence this movement in such a way that the length of the electrodes changes and the deflectable element moves laterally. In JP-H5252760 A, an actuator is shown, which consists of many small cylindrical or wave-like drive units, which consist of two wave-like shaped and insulated electrodes. Both ends of the insulated electrodes are connected to one another, the drive unit having a narrow gap for deformations caused by electrostatic forces. The movement of such actuators is, however, linked to geometrical framework conditions. For example, the deformation of the actuator stops when the electrostatic force is in equilibrium with the rigidity of the structure. It is also disadvantageous that the resulting actuators are a composite material of metallic electrode materials and polymeric insulators. As a result, inexpensive production in CMOS technology (CMOS = Complementary Metal Oxide Semiconductor) is not possible, which represents a considerable competitive disadvantage.

For the integration of MEMS components in devices and systems, it is desirable to design MEMS that are designed for interaction with a fluid to be space-efficient, which means that a high level of sensitivity is obtained for fluid movements and / or that large amounts of fluid are moved which leads, for example, to high sound pressures.

The object of the present invention is therefore to create a space-efficient MEMS.

This object is achieved by the subject matter of the independent claims.

According to a first aspect, it was recognized that by arranging an interaction structure for interacting with a fluid in a first MEMS level and by arranging an active structure mechanically coupled to the interaction structure in a second MEMS level, a high efficiency of a MEMS can be obtained, since a respective sub-task, interacting with the fluid and generating / processing an electrical signal, can take place primarily in the respective MEMS level, so that there can be concentrated on the respective sub-task.

According to a second aspect, it was recognized that by offsetting discrete areas in which a sequence of at least three bar electrodes is electrically insulated from one another, in such a way that a first outer electrode with a central electrode is fixed in an electrically insulated manner at other locations than a second outer one Electrode with the middle electrode a highly efficient deflection of the movable layer structure can be obtained by an applied electrical signal or by an acting fluid.

Both concepts can be combined with one another, but can also be implemented independently of one another.

According to an exemplary embodiment of the first aspect, a MEMS has a layer structure. A cavity is arranged in the layer structure and is fluidically coupled to an external environment of the layer structure through at least one opening in the layer structure. An interaction structure is arranged in a first MEMS plane and in the cavity, which is arranged along a plane direction, i. i.e., in-plane, is movable. The interaction structure is designed to interact with a fluid in the cavity, a movement of the interaction structure being causally related to a movement of the fluid through the at least one opening. In a second MEMS plane arranged perpendicular to the plane direction, an active structure is arranged which is mechanically coupled to the interaction structure and which is configured so that an electrical signal at an electrical contact of the active structure is causally related to a deformation of the active structure . The deformation of the active structure is in turn causally related to the movement of the fluid.

According to an exemplary embodiment of the second aspect, a MEMS has a layer structure and a cavity arranged in the layer structure. A movable layer arrangement is provided in the cavity, which has a first bar, a second bar and a third bar arranged between the first bar and the second bar and arranged electrically insulated from the same in discrete areas. The movable layer arrangement is designed to perform a movement along a direction of movement in a substrate plane in response to an electrical potential between the first beam and the third beam or in response to an electrical potential between the second beam and the third beam, that is, in one plane direction. The discrete areas for fixing the first beam and the third beam on the one hand and the second beam and the third beam on the other hand are arranged offset to one another along an axial course of the movable layer arrangement.

Further exemplary embodiments are defined in the dependent claims. Preferred exemplary embodiments of the present invention are explained below with reference to the accompanying drawings. Show it:

1 shows a schematic perspective view of a MEMS according to an exemplary embodiment of the first aspect;

2 shows a schematic perspective view of a MEMS in accordance with an exemplary embodiment of the first aspect;

3a shows a schematic plan view of part of an active structure of a MEMS in accordance with an exemplary embodiment of the first aspect;

3b shows a schematic view of part of an active structure in accordance with an exemplary embodiment of the first aspect, in which insulation layers are additionally provided;

3c shows a schematic plan view of part of an active structure in accordance with a further exemplary embodiment which continues the configuration of FIG. 3a;

3d shows a schematic plan view of part of an active structure in accordance with an exemplary embodiment of the first aspect, in which a shape of the insulation layer is adapted to an electrode shape;

3e shows a scanning electron microscope image and a schematic plan view of part of the active structure in accordance with an exemplary embodiment of the first aspect;

4a shows a schematic plan view of an interaction structure according to an exemplary embodiment of the first aspect;

FIG. 4b shows a schematic perspective view of the interaction structure from FIG. 4a; FIG.

5a shows a schematic plan view of a further active structure of a MEMS according to an exemplary embodiment of the first aspect; FIG. 5b shows a schematic plan view of a movable layer arrangement, as it can be used, for example, in the MEMS of FIG. 5a, according to an exemplary embodiment of the first aspect; FIG.

6a shows a schematic perspective view of part of a further MEMS in accordance with an exemplary embodiment of the first aspect;

FIG. 6b shows a schematic perspective illustration of a section from FIG. 6a; FIG.

7a shows a schematic plan view of the interaction structure of the MEMS from FIG. 2 in accordance with an exemplary embodiment of the first aspect;

FIG. 7b shows a schematic plan view of the interaction structure from FIG. 7a, which is deflected along the positive y-direction; FIG.

FIG. 7c shows a schematic plan view of the interaction structure from FIG. 7a, which, compared to FIG. 7b, is deflected along the opposite negative y-direction;

7d-7f show schematic views of the interaction structure from FIG. 7a, groups of openings of the cavity according to an exemplary embodiment of the first aspect additionally being shown;

7g shows a schematic view of an alternative embodiment of openings according to an embodiment of the first aspect;

8a-c show schematic perspective top views of the MEMS from FIG. 2 in a plane of the active structure and according to an exemplary embodiment of the first aspect;

9a shows a schematic plan view of a further interaction structure according to an exemplary embodiment of the first aspect;

FIG. 9b shows a schematic perspective view of the interaction structure from FIG. 9a; FIG. 9c shows a schematic perspective view of a detail from FIGS. 9a and 9b;

FIG. 9d shows a more detailed schematic plan view of part of the interaction structure from FIG. 9a; FIG.

10a shows an exemplary top view of an active structure of a MEMS in accordance with an exemplary embodiment of the first aspect, which includes partial actuators;

FIG. 10b shows an enlarged illustration of a detail from FIG. 10a; FIG.

FIG. 10c shows a schematic plan view of the part from FIG. 10b, in which on the basis of FIG

Actuation of the actuator parts, an opposing deformation of elements takes place;

11 shows, in a simplified plan view, an electrical coupling of the MEMS from FIGS. 10a-c according to an exemplary embodiment of the first aspect;

12a shows a schematic plan view of part of an active structure in a first state according to an exemplary embodiment of the first aspect;

FIG. 12b shows a state of the active structure that is complementary to FIG. 12a; FIG.

12c-d schematic top views of exemplary embodiments of the active structure of the MEMS, in which comb electrodes facing the stationary electrodes are spatially separated from one another along the y-direction;

12e shows a schematic top view of the MEMS from FIGS. 12a-b, in which a first MEMS plane is shown in the foreground and a second MEMS plane is shown in the background and is partially covered by the first MEMS plane;

12f shows a schematic side sectional view of a MEMS according to an exemplary embodiment, in which the active structure and / or the interaction structure is mirrored symmetrically; 12g shows a schematic plan view of parts of a MEMS according to an exemplary embodiment in which, in a comb electrode structure, inner, movable cam electrodes are acted upon with an alternating potential and outer comb electrodes with different static potentials;

FIG. 12h shows a schematic side sectional view of the MEMS from FIG. 12g; FIG. 13a shows an exemplary plan view of a movable layer arrangement according to an exemplary embodiment of the second aspect;

13b shows a schematic plan view of a movable layer arrangement according to an exemplary embodiment of the second aspect, in which a plurality of N discrete areas between bars of the movable layer arrangement are arranged along the axial course parallel to the direction;

14a-f show schematic plan views of different configurations of active movable layer arrangements in accordance with exemplary embodiments of the second aspect;

Fig. 15 is a schematic view of a movable layer arrangement according to an embodiment of the second aspect, having at least one fourth beam;

16 shows a schematic plan view of a movable layer arrangement according to an exemplary embodiment, which has a discrete fixation at one end of the movable layer arrangement, according to an exemplary embodiment of the second aspect;

17 shows a schematic view of a movable layer arrangement according to a further exemplary embodiment of the second aspect; and

18a-b show schematic views of movable layer arrangements according to exemplary embodiments of the second aspect, in which the bars are arranged in sections in a curved manner with respect to one another. Before exemplary embodiments of the present invention are explained in more detail below with reference to the drawings, it is pointed out that identical, functionally identical or identically acting elements, objects and / or structures in the different figures are provided with the same reference symbols, so that in different exemplary embodiments The description of these elements shown is interchangeable or can be applied to one another.

Exemplary embodiments described below are described in connection with a large number of details. However, exemplary embodiments can also be implemented without these detailed features. Furthermore, for the sake of clarity, exemplary embodiments are described using block diagrams as a substitute for a detailed representation. Furthermore, details and / or features of individual exemplary embodiments can easily be combined with one another, as long as it is not explicitly described to the contrary.

The following exemplary embodiments relate to microelectromechanical systems (MEMS). Some of the MEMS described herein can be multilayered layer structures. Such MEMS can for example be done by processing semiconductor materials at the wafer level, which can also include a combination of several wafers or the deposition of layers at the wafer level. Some of the exemplary embodiments described herein deal with MEMS levels. A MEMS plane is understood to be a plane that is not necessarily two-dimensional or uncurved and extends essentially parallel to a processed wafer, for example parallel to a main side of the wafer or the later MEMS. A plane direction can be understood as a direction within this plane, which is also referred to by the English term “in plane”. A direction perpendicular to this, that is, perpendicular to a plane direction, can be referred to in simplified terms as the thickness direction, the term thickness not developing any limitation in the sense of an orientation of this direction in space. It goes without saying that terms used herein such as length, width, height, top, bottom, left, right and the like are only used to illustrate the exemplary embodiments described here, since their position in space can be changed as desired.

1 shows a schematic perspective view of a MEMS 10 according to an exemplary embodiment of the first aspect. The MEMS 10 comprises a layer structure 12 with two or more layers 12i, 12 ₂ and / or 123, a number of the layers being can be lovable and is at least 1. An exemplary number of layers is accordingly 1, 2, 3, at least 4, at least 5, at least 8 or more. The layers of the layer structure can include different materials and / or material combinations, in particular layers that are compatible with semiconductor processes, such as silicon, gallium arsenide or the like, wherein at least local doping can be implemented and / or additional materials can be arranged, for example conductive materials such as Metals. Alternatively or additionally, electrically insulating materials can also form at least parts of a layer, for example nitride and / or oxide materials.

Embodiments relate to providing different elements in different MEMS planes 14i and 14 ₂ , which are arranged, for example, parallel to an x / y plane. The planes 14i and 14 ₂ and the x / y plane can be arranged parallel to a main side of the wafer and thus define or describe in-plane planes. The x-direction, the y-direction and combinations thereof can be understood as a plane direction. A direction perpendicular to this, for example z, can be referred to as the thickness direction.

The planes 14i and 14 ₂ can be arranged offset to one another along the z-direction, it being irrelevant for this purpose whether the planes 14i and 14 ₂ are arranged in areas in which the layer structure 12 has a common layer 12i, 12 ₂ or 12 ₃ or in different layers 12i and 12 ₃ . The arrangement of different elements through different layers 12i and 12 ₃ with possibly different materials enables simple manufacturing processes, but it is also possible _{to shape different structures in different planes 14i and 14 2} , which consist of the same material or the same layer .

Bottom layers and cover layers, which can also limit a Ka vity 16 arranged in the layer structure 12, are not shown in FIG. 1. Instead, an opening 18 is shown in the layer structure 12, which fluidically couples an outer environment 22 of the layer structure 12 to the cavity 16, that is, there is a fluid flow from the outer environment 22 into the cavity 16 and / or from the cavity 16 towards the outer environment 22 possible. Additional structures, such as valves or filters, can be provided in the opening 18.

The fluidic coupling through the opening 18 can, for example, also be wholly or partially by omitting and / or opening the cover wafer / cover layer (not shown) and / or bottom wafer / bottom layer can be implemented, that is, the opening 18 can be arranged in a side wall structure, but can also be located elsewhere. Embodiments also provide a plurality of openings that can be located at different points of the layer structure 12, in particular in side wall structures and / o the top or bottom layers. A lateral delimitation of the cavity in-plane can be understood as a side wall structure.

An interaction structure 24 is arranged in the MEMS level 14i. The interaction structure 24 is designed to interact with a fluid arranged in the cavity 16, for example a gas or a liquid, in particular air. A movement of the interaction structure 24 is causally related to a movement of the fluid through the opening 18. This means that a movement of the interaction structure 24 can bring about a fluid flow through the opening 18 and / or that a fluid flow through the opening 18 can bring about a movement of the interaction structure 24, for example by the fluid coming into contact with or interacting with the interaction structure 24. Some exemplary embodiments enable the MEMS to be operated or implemented as a sensor in that a movement of the fluid leads to a movement of the interaction structure 24. Some exemplary embodiments enable the MEMS to be operated or implemented as an actuator in that an actively generated movement of the interaction structure 24 is transmitted to the fluid, such as can be used for loudspeakers, for example.

An active structure 26 is arranged in the MEMS level 14 _2. The active structure 26 is mechanically coupled to the interaction structure 24, that is to say fastened to one another with a mechanical connection. For this purpose, a mechanical coupling element 28 can be provided which at least partially provides the mechanical connection between the interaction structure 24 and the active structure 26. The mechanical coupling element 28 can provide a mechanically rigid connection, this being understood to mean that a certain elasticity in the sense of mechanical breaking strength can be quite desirable. However, too high elasticity can be avoided by means of the mechanical coupling element 28, which could lead to an undesired relative deflection between the interaction structure 24 and the active structure 26, which in the active operation of the MEMS 10 leads to a loss of force and / or in the sensory operation of the MEMS 10 Could mean loss of sensitivity. The active structure 26 is configured such that an electrical signal or potential 32 at an electrical contact of the active structure 26 is causally related to a deformation of the active structure 26. The deformation of the active structure 26 is in turn causally related to the movement of the fluid, for example in that the interaction structure 24 is driven by means of the active structure 24 in order to move the fluid or in that the fluid moves the interaction structure 24, which is detected by the active structure 26 can be. Applying the electrical signal 32 can, for example, lead to the active structure 26 and consequently the interaction structure 24 being driven. Tapping off or measuring the electrical signal 32 (which may include applying a reference potential) can be used to detect the movement of the interaction structure.

For example, in a sensor-based operation of the MEMS 10, the fluid can deflect the interaction structure 24. This deflection can be transmitted to the active structure 26 by means of the mechanical coupling element 28, so that it is also deflected. The deflection of the active structure 26 can for example be detectable and / or evaluable by means of the signal 32, for example by means of an integrated circuit (Application Specific Integrated Circuit, ASIC), a processor or microcontroller or other suitable devices.

In an actuator operation of the MEMS 10, the signal 32 can, for example, cause the active structure 26 to be deflected, this deflection being passed on to the interaction structure 24 by means of the mechanical coupling element 28 in order to bring about the movement of the fluid.

The interaction structure 24 and the active structure 26 are located in different MEMS levels 14i and 14 ₂ , in particular in levels different from one another. Embodiments provide that an extension of the interaction structure 24 into the plane 14 _{2 of} the active structure 26 and vice versa is avoided, so that a functional separation between the functional plane of the interaction structure 24 and the active structure 26 is provided. This enables a spatial separation of the two functionalities, namely the interaction with the fluid on the one hand and the arrangement of the active structure on the other. This spatial separation makes it possible to design both structures in a very space-efficient manner and thus to create an overall space-efficient MEMS. For example, but not necessarily, the active structure 26, the mechanical coupling element 28 and / or the interaction structure 24 are entirely or partially formed from a material of surrounding structures of the same respective layer 12i, 12 ₂ and / or 12 ₃ . For example, for the electrical insulation of the interaction structure 24 from the active structure 26, an intermediate layer 12 _{2 can be} provided which comprises electrically insulating materials, for example silicon oxide and / or silicon nitride. This also makes it possible to form the mechanical coupling element 28 from appropriate materials. It should be noted, however, that the mechanical coupling element 28 can have any materials as well as any geometric shape that is designed to mechanically couple the interaction structure 24 to the active structure 26.

The interaction structure 24 can be suspended and / or fastened or coupled to the active structure 26 by means of the mechanical coupling element 28 in the MEMS 10. Optionally, further support elements, for example spring elements or the like, can be provided which can support a movement of the interaction structure 24. While the mechanical coupling element 28 can enable a mechanical coupling between the interaction structure 24 and the active structure 26, optional additional support elements can enable the interaction structure 24 to be supported on a surrounding substrate.

Although the MEMS 10 is shown in such a way that the active structure 26 and the interaction structure 24 have approximately the same dimensions along the z-direction, the underlying concept makes it possible to design the interaction structure 24 along the z-direction much larger than the active one Structure 26. It can thus be achieved that the interaction with the fluid takes place predominantly, ie, at least 90%, at least 95% or at least 98% or even completely through the interaction structure 24, while the active structure 26 is functionally designed to accommodate the To generate movement of the interaction structure 24 and / or to sense and participate in the interaction with the fluid to a small extent or possibly not. The layer thicknesses of the interaction structure 24 and the active structure 26 can be adapted as desired to one another and / or to an intended use. For example, but not necessarily, the layer thickness of the interaction structure 24 can be greater than a layer thickness of the active structure 26. In exemplary configurations, the layer thickness of the interaction structure 24 perpendicular to the plane direction x or y is at least 1.1 times, at least 1.5 times -Fold, at least a 2-fold, at least a 5-fold, at least a 10-fold, at least a 15-fold or at least a 20-fold of a layer thickness of the active structure 26. This is these are preferred examples. Other MEMS in accordance with these aspects may have different layer thickness ratios.

The following exemplary embodiments are described in connection with an active configuration of MEMS in such a way that an actuator-based operation of the MEMS is implemented, for example as a loudspeaker. However, exemplary embodiments are not restricted to this, but also relate to using the respective MEMS as a sensor, which is possible in combination or as an alternative to an embodiment as an actuator.

In the case of a corresponding actuator-based operation, the active structure is formed such that it comprises an actuator structure which is designed to bring about a deformation of the active structure 26, the movement of the interaction structure 24 and the movement when the electrical signal 32 is applied to the connection of the fluid causes.

2 shows a schematic perspective view of a MEMS 20 according to an exemplary embodiment, in which the active structure 26 is arranged in a layer 12 ₃ and the interaction structure 24 is arranged in an adjacent layer 12 _{2 of} a layer stack of the layer structure 12, which also has a Has bottom layer 12i and a top layer 124. Openings 18i to 18e can be arranged in the bottom layer 12i. Alternatively or additionally, one or more openings 18 ₇ to 18 ₁₇ in the cover layer 12 _{4 can be} arranged.

The mechanical coupling between the active structure 26 and the interaction structure 24 can take place by means of coupling sub-elements 28a and 28b, for example comparatively rigid local areas in the interaction structure 24 and / or the active structure 26, which are mechanically firmly connected to one another. Parts of the interaction structure 24 can be set back in the negative z-direction with respect to a surface of the partial coupling element 28a facing the active structure 26 and / or parts of the active structure 26 can be set back in the positive z-direction with respect to the partial coupling element 28b or one of the interaction structure 24 be set back to the facing surface of the same, so that between the corresponding areas of the interaction structure 24 and the active structure 26 a distance or gap 34 can arise, which allows a relative movement of individual parts of the interaction structure 24 and the active structure 26 to each other. Alternatively or additionally, additional elements can also be arranged between the coupling part elements 28a and 28b, to get the gap 34. While, for example, parts of the active structure 26 can be movable or deformable, the interaction structure 24 can be made comparatively rigid or immovable. The corresponding relative movement between deformable parts of the active structure 26 and the elements of the interaction structure 24 in the event of a deflection or deformation of the active structure 26 can be improved by providing the gap 34. The gap 34 can be a cavity, but can also be filled, for example, by a mechanical structure, for example a separating layer, sliding layer or the like. This layer can be at least partially sealed fluidically, wherein, for example, movement spaces can be provided for a movement of the coupling part elements 28a and / or 28b.

This means that the coupling element 28 can mechanically firmly connect the active structure 26 to the interaction structure 24 and set a distance between the active structure and the interaction structure. The distance is or the gap measures along z at least 0.05 pm and at most 20 pm, at least 0.3 pm and at most 10 pm or at least 0.8 pm and at most 1.5 pm, preferably 1 pm. An electrically insulating material can be arranged in a region of the spacing, which means that the coupling element 28 can comprise electrically insulating material at least in regions. A mechanical rigidity of the coupling element can correspond to a mechanical rigidity of the active structure 26 and / or the resistance structure 24 along the planar direction or be lower than the mechanical rigidity of the active structure and / or the resistance structure.

While the MEMS 20 can for example provide a fluidic flow from the bottom layer 12i to the cover layer 12 or vice versa, if the MEMS 20 is designed without openings in the cover layer 12 ₄ , a fluid flow through the gap 34 can also be dispensed with. Further refinements provide for openings in the cover layer 12 ₄ to be connected, for example, to fluidic channels that run past the active structure 26.

The interaction structure 24 can be moved along one or more directions by the active structure 26. For example, actuation by means of the signal 32 can be used to expand or contract a part 26a or 26b of the active structure 26. With a removal of the signal 32 or a return to a reference potential, a mechanical rigidity of a material of the active structure 26 and / or Additional elements are used to move the active structure 26 and thus the interaction structure 24 back again. However, it is also possible to support or generate this opposite movement by means of a second electrical signal, so that, for example, compression of one of parts 26a and part 26b and expansion of the other part 26b or 26a along positive or negative y -Direction takes place. For example, a movement of the mechanical coupling element 28b in the negative y-direction can take place in a first time interval by means of compression of the part 26a and a movement of the coupling part element 28b in the positive y-direction in a subsequent time interval by means of compression of the part 26b of the active structure.

In FIG. 2, the MEMS 20 has the active structure 26 in such a way that two actuation devices 26a and 26b arranged opposite one another are provided, which are designed to execute a movement along an actuation direction (for example -y) based on a first actuation signal and around to provide a complementary movement (for example + y) opposite to the first actuation direction based on a further actuation signal. This can be used to create a kind of to-and-fro movement along an axis. Further exemplary embodiments provide a multi-axis movement of the interaction structure 24, where, for example, different or additional parts of the active structure 26 can be rotated to one another at an angle of unequal 0 ° and / or unequal 180 °. The parts 26a and 26b can be formed as respective partial actuators or actuation devices and can be controlled, for example, via an assigned actuator signal, similar to or in the same way as the signal 32.

The interaction structure 24 can have one or more surfaces or structures which are provided for interaction with the fluid. In a preferred configuration, the interaction structure 24 has a plurality of plate structures or fin structures 36 that run essentially parallel to one another.

Between adjacent moving fin structures 36, elements can optionally be provided which subdivide the cavity 16 into partial cavities. These preferably rigid elements or fins 38 can each define partial cavities of the cavity of the layer structure 12 in pairs or in combination with a surrounding substrate. At least one of the structural parts of the interaction structure, referred to below as fins, which have any geometry, but preferably a low-mass, stiff configuration, is shown in FIG arranged at least one of the partial cavities. The respective movable fin 36 can thus be arranged so as to be movable to and fro in a partial cavity. A common movement of several or all of the moving fins 36 can be made possible via a mechanical coupling of the moving fins 36 to one another, for example by a connecting element 42 which mechanically connects the moving fins 36 to one another and can be connected to the coupling part element 28a, so that the Movement of the active structure 26 is passed on to the moving fins 36.

One or more suspensions 44 can connect the connecting element 42 and / or the moving fins 36 or the interaction structure 24 to the surrounding substrate, for example the layer 12 ₂ . The rigid fins 38 can also be connected to the substrate in this or another layer.

In other words, the plane with the passive elements of the interaction structure 24 can be used to generate the mechanical effect with a high degree of effectiveness. The effectiveness can be improved by the increased packing density and the level height or layer thickness of the layer 12 ₂ , which is independent of the active layer. The omission of the active elements in the structure level 12 ₂ reduces the space requirement at least with regard to the required chip surface and enables different and adapted production methods for the different levels. There is the possibility of designing the passive elements of the structural level 12 ₂ as an elastically suspended or, alternatively, unsuspended, free resistance element 42. Alternatively, a plurality of elastic bars or other structures, for example for generating sound waves, can also be located in the structure plane 12 ₂ .

The described division of the functional levels is particularly advantageous because, for example, to generate high forces or high sensitivities, a large active area together with a small distance between electrodes or other active elements of the active structure 26 can be desirable, for example a large aspect ratio nis. In the manufacturing processes, such an aspect ratio, that is to say, a thickness along the z-direction with the desired spacing in x / y, can be limited. At the same time, a large interaction surface can be desirable for an interaction with the fluid, which, however, does not necessarily have to be as tightly packed as is intended for the active structure. In other words, there are limitations in manufacturing processes. A possible limitation results, for example, from the manufacturing process. In order to enable sufficiently high actuating forces, the aim is to keep the electrode spacing small to realize classic NED. In the case of large actuator thicknesses (which displace sufficient fluid), small electrode spacings can no longer be achieved, or only with great, possibly unjustified effort. This results in a contradiction between the necessary height of the electrodes and the necessary electrode spacing.

The decoupling of the active structure from the interaction structure 24 and the possibly missing or less critical requirement of the small distances in the interaction structure 24 make it possible to maintain the aspect ratios in the active structure 26, since a small extension along z is sufficient for the desired forces. For the fluidic effect, a higher extension along z can be selected for the interaction structure 24, which can be unproblematic or less problematic, since the distances between the individual structures can be greater here.

3a shows a schematic plan view of part of the active structure 26. The active structure 26 can _{comprise a plurality of electrode elements 46 1} to 40 ₆ arranged next to one another, with a total number of electrode elements greater than 2, greater than 4, greater than 6, greater than 8, greater than 10 or greater than 20, greater than 30, greater than 50 or higher. The electrodes can be formed as plate-like structures which, in a possibly theoretical reference state, are approximately parallel to one another, so that the main sides of the electrodes face one another. A main page is understood to be a page that has a comparatively large surface area compared to the secondary pages connecting two main pages. According to some exemplary embodiments, the electrodes can be steered in advance from this reference state, as is shown, for example, in FIG. 3 a.

Also, the main sides of adjacent electrode pairs, such as 48i, and 48 _2, 48 ₂ and 48 ₃ or 48 ₃ and 484 may be disposed facing each other. A respective pair of electrodes 48i to 484 can be designed such that when an electrical potential is applied, for example by means of signal 32, a distance h _gap between the electrodes is at least locally reduced in order to provide at least part of an actuator hub. By connecting several pairs in series, a high total stroke of the active structure 26 can be obtained.

In central regions 52i to 52a of the electrodes, a respective pair of electrodes can be connected to an adjacent pair of electrodes or the surrounding substrate or a supporting structure. For this purpose, spacers 54i can be arranged to 54 ₆ which can optionally also be formed in an electrically insulating manner in order to provide electrical insulation of adjacent electrodes. Alternatively, electrical insulation and coating can be provided on the electrode elements and / or by electrical insulation of electrodes of the same electrode pair 48 from one another, for example by means of spacer elements 56i to 56s. The spacer elements 56i to 56s can, however, alternatively or additionally also be implemented by means of the surrounding substrate, for example the layer 12 ₃ . Thus, electrical insulation, instead of the spacer elements 56i to 56 ₈ via the surrounding medium (or vacuum) may be provided in conjunction with the substrate. There is also the possibility of applying the same potential to adjacent electrodes of different pairs, which means that electrical insulation at this location for these electrodes can be dispensed with if necessary.

This means that the electrode elements of an electrode pair can be mechanically fixed by discrete outer spacer elements 56 in an edge area of the electrode elements and / or the electrode elements can be mechanically fixed in an edge area of the same with the layer structure in order to set a distance h «between the electrode elements , which is otherwise adjustable via the spacer elements 56.

In the edge area, the distance h _ti can be kept small, for example in a range from 0.01 pm to 200 pm, preferably from 0.3 pm to 3 pm and particularly preferably in a range from 1.3 pm.

By means of the inner spacer elements 52i to 52e, a comparable or the same distance can be set between the electrode pairs as between individual electrodes obtained by means of the outer spacer elements 56.

By applying an electrical potential between electrode elements of an electrode pair 48, a change in length of the electrode pair and thus a stroke of the active structure 26 can be brought about _{along a direction within the MEMS plane 14 2, for example along y, which can be transmitted to the interaction structure 24} .

Due to the arrangement of the at least partially optional spacer elements 54 in central areas 52, these can be referred to as inner spacer elements. The optional spacer elements 56 in the outer area or edge areas can be referred to as spacer elements. The active structure 26 can have a multiplicity of electrode pairs 48, each of which is mechanically firmly connected in a central region to electrode elements of adjacent electrode pairs at discrete points, for example by the inner spacer elements 52.

In other words, FIG. 3 a shows part of a deflectable element of the active structure 26, which can also be referred to as a micromuscle and which can comprise a multiplicity of conductive bars / electrodes 46 arranged at a discrete distance from one another. In a preferred exemplary embodiment, these bars are a doped semiconductor material and each represent at least one electrode, for example made of metal or silicon, but preferably silicon. Opposite bars are connected to one another via an electrically non-conductive medium. The non-conductive medium can also be an insulating spacer layer into which the deflectable element is segmented in a first and a second extension direction. This means that the beams can be connected to one another by an insulating spacer 54 and / or 56. Further embodiments include gaseous, liquid or solid non-conductive media. In the case of gaseous and liquid spacer layers, the deflectable elements can also be attached to the substrate. In the case of a solid, non-conductive medium, the elasticity is preferably less than the elasticity of the solid, conductive medium. The bars are supplied with an electrical voltage so that there is a potential difference between two adjacent deflectable elements of an electrode pair, such as 46i and 462. This potential difference creates an electrostatic force and the bars are attracted to each other. The elasticity of the non-conductive medium or of the segmented, insulating spacer layers 54 and / or 56 can provide a restoring force. A restoring force can also be obtained from the elasticity of the conductive beams 46. For this purpose, insulating solid bodies, which correspond to the insulating spacers 56, can be arranged between the conductive solid bodies, for example by implementing the spacers 54. One possible arrangement of the spacer elements 54 and 56 is, for example, a so-called “brick pattern”, whereby the support points between the conductive media alternate from row to row, so that the next support point is always between two support points of the adjacent row. The corresponding structure is a periodic structure made up of repeating individual cells 48, which, however, is not absolutely necessary. If a potential difference is generated between the adjacent conductive solids, the overall structure can be deformed. In Fig. 3a l _C denotes eii a dimension of a muscle cell along the x direction, 1 "a dimensioning of a reference point along the x direction, h" dimensioning of a reference point along the y-direction, h _e IEC dimensioning an electrode along the y-direction and h _{gap is} a distance between two electrodes along the y-direction. The parameters mentioned can each be implemented individually and independently, but can also be adapted to one another. Each of these parameters can, for example, be within a range of at least 0.01 pm and at most 200 pm, L _ceii, for example, also up to 1500 pm. Particularly preferred for a special implementation are, for example, lceii = 124 pm, I _ti = 4 pm, h _gap (in a reference state of minimum or maximum actuator deflection) = 1.3 pm, t = 1 pm and / or h _ti = 1 pm, each changeable and / or within certain tolerances.

In the case of an actuation, a change in the value h _gap (for example a shortening) can take place along the y direction and, depending on the geometric design, a change in the value l _ceii along the x direction. Depending on how the coupling to the resistance element or coupling part element 28a in FIG. 2 is implemented, one of the deformation directions x or y is transferred to the coupling part element 28b in FIG. 2. By arranging the further cells next to one another along the y-direction and / or the x-direction, the shift in the direction or the force of the individual cell can be fulfilled or multiplied by the number of cells.

The geometry of the deflectable element 26 (in other words the muscle cell or the micro-muscle) can be used to set the rigidity in the x-direction and / or y-direction in a targeted manner. In addition, the force per deflection can be adjusted or optimized, for example to a "stress-strain curve" (tension-compression curve). In the case of Schaller generation, a lot of deflection with relatively little force is initially required for the initial situation. When the displaced volume increases, the restoring force of the fluid (for example air) on the muscle increases. Then it is necessary to generate more force for deflection. The choice of cell geometry made it possible to adjust the change in force during the deflection process. Furthermore, the ratio of the change in length in the y- to the x-direction (effective Poisson's number of the structure) can be adapted via the cell geometry. With the right choice of cell geometry, muscles can be designed with an effective Poisson's number less than 0. Such structures, which are called auxetic structures, can show very special properties when bent. These properties offer potential for muscle improvements in terms of vertical pull-in. FIG. 3b shows a schematic plan view of part of the active structure 26 according to an exemplary embodiment. Compared to FIG. 3a, the same elements can be provided and, in addition, an electrically insulating layer 58i, 68 ₂ , 68 _{3 can be provided between adjacent electrodes 46 1} and 46 ₂ , 46 ₃ and 46 ₄ , 46s and 46e and / or 46 _{7 and 46e} or 58 ₄ may be provided. The insulating layers 58 can comprise electrically insulating materials, for example silicon oxide, silicon nitride or other insulating materials, in particular Al2O ₃ .

Although the electrically insulating layers are shown 58i and 68 ₄ so that they have a dimension along the y-direction which is made thinner relative to the outer spacers 56, they may alternatively also blocks an equal or greater Di / comprise expansion, which, for example, an end position can be set or influenced during actuation. The thickness can be uniform or variable along the x-direction.

The electrically insulating layers 58i to 58 ₄ may be suspended between the outer spacer selementen that the pair of electrodes are arranged 48i ₄ to 48 in an edge region of the electrodes to the electrodes to be fixed mechanically. Alternatively, an arrangement of the insulating layers 58i can also be done to the substrate or other fixed structures to 58. ₄ Alternatively or additionally, a corresponding configuration can also be obtained by arranging the outer spacer elements 56 as a continuous, possibly locally thinned layer between the electrodes.

In other words, FIG. 3b shows a further exemplary embodiment with an insulating spacer layer. The illustrated alternative spacer 58 represents a connec tion between the spacers 56 and is, for example, cohesively connected to them. In a preferred embodiment, spacers 56 and 58 are made from the same material. This advantageously increases the dielectric constant in the gap. In addition, there is also an improvement in terms of the rigidity of the deflectable elements in their thickness direction. Short circuits between the electrodes can also be avoided, for example during lateral pull-in. Furthermore, the reliability of the active structure 26 can be improved because the so-called cold anodization can be reduced or avoided. FIG. 3c shows a schematic plan view of part of the active structure 26 according to a further exemplary embodiment, which continues the configuration of FIG. 3a. In a region of the elements referred to as inner spacers 52 in connection with FIG. 3a, further electrodes, for example the electrode 46 ₇ , can be arranged which, with one or more electrodes or sections thereof, form a further pair of electrodes 48s, for example by applying different potentials. In other words, a further pair of electrodes can be defined by appropriate spacing and fixing by means of electrodes of different electrode pairs. A kind of honeycomb pattern can be obtained, which offers high forces with high stability at the same time.

FIG. 3d shows a schematic plan view of part of the active structure 26 or a pair of electrodes 48 thereof. In contrast to the above described explanations, the electrodes are mounted 46 ₁ and 46 ₂ opposed to each other by means of a substrate material 62 from each other, fixed and spaced about the material of the layer 12 ₃ of the MEMS 20. The electrodes 46 ₁ and 46 ₂ may toward the middle portion 52 have an increasing distance from one another, for example through a curvature facing away from one another and / or through corresponding fixations in the central region 52, which can also include straight electrode shapes in sections, as shown for example in FIGS. 3a and 3b. This allows adaptation to an active generation of attractive forces.

Instead of a single insulating layer, which is shown in Fig. 3b, two insulating layers may be arranged 58a and 58b between the electrodes 46 ₁ and 46 _2, where it can be seen that instead of fixing the insulating layers 58a and 58b and / o of the electrode 46i and 46 ₂ on the substrate material 62 can also be fixed relative to one another by means of the outer spacer elements 56. Alternatively, only one of the insulation layers 58a or 58b can also be arranged. A shape of the insulating layer 58a and / or 58b can be adapted to a shape of the electrodes 46 ₁ and / or 46 _{2 of} the electrode pair 48 which is deflected in advance in a passive state of the MEMS. For example, the insulating layer 58a is curved at least within a tolerance range in accordance with a curvature of the electrode 46 _1. Likewise, the insulation layer 58b is curved _{at least similar to the electrode 46 2.}

In this respect, the layers 58a and 58b can be understood as partial layers of the insulation layer 58, in which each partial layer has a pre-deflected shape of the electrode 46 ₁ or 46 ₂ follows. A distance between opposite main surfaces of the sub-layers 58a and 58b (for example the main surfaces facing the respective electrode 46i and 46 ₂ ) along an electrode course, for example along the x-direction in the MEMS plane of the active structure between the bevels In this respect, the areas of inclination on the substrate material 62 can be variable. The advantage of such a configuration is that the insulating layer 58a and / or 58b, corresponding to the electrodes 46 ₁ and 46 _2, can lengthen or expand comparatively easily along the x-direction when the electrodes move towards one another. To this extent, this can reduce or avoid material stress in the insulating layer 58a and / or 58b, which is advantageous both for the deflection behavior of the actuator and for the material stress on the insulating layer.

In other words, FIG. 3d shows how the insulating layer 58a / 58b between the electrodes 46i and 46 ₂ follows the shape of the electrodes. This has the advantage that the rigidity of the deflectable elements in the x direction is significantly increased because a higher proportion of the insulating spacer layer, for example comprising Al ₂ O ₃ , is used.

Fig. 3e shows a scanning electron micrograph and a schematic plan view of part of the active structure 26. The location of a fluid or cavity 64 between insulation structures and insulation layers is shown.

In other words, FIG. 3e shows, in a scanning electron microscope image, mushroom-shaped spacers 56, consisting of Al ₂ O ₃ , which are used when short circuits are to be prevented in the event of a vertical pull-in. It is therefore no longer possible for these fungi for example for the active structure 26 to come into contact with the interaction structure 24 and for an electrical short circuit to occur. The spacers 56, which are referential as mushrooms because of their shape, which can in principle be freely adjusted, can protrude from the image plane and prevent an electrical short circuit between the active structure 26 and the interaction structure 24. Thus, spacers between the interaction structure 24 and the active structure 26 can be created distributed over the entire construction part extension.

4a shows a schematic plan view of an interaction structure according to an exemplary embodiment that can be used in MEMS 10 and / or 20, for example. The interaction structure 24 can, for example, be designed symmetrically to an axis of symmetry 66, which can be arranged in the MEMS 10 or 20, for example, parallel to a y-direction, this not being necessary.

A plurality of resistance elements or fins 36i to 36io can be arranged on the connecting element 42 along the y-direction, with a number, a size and / or a geometry being adaptable to the respective requirement. At opposite ends, the interaction structure 24 can be connected to a surrounding substrate _{via preferably elastic suspensions 44i and 44 2.} Although the suspensions 44i and 44 _{2 are} advantageous in terms of guiding the movement of the interaction structure 24, it may already be sufficient to provide a suspension by means of the coupling part element 28a. As an alternative or in addition, other types of motion control and / or suspension can also be provided. Exemplary embodiments create fins 36 which have different cross-sections. For example, the fins 36i can taper to a point starting from a center. In the area of the connection with 42, the widths or material expansions or material thicknesses of the fins 36 are, for example, large and small at the freely oscillating end. This has the advantage that possible stresses in the area of the connection can be minimized in accordance with the material. Alternatively or in addition, it is possible to make the fins 36 hollow on the inside. This offers a high potential for lightweight construction in particular in the area of the connection to 42, where there is a high potential for mass savings.

FIG. 4b shows a schematic perspective view of the interaction structure 24 from FIG. 4a. The resistance structure 24 can, as described in connection with FIG. 2, be moved back and forth, which is why the interaction structure 24 can also be referred to as a shuttle. The interaction structure 24, like other moving structures in the structure level 14i, can be viewed as a passive element. Elastic suspensions 44i and 44 ₂ can be implemented via elements which have a lower rigidity than the passive or active elements and / or are designed as a resilient element. The elastic suspension 44i and / or 44 ₂ makes it possible to adjust the natural frequencies of the shuttle without having to change the active layer. For this purpose, geometries differing from FIGS. 4a and 4b can be used. In addition, through a suitable choice of the stiffness distribution, elastic guidance of the resistance element or of the interaction structure 24 can be realized. Such a guide can be designed so that the resistance element is only in the intended Direction has a mobility or at least has a preferred mobility.

Compared to the mechanical coupling by the coupling element 28 or the coupling sub-elements 28a and 28b, the rigidity of the suspension 44i and 44 _{2 can be} lower, so that, for example, the mechanical coupling of the coupling element 28 has a mechanical rigidity that is greater by a factor of at least 3 is as a mechanical coupling of the interaction structure 24 with the layer structure by means of the suspensions 44i and 44 ₂ or other connections.

Other embodiments include MEMS with a resistance element relationship as interaction structure, which are carried out without additional suspensions 44i and 44 _second This means that, apart from the mechanical coupling 28a / 28b to the active structure, the interaction structure 24 can be arranged without a suspension. 4a and 4b, the resistance structure 24 is connected on at least one side to the surrounding substrate (not shown), and on the other hand it is connected to the actuators, i.e. the micro-muscles or deflectable elements 26 of the drive plane 14 ₂ . This connection is preferably made rigid. Here, for example, form-fit, force-fit and / or material-fit connections come into consideration. In a preferred embodiment, the connecting element / coupling element 28 is materially connected to the interaction structure 24 (passive element) and the active structure 26 (active element) and has a rigidity that corresponds to the active and passive element. Other embodiments include a connecting element 28 that is less rigid than the active and passive elements. In other words, it is designed as a spring element in alternative exemplary embodiments. One of the two connecting elements 28a or 28b protrude from the respective plane by at least 1 μm, so that it can be ensured that the connection actually only takes place via the connecting element 28a and the connecting element 28b. This means that the gap 34 shown in FIG. 2 can have an extension of, for example, 1 μm.

5a shows a schematic plan view of an active structure 26 of a MEMS 50 according to an exemplary embodiment, which can easily be combined with interaction structures from MEMS 10 and / or 20 and further structural elements of the exemplary embodiments described herein. The sub-element 28b is mechanically connected to a connecting element 68 or is formed in one piece, on which a plurality of electrode arrangements 72 are arranged. For example, the electrode arrangements are connected in series so that, for example, electrode arrangements 72 1 and 72 _{2 are} arranged in series between the substrate in the layer 12 ₃ and the connecting element 68. Each of the electrode arrangements 72 can form a movable layer arrangement which is described in more detail in connection with FIG. 5b. The movable layer arrangements can be curved with a radius of curvature, wherein furthermore, optional degrees of curvature used movable layer arrangements 72 connected one behind the other, for example the movable layer arrangements 721 and 72 ₂ , can have alternating signs. With simultaneous or alternating actuation of the movable layer arrangements 72i and 72z, this can at least influence a course of the generated movement.

The movable layer arrangements 72 can be arranged in several groups between the connecting element 68 and the substrate. In FIG. 5a, four groups are provided in four quadrants by way of example in order to enable a symmetrical suspension of the coupling part element 28b.

The multiplicity of movable layer arrangements is arranged, at least in groups, in the example of the MEMS 50 to form several axes of symmetry 66 ₁ and 66 ₂ , which are arranged, for example, parallel to the x-direction and / or to the y-direction. Another type of symmetry can also be present, for example point symmetry, for example around a geometric center point of the coupling part element 28b in the plane shown. A rotational symmetry or other types of symmetry can also be provided, which can also be set using the actuation directions provided.

FIG. 5b shows a schematic plan view of a movable layer arrangement as it can be used in MEMS 50, for example. The movable layer arrangement comprises at least three beams 76i, 76 ₂ and 76 ₃ , which are designed to perform a movement or deformation in response to an electrical potential. The bars 76i, 76 ₂ and 76 ₃ can for example have electrically conductive materials in correspondence with the electrode elements 46, for example metal materials and / or doped semiconductor materials and can be arranged for electrostatic forces. However, it is also possible to use thermally induced deformations, piezoelectric forces or another type of electrically generated actuation by designing the active structure in such a way that it comprises electrostatic, piezoelectric or thermomechanical electrode structures and / or combinations thereof. The bar 76 ₃ is arranged between the bars 76 i and 76 ₃ , for example. The bars 76i, 76 ₂ and 76 ₃ are fixed in discrete areas 78i and 78 _{2 in an} electrically insulated manner from one another, for example by means of electrically insulating spacer elements 82i to 82 ₄ . Although the electrically insulating spacer elements 82 are shown in such a way that they are arranged in edge regions of the bars 76 1 to 76 ₃ , they can alternatively or in addition to this also be arranged in a central region or in a region in between. The movable layer arrangement 72 is designed such that, in response to an electrical potential between the beams 76i and 76s on the one hand and / or in response to an electrical potential between the beams 76 ₂ and 76s on the other hand, a movement along a direction of movement in the MEMS plane 14 _{2 is} executed, with which the coupling element 28, in particular the coupling part element 28b is moved. For example, based on a clamping of the movable layer arrangement 72, an in-plane-aligned wiping movement of the movable layer arrangement 72 can be obtained, which can be converted into a linear movement of the mechanical coupling part element 28b by means of symmetrical suspension. Other types and forms of movement are easily adjustable.

In other words, the Figure 5a show. And 5b of a deflectable element 26 are connected to the partial elements of a movable layer arrangement 72i and 72 ₂ (not shown) and connected to the resistance element 24 via the connecting member 28b, an alternate embodiment. The structure of the deflectable elements or movable layer arrangements can be a structure of at least three electrodes which are separated from one another by insulated spacers. The two outer electrodes receive the same voltage, for example a reference potential or GND, the middle electrode can receive a signal voltage, for example in the form of signal 32. As a result, the deflectable elements can be deflected. Due to the symmetrical construction of the movable layer arrangements 72i and 72 ₂ to one another, a linear deflection behavior can be realized. A corresponding structure can be obtained, for example, in accordance with WO 2012/095185 A1.

FIG. 6a shows a schematic perspective view of part of a MEMS 60 according to an exemplary embodiment, which can essentially correspond to the explanations in FIG. 2. The layers 12i and 12 ₄ are not shown by way of example, but can be arranged, as well as other layers. The parts 26a and 26b can each be formed as independent actuators, which are arranged opposite one another and are mechanically coupled to one another and to the interaction structure 24 by means of the coupling part element 28b, the coupling part element being arranged between the actuators 26a and 26b. It can thus be achieved that the active structure 26 is designed to lengthen, based on a first actuation signal for one of the actuators 26a and 26b, in a first region parallel to the actuation direction and to shorten it in the other part thereof. Based on a different actuation signal, a complementary movement can be achieved by reversing the shortening and lengthening / expansion of the respective active structure.

With reference to the active structure 26 of FIGS. 2, 3a, 3b, 6a and 6b, the electrode pairs, as well as, for example, the movable layer arrangements from FIG. 4, can be arranged in a row. For example, the structure explained in more detail in FIGS. 3a and 3b can have a number of _{pairs of electrodes arranged parallel to an actuation direction in the MEMS plane 14 2} in order to move the interaction structure along this direction in the MEMS plane 14i to effect. Embodiments optionally provide at least one second row of electrode pairs, which are arranged parallel to a second, different direction, in order to bring about a movement of the interaction structure 24 along a further direction. It is pointed out that the respective actuation direction of the active elements can also be deflected by means of suitable mechanical deflection elements such as levers or gears or the like.

For example, it is conceivable that one or more further partial actuators are arranged at a 90 degree angle to the partial actuators 26a and 26b in order to effect a movement parallel to the x direction in addition to a movement parallel to the y direction.

FIG. 6b shows a schematic perspective illustration of a section from FIG. 6a, in particular in the area of the mechanical connection between the coupling part elements 28a and 28b. The active structure 26 is formed, for example, in accordance with the remarks on MEMS 20 and FIGS. 3a and / or 3b, with two opposite actuation devices 26a and 26b being arranged, which change the length of the respective actuation device 26a based on different actuation signals or 26b and by means of the mechanical coupling so that a change in length or deformation in the other actuation part can also cause.

As a result, an at least almost linear deflection behavior can be obtained through the coupling of two muscles or actuation devices acting against one another, which can also be referred to as balanced behavior, which at least approximates a linear behavior. In other words, a first and a second actively deflectable element 26a and 26b are connected to one another via a connecting element 28b. This connection can be rigid in order to advantageously enable a linear behavior of the resulting actively deflectable element, for example at the location of the coupling element.

Such a configuration can reduce or lessen the non-linear voltage-displacement behavior that results from electrostatic actuation. This principle can also be applied to any other actuators. Asymmetrical actuators such as A-NED (asymmetrical nanoscopic electrostatic drive) can be used, which are arranged so that two muscles cause a deflection in opposite directions. Symmetrical actuators such as B. the described balanced NED (BNED) or BA-NED (balanced-asymmetric NED), which are described in connection with further exemplary embodiments, can be used. For BNED, for example, the voltage on the external electrodes in the two muscles can be chosen to be reversed. The same works for a BA-NED. Alternatively, the position of the isolation islands in BA-NED can be selected differently in order to specify the direction of deflection of the actuator.

The gap 34, which is described in connection with FIG. 2 as being at least 1 μm, is preferably arranged between the active structure 26 and the interaction structure 24, other values also being selectable for this. For example, the respective coupling part element can protrude from the plane of the electrodes or fins. Alternatively or partially, a preferably electrically insulating mechanical connecting layer 84 can set the gap 34 entirely or partially. The connection layer 84 may comprise silicon oxide, silicon nitride, or aluminum oxide, for example.

7a shows a schematic plan view of the interaction structure 24 of the MEMS 20, which is connected to the substrate of the layer 12 _{2 via the suspension 44i and 44 2} and is suspended thereon. The suspensions 44i and 44 ₂ can, for example, spiral spring elements include, by means of which the interaction structure 24 is elastically coupled to the layer structure. A mechanical coupling of the interaction structure to the layer structure can have at most the same rigidity as the rigidity of the interaction structure 24 itself, but is preferably made softer or, alternatively, not implemented.

The movable fins 36i to 3620 can each move in partial cavities defined by the surrounding substrate and the rigid partition walls or rigid fins 38, which are arranged in a contactless or low-friction manner with respect to the interaction structure 24. The fin structures 36i to 3620 of the interaction structure can thus be movably arranged in the partial cavities 16a to 16t. 7a shows an undeflected state of the MEMS 20, for example.

7b shows a schematic plan view of the interaction structure 24 in a state in which the interaction structure 24 is deflected along the positive y-direction, so that a first area 16ai of a partial cavity 16a is enlarged and an associated other part 16a _{2 of} the partial cavity 16a is reduced what can be causally related to a fluid flow.

Fig. 7c shows a schematic plan view of the interaction structure 24 of FIG. 7a, which is deflected as compared to the Fig. 7b along the opposite negative y-direction, thus for example by the movement of the element 36i a change of the volumes involved 16AI and 16a ₂ which can also be causally related to the volume flow.

By coupling the elements 36 to one another by means of the connecting element 42, a uniform change in the sub-cavities can be obtained, taking into account the sizes of the sub-cavities set to be the same or different from one another, which can be selected by positioning the elements 36 on the one hand and the elements 38 on the other.

In other words, FIGS. 7a to 7c show the deflection of the resistance element 24 starting from a rest position in FIG. 7a in a first direction (+ y) in FIG. 7b and in a second direction (-y) in FIG. 7c. The curvature of the suspensions 44i and 44 ₂ is also shown if. In exemplary embodiments, the geometry of the suspension can differ from what is shown. The geometry can be, for example, roof-like, wavy or s- be shaped. The configuration can be selected based on the respective application, but can have a decisive influence on the resulting resonance frequency of the moving system based on stiffness properties or the like. Another exemplary embodiment relates to a resistance element 24 without the suspensions 44i and 44 _{2 shown} . FIGS. 7a and 7c further show that cavities 16a to 16t, 16ai to 16t _{2 are} formed by the moving fins 36 and rigid fins 38. The length of the moving fins 36 can be dimensioned such that the distance between the free end of the fins 36 and the surrounding substrate 12a is as small as possible. The distance is chosen so that the exchange of fluid between the cavities 16ai and 16a ₂ or 16ti and 16t ₂ hardly or not take place, which means that fluidic losses are low. In other words and in connection with the exemplary embodiment of a MEMS loudspeaker that is implemented by means of the MEMS shown here, an acoustic short circuit can be avoided at this point.

7d to 7f show the interaction structure 24 from FIGS. 7a, 7b and 7c in corresponding states, groups 18a and 18b of openings being additionally shown. A first group 18a of openings can be provided, for example, in a top wafer and another group 18b in a bottom wafer of the MEMS 20, or vice versa. As a result, different sub-cavities 16ai to 16L or 16a ₂ to 16t _{2 can be} connected to different sides of the MEMS.

In the positioning shown in FIG. 7e and corresponding to FIG. 7b, fluid can thus be moved out of the openings in group 18b and / or moved in through openings in group 18a, which can also be influenced by the arrangement of valve structures.

In FIG. 7f, an opposite configuration can be seen in which, in accordance with FIG. 7c, the partial cavities, which are indicated with “1”, are reduced so that fluid is moved out of the openings of group 18a.

As shown with reference to FIGS. 7b to 7f, different partial cavity parts, for example the partial cavity part 16ai or 16ti compared to partial cavity parts 16a ₂ or 16t ₂ with different openings, can be fluidically coupled, the openings being coupled individually or in groups to the environment 22 can be or different sides of it. The fin structures can separate partial cavities into different partial cavity parts, this not necessarily meaning hermetically sealed, but rather can bring about a separation while avoiding a fluidic short circuit. The volumes of the partial cavity parts can each be variable in a complementary manner to one another based on the movement of the interaction structure.

The openings of groups 18a and 18b can be wholly or partially arranged starting from the partial cavity perpendicular to the plane direction, that is, along the positive or negative z-direction. As an alternative or in addition, openings can be provided in the MEMS level 12 ₂ or the level 14 ₂ .

Combinations are also conceivable, according to which a lateral outlet from the partial cavity parts is provided, as is shown, for example, in FIG 7f different partial cavity parts are connected to an upper side or underside, wherein a corresponding connection of the partial cavity part, for example the partial cavity part 16ai laterally, can take place within the plane 14i. This means that after a lateral outlet or inlet in the layer 12 ₂ , the direction of the fluidic flow can be deflected so that MEMS openings of the groups 18a and 18b with MEMS openings, cover layers, for example Layer 12i or 124 of the layer structure 12 are fluidically connected along a direction perpendicular to the plane direction, ie, along z.

In other words, cavities can arise through the geometry of the passive element 24; in particular, in the partial cavities defined by the rigid fin structures, partial cavity parts can be defined by the geometry or moving fins of the element 24. The resulting partial cavity parts are separated from one another in the interior of the component in such a way that either no or only a very small fluid exchange can take place between the partial cavity parts. The partial cavity parts can be connected to the outside through openings 18a and 18b in the bottom and cover wafer. When the passive element 24 is displaced, a fluid is conveyed through openings on one side into the cavity and conveyed out on the other side. In one embodiment, that of a loudspeaker, this movement of the passive element generates a sound pressure. It is also conceivable to create a pumping effect. The actuation of the resistance element 24 and other passive elements can take place via the deflectable elements 26 of the device level 14 ₂ . Any deflectable element can be used such as micromuscles or ANED muscles described herein. Since the device level can be designed without passive elements for mechanical fluidic interaction or has a negligible proportion of this, it can be completely filled with active elements. This means that a relatively large number of elements can be placed very densely packed. This makes it possible to adapt the active elements to the necessary mechanical effect, which is then achieved by the resistance element 24. The transmission of the mechanical effect between the active plane and the passive plane takes place via the fixed connection between the device wafer and the handling wafer, the elements 24 and 26, which remains after production or is subsequently produced.

The alternative embodiment shown in FIG. 7g of openings which connect the cavities to the surrounding fluid can be designed in such a way that openings 18'a and 18'b are arranged in the structural wafer in such a way that a connection to the openings 18a and 18b from FIGS. 7b to 7f of the bottom or handling wafer is made possible. The openings can be arranged in the structural wafer in such a way that the openings are fluidically connected to an upper or lower side. This results in a further advantage by separating the functions on two levels. The additional levels create new possibilities for fluid guidance, such as air guidance, which allow the outlet openings of the two chip sides to lie one on top of the other. For this purpose, short channels, openings 18’a and 18’b, in which the device level are placed in the structural level, can lead the fluid flow to the outlet openings (in this case air). This means that the outlet openings can be packed more densely, since the outlet openings can be a limiting factor in the packing density of the passive sound-generating elements, so that this approach can achieve an increase in the packing density of the sound-generating elements.

8a to 8c show a schematic perspective top view of the MEMS 20 in the plane 14 ₂ , so that the layer 12a and the active structure 26 are shown by way of example. The actuator parts 26a and 26b can, for example, have more than one of the actuator rows 86 ₁ to 86 ₅ , which are arranged next to one another along the x-direction, and possibly mechanically coupled to one another or even form continuous electrodes, as shown, for example, in FIG 3c is shown. By way of example, 5 rows of actuators 86 ₁ to 86 _{5 are} provided, with any other number of at least 1, at least 2, at least 3, at least 4, at least 6, approximately 10 or the like being provided can be. It is possible, but not necessary, for the actuator parts 26a and 26b to be formed symmetrically with respect to one another.

In Fig. 8a a neutral, i.e. That is, the undeflected state of the active structure 26 is shown, while FIG. 8b shows a state in which an expansion of the actuator part 26b is shortened and the actuator part 26a is correspondingly required, for example by the actuator part 26b being activated. As a result, a movement of the coupling part element 28b along the positive y-direction can be obtained.

FIG. 8c shows a state complementary to FIG. 8d, in which the coupling part element 28b is moved in the negative y-direction compared to FIG. 8a, which can be obtained, for example, by actuating the actuator part 26a. Independently of this, the arrangement of fluidic channels 88 ₁ to 88 _n can be provided in the layer 12 ₃ , which for example and with reference to FIG can connect fluidically.

In the embodiment according to FIGS. 8a to 8c, too, the MEMS can have at least one first actuator for converting a first actuation signal and a second actuator for converting a second actuation signal.

In FIGS. 8a to 8c it is shown that two deflectable elements 26a and 26b constructed mirror-symmetrically to one another, which can be arranged opposite to a center line, which can implement a balanced muscle. Another possibility of a balanced muscle is the choice of muscle cell geometry. Embodiments described herein relate to actively creating deflectable elements that have a high level of linearity.

The geometry of a deflectable active element determines its mode of action and direction. By combining different, at least two, but also more geometries, different directions of action can be implemented within a muscle or deflectable element.

In other words, FIGS. 8a to 8c show the deflection of the deflectable element 26 consisting of a first and a second deflectable element 26a and 26b. In a first time interval, which is shown in FIG. 8b, the deflection takes place in a first direction (+ y) by reducing the value for h _gap from Fig. 3a or 3b in the deformable element 26b. In a second time interval, which can follow or precede the first time interval, the deflection in a second direction (-y) takes place by reducing the value for h _gap in deflectable element 26a and consequently increasing h _gap in deformable element 26b.

9a shows a schematic plan view of an interaction structure 24 according to an exemplary embodiment. The interaction structure 24 ‘can be provided as an alternative or in addition to the interaction structure 24 in a MEMS described herein, for example the MEMS 10, 20 and / or 40.

FIG. 9b shows a schematic perspective view of the interaction structure 24 'from FIG. 9a.

While other interaction structures are described in such a way that fixed fins are connected to the substrate, against which the interaction structure moves, the interaction structure 24 ′ can have a plurality of plate or fin elements which are parallel to one another in the MEMS plane 14i and perpendicular thereto are arranged oriented and are connected to a MEMS substrate in opposite edge regions. Alternatively, plate elements or fin elements 92 can be connected to different actuator parts in groups and alternately in pairs. For example, several actuators of the actuator parts can be provided. Thus, a first group 92a of plate elements 92 can be arranged alternately with plate elements 92 of a second group 92b. Plate elements 92a and 92b of a respective group can be actuated individually or jointly via actuators 94a and 94b, which are shown in simplified form and which in turn can have one or more partial actuators 26a and 26b. In the exemplary embodiment shown, at least one of the actuators 94 has the partial actuators 26a and 26b. Several actuators or muscles can in turn drive individually or jointly via connecting webs 96ai, 96a ₂ or 96bi, 96b _{2 in} groups or globally with one another. This allows the arrangement of one or more actuators. The coupling part elements or plate elements 94a 1 to 94ae on the one hand or 94bi to 94be represent a simplified view of the actuators 26a and 26b in some configurations to actuate. This configuration makes it possible to design the interaction structure 24 'in such a way that a multiplicity of fin elements 92 are arranged, which can be arranged parallel to one another in the MEMS plane 14i, at least temporarily in a certain, for example, inactive state. The fin elements can be arranged oriented perpendicular to the MEMS plane 14i. The fin elements 92 can be mechanically coupled to one another in groups by means of connecting elements 94 and / or 96 to form fin groups.

The different fin groups 92a and 92b can be deflected relative to one another, which can reduce the stroke required to achieve a minimum distance between fin elements compared to the rigid fins 38.

For example, provision can be made to deflect fin elements of fin group 92a and fin elements of fin group 92b, the elements of which can be arranged adjacent to one another and alternately, in opposite directions.

9c shows a schematic perspective view of a section from FIGS. 9a and 9b, in which it can be seen that the connecting webs 96a are mechanically firmly connected to fin elements of group 92a, while connecting webs 96b are mechanically connected to fin elements of group 92b. The connecting web 96bi is at least partially driven, for example, via the coupling part element 94bs, while the connecting web 96ai is at least partially driven via the coupling part element 94ae, several coupling part elements also being able to be used for the drive, as described. Different levels of the structural elements can be provided for the mechanical connection, so that the corresponding movements can run past one another. In particular, the connecting webs 96ai and 96bi are movably arranged with respect to one another. The connecting webs 96ai and 96bi are partially masked out in order to enable a better representation.

9d shows a schematic plan view of part of the interaction structure 24 '. The connecting webs 96ai, 96bi and 96b2 can be mechanically firmly connected via coupling points 98 to the fin elements 92ai to 92a§ of the group 92a or the fin elements 92bi to 92bs of the fin group 92b. The actuators or groups thereof 94a and 94b are, for example, muscle groups. Such a group corresponds, for example, to the arrangement shown in FIGS. 8a-c: two muscle groups working against one another (balanced) move a coupling element 28. In FIGS. 9a-b, several of these muscle groups are now shown in simplified form and they pull together the connecting webs 96. In other words, FIGS. 9a to 9d show a further exemplary embodiment in which an alternative passive element 24 'is designed as an elastic fins or bars. These fins or bars 92a and 92b, with i1,..., N with N> 2, are connected at one or both ends to the surrounding substrate. In a particularly preferred exemplary embodiment, the passive element is further connected to the surrounding substrate. This significantly reduces the total cross-section of the acoustic short circuits. The deflectable element can be divided or distributed over several assemblies 94a and 94b and deflects the elements deflectable in the plane or fin elements or plate elements via arranged coupling rods or connecting webs in the positive or negative y-direction. The deflectable elements 94a and 94b disclosed in this exemplary embodiment include, by way of example, the muscle-like deflectable elements or actuators or other actuators described herein, including the movable layer arrangements of the second aspect. Other types of drive are also possible. The deflection of the coupling rods is transferred to the passive elements, the plate elements. There are two groups of deflectable elements (actuators) of passive elements (plate elements) and of coupling rods (connecting webs), which are designated by way of example with the letter a for a group A and the letter b for a group B. The groups A and B can always be deflected against each other in order to compress the fluid between the passive elements with a high to maximum efficiency. When group A moves in the positive y-direction, group B moves in the negative y-direction. The connection of the coupling rods 53a and 53b in the plane of the deflectable elements is realized by a non-positive connection to the passive elements of the appropriate group. At some points, an additional connection 102 (see FIG. 9c) can be provided, the frictional connection being able to be transmitted from the interrupted coupling rod to the passive element. The passive element can transmit the force to the continuation of the respective coupling rod, that is, between the elements 102 and 104 a force can be transmitted via the plate element, so that the coupling rod can be substituted in certain areas. This allows interruptions in the coupling rod in the plane of the deflectable elements. In addition, the non-positive connection between the coupling rod and the plate element can be off-center on the passive elements, the plate elements, which results in a translation of a small deflection at the point of force application to a significantly larger deflection of the center of the beam, see FIG. 9d. In the following, reference is made to an alternative drive deflection of an interaction structure based on the so-called stator shuttle principle.

FIG. 10a shows an exemplary top view of an active structure 26 of a MEMS 100, which includes partial actuators 26a and 26b, as they are explained, for example, in connection with FIG. 2.

In the plane 14 _2, this movement can be connected to a plurality of coupling elements 28bi and transmitted 28b2, which are designed to deflect in the MEMS layer arranged moving structures 14i, such as fins 36i and 36e, so that the fins 36i to 36 ₈ in partial cavities , which are at least partially defined by optional rigid structures 38i to 38e, are movable, which will be described in detail in connection with FIGS. 10b and 10c.

FIG. 10b shows an enlarged illustration of a section 104 from FIG. 10a, in which it becomes clear that an extension 106i of the interaction structure along the z-direction and / or the y-direction can be significantly larger than an extension IO6 _{2 of} the active one Structure 26.

10b shows a deflected state of the coupling part element 28bi along the positive y-direction, with which the movable elements 36i to 364 suspended from the surrounding substrate, either in one piece or in a form-fitting or force-fitting manner, are moved by a fluid flow through the openings 18ai to 18a ₄ to enable. This means that the interaction structure can be mechanically connected to the MEMS substrate in an area facing away from the active structure 26 and formed flexibly in order to deform when the active structure is deflected. Here, flexible is understood to be at most half, a third or a quarter of the rigidity of the surrounding rigid structures. The rigid fins 38i to 38 ₃ can define partial cavities 16a to 16d as delimiting structures, in which the flexible elements 36 ₁ to 364 are movably arranged in order to deform in the partial cavities 16a to 16d. As has been described, for example, in connection with FIGS. 7a to 7g, the movable elements 36i to 36 ₄ can divide the partial cavities 16a to 16d into partial cavity parts 16ai and 16a ₂ , 16bi and 16b ₂ , 16ci and I6C ₂ as well as 16di and 16d ₂ separate or subdivide. Basie may rend to the movement of the interaction structure and thus of the elements 36i to 36 ₄ a volume in each case of a partial cavity part can be variable complementary to the volume of the other associated partial cavity part.

In the embodiment of FIGS. 10a to 10c, the partial cavity part 16ai, 16bi, 16ci, 16di is connected to the surroundings of the MEMS 100 by means of openings in the layer 12i. In the layer 124 (not shown), for example, the complementary partial cavity parts 16a ₂ , 16b ₂ , 16C ₂ and / or 16d _{2 can be} connected to the external environment, although this can optionally, but not necessarily, take place in the cover layer, but a deflection can also be provided which is described, for example, in connection with FIG. 7g.

10c shows a schematic plan view of the part 104 in which, on the basis of the actuation of the actuator parts 26a and 26b, the elements 36i to 364 are deformed in opposite directions.

In other words, FIGS. 10a to 10c show a further exemplary embodiment of a MEMS assembly 100 for driving and deflecting passive resistance elements 36 in a plane that is independent of the drive plane. Here, a group consisting of four elastic resistance elements 36 is connected via a coupling element 96 with steerable elements 26a and 26b. The deflectable elements can consist of or comprise actuators described in the exemplary embodiments described herein and have, for example, a linear deflection behavior. The group of the elastic resistance elements 36 and the actively deflectable elements 26a / 26b is enclosed, for example, by a border 62 formed from the surrounding substrate. This boundary increases the rigidity of the MEMS component 100 as a whole and includes cavities in which the resistance elements 36 are arranged. Furthermore, the boundary 62 is electrically coupled to the control and serves as a stator. The border 62 can thus synergistically fulfill three functions: it can fulfill an acoustic function and serve as a further wall; which can fulfill an electrical function and conduct the voltage to the actuator; and it can perform a mechanical function by providing a mount for the actuator. The actuator can pull or exert forces from both the shuttle and the stator, but the stator is attached to restrict or prevent its movement. In this game Ausführungsbei the shuttle is the actively deflectable resistance element, which is why an electrical potential is built up between the loading edge 62 and the deflectable element 26a / 26b. To form cavities, further boundaries 38 are provided, which between the resistance elements 36 are arranged. The borders 38 can have a smaller thickness than the border 62. The resistance elements convey fluid into and out of these cavities through openings in the cover and handling wafer. For the entry and exit of fluid into the cavities, openings (for example 18a in the handling wafer) are provided both in the cover and in the handling wafer. The openings are arranged in such a way that they are not or will not be swept over by the deflectable elements 36 in a plan view, which is shown for example in FIGS. 10b and 10c. Alternatively, the openings can also be arranged in the surrounding substrate, as described for example in connection with FIGS. 6a and 6b.

11 shows, in a simplified plan view, an electrical coupling of the MEMS 100 and thus the active deflectable elements or active structures 26a and 26b. UAC denotes a signal voltage, -UDC denotes a first bias voltage and + UDC denotes a second bias voltage. The first bias and the second bias can be set as desired and have the same or different amounts. Both bias voltages can likewise have a positive and / or negative voltage value. Only three movable elements 36 ₁ to 36 ₃ and two rigid elements 38 i and 38 ₂ are shown by way of example.

FIG. 12 a shows a schematic plan view of part of an active structure 26 of a MEMS 120 which, according to exemplary embodiments, can be used as an active structure of other MEMS described herein. Thus, stator electrodes IO8 ₁ and IO8 ₂ , which are arranged opposite one another and between electrodes IO8 ₁ and IO8 ₂ 112, have comb electrode structures 114ai and 114a ₂ on the one hand and 114b on the other hand, which are designed to be actuated by applying the signals UAC, + UDC and -UDC simultaneously or alternately to trigger a movement of the movable electrode 112 in that the comb electrode structure 114b engages in the comb electrode structures 114ai or 114a ₂ .

FIG. 12b shows a state that is complementary to FIG. 12a, in which the movable electrode 112 is deflected with respect to a reference state 116 towards the stator electrode IO8 ₂ .

In other words, FIGS. 12a and 12b show a top view of a further embodiment of the concept according to the opening. The drive within the drive level follows the stator shuttle principle. The fixed border IO8 ₁ and IO8 _{2 of} the actuators is equipped with comb-like, deflectable elements 114b, which mesh in comb-like, non-deflectable counter-elements 114ai and 114a ₂ connected to the substrate. In a first time interval, which is shown in FIG. 12a, the deflection of the comb-like, deflectable elements takes place in a first direction of movement. In a second time interval, which is shown in FIG. 12b, the movement of the comb-like, deflectable elements takes place in a second direction of movement opposite to the first direction. The deflection takes place in-plane and perpendicular to the extension Rich the resistance element tung or the arranged in a different plane interaction structure 24. The passive and arranged in the displacement plane reflection was elements of the interaction structure 24 may be connected on both sides with the surrounding substrate, such as the layer 12. ₂ The resistance elements can be expanded into the active device level and driven there. The movement of the actively deflectable elements, _{i.e. the comb electrode structures arranged in the plane 14 2} , can occur due to the resulting force due to the potential difference between the electrode structures 114a / 114a ₂ on the one hand and 114b on the other. The length of the deflectable comb-like elements can correspond to about 40 to 80% of the length of the resistance selemente.

The electrode pairs of the actively deflectable structures can thus be formed as interdigitated electrode comb structures. For this purpose, a third electrode with an electrode comb structure can be assigned to a respective pair of electrodes in order to form a group of three electrodes, which is shown by way of example in FIGS. 12a and 12b. According to exemplary embodiments, an active structure provides a multiplicity of such cells which, according to the embodiments described herein, can be arranged in one or more rows. The rows can be arranged parallel to one another, for example in order to generate a high force. Alternatively or additionally, it is possible to arrange rows inclined to one another in order to generate an at least two-dimensional movement of the interaction structure or, in other words, a 2D movement of the interaction structure can be obtained through the inclined, non-parallel arrangement of the rows of actuators. The middle of the three electrodes can be deflected in different directions based on an alternating action on the outer electrodes.

12c shows a schematic top view of the active structure 26 of the MEMS 120, in which the comb electrodes that face the stationary electrodes 114ai and 114a ₂ are spatially separated from one another along the y-direction to form comb electrode elements 114bi and 114b ₂ , which are connected to connectable or electrically conductive to the same potential are connected to each other. This can cause a spatial expansion of the comb electrode drive along the direction of movement y, which can make large amplitudes of movement possible.

A bending line of the fin of the interaction structure and / or of the structure suspending the comb elements 114bi and 114b ₂ can be set via a number and / or a location connecting structures 115 or 115i and 115 ₂ , the number of which is at least 1 (see FIG. 12c), may be at least 2 (see Fig. 12d) or higher.

12e shows a schematic top view of the MEMS 120, in which the MEMS level 14i is in the foreground and the MEMS level 14 _{2 is} in the background and is partially covered by the MEMS level 14i, which in turn is partially not shown to expose MEMS level 14 ₂ .

A border 108 can be a multiple of the stationary electrodes 114a through electrode combs 114ai, ... 114a ₄ , ... both multiple times in series and in multiple rows, that is, as at least one-dimensional or at least two-dimensional array with one another . The electrode combs 114ai,... 114a4,.

In the plane 14 _2, a mechanical connection between different movable comb electrode members 114b via one or more connecting webs be provided 96 to a uniform transmission of motion to the interaction structure 24, such as the movable fin to allow 36i to 363, for which one or more coupling elements 282 to 28 _Q can be provided. Other configurations of the electrode combs can also be implemented, for example the enlargements according to FIGS. 12c and 12d.

In other words, Fig. 12e shows the linkage of the coupling rods with the Kamman drive. In contrast to known comb drives, the Kamman drive shown moves exclusively parallel to and partially in plane 12 ₂ or in-plane.

Fig. 12f shows a schematic side sectional view of a MEMS 120 ', which can be constructed similarly to other MEMS described herein and, for example, the electrode comb can have drive of the MEMS 120, the additions to the MEMS120 'can easily be used for other types of drive. Structurally, the drive can be mirrored or doubled on a plane 117, so that instead of the two cam electrode structures 114bi and 114b _2, four comb electrode structures 114bi to 114b4 can be arranged, which are, for example, mechanically and / or electrically coupled to one another directly or indirectly in pairs can which enables a doubling of the actuator pad, while maintaining manufacturing parameters and, in particular, the aspect ratios may be, for example in pairs 114bi / 114b ₃ and 1140 _{2/1140 4.} Alternatively or additionally, the interaction structure 24 can be mirrored at the plane 117 and are used as interaction structures 24i and 24 _2, which enables a further increase in the amount of fluid moving at the same or a comparable surface area requirement of the MEMS.

Dimensions 106i of interaction structures 24i and 24 ₂ and / or dimensions IO6 ₂ of active structures 114bi / 114ba and 114b ₂ / 114b ₄ can be the same or different from one another.

12g shows a schematic plan view of parts of a MEMS according to an exemplary embodiment, for example MEMS 120, in which the active structure 26, starting from the configuration in FIGS Fig. 12d is described. As an alternative to FIGS. 12a-d, however, the active structure 26 is implemented in such a way that one in the shuttle 112a / 112b by means of, for example, electrostatic forces using the fixed comb electrode 114ai to 114a ₄ by means of connecting the elements 115i and 115 ₂ to one in each case associated interaction structure 24i and 24 _{2 is} passed on. In the representation plane, instead of the interaction structures 24i and 24 _2, elements 119i and 119 ₂ are shown which, for example, but not necessarily, can be arranged at least partially in the MEMS plane 14i, as can be seen from the schematic side sectional view of FIG MEMS is shown in Figure 12g.

The elements 115i and 115 ₂ can be formed elastic and the movement of the shut TLEs and / or the interaction structure at least different bearing parts in relation to the substrate zen.

The comb electrode structures 114bi to 114b ₄ can be combined to form pairs 114bi and 1140 ₃ and 1140 ₂ and 114b ₄ , it being possible for the pairs to be electrically isolated from one another by means of electrical insulation. Although there is also a continuous Isolation layer can be used, offer discrete isolation areas 78i to 78i ₂ an advantage in terms of mechanical deformability of the structure.

In other words, the comb electrodes 114ai to 114a ₄ on the one hand and 114bi to 114b ₄ on the other hand can each be _{formed or grouped into pairs 114i to 114 4} , of which each pair of electrodes has a fixed comb electrode 114ai with i = 1.4 and one that is movable relative to the fixed comb electrode 114a having movable comb electrode 114bj. The MEMS can have any number of electrode pairs, for example 1 as in FIGS. 12a-d, which can be supplemented, for example, by a third electrode, but also a higher number of at least two. According to FIG. 12g, 4 pairs are shown by way of example, which enables symmetrical actuation around a minimum distance between the elements 115i and 1162. While pairs mirrored on an axis parallel to the y-axis are constructed identically on elements 115i and 1162, can be understood as a continuation of a respective pair or even as a pair of comb electrodes, in the case of pairs that are, for example, on an axis parallel to the x-axis are arranged opposite one another, for example the pairs 114i and 114 ₂ or 114a and 114 ₄ formed in such a way that the movable comb electrodes 114bj of the first comb electrode pair 114i or 114s and of the second comb electrode pair 114 ₂ or 1144 are mechanically coupled to one another and electrically isolated from one another , for example using the discrete areas 78. At one point in time, these comb electrodes can thereby be acted upon with mutually different electrical potentials + UDC and -UDC. The MEMS can be designed to apply a time-variable potential to the stationary comb electrodes 114ai of the first pair and of the second pair, namely the potential UAC.

Regardless of other details described in this context, the comb electrodes 114ai to 114a _4, differently than in Fig. 12a-d, have the varying potential UAC applied to them, while the comb electrodes 114bi to 114b ₄ arranged in between, each in pairs in pairs 114bi and 114ba as well 114b ₂ and 114b ₄ different potentials + UDC and -UDC can be applied. Voltages that can be used for this purpose can correspond to other exemplary embodiments and, for example, be in a range of 0.1 V and 24 V or less in terms of magnitude, with + UDC and -UDC comparatively static potentials that may have the same magnitude with respect to a reference potential, such as ground or 0 V, are provided with an inverted sign. The alternating potential UAC can have a variable value and, for example, can be switched back and forth between the + UDC and -UDC potentials in order to generate forces alternately. The pairs 114bi and 114b ₃ as well as 114b ₂ and 114b ₄ can each be acted upon electrically separately from one another with the potentials, whereby the elements 115i and 115i can be used for this function synergetically, which are mechanically fixed and electrical _{with the elements 119i and 119 2} are coupled, but can be electrically isolated from the interaction structures 24i and 24 _{2 , for example by isolation regions 121 1} and 121 ₄ shown in FIG. 12h, which can be formed, for example, comprising oxide materials and / or nitride materials. The elements 115i and 115 ₂ enable the potentials to be easily passed on, for example from different areas 12 _2a and 12 _{2b of} a surrounding substrate or other connection options that are formed electrically isolated from one another.

The advantage of the configuration shown in FIGS. 12g and 12h is that when the MEMS planes 14i and 14 _{2 are} projected into one another, comparatively large spaces between elements of the interaction structure can be filled with a high element density of the active structure. It can be provided, for example., The interaction structure 24i and 24 ₂ or elements or fins thereof with another adjacent actuator cells to be connected, in order to obtain a further increase in strength. For example, the elements 115i and / or 115 _{2 could be extended} starting from the central region of the comb electrodes 114a / 114b beyond the interaction structures 24i or 24 ₂ and connected there to electrically mirrored cells.

A spatial relationship of the elements is shown in a side sectional view in FIG. 12h, the comb electrodes 114bi to 114b ₄ not being shown. By way of example, the dimension 106i is selected in a range from 400 μm to 650 μm, with other dimensions also being able to be used. As an alternative or in addition, the dimension IO6 _{2 is,} for example, at least 30 pm and at most 75 pm, with other values also being able to be implemented here based on the requirements of the application. The rigid fins 38i and 38 ₂ can be used for dividing the cavity and can contribute to the saving of material and / or two weight along the y-direction to form spaced elements, but which can be easily formed as a common element. The fins 38i and / or 38 ₂ can optionally be used to mechanically support the comb electrodes 114ai to 114a ₄ , for which purpose, for example, electrically insulating insulation areas 121 ₂ or 121 ₃ can be provided. 13a shows an exemplary top view of a movable layer arrangement or active structure 130 according to an exemplary embodiment, which can be arranged singly or as a multiple in order, for example, to deflect an interaction structure of a MEMS described herein. However, this drive concept is not limited to this, but can be used in any MEMS that comprise a layer structure and a cavity arranged in the layer structure. The active structure 130 is a movable layer arrangement comprising three bars 76 i to 76 ₃ which, for example, can be formed similarly or identically in terms of their structure, as the bars 76 from FIGS. 5 a and 5 b. The bars are also electrically insulated at discrete areas 78ai, 78a ₂ , 78bi and 78b ₂ and fixed with respect to one another, with discrete areas or insulation elements 78ai and 78a ₂ fixing the bar 76i with respect to the bar 76s and discrete areas or insulation elements 78bi and 78b ₂ fixing the bar Fix and isolate 76 ₂ opposite the beam 76a. A number of two discrete areas between two adjacent bars 76i and 76 ₃ or 76 ₂ and 76s is exemplary and can have any number of at least 2, for example 2, 3, 4, at least 5, at least 7, at least 10 or more .

The movable layer arrangement is designed to execute a movement along a movement direction 122a or 122b in response to an electrical potential between the beams 76i and 76s or in response to an electrical potential between the beams 76 _{2 and 76s.} For example, based on a fixation of the layer structure, a potential between the bars 76i and 76 ₃ can cause a movement along the direction 122b, while the mentioned electrical potential between the bars 76 ₂ and 76 ₃ can cause a movement along the direction 122a.

In other words, the deflection direction can be kept in both directions 122a and 122b. The applied voltage can determine the direction. The gap between the bars 78ai and 78a ₂ can, for example, cause a clockwise torque of the display plane and thus a deflection in the direction 122b when the upper end in the image direction is fixed, for example by being in a region of the discrete area of 78ai Actuator has a connection to a substrate (not shown) (interface corresponding in y-direction). A gap between the bars 78bi and 78b ₂ , on the other hand, can generate a counterclockwise torque and cause a deflection along direction 122a when the upper end is fixed or with respect to the upper end. The discrete areas for fixing the bars 76i and 76a on the one hand and the bars 762 and 763 on the other hand are arranged offset from one another along an axial course along a direction 124 of the movable layer arrangement 130. This can be understood to mean that, in at least one area along the axial course along the direction 124, the bar 78a is fixed with respect to an adjacent bar 76i or 762, while in this area it has no fixation to the other opposite bar.

By way of example only, the directions 122a and 122b can be arranged parallel to the y-direction, while the direction 124 can be arranged perpendicular thereto and parallel to the x-direction, for example in the MEMS 20 from FIG. 2. If the daily layer arrangement 130 is used at least as part of the active structure 26 of a MEMS described herein, the corresponding MEMS can be provided with an opening in the layer structure and can be _{movably arranged in the plane 14 2 in} order to create an interaction structure to interact with a fluid in the cavity, to drive, so that a movement of the interaction structure is causally related to a movement of the fluid through the at least one opening. The active structure is then mechanically coupled to the interaction structure and configured so that an electrical signal at an electrical contact of the active structure or the movable layer arrangement is causally related to a deformation of the active structure and the movable layer arrangement, where the deformation of the active structure and the movable layer arrangement is causally related to the movement of the fluid, for example because of direct contact with the fluid or indirect contact, for example via the interaction structure.

As shown in FIG. 13a, the movable layer arrangement 130 can be formed with multiple curves in different directions along the axial course parallel to direction 124. For example, each of the bar elements can be bent or curved according to a zigzag pattern and the adjacent bars have a substantially parallel course to one another.

The spacers or discrete areas 78ai, 78a ₂ , 78bi and 78b ₂ can be arranged, for example, on an outside of a change in curvature of the axial course. For example, the movable layer arrangement 130 is curved in the area of the discrete area 78ai in order to then point in the direction 122a, while in an area of the discrete area 78bi there is another change of direction in the direction the direction 122b takes place. The fixation can take place on the respective outside of the movable layer arrangement in the area of the change in curvature.

13b shows a schematic plan view in which a plurality of N discrete areas between the bars 76i and 76a and a plurality of M discrete areas between the bars 76 ₂ and 76a are provided along the axial course parallel to the direction 124. Possibly, but not necessarily, N corresponds to the number M or is different therefrom. A number can be chosen based on a desired overall length of the structure along x.

The total length of the actuator, i.e. That is, the movable layer structure can be limited when used as an active element by the clearance (distance to the cover / handle wafer) and the associated vertical pull-in (in which the actuator touches the cover or handle layer) . As an active drive, the overall length is limited or influenced by the lateral pull-in in individual cells. Comparatively short actuators can result in a variant that is clamped in on one side, here there are at least only 2 unit cells, which enables a large range of values.

The total length of a movable layer structure can, for example, as an actively sound-generating actuator, be in a range of at least 50 μm and, for example, be at most 5 mm, a range around 2.5 mm and a configuration clamped on both sides is preferred, although other values can also be implemented , for example through additional spacer elements that prevent vertical pull-in. A corresponding limitation can also be less critical in a sensory application.

A total length as a drive plane can, for example, be in a range of at least 200 μm and at most 10 mm, whereby a configuration of the actuator clamped on both sides is preferred and a central connection is implemented, for example in an area 78ci from FIG. 14c. Preferably, lengths in a range between 3 mm -4 mm are implemented. However, a central connection is not always necessary. Further examples of configurations clamped on both sides are shown in FIGS. 14e and 14f. The central connection can be preferred, for example, if the actuator is used as a drive element, as in FIG. 14e. If it is used itself as an active element for generating sound, that is to say provides direct contact with the fluid, then it may be preferable to choose a point-symmetrical actuator, as shown in FIG. 14f. As an active sound-generating actuator, longer cells can lead to greater deflections. Therefore, a smaller number of discrete areas are preferred for such an application in such an area. As a drive element, the total length can be greater. However, cells that are too long can limit the voltage. This can be optimized by the number of cells. The number of cells can be chosen depending on the chosen length of the unit cell.

When the active layer structure is used as an actively sound-generating actuator, for example an actuator that interacts directly with the fluid, a number N or M of at least 2 and at most 100 can be selected, preferably a small number of at most 50, at most 10 or exactly 2.

When used as a drive element, for example for an interaction structure described here, the number of discrete areas can be at least 2 and at most 100, preferably at least 2 and at most 50, at least 2 and at most 10 and particularly preferably at least 2 and at most 4, depending on the overall length and Cell length.

An extension or dimension of a discrete area or isolation island along x can be at least 1 μm and at most 100 μm, a dimension of 15 μm is preferred.

The length of a unit cell along the x-direction can be viewed as the sum of 2 ^* length of the slopes + 1 ^* length of the isolation island. The length (along the diagonal direction) of such a slope (a cathetus in the triangle shown in FIG. 13b) can be at least 10 μm and at most 1,000 μm and is preferably approximately 250 μm. This design can also affect the offset between the discrete areas (length of a slope) and / or the offset of the unit cells, so that with such a configuration they can also be at least 10 pm and at most 1,000 pm.

A length of a unit cell, ie, a distance between the discrete areas along the x-direction, can be in a range of at least 20 pm and at most 2,200 pm, with values in a range of at least 450 pm and at most 550 pm are preferred. A height or dimension along the y-direction, ie, for example, a distance between the discrete areas 78a ₂ and 78bi, together with the length of an incline (offset between discrete areas) can result in the angle of a unit cell (angle of an incline to the horizontal direction) . This angle is greater than 0 ° and less than 90 °, preferably 2 °. For the preferred offset of the discrete areas of 250 pm, the height of the discrete area can preferably be 8 pm to 9 pm. The height is preferably selected in a range from greater than 0 to 500 μm.

A geometry of a geometric body of two discrete areas arranged between the same bars 76i / 76s or 762/763 as well as an intermediate section of the bar 76a in the center and / or inflection point of which can optionally be a discrete area that fixes the other pair of bars can be referred to as unit cell 126. For example, a unit cell 126i is formed from an exemplary triangle of the corner points of the discrete areas 78ai, 78a ₂ and 78bi, while a unit cell 128i can be formed from the corner points of another exemplary triangle of the discrete areas 78bi and 78b ₂ and 78a ₂ . A geometry of the unit cells can be set by means of the positions of the discrete areas and can influence the movement behavior, for example amplitude, linearity and / or force, of the movable layer arrangement 130.

In other words, FIGS. 13a and 13b show an exemplary embodiment of an alternative deflectable element 130. The connection to the surrounding substrate is not shown here, since this exemplary embodiment in the preferred exemplary embodiment involves a bilateral connection of the bars 76 to the surrounding substrate aims, that is, the movable layer arrangement can be firmly clamped on both sides.

By way of example, the geometry is formed from bars 76i to 763 arranged in a zigzag shape, it also being possible for more than three bars to be arranged. Exemplary embodiments can also have other geometries of the bars 76. For example, in connection with FIGS. 18a and 18b, a further possible geometry is shown which is based on circular segments. This means that the bars can be straight or curved in sections. The unit cells or unit cells 126 and / or 128 shown denote a segment consisting of discrete areas or isolation islands and bar segments. Different unit cells, such as unit cells 126i and 128i can also have different geometries, as shown, for example, in connection with FIGS. 14a to 14f. Embodiments are not limited to the arrangement of three bars, but can contain a plurality of bars. The discrete areas 78 can also be referred to as isolation islands or isolating spacers.

For a unit cell 128 which can cause a deflection in the direction 122b, segments of the bars 76 ₂ and 76 ₃ and two isolation islands, in particular adjacent isolation islands 78bi and 78b _2, are connected to one another. Further unit cells 128 are arranged in a lateral direction, for example along the direction 124, in such a way that adjacent unit cells 128 have a common isolation island 78b, as is shown, for example, for the unit cells 128i and 128 ₂ . Depending on the orientation of the actively electrostatically activated cell, different directions of deflection can result.

The active elements, bars, can be provided in pairs or in a higher number and in different numbers to reach the respective direction 122a or 122b. An asymmetry can be compensated by a circuit.

FIG. 14a is a schematic plan view of a movable layer assembly 130 accelerator as claimed embodiment, the, ..., I and 78b _j opposite to the movable layer arrangement of Fig. 13a, the isolation islands 78a, with i = 1 j = 1, each J having on the inner sides of the radii of curvature.

14b shows a schematic representation of a movable layer arrangement 130 ₂ , in which the discrete areas 78a and 78b _{j are arranged} on the outside of the radii of curvature of the curved course of the movable layer arrangement along the direction 124, that is, complementary to FIG. 14a and in accordance with the illustration according to FIG. 13a. The deflections shown are exemplary but not restrictive. In FIGS. 14a and 14b, the deflection is selected in order to show the influence of the position of the isolation islands 78 on the deflection and, by way of example, for a constant voltage occupancy. For example, it is assumed in FIG. 14a that + DC is applied to blaken 76i _{and -DC is applied to blaken 76 2} , while a control signal AC is applied to the intermediate bar 76a, which is also -DC by way of example . This can be achieved that only the gap between 76i and 76 _{3 is} active. Depending on the arrangement of the isolation islands, this specifies the direction of movement or the bending moment generated. Since only one half is active in such an exemplary control, the deflection is only in one direction 122a (FIG. 14a) or 122b (FIG. 14b, where the wiring is assumed to be complementary, ie the AC signal is + DC ) shown. Another form of movement can be achieved through other potentials or signals.

14c shows a schematic plan view of a movable layer arrangement 1303, which can be clamped on one side of the substrate 62. Optionally, an opposite end 132 can be freely movable. Alternatively, the movable layer arrangement 130a can also be clamped in on both sides.

The movable layer arrangement 13Ch can have one or more combinatorial discrete areas 78ci and 78C ₂ , at each of which a mechanical fixation of the elements 76i, 76 ₂ and 76a takes place with one another.

Optionally, the connecting elements or the discrete regions along a direction between the discrete regions, for example along the direction 124, can have a variable extent in the MEMS plane 14 ₂ and parallel to an axial course of the movable layer arrangement. For example, the discrete areas of FIG. 14c perpendicular to the direction 124 and parallel to the plane 14 ₂ or parallel to the x / y plane have a variable extent along the direction 124, which can be based on a trapezoid, for example. This means that the discrete areas can be trapezoidal. At the end 132, a discrete area can optionally also be provided, which can provide a fastening of the bars 76i, 76 ₂ and / or 76 _{3 to} one another.

14d shows a schematic representation of a movable layer arrangement 13U4, which is shortened _{compared to the movable layer arrangement 13U 3.} Alternative exemplary embodiments envisage implementing a longer movable layer arrangement along the direction 124.

14e shows a schematic view of a movable layer arrangement 130 according to an exemplary embodiment, which according to the movable layer arrangements 130 ₃ and 130 _{4 is made} longer along the direction 124 and, independently of this, is firmly clamped on both sides. 14f shows a schematic view of a movable layer arrangement 130e according to an exemplary embodiment, which is also firmly clamped on both sides.

One or more of the layer arrangements can have symmetries. For example, while the movable layer arrangement 31s can be formed axially symmetrical to an axis of symmetry 66 perpendicular to the direction 124, for example the movable layer arrangement 130 with respect to the combinatorial discrete area 78ci, which can for example denote a geometric center of the movable layer arrangement, point-symmetrically with respect to the other discrete Areas to be built up. In principle, any type of symmetry is possible.

In other words, the direction of deflection of a muscle cell can mainly depend on the arrangement of the isolation islands, for example “valley”, as implemented for example by the discrete areas 78ai, 78a ₂ and 78bi as well as 78b ₂ from FIG. 14a, or “mountain” as it is for example, implement the discrete areas of Figure 14b. A valley can be understood to be arranged on the inside of a corresponding radius of curvature, while a mountain can be understood to be an arrangement on the outside of a change of curvature or direction. This means that muscle cells that are electrically connected in the same way can be laid out with different deflection directions. The combination of the two possible positions via a connection piece with isolation islands in both strands (combinatorial discrete areas 78c, for example in FIG. 14c) or, for example, a course of valley / mountain / mountain / valley or mountain / valley / valley / mountain or mountain / Valley / mountain / valley / mountain / valley within an actuator clamped on both sides along the direction 124 allows a linear deflection in the middle of the actuator with a balanced circuit, as shown for example for FIG. 14f. The number and geometry of the unit cells used can differ in the exemplary embodiments. A structure described generally offers the possibility of providing a bilaterally clamped deflectable element with a linear characteristic which, in contrast to the BNED, is asymmetrical with respect to the centroid fiber ("balanced asymmetric" NED "-BA-NED). The linearity of the area swept by the deflectable element is given when the swept area of the bending line with the active strand or strands caused by direction 122a corresponds as closely as possible with the swept area caused by the active strand or strands along direction 122b. These displaced areas arise, for example, when the middle and one of the outer electrodes are the same Have electrical potential and the other electrode is grounded, as described, for example, in connection with FIGS. 14a and 14b. The electrical properties such as the operating point voltage or the gradient of the associated AC characteristic curve of the electrical control can be set via the geometry of the unit cells 126 and / or 128. For example, with longer unit cells, larger deflections can be achieved at comparatively lower voltages. A longer unit cell means, for example, a greater distance between the isolation islands along the direction 124. Furthermore, depending on the type of combination of unit cells 126 and 128, an actuator which is mirror-symmetrical about the center of the actuator (see FIG. 14e) or a point-symmetrical actuator (see FIG. 14f) results. The mirror symmetry has the advantage that the moments to the right and left of the connecting piece, for example 78ci in FIG. 14c, are in equilibrium. As a result, the individual unit cells 126 or 128 behave similarly. The point-symmetrical arrangement offers the advantage of using longer unit cells with the same overall length and thus increasing the deflection. Furthermore, the displaced areas, each with only one active strand, are the same size for this case. This ensures the linearity of the characteristic.

The connection of a deflectable element to the surrounding substrate 62 can consist of a fixed or resilient connection between substrate 62 and unit cell 126 or 128 or substrate 62 and isolation island / discrete area. The connecting element to the substrate can have the same or a different rigidity as the electrodes or isolation islands. The resonance frequency of the actuator can be increased by the resulting axial tension at the restraint, compared to the case without axial tension. Such an axial tension can be built up, for example, by combining different materials.

Furthermore, an element that is passive for the deflection can be introduced within the actuator in order to set the expansion stiffening. For example, a long connection piece 78c or a section with three straight, parallel electrodes.

BA-NED actuators can be used analogously to FIG. 6a and FIG. 6b for the construction of a muscle / deflectable element 26. Due to the linearity of the characteristic, they are also suitable as elements for direct sound generation analogous to the GEN1 A-NED (asymmetrical NED of the first generation) based loudspeakers written in WO 2018/193 109 A1. Technologically, these actuators offer the advantage that the electrical wiring can be carried out within the actuator level. Also, there will be no partitions required for the electrical signal routing between the actuators. This can increase the packing density of the actuators. In general, a BA-NED can be clamped on one or both sides through the choice of island positions (see Fig. 14c-f). Several zigzag strands put together in turn result in a BA-NED muscle, as shown in FIGS. 15 and 16, for example. If the same electrical potential difference is applied to the strands as a result of the selection of the wiring, as shown for example in FIG. 17, the cells block each other in their horizontal movement, which can cause a change in length in the horizontal direction.

For balanced operation, i.e. linear operation, the same electrostatic potential difference is generated on strings with the same topology. For this purpose, for example, a positive and a negative DC bias voltage can be combined with an AC signal or an AC signal can be combined with an inverted signal and a DC bias voltage. As a result, one half of the muscle (strands with the same cell topology) acts in one direction of deflection. This allows the muscle to be actively deflected in both directions. The restoring force is therefore the electrostatic force. The balanced behavior enables a higher linearity of the movement. This means that the movable layer arrangement can be designed to move a free end of the movable layer arrangement, for example end 132 (with or without discrete fixation) along two linearly independent directions, for example directions 122a / 122b on the one hand and direction 124 on the other.

The number of voltage signals required can also be reduced by grouping the strings. Further variants are to be selected accordingly as multiples of two strings with the same island offset. The voltage can be selected so that the potential difference, the signal (or the inverted signal) results in the same topology on all strings.

Other muscle areas of the same geometry can also be combined in order to enable a two-dimensional deflection of the muscle. For example, a muscle made from a “brick pattern” with a “brick pattern” rotated by 90 ° enables movement in both the horizontal and axial directions. The resistance element 24 can thus be moved along both axes in the plane below. Such configurations apply to all of the exemplary embodiments described herein.

15 shows a schematic view of a movable layer arrangement 150 according to an exemplary embodiment, the at least one fourth bar, in the example shown also has a fifth beam 76 ₄ and 76s. Instead of trapezoidal discrete areas, for example, and regardless of the number of bars selected, square cross-sections of the discrete areas can also be selected. A higher number of bars is also possible, for example at least 6, at least 7, at least 8, at least 10, at least 20 or more.

The discrete areas 78 of the movable layer arrangement can each be arranged in pairs for pairs of adjacent bars 76 ₄ and 76i, 76a and 76 ₂ or 76s and 76 ₂ differently along an axial course of the movable layer arrangement. This means that between some pairs, about 76 _{4/76 1} and 76 _{3/76 2,} the positions can coincide while they are different from other pairs of each other.

16 shows a schematic plan view of a movable layer arrangement 160 according to an exemplary embodiment, which can be structurally identical to the movable layer arrangement 150. Based on a described interconnection and / or discrete fixations 78 ₂ to 78s at one end 132 of the movable layer arrangement 160, the movable layer arrangement 160 can be shortened or lengthened along or in the opposite direction to the direction 124.

17 shows a schematic plan view of a movable layer arrangement 170 according to an exemplary embodiment. A movement along the directions 122a and / or 122b can be set by suitable selection of positions of the isolation regions 78.

According to the exemplary embodiment shown, the discrete regions 78 of the movable layer arrangement 170 can each be arranged mirror-symmetrically to a plane of symmetry along a neutral fiber of the movable layer arrangement. For example, the neutral fiber runs through the central bar 763, approximately along its center line. Layer arrangements described herein can form at least part of an actuator 26 of the MEMS described herein, but can also be formed independently thereof. MEMS described herein can be formed, for example, as a loudspeaker, microphone, ultrasound transducer, microdrive or micropump.

18a shows a schematic plan view of a movable layer arrangement 180 ₁ according to an exemplary embodiment, in which the bars 76 i to 76 ₃ are arranged in sections so as to be curved with respect to one another. 18b shows a schematic view of a further movable layer arrangement I8O2, in which the bars 76i, 762 and 763 are also curved in sections, but a position of the discrete areas 78 is regulated differently.

Embodiments are based on the knowledge that it makes sense for the generation of high sound pressures not to use actively deformable elements for sound generation or only to a small extent, but to provide them with passive elements. This offers the advantage that the deformable elements can be designed in such a way that deformation is ensured and passive elements are optimized in such a way that high sound pressures can be achieved. According to a first aspect, a muscle-like actuator is provided which is arranged in a drive plane and which is connected to passive elements in a further layer. This increases the sound pressure level compared to known concepts. Further aspects relate to actuators and / or movable layer arrangements that are clamped on both sides, with which gaps to the surrounding substrate at the freely oscillating end of the beam, which can cause fluid losses, are avoided. In this way it can be achieved that the movement of the bar remains free and is not restricted. Such is described, for example, for the movable layer arrangements described herein and also shown in FIGS. 5a and 5b. Another aspect can be used to drive the passive elements of the first aspect as an actuator. Because both aspects have the same task. However, the features of the second aspect can stand on their own without being associated with a passive element.

The exemplary embodiments described are distinguished by an increase in the sound pressure level compared to known concepts with a small or minimal chip area. A cost-efficient production of components based on semiconductor materials can thus be obtained together with a high to optimal utilization of the area of the underlying wafer. The object achieved with the present exemplary embodiments is thus to show solutions for how the chip volume can be used to generate a high sound pressure level or to be particularly sensitive. The core of exemplary embodiments is that the drive plane is separated from the sound generation plane. In this way, sound-generating elements can be optimally designed. The drive plane is also characterized in that the actuators have a high packing density and can therefore have a high force over the deflection area. Micromechanical components are required to translate electrical signals into mechanical effect or vice versa. In the case of the present deformable elements, a deformation of the element results on an electrical input signal. In this case the deformable element is an actuator. Equally, such deformable elements can also be used as sensors in that an electrical signal resulting from deformation of the deformable element can be tapped.

The deformable elements are bar-shaped actuators and are based on electrostatic, piezoelectric, magnetostrictive and / or thermomechanical operating principles.

Components are layer stacks that consist of at least one currency level, a structure level and a cover level. The motto level is characterized in that the actuators necessary to drive the deformable elements are arranged there. The respective layers are connected to one another using material-locking processes, for example bonding. This results in acoustically sealed spaces in the components. The layers have electrically conductive materials, for example doped semiconductor materials and / or metal materials. The active elements of a deformable element are formed by selective removal from the layers of the electrodes. Passive elements are, for example, similar to the passive elements just mentioned, removed from the layer or joined in a materially bonded manner.

Embodiments of the aspects described herein relate to:

1. Device

1.1. The actuator level is separated from the fluid interaction level / structure level

1.1.1. Advantage: higher packing density in the actuator level, which means that a higher force can be applied in the actuator level than before.

1.1.2. Higher packing density in the interaction level because no actuators are provided, which means that more fluid can be displaced per area

1 .2. Actuator level contains deflectable elements

1.3. In the preferred exemplary embodiment, deflectable elements are electrodes which are connected to one another via electrically insulating spacers.

1.4. Deflectable elements are connected to the surrounding substrate

1.5. Adjacent electrodes are exposed to different potentials so that they move towards or away from one another. 1.5.1. Adjustable force and deflection via the electrode geometry and number

1.6. The preferred exemplary embodiment for the arrangement of the deflectable elements enables an almost linear deflection behavior

1.6.1. two deflectable elements are symmetrically connected with a connecting link (Fig. 1)

1.7. Fluid interaction plane contains passive elements connected to the deflectable elements

1.8. Elements in the fluid interaction plane interact with a fluid and generate volume flow

1.9. In a preferred embodiment, passive elements are comb-like elements.

1.10. The comb-like resistance elements form cavities together with counter-elements that are firmly connected to the substrate

1.11. The movement of the resistance elements with respect to the counter-elements generates a volume flow of a fluid.

1.12. The fluid is conveyed in and out of the cavities through the lower and upper outlet openings in the handling and lid wafer

1.13. In exemplary embodiments, the resistance element can be connected to the substrate via connecting elements.

1.13.1. The geometry and topography of the connecting elements can be designed. This allows the resulting frequencies of the oscillating resistance elements to be influenced.

1.14. Structural level is much larger in its vertical orientation than the Ak tor level

1.15. The structural level can contain openings for connecting the cavities with openings in the lid and handling wafer, whereby the cavities are connected to the environment.

1.16. Another aspect is the use of coupling elements to control elastic resistance elements

1.16.1. Resistance elements are preferably connected to the substrate on both sides

1.16.2. Coupling elements transmit the movement of the actively deflectable to the elastic resistance elements

1.16.3. There are two groups of deflectable elements, coupling elements and resistance elements, which are operated in opposite directions. In other words, they move towards one another in a first time interval and away from one another in a subsequent second time interval. 1.17. Another aspect is the use of coupling elements, which, in contrast to 1.16, are also divided into groups. The basic principle is a stator shuttle arrangement.

1.17.1. A group consists of e.g. four elastic resistance elements, which are connected to a linearly operated actively deflectable element.

1.17.2. The group of elastic resistance elements and actively deflectable elements is enclosed by a border formed from a substrate. This border increases the rigidity of the component as a whole. Furthermore, the border is electrically coupled to the control and serves as a stator. In this exemplary embodiment, the shuttle is the actively deflectable resistance element

1.17.3. To form cavities, further boundaries are provided, which are arranged between the resistance elements.

1.17.4. The resistance elements convey fluid into and out of these cavities through openings in the lid and handling wafer

1.17.4.1. The openings are not arranged in the area of the actively deflectable elements, but to the side of it.

1.17.4.2. The openings can be arranged in the same way as in FIG. 5a.

1.18. Another aspect is the use of comb-like deflectable elements that are connected to a resistance structure. The principle corresponds to the stator shuttle principle.

1.18.1. The surrounding substrate is designed in a comb shape. This area has a length that corresponds to 40-80% of the length of a resistor element.

1.18.2. Comb-shaped deflectable elements which are connected to a resistance element engage in the comb-shaped substrate.

2. Device as an alternative deflectable element

2.1. Deflectable element with linear deflection behavior

2.1.1. can interact independently with a fluid,

2.1.2. but can also be used as a drive for the resistance structure

2.2. in embodiments connected on both sides to the surrounding substrate

2.2.1. The improvement to the application PCT / EP2018 / 078298 is that an actuator clamped on both sides does not have any acoustic short circuits, as is the case at the freely movable end of the actuator clamped on one side

2.3. The deflectable element is formed by stringing together mirror-symmetrical unit cells along a direction of extent of the deflectable element. 2.4. Unit cells consist of an area of bar-shaped electrodes connected with insulating spacer layers. The unit cells can include insulating layers over the entire length of the electrodes, which are not in direct mechanical or electrical contact with the electrodes.

2.5. The exemplary embodiment has three electrodes which, in a top view, have a mountain-valley-mountain-valley orientation.

2.5.1. The first unit cell is made up of two insulating spacers "mountain" and one insulating spacer "valley"

2.5.2. Second, adjacent unit cell arranged in a mirror-inverted manner

2.6. Embodiments have more than three electrodes (Fig. 12)

2.7. Adjacent electrodes have different potentials, which means that the deflection takes place.

2.8. The deflection characteristic can be adjusted by the arrangement of the insulating spacers

2.9. Embodiments also contain deflectable elements connected on one side to the substrate. This can cause a change in length

3. Process / method for displacing a fluid with the aid of the devices mentioned above

3.1. Devices can be used to generate pressure changes in the surrounding fluid (sound, loudspeaker) and to record pressure changes in the surrounding fluid (sound, microphone)

4. Embodiments can also be pumps or micro-drives.

Although some aspects have been described in connection with a device, it goes without saying that these aspects also represent a description of the corresponding method, so that a block or a component of a device is also to be understood as a corresponding method step or as a feature of a method step . Analogously to this, aspects that were described in connection with or as a method step also represent a description of a corresponding block or details or features of a corresponding device.

The above-described embodiments are merely illustrative of the principles of the present invention. It is to be understood that modifications and variations of the arrangements and details described herein will occur to other persons skilled in the art. Therefore, it is intended that the invention be limited by the scope of the following claims and not by the specific details, which were presented herein based on the description and the explanation of the exemplary embodiments, is limited.

Claims

Claims 1. MEMS having a layer structure (12) comprising; a cavity (16) arranged in the layer structure (12) which is fluidically coupled to an external environment of the layer structure (12) through at least one opening in the layer structure (12); an interaction structure (24) which is arranged movably along a plane direction in a first MEMS plane and in the cavity (16) and is designed to interact with a fluid in the cavity (16), wherein a movement of the interaction structure (24 ) is causally related to a movement of the fluid through the at least one opening; an active structure (26) arranged in a second MEMS plane arranged perpendicular to the plane direction, which is mechanically coupled to the interaction structure (24); and it is configured that an electrical signal (32) at an electrical contact of the active structure is causally related to a deformation of the active structure (26); wherein the deformation of the active structure (26) is causally related to the movement of the fluid. 2. MEMS according to claim 1, wherein the active structure (26) comprises an actuator structure which is designed to cause a deformation of the active structure (26) when an electrical signal is applied to the connection, which causes a movement of the interaction structure (24 ) and causes the movement of the fluid. 3. MEMS according to claim 2, wherein the active structure (26) comprises electrostatic, piezoe lectric or thermomechanical electrode structures. 4. MEMS according to one of the preceding claims, in which the active structure (26) has two actuation directions (26a, 26b) arranged opposite one another and is designed to move along an actuation direction in the second MEMS based on a first actuation signal -Level to- lead and based on a second actuation signal to execute a complementary movement opposite to the actuation direction in the second MEMS level. 5. MEMS according to claim 4, wherein the active structure (26) has a first actuator (26a) for converting the first actuation signal and a second actuator (26b) for converting the second actuation signal. 6. MEMS according to claim 5, wherein the first actuator (26a) and the second actuator (26b) are arranged opposite one another, and a coupling element for providing a mechanical coupling (28) with the interaction structure (24) between tween the first Actuator and the second actuator is arranged. 7. MEMS according to one of claims 4 to 6, in which the active structure (26) is designed to lengthen based on the first actuation signal in a first area parallel to the actuation direction and to shorten in a second partial area; and based on the second actuation signal to shorten in the first area parallel to the actuation direction and to lengthen in the second partial area. 8. MEMS according to one of the preceding claims, in which the active structure (26) has a plurality of electrode elements (46) arranged next to one another and grouped into electrode pairs, main sides of adjacent electrodes being arranged in pairs facing one another and in a central region (52) of the electrode elements are connected ver at discrete places by inner spacers (54). 9. MEMS according to claim 8, wherein the active structure (26) is designed to bring about a change in length based on an applied potential between electrode elements (46) of an electrode pair along a direction within the second MEMS plane, which is applied to the interaction structure (24) is transmitted. 10. MEMS according to one of the preceding claims, wherein the active structure (26) has a plurality of electrode pairs (48) each having a first and a second electrode element (46); and adjacent pairs of electrodes (48) in one Central area of the electrode elements (52) are connected at discrete points by inner spacer elements (54). 11. MEMS according to claim 10, wherein the first electrode element and the second electrode element of an electrode pair are mechanically fixed by discrete outer spacer elements (56) in an edge region of the electrode elements; or in which the first electrode element and the second electrode element of an electrode pair are mechanically fixed to an edge region with the layer structure (12); to adjust a distance between the first electrode element and the second electrode element. 12. MEMS according to claim 10 or 11, in which the first electrode element and the second electrode element are fixed at a distance of at least 0.01 pm and at most 200 pm. 13. MEMS according to one of claims 8 to 12, in which a distance set by the inner distance selemente has a value of at least 0.01 pm and at most 200 pm. 14. MEMS according to one of claims 8 to 13, in which an electrically insulating layer (58) is arranged between adjacent electrodes of an electrode pair. 15. MEMS according to claim 14, in which an electrically insulating layer (58) is suspended between outer spacer elements (56), the outer spacer elements (56) being arranged in an edge region of the electrodes of the electrode pair in order to mechanically fix the electrodes. 16. MEMS according to claim 14 or 15, in which a shape of the insulating layer (58) is adapted to a shape of the electrodes of the electrode pair which is deflected in advance in a passive state of the MEMS. 17. MEMS according to claim 16, wherein a first sub-layer (58a) of the insulating layer follows the pre-deflected shape of a first electrode (46i) of the electrode pair and a second sub-layer (58b) of the insulating layer follows the pre-deflected shape of a second electrode (462) of the Pair of electrodes follows; being a distance is variable between opposite main surfaces of the first partial layer and the second partial layer along an electrode course in the second MEMS plane from a first fastening area of the partial layers to a second fastening area of the partial layers. 18. MEMS according to one of claims 8 to 17, in which electrode pairs of the active structure (26) are arranged in at least one row (86) or in at least two rows running parallel to one another. 19. MEMS according to one of claims 8 to 18, wherein the first electrode pairs are arranged in a first row parallel to a first direction in the second MEMS plane in order to move the interaction structure (24) along a first direction in the first MEMS Effect level; and wherein second pairs of electrodes are arranged in a second row parallel to a second direction in the second MEMS plane to cause movement of the interaction structure (24) along a second direction in the first MEMS plane. 20. MEMS according to one of claims 8 to 19, in which the electrode pairs are formed as intermeshing electrode comb structures. 21. MEMS according to claim 20, wherein the pair of electrodes is assigned a third electrode with an electrode comb structure (114) to form a group of three electrodes, a middle one of the electrodes based on an alternating application of outer electrodes of the three electrodes in different ones Direction is deflectable conditions. 22. MEMS according to claim 20, wherein the pair of electrodes has a fixed comb electrode and a movable comb electrode arranged to be movable relative to the fixed comb electrode and is a first pair of comb electrodes; wherein the MEMS has at least a second pair of comb electrodes; wherein the movable comb electrodes of the first pair of comb electrodes and of the second pair of comb electrodes are mechanically coupled to one another and electrically isolated from one another and are designed to be acted upon at one point in time with mutually different electrical potentials; wherein the MEMS is designed to apply a time-variable potential to the stationary comb electrodes of the first pair and the second pair 23. MEMS according to one of claims 1 to 3, in which the active structure (26) has a plurality of movable layer arrangements which are mechanically fixed between a MEMS substrate and a coupling element (28) which is mechanically fixed to the interaction structure (24) , is switched; wherein each movable layer arrangement comprises a first bar (76i), a second beam (76 ₂₎ and an integrally arrange between the first beam and second beam th and discrete from the same at regions is electrically insulated fixed third Bal ken (76 _3), and formed in order to execute a movement along a movement direction in the second MEMS plane in response to an electrical potential between the first beam and the third beam or in response to an electrical potential between the second beam and the third beam in order to move the coupling element. 24. MEMS according to claim 23, in which between the coupling element and the substrate at least a first movable layer arrangement and a second movable layer arrangement are mechanically connected in series, gradients of a curvature change of the first and the second movable layer arrangement having alternating signs. 25. MEMS according to claim 23 or 24, wherein the plurality of movable layer arrangement is arranged symmetrically in the second MEMS plane. 26. MEMS according to one of claims 1 to 3, in which the active structure (26) has a movable layer arrangement which is mechanically connected between a MEMS substrate and a coupling element which is mechanically fixed to the interaction structure (24); wherein the movable layer arrangement has a first beam (76i), a second beam (76 _{2 ) and a third beam (76 3} ) which is arranged between the first beam and the second beam and is fixed electrically insulated from the same in discrete areas, and is formed, in order to execute a movement along a movement direction in the second MEMS plane in response to an electrical potential between the first beam and the third beam or in response to an electrical potential between the second beam and the third beam, to move the coupling element, the discrete areas (78) for fixing the first bar and the third bar on the one hand and the second bar and the third bar on the other hand being offset from one another along an axial course of the movable layer arrangement in the second MEMS plane are. 27. MEMS according to claim 26, in which the movable layer arrangement is formed curved several times in different directions along the axial course. 28. MEMS according to claim 27, in which the discrete regions are arranged on an outside of a change in curvature. 29. MEMS according to one of claims 26 to 28, in which each of the movable layer arrangements is firmly clamped on both sides. 30. MEMS according to one of claims 26 to 29, wherein the first bar with the second bar and the third bar are additionally connected to a combinatorial discrete area (78c). 31. MEMS according to one of claims 25 to 29, in which a discrete area along a direction between discrete areas of adjacent bars has a variable extent in the second MEMS plane and parallel to an axial course of the movable layer arrangement. 32. MEMS according to one of claims 26 to 31, in which the discrete areas point-symmetrically to a geometric center point of the movable layer arrangement or axially symmetrically to an axis of symmetry which runs perpendicular to an axial course of the movable layer arrangement in the second MEMS plane and the geometric center point cuts, are arranged. 33. MEMS according to one of claims 26 to 32, in which the movable layer arrangement has at least one fourth beam (764). 34. MEMS according to claim 33, in which the discrete areas of the movable layer arrangement are each arranged in pairs for pairs of adjacent bars differently along an axial course of the movable layer arrangement. 35. MEMS according to claim 33, in which the discrete areas of the movable layer arrangement are each arranged mirror-symmetrically to a plane of symmetry along a neutral fiber of the movable layer arrangement. 36. MEMS according to one of claims 26 to 35, in which the bars are curved in sections in sections between two successive discrete regions. 37. MEMS according to one of claims 26 to 35, wherein the first movable layer structures are arranged in a first row parallel to a first direction in the second MEMS plane in order to move the interaction structure (24) along a first direction in the first Effect MEMS level; and wherein the second movable layer structures are arranged in a second row parallel to a second direction in the second MEMS plane, in order to bring about a movement of the interaction structure (24) along a second direction in the first MEMS plane. 38. MEMS according to one of claims 26 to 28, wherein the movable layer arrangement is designed to move a free end (132) of the movable layer arrangement based on a control of the first, second and third bars along two linearly independent directions. 39. MEMS according to one of the preceding claims, in which the interaction structure (24) is formed in an electrically passive manner. 40. MEMS according to one of the preceding claims, in which a mechanical coupling (28) of the interaction structure (24) with the layer structure (12) has at most the same rigidity as a rigidity of the interaction structure (24). 41. MEMS according to one of the preceding claims, in which the interaction structure (24) is elastically coupled to the layer structure (12) by means of spiral spring elements (44). 42. MEMS according to one of the preceding claims, in which the interaction structure (24) is arranged without a suspension apart from a mechanical coupling to the active structure (26). 43. MEMS according to one of the preceding claims, in which a delimiting structure is arranged in the first MEMS level, which defines partial cavities (16a-16t) in the cavities (16), with fin structures of the interaction structure (24) in the partial cavities ( 16a-16t) are movably arranged. 44. MEMS according to claim 43, in which a fin structure in a partial cavity (16a-16t _{) at least partially separates a first partial cavity part (16ai-16t 2} ) and a second partial cavity part (16ar 16t ₂ ), based on the movement of the interaction structure (24) a volume of the first partial cavity part (16ai-1 t) is variable complementary to a volume of the second partial cavity part (16a 16t ₂ ). 45. MEMS according to claim 44, in which the first partial cavity part (16ai-16t ₂ ) is fluidically coupled to a first opening and the second partial cavity part (16ai-1 t) is fluidically coupled to a second opening. 46. MEMS according to claim 45, wherein the first opening and the second opening are arranged starting from the partial cavity (16a-16t) perpendicular to the plane direction or in the first MEMS plane. 47. MEMS according to claim 46, wherein the first opening and the second opening are arranged in the first MEMS plane and are fluidically connected to MEMS openings in cover layers of the layer structure (12) along a direction perpendicular to the plane direction. 48. MEMS according to one of the preceding claims, wherein the interaction structure (24) has a plurality of plate elements (36, 92) which are oriented parallel to one another in the first MEMS plane and perpendicular to the first MEMS plane and are arranged are connected to a MEMS substrate in opposite edge areas. 49. MEMS according to one of the preceding claims, in which the interaction structure (24) has a plurality of plate elements (36, 92) which are oriented parallel to one another in the first MEMS plane and perpendicular to the first MEMS plane, wherein the plate elements are mechanically coupled to one another to form plate groups in groups by means of connecting elements (5201 a / b). 50. MEMS according to claim 49, in which the different plate groups can be deflected relative to one another. 51. MEMS according to claim 49 or 50, which is designed to deflect in opposite directions plate elements of a first plate group and plate elements of a second plate group, the plate elements of which are arranged adjacent to one another and alternately. 52. MEMS according to one of the preceding claims, in which the interaction structure (24) is mechanically firmly connected to a MEMS substrate in an area facing away from the active structure (26) and is formed flexibly in order to be able to move in the event of a deflection of the active structure ( 26) to deform. 53. MEMS according to claim 52, in which a delimitation structure is arranged in the first MEMS level which defines partial cavities (16a-16t) in the cavity (16), flexible elements of the interaction structure (24) in the partial cavities (16a) 16t) are movably arranged in order to deform in the partial cavities (16a-16t). 54. MEMS according to claim 53, in which a flexible element in a partial cavity (16a-16t) at least partially separates _{a first partial cavity part (16ai-16t 2} ) and a second partial cavity part (16ai-16t _2); wherein, based on the movement of the interaction structure (24), a volume of the first partial cavity part (16aH6t ₂ ) is variable complementary to a volume of the second partial cavity part (16ai-16t ₂ ). 55. MEMS according to one of the preceding claims, in which the interaction structure (24) is coupled to the active structure (26) by a mechanical coupling which, along the plane direction, has a mechanical rigidity which is greater by a factor of at least 3, as a mechanical coupling of the interaction structure (24) with the layer structure (12). 56. MEMS according to one of the preceding claims, in which a coupling element mechanically firmly connects the active structure (26) to the interaction structure (24) and sets a distance (34) between the active structure (26) and the interaction structure (24). 57. MEMS according to claim 56, in which the distance (34) is at least 0.1 pm and at most 20 pm. 58. MEMS according to claim 56 or 57, in which an electrically insulating material is arranged in a region of the spacing. 59. MEMS according to one of claims 56 to 58, in which a mechanical rigidity of the coupling element corresponds to a mechanical rigidity of the active structure (26) and / or the interaction structure (24) along the plane direction; or is less than the mechanical rigidity of the active structure (26) and / or the interaction structure (24). 60. MEMS according to one of the preceding claims, which is formed as a loudspeaker, microphone, ultrasonic transducer, a micro-drive or micro-pump. 61. MEMS with a layer structure (12), comprising: a cavity (16) arranged in the layer structure (12); a movable layer arrangement arranged in the cavity (16) comprising a first bar, a second bar and a third bar which is arranged between the first bar and the second bar and is fixed electrically insulated therefrom in discrete regions; wherein the movable layer arrangement is designed to perform a movement along a direction of movement in a substrate plane in response to an electrical potential between the first beam and the third beam or in response to an electrical potential between the second beam and the third beam; wherein the discrete areas for fixing the first bar and the third bar on the one hand and the second bar and the third bar on the other hand are arranged offset to one another along an axial course of the movable layer arrangement. 62. MEMS according to claim 61, wherein the cavity (16) is coupled to an external environment of the layer structure (12) 61 through at least one opening in the layer structure (12), and which further comprises: one in a first MEMS plane and in the cavity (16) along a plane direction movably arranged interaction structure (24), which is designed to interact with a fluid in the cavity (16), a movement of the interaction structure (24) with a movement of the fluid through the at least one opening is causally related; wherein the movable layer arrangement is part of an active structure (26) which is arranged in a second MEMS plane perpendicular to the plane direction, the active structure (26) being mechanically coupled to the interaction structure (24); and is configured that an electrical signal at an electrical contact of the active structure (26) with a deformation of the active structure (26) and the movable Layer arrangement is causally related; wherein the deformation of the active structure (26) and the movable layer arrangement is causally related to the movement of the fluid. 63. A method for displacing a fluid comprising the following step: Operating a MEMS according to one of the preceding claims.