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EP4055629A4 - RELATED MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF - Google Patents

RELATED MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF Download PDF

Info

Publication number
EP4055629A4
EP4055629A4 EP20942180.9A EP20942180A EP4055629A4 EP 4055629 A4 EP4055629 A4 EP 4055629A4 EP 20942180 A EP20942180 A EP 20942180A EP 4055629 A4 EP4055629 A4 EP 4055629A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
methods
memory devices
related memory
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20942180.9A
Other languages
German (de)
French (fr)
Other versions
EP4055629A1 (en
Inventor
Raghuveer S. Makala
Johann Alsmeier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Technologies LLC
Original Assignee
SanDisk Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/913,717 external-priority patent/US11903218B2/en
Priority claimed from US16/913,766 external-priority patent/US11538817B2/en
Application filed by SanDisk Technologies LLC filed Critical SanDisk Technologies LLC
Publication of EP4055629A1 publication Critical patent/EP4055629A1/en
Publication of EP4055629A4 publication Critical patent/EP4055629A4/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
EP20942180.9A 2020-06-26 2020-12-30 RELATED MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF Pending EP4055629A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/913,717 US11903218B2 (en) 2020-06-26 2020-06-26 Bonded memory devices and methods of making the same
US16/913,766 US11538817B2 (en) 2020-06-26 2020-06-26 Bonded memory devices and methods of making the same
PCT/US2020/067428 WO2021262239A1 (en) 2020-06-26 2020-12-30 Bonded memory devices and methods of making the same

Publications (2)

Publication Number Publication Date
EP4055629A1 EP4055629A1 (en) 2022-09-14
EP4055629A4 true EP4055629A4 (en) 2024-02-14

Family

ID=79281688

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20942180.9A Pending EP4055629A4 (en) 2020-06-26 2020-12-30 RELATED MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

Country Status (4)

Country Link
EP (1) EP4055629A4 (en)
KR (1) KR102707979B1 (en)
CN (1) CN114730764A (en)
WO (1) WO2021262239A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009031387A1 (en) * 2007-09-06 2009-03-12 Fuji Electric Holdings Co., Ltd. FERROMAGNETIC TUNNEL JUNCTION ELEMENT HAVING (Fe, Co, Ni)SiB FREE LAYER
US20090147392A1 (en) * 2007-12-05 2009-06-11 Commissariat A L'energie Atomique Magnetic element with thermally-assisted writing
US20160380185A1 (en) * 2014-03-13 2016-12-29 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2943914B2 (en) * 1997-02-19 1999-08-30 日本電気株式会社 Semiconductor device and manufacturing method thereof
JPH11220103A (en) * 1998-01-30 1999-08-10 Toshiba Corp Semiconductor storage device and its manufacture
JP4058971B2 (en) * 2001-03-26 2008-03-12 セイコーエプソン株式会社 Ferroelectric memory and electronic equipment
KR100892967B1 (en) * 2004-07-22 2009-04-10 니폰덴신뎅와 가부시키가이샤 Bistable Resistance Value Acquisition Device, Manufacturing Method Thereof, Metal Oxide Thin Film, and Manufacturing Method Thereof
KR100612867B1 (en) * 2004-11-02 2006-08-14 삼성전자주식회사 Resistive memory device having probe array and manufacturing method thereof
JP2007081112A (en) * 2005-09-14 2007-03-29 Matsushita Electric Ind Co Ltd Ferroelectric memory device and manufacturing method thereof
EP1845567A1 (en) * 2006-04-11 2007-10-17 STMicroelectronics S.r.l. Phase-change memory device and manufacturing process thereof.
CN101789490B (en) * 2010-01-28 2012-09-05 复旦大学 Ferroelectric oxide/semiconductor composite film diode resistance change memory
US10665695B2 (en) * 2012-04-09 2020-05-26 Monolithic 3D Inc. 3D semiconductor device with isolation layers
JP2014229758A (en) * 2013-05-22 2014-12-08 ソニー株式会社 Semiconductor device and manufacturing method of the same
JP6062552B2 (en) * 2014-03-17 2017-01-18 株式会社東芝 Nonvolatile storage device
US9633724B2 (en) * 2014-07-07 2017-04-25 Crossbar, Inc. Sensing a non-volatile memory device utilizing selector device holding characteristics
US20160064391A1 (en) * 2014-08-26 2016-03-03 Qualcomm Incorporated Dynamic random access memory cell including a ferroelectric capacitor
JP6367152B2 (en) * 2015-06-08 2018-08-01 東芝メモリ株式会社 Storage device
US20170345831A1 (en) * 2016-05-25 2017-11-30 Micron Technology, Inc. Ferroelectric Devices and Methods of Forming Ferroelectric Devices
KR20180134121A (en) * 2017-06-08 2018-12-18 에스케이하이닉스 주식회사 Resistance Change Memory Device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009031387A1 (en) * 2007-09-06 2009-03-12 Fuji Electric Holdings Co., Ltd. FERROMAGNETIC TUNNEL JUNCTION ELEMENT HAVING (Fe, Co, Ni)SiB FREE LAYER
US20090147392A1 (en) * 2007-12-05 2009-06-11 Commissariat A L'energie Atomique Magnetic element with thermally-assisted writing
US20160380185A1 (en) * 2014-03-13 2016-12-29 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2021262239A1 *

Also Published As

Publication number Publication date
CN114730764A (en) 2022-07-08
WO2021262239A1 (en) 2021-12-30
KR102707979B1 (en) 2024-09-23
EP4055629A1 (en) 2022-09-14
KR20220088472A (en) 2022-06-27

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Owner name: SANDISK TECHNOLOGIES, INC.