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EP3764169B1 - Verfahren zum abschnittsweisen satinieren einer uhrenkomponente aus silizium - Google Patents

Verfahren zum abschnittsweisen satinieren einer uhrenkomponente aus silizium Download PDF

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Publication number
EP3764169B1
EP3764169B1 EP19185364.7A EP19185364A EP3764169B1 EP 3764169 B1 EP3764169 B1 EP 3764169B1 EP 19185364 A EP19185364 A EP 19185364A EP 3764169 B1 EP3764169 B1 EP 3764169B1
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EP
European Patent Office
Prior art keywords
etching
silicon surface
silicon
sacrificial layer
layer
Prior art date
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EP19185364.7A
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English (en)
French (fr)
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EP3764169A1 (de
Inventor
Rémy FOURNIER
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Patek Philippe SA Geneve
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Patek Philippe SA Geneve
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Priority to EP19185364.7A priority Critical patent/EP3764169B1/de
Publication of EP3764169A1 publication Critical patent/EP3764169A1/de
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    • GPHYSICS
    • G04HOROLOGY
    • G04BMECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B19/00Indicating the time by visual means
    • G04B19/04Hands; Discs with a single mark or the like
    • G04B19/042Construction and manufacture of the hands; arrangements for increasing reading accuracy
    • GPHYSICS
    • G04HOROLOGY
    • G04BMECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B13/00Gearwork
    • G04B13/02Wheels; Pinions; Spindles; Pivots
    • GPHYSICS
    • G04HOROLOGY
    • G04BMECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B15/00Escapements
    • G04B15/14Component parts or constructional details, e.g. construction of the lever or the escape wheel
    • GPHYSICS
    • G04HOROLOGY
    • G04BMECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00Mechanisms for stabilising frequency
    • G04B17/04Oscillators acting by spring tension
    • G04B17/06Oscillators with hairsprings, e.g. balance
    • G04B17/066Manufacture of the spiral spring
    • GPHYSICS
    • G04HOROLOGY
    • G04BMECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B19/00Indicating the time by visual means
    • G04B19/06Dials
    • G04B19/12Selection of materials for dials or graduations markings
    • GPHYSICS
    • G04HOROLOGY
    • G04DAPPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
    • G04D3/00Watchmakers' or watch-repairers' machines or tools for working materials
    • G04D3/0074Watchmakers' or watch-repairers' machines or tools for working materials for treatment of the material, e.g. surface treatment

Definitions

  • the present invention relates to a method for roughening a silicon surface in places. It relates more particularly to a method for roughening in places a silicon surface of a wafer in which a watch component will then be micro-machined or, alternatively, for roughening in places a silicon surface of the watch component itself or of the blank of this one.
  • a surface is said to be rough when it has an irregular relief comprising hollows and peaks, these hollows, or craters, having a depth ranging from a hundred nanometers to one micrometer.
  • Crystalline silicon is opaque and reflects light. Its appearance is that of a dark gray metal. This shade can give a somewhat austere appearance to parts made of silicon. In order to remedy this drawback and to give a somewhat more cheerful appearance to these components, it has been proposed to coat their surface with a thin layer of transparent dioxide. Indeed, this layer of silicon dioxide is the scene of light interference phenomena accompanied by the appearance of iridescent colors. The latter have the particularity of being dependent on the angle of observation. Components that feature such rainbow-colored surfaces are highly valued. The fact remains that a need remains for those skilled in the art to have a method allowing them to work on the appearance of the surfaces of watchmaking components in silicon, in a way that makes it possible to confer on each model of timepieces a truly unique personality.
  • An object of the present invention is to remedy the problems of the prior art which have just been explained.
  • the present invention achieves this and other objects by providing a method for spot-etching a silicon surface which is in accordance with appended claim 1.
  • step (a) of the method of the invention the places of the silicon surface which will be roughened are first delimited by producing an etching mask comprising openings.
  • a sacrificial layer of resin is deposited on the etching mask and inside its openings.
  • the production of the sacrificial layer does not involve either exposure or annealing of the resin of the sacrificial layer.
  • the sacrificial resin layer is then attacked by deep reactive ion etching (usually designated by its English acronym "DRIE"), so as to transfer inhomogeneities from the sacrificial layer on the places to roughen the silicon surface.
  • DRIE deep reactive ion etching
  • Deep reactive ion etching is the most commonly used etching technique for micromachining silicon-based components. This technique is already described in particular in the patent document WO 94/14187 in the name of Robert Bosch GmbH. This document is incorporated by reference in the present description. Deep reactive ion etching makes it possible to etch nearly vertical flank profiles in a silicon-based substrate by applying a procedure that alternates the steps of depositing an inert passivation layer and plasma etching.
  • the steps of deposition of the passivation layer and those of etching all call for fluorinated compounds, so that they take place in the same chemical context. Each step lasts a few seconds, the passivation layer is formed over the entire surface of the substrate, so that the latter is protected against any subsequent etching. However, during the etching step which follows, the bombardment by ions which are accelerated vertically disintegrates the part of the passivation layer which is at the bottom of the profiles (but not that which covers the sides thereof). The bottom of the profiles is thus very quickly exposed to reactive etching.
  • deep reactive ion etching which occurs in step (c) of the process of the invention, is distinguished from other current etching processes by its highly anisotropic, almost unidirectional character.
  • One advantage of using the deep reactive ion etching technique is therefore that it makes it possible to transfer the inhomogeneities of the sacrificial layer to the substrate with high resolution and without attenuation. It is important to note that this advantage is not found with the other current techniques which have a lesser degree of anisotropy. Indeed, with these less anisotropic techniques, the considerable divergence which exists between the directions of Etching only allows the transfer of a strongly attenuated roughness onto the silicon surface.
  • the different embodiments of the invention make it possible to roughen in places, in identical or different ways, the surface of a silicon wafer in which a watchmaking component or, alternatively, to roughen in places one surface, or several surfaces, of said watchmaking component itself or of the blank thereof.
  • the wafer, the timepiece component, or its blank may or may not have been previously covered with a layer of SiO 2 .
  • the invention makes it possible to combine on the same plate, blank or component, two different effects, such as matte and shiny or polished and frosted, which offers new possibilities in the dressing.
  • the surfaces frosted in places correspond to surfaces visible from the outside of the timepiece.
  • the frosted surfaces are also preferably located in non-functional areas of the timepiece components, so as not to interfere with the timepiece mechanisms and to maintain optimum mechanical properties.
  • FIG. 1 illustrates an object (referenced 2) which comprises at least one silicon surface 4 which it is desired to roughen in places using the method of the invention.
  • object designates a silicon wafer. It will however be understood that in accordance with other variants (not illustrated), this term could alternatively designate a timepiece component based on silicon or the blank of such a component.
  • FIG 2 illustrates the object 2 following the production by photolithography of an openwork etching mask 6 on the silicon surface 4.
  • This mask 6 can be produced in any manner known to those skilled in the art. In particular by first depositing a layer of photosensitive resin on surface 4, and then structuring this layer by photolithography before subjecting it to annealing.
  • the layer of photoresist is a layer of AZ ® 9260 whose thickness is approximately 7 microns. It will however be understood that the resin can of course be of another type. Moreover, its thickness is obviously not necessarily 7 microns. The thickness of the resin layer is typically, but not necessarily, between 5 and 15 microns.
  • the sacrificial layer of resin generally has a thickness less than or equal to 5 microns, typically less than or equal to 3 microns.
  • the sacrificial layer 8 is produced with positive photosensitive resin of the AZ ® 1518 type. This particular resin is suitable for producing thin layers.
  • the resin can be applied with a spinner at 5000 revolutions/minute. This speed leads to the deposition of a thin layer whose thickness is approximately 1.8 microns.
  • the resin which forms the sacrificial layer 8 has been deposited, one passes to the subsequent etching step without having exposed or annealed the resin layer 8 beforehand.
  • FIG. 4 illustrates object 2 after the aforementioned etching step.
  • This etching step consists in attacking the layer of sacrificial resin 8 by deep reactive ion etching (DRIE).
  • DRIE deep reactive ion etching Table I below indicates the main parameters used in the present example to implement the DRIE etching.
  • the version of the DRIE process used in the present example is based on a cycle consisting of a step (designated by the acronym DEP) of forming a passivation layer, followed by two distinct steps (respectively designated by E1 and E2) plasma etching.
  • DEP step
  • E1 and E2 two distinct steps
  • a gas mixture formed of 4/5 C 4 F 8 and 1/5 O 2 is injected.
  • a first plasma produced from SF 6 is used.
  • the function of this first plasma is to disintegrate the part of the passivation layer which is at the bottom of the profiles.
  • the second etching step E2 uses a plasma formed from a mixture of SF 6 and C 4 F 8 .
  • the function of this second plasma is to hollow out the profiles by reactive etching of the bottom of the latter.
  • the DRIE etching step continues long enough to transfer inhomogeneities from the sacrificial layer 8 to the places to be roughened (or in other words rough) of the silicon surface 4.
  • the etching continues at least until emerging orifices have been created through the sacrificial layer 8. It is possible, for example, to identify this first pivotal moment by detecting the presence of silicon atoms, or of compounds comprising silicon, in the reactor in which the DRIE etching is implemented. At the other extreme, the etching should not be continued after the sacrificial layer 8 has been completely consumed.
  • this second pivotal moment is concomitant with the disappearance of the chemical species characteristic of the sacrificial layer, which were present in the reactor until then.
  • the person skilled in the art will be able to determine, for example by timing, the moment when he wishes to stop the etching.
  • the moment that a person skilled in the art will choose for stopping the etching will be situated in the interval between the first and second pivotal moments mentioned above.
  • the figure 5 illustrates the object 2 following a final step consisting in eliminating the etching mask 6, the resin residues from the sacrificial layer 8, as well as other residues left by the passivation steps.
  • the removal of the resin and of the C 4 F 8 residues is carried out using an O 2 plasma.
  • the silicon surface which it is desired to roughen by application of the method is the surface of a wafer (reference 12). It will however be understood that in accordance with other variants (not illustrated) of this second mode of implementation, the surface in question could be that of a timepiece component based on silicon or that of the blank of such a component. .
  • the silicon body of the wafer 12 is coated on all sides with a layer of silicon dioxide (SiO 2 ) 15 whose thickness is about 0.8 micron.
  • layer 15 may for example have been formed on wafer 12 by thermal oxidation of silicon at a temperature between 900°C and 1200°C.
  • the etching mask is a resin mask, and it can be produced conventionally, for example with photosensitive resin of the AZ ® 1518 type.
  • the resin can be applied with a spinner at 4000 revolutions/minute so as to deposit a layer whose thickness is approximately 2.6 microns.
  • the layer of resin deposited by photolithography is then structured before subjecting it to annealing.
  • the step whose result is illustrated in the figure 7 consists in etching the layer of SiO 2 through the openings of the resin mask 16, so as to structure it and make an etching mask of it.
  • RIE reactive ion etching
  • FIG 8 illustrates wafer 12 after removal of resist mask 16. This removal can be accomplished in a number of ways known to those skilled in the art, and it will further be understood that it could just as easily occur later in the process.
  • the oxide layer 15 which had been structured during the previous step is now in a position to serve as an etching mask capable of withstanding the DRIE process which will be implemented during a subsequent step.
  • There figure 8 still shows a new sacrificial layer (referenced 18) which covers the SiO 2 etching mask 15, as well as the silicon exposed through the openings of the mask 15.
  • the sacrificial layer 18 can be made with AZ ® 1518 type resin.
  • the resin can be applied using a spinner 5000 revolutions/minute, so as to form a thin layer whose thickness is approximately 1.8 microns.
  • the etching step aims to create inhomogeneities in the sacrificial layer 18 and to transfer the latter to the places of the silicon surface which it is desired to roughen.
  • This step can be implemented in the same way as what has already been explained above in relation to the figure 4 from the first example.
  • the DRIE etching step continues long enough to transfer inhomogeneities from the sacrificial layer 18 to the places to be roughened on the silicon surface, so that said places are roughened according to the degree of roughening desired.
  • FIG 10 illustrates the wafer 12 after the resin residues of the sacrificial layer 18 and the C 4 F 8 residues left by the passivation steps have been eliminated.
  • residue removal can be achieved using an O2 plasma.
  • the process step whose result is illustrated in figure 11 consists of the elimination of all the SiO 2 which covers the wafer 12. In a known way, this step can be implemented in the form of a wet etching with BHF.
  • FIG 12 is a photographic view showing the upper face of a silicon wafer whose surface has been roughened in places by applying one or the other of the two exemplary embodiments of the invention which have been described so far .
  • the areas of the silicon surface which have been roughened by the process are perfectly visible in the photograph.
  • watchmaking components eg, hairsprings, hands, anchors, wheels, dials, etc.
  • FIG. 13 illustrates the wafer 12 whose silicon surface has previously been roughened in places in accordance with the second mode of implementation which has been described above.
  • FIG. 13 illustrates the wafer 12 following the formation of a new openwork etching mask 20 on its upper face.
  • This new mask 20 can be produced in a conventional manner, for example by first depositing a layer approximately 7 microns thick of photosensitive resin of AZ ® 9260.
  • FIG. 14 shows the wafer 12 after the implementation of the DRIE etching to cut the wafer 12 into several pieces. It is worth specifying that the cutting of a wafer by DRIE etching is already known as such. Moreover, traditional settings are preferably used for the implementation of this etching. It will be understood that at least some of the pieces represented schematically in the figure 14 , are in fact watch components or at least drafts of such components.
  • the figures 13 and 14 describe the etching of a face of a wafer by DRIE after the surface of the latter has been roughened in places using the method of the invention.
  • at least one watchmaking component blank in this case the blank of a hairspring
  • This third exemplary embodiment of the method of the invention will be described with reference to the figures 20 to 23 appended, which are schematic views in vertical section which illustrate the blank of a watchmaking component in silicon at four successive instants of the implementation of a method.
  • THE figures 17 to 19 are schematic views in vertical section which constitute three successive snapshots showing the production of the blank of a watchmaking component in silicon from an SOI wafer.
  • FIG 17 illustrates the wafer SOI (silicon on insulator) referenced 22. Conventionally, this wafer consists of two layers of silicon and a layer of silicon dioxide sandwiched between the layers of silicon.
  • FIG 17 illustrates the wafer 22 following the production of an openwork etching mask 26 by photolithography on the upper face of the wafer 22.
  • the mask 26 can be produced in a conventional manner. For example, by proceeding in the manner described above in relation to the figure 13 .
  • FIG 18 illustrates the SOI 22 wafer after the top silicon layer has been etched to its full thickness (about 120 microns) by conventional DRIE etching.
  • FIG 19 illustrates the SOI wafer 22 after removal of the etching mask 26.
  • the dissolution of the mask 26 can be obtained for example by immersing the SOI wafer 22 for a few hours in a KOH solution.
  • a layer of silicon dioxide 24 completely covers the surfaces of the SOI wafer 22 and of the watch component blank which is formed in its upper silicon layer.
  • the thickness of the SiO 2 layer is around 0.8 micron. It will be understood that the layer of dioxide 24 was formed after the removal of the etching mask 26.
  • the layer of dioxide may have been formed on the wafer 22, for example, by thermal oxidation at a temperature between 900°C and 1200°C.
  • THE figures 20 to 23 are schematic views in vertical section illustrating four successive instants of the third particular exemplary embodiment of the invention.
  • this third embodiment makes it possible to roughen the surface of a timepiece component or of the blank of such a component in places; the component or blank having first been cut from a wafer.
  • the method is implemented to etch at least in places the watch component blank, the production of which by micro-machining the SOI wafer (reference 22) has just been described in relation to the figures 17 to 19 .
  • FIG 20 illustrates the SOI 22 wafer, as well as the timepiece component blank which is formed in the upper layer of the latter, after the part of the layer 24 of silicon dioxide which covered the upper face of the blank has been removed.
  • directional reactive ion etching directional ion etching (directional RIE) was used so as to remove the silicon dioxide only on the upper face.
  • the figure 21 illustrates the SOI wafer 22 after the deposition of a photoresist layer 28 completely covering the blank.
  • the resin can for example be of the AZ ® 1518 type. It can be applied with a spinner at a speed of 4000 revolutions/minute so that the thickness of the layer 28 is approximately 2.6 microns.
  • FIG 22 illustrates the SOI wafer 22 after the production of an openwork mask by structuring the resin layer 28.
  • the structuring of the layer 28 is carried out by photolithography by implementing RIE etching. It will be understood that the openings of the mask are arranged so as to expose only the surfaces to be roughened.
  • FIG 22 again shows a sacrificial layer 30 which was then deposited on the resin layer 28 and in the openings of the latter.
  • the sacrificial layer 30 can for example be produced by applying photosensitive resin of the AZ ® 1518 type using a spinner at 5000 rpm.
  • FIG 23 illustrates the SOI wafer 22, as well as the watch component blank which is formed in the upper layer of the latter, after the transfer by DRIE etching of inhomogeneities of the sacrificial layer 30 on the places to be etched of the blank.
  • the resin residues of the openwork mask 28 and of the sacrificial layer 30, as well as the C4F8 residues left by the passivation steps have been eliminated.
  • the SiO 2 which covered the side faces of the blank has also been eliminated.
  • the watch component blank can finally be detached from the rest of the SOI wafer 22.
  • the SOI wafer and the blank are immersed in a bath which contains a chemical agent which attacks the silicon dioxide while sparing the silicon.
  • a chemical agent which attacks the silicon dioxide while sparing the silicon.
  • BHF buffered hydrofluoric acid

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Micromachines (AREA)

Claims (7)

  1. Verfahren zum stellenweisen Mattieren einer Siliziumfläche (4) einer Uhrenkomponente, wobei das Verfahren die folgenden Schritte umfasst:
    a) Herstellen einer durchbrochenen Ätzmaske (6; 15; 28) auf der Siliziumfläche, derart dass die zu mattierenden Stellen der Fläche freiliegen;
    b) Aufbringen einer Opferschicht (8; 18; 30) aus Harz auf den freiliegenden Stellen der Fläche und auf der Ätzmaske, wobei die Opferschicht ohne Freilegen des Harzes und Ausglühen hergestellt wird;
    c) Angreifen der Opferschicht aus Harz durch reaktives Ionentiefenätzen (DRIE), Fortsetzen des Schritts c) während einer Dauer, die ausreicht, um die Inhomogenitäten der Opferschicht auf die zu mattierenden Ausdehnung der Siliziumfläche zu übertragen, derart dass die Ausdehnung rau gemacht wird, indem ihr ein unregelmäßiges Relief verliehen wird, das Höhlungen und Spitzen umfasst, wobei diese Höhlungen oder Krater eine Tiefe aufweisen, die von etwa einhundert Nanometern bis zu einem Mikrometer reicht.
  2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass der Schritt (c) durchgeführt wird, während die Temperatur (Temp) der Siliziumfläche über die Umgebungstemperatur ansteigen gelassen wird.
  3. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass der Schritt (c) durchgeführt wird, während die Temperatur (Temp) der Siliziumfläche auf über 30 °C ansteigen gelassen wird.
  4. Verfahren nach einem der Ansprüche 1, 2 und 3, dadurch gekennzeichnet, dass der Schritt (c) durchgeführt wird, während die Temperatur (Temp) der Fläche des Siliziums bis zu dem Punkt ansteigen gelassen wird, an dem die Opferschicht (8; 18; 30) auf ungleichmäßige Art brennt, bis diese vollständig abgebrannt ist.
  5. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der Schritt (c) durch Liefern einer Leistung (LF Platen) von höher als 40 Watt zum Beschleunigen der Ionen in der Richtung senkrecht zur Siliziumfläche während der Passivierungsschritte (DEP) durchgeführt wird.
  6. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der Schritt (c) die folgenden Teilschritte umfasst:
    i. Angreifen der Opferschicht (8; 18; 30) und/oder der Siliziumfläche durch die Durchbrechungen der Maske (6; 15; 28) durch reaktives Ionenätzen, derart dass in der Opferschicht und/oder der Siliziumschicht gegraben wird;
    ii. Aufbringen einer chemisch inerten Passivierungsschicht auf den durch Ätzen während des vorhergehenden Schritts freigelegten Flächen;
    iii. Angreifen der Passivierungsschicht durch die Durchbrechungen der Maske durch reaktives Ionenätzen, derart dass die Opferschicht und/oder die Siliziumfläche am Boden der während des vorhergehenden Teilschritts (i) vertieften Höhlungen freigelegt werden bzw. wird;
    iv. Wiederholen der Ausführung einer Folge von Teilschritten, welche die Schritte (i), (ii) und (iii) umfassen, bis zum Ende des Schritts (c) .
  7. Uhrenkomponente, die eine Siliziumfläche umfasst, wobei die Fläche stellenweise mittels des Verfahrens nach einem der Ansprüche 1 bis 6 mattiert wurde.
EP19185364.7A 2019-07-10 2019-07-10 Verfahren zum abschnittsweisen satinieren einer uhrenkomponente aus silizium Active EP3764169B1 (de)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11970780B2 (en) * 2021-12-30 2024-04-30 Rubattel & Weyermann S.A. Method for manufacturing appliques on a dial
WO2025061309A1 (fr) * 2023-09-21 2025-03-27 Richemont International Sa Procédé de fabrication de composants horlogers en silicium

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
FR2901635A1 (fr) * 2006-06-09 2007-11-30 Commissariat Energie Atomique Dispositif de connexion tridimensionnel dans un substrat
CH708654A2 (fr) * 2013-10-01 2015-04-15 Rado Montres Sa Procédé de fabrication d'un élément céramique incrusté d'une pièce d'horlogerie et pièces d'horlogerie incluant de tels éléments.
CH708827A2 (fr) * 2013-11-08 2015-05-15 Nivarox Sa Pièce de micromécanique creuse, à plusieurs niveaux fonctionnels et monobloc en un matériau à base d'un allotrope synthétique du carbone.
EP3002635B8 (de) * 2014-09-29 2019-05-22 Richemont International SA Herstellungsverfahren eines federelements für uhrwerk oder anderes präzisionsinstrument
EP3109199B1 (de) * 2015-06-25 2022-05-11 Nivarox-FAR S.A. Werkstück auf siliziumbasis mit mindestens einer fase, und sein herstellungsverfahren
FR3046682B1 (fr) * 2016-01-12 2018-02-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'un ecran muni de microstructures retroreflechissantes

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11970780B2 (en) * 2021-12-30 2024-04-30 Rubattel & Weyermann S.A. Method for manufacturing appliques on a dial
WO2025061309A1 (fr) * 2023-09-21 2025-03-27 Richemont International Sa Procédé de fabrication de composants horlogers en silicium
CH721146A1 (fr) * 2023-09-21 2025-03-31 Richemont Int Sa Procédé de fabrication de composants horlogers en silicium

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