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EP3665753A4 - High power laser grid structure - Google Patents

High power laser grid structure Download PDF

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Publication number
EP3665753A4
EP3665753A4 EP18843018.5A EP18843018A EP3665753A4 EP 3665753 A4 EP3665753 A4 EP 3665753A4 EP 18843018 A EP18843018 A EP 18843018A EP 3665753 A4 EP3665753 A4 EP 3665753A4
Authority
EP
European Patent Office
Prior art keywords
high power
grid structure
power laser
laser grid
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18843018.5A
Other languages
German (de)
French (fr)
Other versions
EP3665753A1 (en
Inventor
John Richard JOSEPH
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Optipulse Inc
Original Assignee
Optipulse Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optipulse Inc filed Critical Optipulse Inc
Publication of EP3665753A1 publication Critical patent/EP3665753A1/en
Publication of EP3665753A4 publication Critical patent/EP3665753A4/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0052—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode
    • G02B19/0057—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode in the form of a laser diode array, e.g. laser diode bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1025—Extended cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
EP18843018.5A 2017-08-11 2018-08-13 High power laser grid structure Pending EP3665753A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762543972P 2017-08-11 2017-08-11
PCT/US2018/046556 WO2019033120A1 (en) 2017-08-11 2018-08-13 High power laser grid structure

Publications (2)

Publication Number Publication Date
EP3665753A1 EP3665753A1 (en) 2020-06-17
EP3665753A4 true EP3665753A4 (en) 2021-04-21

Family

ID=65272675

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18843018.5A Pending EP3665753A4 (en) 2017-08-11 2018-08-13 High power laser grid structure

Country Status (5)

Country Link
EP (1) EP3665753A4 (en)
JP (1) JP7418328B2 (en)
AU (1) AU2018314281B2 (en)
CA (1) CA3072763A1 (en)
WO (1) WO2019033120A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7583266B2 (en) 2021-02-12 2024-11-14 日亜化学工業株式会社 Light-emitting device
GB2614300B (en) * 2021-12-23 2025-02-19 Toshiba Kk A photon source and method of fabricating a photon source
US20250062597A1 (en) 2023-08-17 2025-02-20 Ii-Vi Delaware, Inc. Semiconductor Laser Assembly with Thin Film Lithium Compound Waveguide
US12199132B1 (en) * 2024-05-08 2025-01-14 Aurora Operations, Inc. Manufacturing process for semiconductor optical device for lidar sensor system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140079088A1 (en) * 2009-12-19 2014-03-20 Trilumina Corporation System and method for combining laser arrays for digital outputs
EP3000157A1 (en) * 2012-04-20 2016-03-30 Trilumina Corporation Microlenses for multibeam arrays of optoelectronic devices for high frequency operation
US20160164261A1 (en) * 2009-02-17 2016-06-09 Trilumina Corp. Compact multi-zone infrared laser illuminator

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5978408A (en) * 1997-02-07 1999-11-02 Xerox Corporation Highly compact vertical cavity surface emitting lasers
US6597713B2 (en) 1998-07-22 2003-07-22 Canon Kabushiki Kaisha Apparatus with an optical functional device having a special wiring electrode and method for fabricating the same
JP4295870B2 (en) 1999-09-14 2009-07-15 浜松ホトニクス株式会社 Laser equipment
US20060023757A1 (en) * 2004-07-30 2006-02-02 Aram Mooradian Apparatus, system, and method for wavelength conversion of mode-locked extended cavity surface emitting semiconductor lasers
JP2007173393A (en) 2005-12-20 2007-07-05 Denso Corp Laser equipment
US10038304B2 (en) * 2009-02-17 2018-07-31 Trilumina Corp. Laser arrays for variable optical properties
JP2013541854A (en) 2010-11-03 2013-11-14 コーニンクレッカ フィリップス エヌ ヴェ Optical elements for vertical external cavity surface emitting lasers.
DE102012203672B4 (en) 2012-03-08 2018-03-15 Osram Oled Gmbh Optoelectronic component
US10153615B2 (en) * 2015-07-30 2018-12-11 Optipulse, Inc. Rigid high power and high speed lasing grid structures
JP7145073B2 (en) * 2015-10-21 2022-09-30 プリンストン・オプトロニクス・インコーポレイテッド Coded pattern projector

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160164261A1 (en) * 2009-02-17 2016-06-09 Trilumina Corp. Compact multi-zone infrared laser illuminator
US20140079088A1 (en) * 2009-12-19 2014-03-20 Trilumina Corporation System and method for combining laser arrays for digital outputs
EP3000157A1 (en) * 2012-04-20 2016-03-30 Trilumina Corporation Microlenses for multibeam arrays of optoelectronic devices for high frequency operation
EP3000157B1 (en) * 2012-04-20 2018-12-12 Trilumina Corporation Microlenses for multibeam arrays of optoelectronic devices for high frequency operation

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CARSON RICHARD F ET AL: "Progress in high-power high-speed VCSEL arrays", PROCEEDINGS OF SPIE; [PROCEEDINGS OF SPIE ISSN 0277-786X VOLUME 10524], SPIE, US, vol. 9766, 4 March 2016 (2016-03-04), pages 97660B - 97660B, XP060066638, ISBN: 978-1-5106-1533-5, DOI: 10.1117/12.2215009 *
See also references of WO2019033120A1 *
XIANG-TIAN KONG ET AL: "Graphene-Based Ultrathin Flat Lenses", ACS PHOTONICS, vol. 2, no. 2, 20 January 2015 (2015-01-20), pages 200 - 207, XP055555359, ISSN: 2330-4022, DOI: 10.1021/ph500197j *

Also Published As

Publication number Publication date
EP3665753A1 (en) 2020-06-17
JP2020530666A (en) 2020-10-22
WO2019033120A1 (en) 2019-02-14
AU2018314281A1 (en) 2020-04-02
CA3072763A1 (en) 2019-02-14
AU2018314281B2 (en) 2024-02-01
JP7418328B2 (en) 2024-01-19

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