EP3584356A4 - Compound semiconductor and production method therefor - Google Patents
Compound semiconductor and production method therefor Download PDFInfo
- Publication number
- EP3584356A4 EP3584356A4 EP18904520.6A EP18904520A EP3584356A4 EP 3584356 A4 EP3584356 A4 EP 3584356A4 EP 18904520 A EP18904520 A EP 18904520A EP 3584356 A4 EP3584356 A4 EP 3584356A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- production method
- compound semiconductor
- method therefor
- therefor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
- H10D62/8603—Binary Group II-VI materials wherein cadmium is the Group II element, e.g. CdTe
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018021997 | 2018-02-09 | ||
| PCT/JP2018/034260 WO2019155674A1 (en) | 2018-02-09 | 2018-09-14 | Compound semiconductor and production method therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP3584356A1 EP3584356A1 (en) | 2019-12-25 |
| EP3584356A4 true EP3584356A4 (en) | 2021-01-20 |
Family
ID=67549334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP18904520.6A Pending EP3584356A4 (en) | 2018-02-09 | 2018-09-14 | Compound semiconductor and production method therefor |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11552174B2 (en) |
| EP (1) | EP3584356A4 (en) |
| JP (2) | JP7133476B2 (en) |
| KR (3) | KR102684647B1 (en) |
| CN (1) | CN110366612A (en) |
| TW (1) | TWI688681B (en) |
| WO (1) | WO2019155674A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854242B (en) * | 2019-12-18 | 2024-03-19 | 中国原子能科学研究院 | Radiation detection probe, preparation method thereof and radiation detection chip |
| CN113403689A (en) * | 2020-10-26 | 2021-09-17 | 昆明物理研究所 | Preparation method and device of low-defect tellurium-zinc-cadmium crystal |
| US12094988B1 (en) * | 2021-06-23 | 2024-09-17 | Redlen Technologies, Inc. | P-type CZT radiation detector for high flux applications |
| CN116536768B (en) * | 2023-06-29 | 2023-09-29 | 浙江珏芯微电子有限公司 | Crucible for growth of tellurium-zinc-cadmium monocrystal and growth method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0627506A1 (en) * | 1993-06-04 | 1994-12-07 | Japan Energy Corporation | CdTe crystal for use in radiation detector and method of manufacturing such CdTe crystal |
| CN101092748A (en) * | 2007-06-05 | 2007-12-26 | 西北工业大学 | Method for preparing Te-Zn-Cd monocrystal in large volume |
| JP2013241289A (en) * | 2012-05-18 | 2013-12-05 | Jx Nippon Mining & Metals Corp | Compound semiconductor crystal for radiation detection element, radiation detection element, radiation detector, and method for producing compound semiconductor crystal for radiation detection element |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01264990A (en) * | 1987-11-10 | 1989-10-23 | Toshiba Corp | Method of refinning ii-vi compound semiconductor, production of ii-vi compound semiconductor single crystal and production of semiconductor light emitting element formed by using semiconductor single crystal obtained by the same method as substrate |
| US4960721A (en) | 1987-11-10 | 1990-10-02 | Kabushiki Kaisha Toshiba | Method for purifying group II-IV compound semiconductors |
| JP3232461B2 (en) * | 1994-02-21 | 2001-11-26 | 株式会社ジャパンエナジー | Single crystal growth method |
| WO2006054580A1 (en) * | 2004-11-18 | 2006-05-26 | Nippon Mining & Metals Co., Ltd. | CdTe COMPOUND SEMICONDUCTOR SINGLE CRYSTAL |
| CA2510415C (en) * | 2005-06-21 | 2012-08-14 | Redlen Technologies Inc. | A cold-walled vessel process for compounding, homogenizing and consolidating semiconductor compounds |
| CN101220514B (en) * | 2007-09-30 | 2011-02-02 | 西北工业大学 | Method for manufacturing high resistivity tellurium-zincium-cadmium crystal |
| US9495515B1 (en) | 2009-12-09 | 2016-11-15 | Veracyte, Inc. | Algorithms for disease diagnostics |
| DE102010006452B4 (en) | 2010-02-01 | 2012-01-26 | Siemens Aktiengesellschaft | Radiation converter material, beam converter, radiation detector, use of a radiation converter material and method for producing a radiation converter material |
| DE102010021172B4 (en) * | 2010-05-21 | 2013-04-18 | Siemens Aktiengesellschaft | Beam converter with a directly converting semiconductor layer and method for producing such a beam converter |
| CN101871123B (en) * | 2010-06-12 | 2012-11-07 | 上海大学 | Method and device for growing cadmium zinc telluride crystals in mobile tellurium solvent melting zone |
| CN102220644B (en) * | 2011-06-08 | 2013-04-03 | 上海大学 | Method for improving performance of cadmium zinc telluride crystal |
| CN102703983A (en) * | 2012-06-15 | 2012-10-03 | 上海大学 | Method and device for compressing free space in cadmium zinc telluride crystal growing crucible through double sealing sleeves |
| JP6018532B2 (en) | 2013-03-29 | 2016-11-02 | Ｊｘ金属株式会社 | Semiconductor wafer, radiation detection element, radiation detector, and method for producing compound semiconductor single crystal |
| WO2014156597A1 (en) * | 2013-03-29 | 2014-10-02 | Jx日鉱日石金属株式会社 | Compound semiconductor single crystals for photoelectric conversion elements, photoelectric conversion element, and production method for compound semiconductor single crystals for photoelectric conversion elements |
| JP6366418B2 (en) * | 2014-08-12 | 2018-08-01 | Ｊｘ金属株式会社 | Chip substrate made of CdTe or CdZnTe, radiation detector using the same, and manufacturing method of radiation detector |
| JP6725212B2 (en) | 2015-04-17 | 2020-07-15 | Ｊｘ金属株式会社 | CdTe compound semiconductor and radiation detection element using the same |
| EP3305950B1 (en) * | 2015-07-03 | 2020-02-19 | JX Nippon Mining & Metals Corporation | CdTe-BASED COMPOUND SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME |
| JP6097854B2 (en) | 2016-02-02 | 2017-03-15 | Ｊｘ金属株式会社 | Method for producing compound semiconductor crystal for radiation detection element |
| CN106192014B (en) * | 2016-09-12 | 2018-07-03 | 西北工业大学 | The mobile cycle annealing method of modifying of tellurium-zincium-cadmium crystal |
-
2018
- 2018-09-14 US US16/498,712 patent/US11552174B2/en active Active
- 2018-09-14 JP JP2018565901A patent/JP7133476B2/en active Active
- 2018-09-14 KR KR1020227040328A patent/KR102684647B1/en active Active
- 2018-09-14 EP EP18904520.6A patent/EP3584356A4/en active Pending
- 2018-09-14 KR KR1020197010152A patent/KR20190096932A/en not_active Ceased
- 2018-09-14 CN CN201880004429.4A patent/CN110366612A/en active Pending
- 2018-09-14 WO PCT/JP2018/034260 patent/WO2019155674A1/en unknown
- 2018-09-14 KR KR1020217022764A patent/KR20210093377A/en not_active Ceased
- 2018-09-27 TW TW107134075A patent/TWI688681B/en active
-
2022
- 2022-06-16 JP JP2022097535A patent/JP7428750B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0627506A1 (en) * | 1993-06-04 | 1994-12-07 | Japan Energy Corporation | CdTe crystal for use in radiation detector and method of manufacturing such CdTe crystal |
| CN101092748A (en) * | 2007-06-05 | 2007-12-26 | 西北工业大学 | Method for preparing Te-Zn-Cd monocrystal in large volume |
| JP2013241289A (en) * | 2012-05-18 | 2013-12-05 | Jx Nippon Mining & Metals Corp | Compound semiconductor crystal for radiation detection element, radiation detection element, radiation detector, and method for producing compound semiconductor crystal for radiation detection element |
Non-Patent Citations (3)
| Title |
|---|
| ARI?O-ESTRADA G ET AL: "Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode", JOURNAL OF INSTRUMENTATION, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 9, no. 12, 15 December 2014 (2014-12-15), XP020275332, ISSN: 1748-0221, [retrieved on 20141215], DOI: 10.1088/1748-0221/9/12/C12032 * |
| See also references of WO2019155674A1 * |
| VADAWALE S V ET AL: "Experimental measurements of charge carrier mobility: lifetime products for large sample of pixilated CZT detectors", PROCEEDINGS OF SPIE, vol. 8453, 25 September 2012 (2012-09-25), pages 84532K - 84532K, XP060028975, ISBN: 978-1-62841-730-2, DOI: 10.1117/12.931424 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7133476B2 (en) | 2022-09-08 |
| TW201934819A (en) | 2019-09-01 |
| KR20220159481A (en) | 2022-12-02 |
| EP3584356A1 (en) | 2019-12-25 |
| KR102684647B1 (en) | 2024-07-15 |
| JP7428750B2 (en) | 2024-02-06 |
| JPWO2019155674A1 (en) | 2020-12-03 |
| US11552174B2 (en) | 2023-01-10 |
| CN110366612A (en) | 2019-10-22 |
| JP2022113874A (en) | 2022-08-04 |
| US20210111252A1 (en) | 2021-04-15 |
| KR20190096932A (en) | 2019-08-20 |
| WO2019155674A1 (en) | 2019-08-15 |
| KR20210093377A (en) | 2021-07-27 |
| TWI688681B (en) | 2020-03-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
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| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
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| 17P | Request for examination filed |
Effective date: 20190920 |
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| AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
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| AX | Request for extension of the european patent |
Extension state: BA ME |
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| A4 | Supplementary search report drawn up and despatched |
Effective date: 20201218 |
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| RIC1 | Information provided on ipc code assigned before grant |
Ipc: C30B 11/00 20060101ALI20201214BHEP Ipc: C30B 11/02 20060101ALI20201214BHEP Ipc: C30B 29/48 20060101AFI20201214BHEP Ipc: C30B 33/02 20060101ALI20201214BHEP Ipc: H01L 31/0248 20060101ALI20201214BHEP Ipc: H01L 31/0296 20060101ALI20201214BHEP Ipc: G01T 1/24 20060101ALI20201214BHEP Ipc: H01L 31/0264 20060101ALI20201214BHEP |
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| DAV | Request for validation of the european patent (deleted) | ||
| DAX | Request for extension of the european patent (deleted) | ||
| RAP3 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: JX NIPPON MINING & METALS CORPORATION |
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| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
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| 17Q | First examination report despatched |
Effective date: 20230913 |