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EP3457448A4 - LAMINATE TYPE PHOTOELECTRIC CONVERSION DEVICE, AND MANUFACTURING METHOD THEREOF - Google Patents

LAMINATE TYPE PHOTOELECTRIC CONVERSION DEVICE, AND MANUFACTURING METHOD THEREOF Download PDF

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Publication number
EP3457448A4
EP3457448A4 EP17796083.8A EP17796083A EP3457448A4 EP 3457448 A4 EP3457448 A4 EP 3457448A4 EP 17796083 A EP17796083 A EP 17796083A EP 3457448 A4 EP3457448 A4 EP 3457448A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
photoelectric conversion
conversion device
type photoelectric
laminate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP17796083.8A
Other languages
German (de)
French (fr)
Other versions
EP3457448B1 (en
EP3457448A1 (en
Inventor
Ryota Mishima
Masashi Hino
Tomomi Meguro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kaneka Corp
Original Assignee
Kaneka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaneka Corp filed Critical Kaneka Corp
Publication of EP3457448A1 publication Critical patent/EP3457448A1/en
Publication of EP3457448A4 publication Critical patent/EP3457448A4/en
Application granted granted Critical
Publication of EP3457448B1 publication Critical patent/EP3457448B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H10F71/1385—Etching transparent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
EP17796083.8A 2016-05-09 2017-05-08 Stacked photoelectric conversion device and method for producing same Active EP3457448B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016094106 2016-05-09
PCT/JP2017/017356 WO2017195722A1 (en) 2016-05-09 2017-05-08 Stacked photoelectric conversion device and method for producing same

Publications (3)

Publication Number Publication Date
EP3457448A1 EP3457448A1 (en) 2019-03-20
EP3457448A4 true EP3457448A4 (en) 2019-12-25
EP3457448B1 EP3457448B1 (en) 2022-06-15

Family

ID=60267190

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17796083.8A Active EP3457448B1 (en) 2016-05-09 2017-05-08 Stacked photoelectric conversion device and method for producing same

Country Status (5)

Country Link
US (1) US10944017B2 (en)
EP (1) EP3457448B1 (en)
JP (1) JP6670377B2 (en)
CN (1) CN109196678B (en)
WO (1) WO2017195722A1 (en)

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GB201820427D0 (en) 2018-12-14 2019-01-30 Univ Oxford Innovation Ltd Device interlayer
CN109473502B (en) * 2018-12-19 2024-07-23 赵怡程 Solar cell lamination structure and preparation method thereof
JP7244031B2 (en) * 2019-02-27 2023-03-22 株式会社カネカ Photoelectric conversion element and method for manufacturing photoelectric conversion element
US20220344106A1 (en) 2019-08-12 2022-10-27 Arizona Board Of Regents On Behalf Of Arizona State University Perovskite/silicon tandem photovoltaic device
EP4023431B1 (en) * 2019-08-30 2025-02-19 Keihin Ramtech Co., Ltd. Multilayer structure and method for producing multilayer structure
US11398355B2 (en) 2019-10-01 2022-07-26 Seoul National University R&Db Foundation Perovskite silicon tandem solar cell and method for manufacturing the same
US11437537B2 (en) 2020-03-02 2022-09-06 King Fahd University Of Petroleum And Minerals Perovskite-silicon tandem solar cell
US11522096B2 (en) 2020-03-03 2022-12-06 King Fahd University Of Petroleum And Minerals Perovskite-silicon tandem structure and photon upconverters
KR20210112160A (en) * 2020-03-04 2021-09-14 엘지전자 주식회사 Solar cell and method for manufacturing the same
CN111554763B (en) * 2020-04-01 2023-06-09 南开大学 High-pressure high-efficiency perovskite/crystalline silicon laminated battery
CN111916561A (en) * 2020-07-22 2020-11-10 隆基绿能科技股份有限公司 Perovskite solar cell, tandem solar cell and battery pack
CN114122180A (en) * 2020-08-31 2022-03-01 隆基绿能科技股份有限公司 Laminated photovoltaic device and production method
WO2022071302A1 (en) 2020-09-30 2022-04-07 株式会社カネカ Perovskite thin film solar cell production method
WO2022102128A1 (en) * 2020-11-16 2022-05-19 株式会社 東芝 Multilayer junction-type photoelectric conversion element and method for manufacturing same
JPWO2023037885A1 (en) * 2021-09-13 2023-03-16
WO2023042614A1 (en) * 2021-09-14 2023-03-23 株式会社カネカ Solar cell
JP7114821B1 (en) 2022-03-18 2022-08-08 株式会社東芝 Multilayer junction photoelectric conversion element and method for manufacturing multilayer junction photoelectric conversion element
CN115411065B (en) * 2022-09-29 2024-02-13 隆基绿能科技股份有限公司 A solar cell and its preparation method
CN116885046B (en) * 2023-09-07 2023-11-17 无锡松煜科技有限公司 Monocrystalline silicon slice texturing method
CN117117020A (en) * 2023-09-15 2023-11-24 晶科能源股份有限公司 Solar cells and photovoltaic modules

Citations (2)

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EP3308401A1 (en) * 2015-06-12 2018-04-18 Oxford Photovoltaics Limited Multijunction photovoltaic device
EP3308412A1 (en) * 2015-06-12 2018-04-18 Oxford Photovoltaics Limited Method of depositing a perovskite material

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JP3762086B2 (en) * 1998-01-28 2006-03-29 株式会社カネカ Tandem silicon thin film photoelectric conversion device
US20030044539A1 (en) * 2001-02-06 2003-03-06 Oswald Robert S. Process for producing photovoltaic devices
JP2002319688A (en) * 2001-04-20 2002-10-31 Sharp Corp Laminated solar battery
JP2003069061A (en) * 2001-08-24 2003-03-07 Sharp Corp Multilayer photoelectric conversion element
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EP3308401A1 (en) * 2015-06-12 2018-04-18 Oxford Photovoltaics Limited Multijunction photovoltaic device
EP3308412A1 (en) * 2015-06-12 2018-04-18 Oxford Photovoltaics Limited Method of depositing a perovskite material

Non-Patent Citations (1)

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Also Published As

Publication number Publication date
CN109196678B (en) 2022-07-15
US10944017B2 (en) 2021-03-09
JPWO2017195722A1 (en) 2018-12-20
US20190081189A1 (en) 2019-03-14
EP3457448B1 (en) 2022-06-15
CN109196678A (en) 2019-01-11
WO2017195722A1 (en) 2017-11-16
JP6670377B2 (en) 2020-03-18
EP3457448A1 (en) 2019-03-20

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