Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
  • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
  • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
  • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
  • H01L23/492—Bases or plates or solder therefor
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
  • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
  • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
  • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
  • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
  • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
  • H01L25/162—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
  • H01L2224/491—Disposition
  • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
  • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
  • H01L2224/491—Disposition
  • H01L2224/4912—Layout
  • H01L2224/49175—Parallel arrangements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
  • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
  • H01L23/495—Lead-frames or other flat leads
  • H01L23/49541—Geometry of the lead-frame
  • H01L23/49562—Geometry of the lead-frame for individual devices of subclass H10D
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
  • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
  • H01L23/495—Lead-frames or other flat leads
  • H01L23/49575—Assemblies of semiconductor devices on lead frames
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/13—Discrete devices, e.g. 3 terminal devices
  • H01L2924/1304—Transistor
  • H01L2924/1305—Bipolar Junction Transistor [BJT]
  • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/13—Discrete devices, e.g. 3 terminal devices
  • H01L2924/1304—Transistor
  • H01L2924/1306—Field-effect transistor [FET]
  • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Definitions

• the present invention relates to an electronic power module, particularly for applications in fields such as automobiles, trucks, trains, photovoltaic systems, or battery management.
• one or more electronic power modules control the currents and voltages applied.
• a general desire to reduce carbon monoxide emissions supports the electrification of cars, buses and trucks.
• the electrification of mobility requires the construction of electric motors / generators and compact conversion systems. These machines and conversion systems most often include one or more remote or integrated electronic modules.
• Such a system most often comprises a control module and one or more electronic circuits consisting of active electronic components of the MOSFET or IGBT type arranged in a bridge.
• the power electronic components in the form of bare chips, are brazed on leadframes, which are overmolded in a mechatronic box. Or alternatively on ceramic substrates carrying copper tracks of the DBC type.
• These connection grids are maintained plated on a metal soleplate by means of an electrically insulating wafer which is sandwiched between the connection grids and the assembly substrate and the soleplate.
• the wafer has properties of good thermal conduction so as to transmit the calories generated by the chips to a heat sink placed under the metal sole of the circuit.
• FR2947679 is formed of an overmolded mechatronic housing:
• busbar intermediate connection traces and power traces, called "busbar" in English terminology, which are electrically connected to the electronic chips by soldered connection son.
• the present invention therefore aims at a design of an electronic power module overcoming these disadvantages.
• these electronic chips are mounted directly on the power traces formed at least in part of hollow metal profile segments having at least partially a flat outer surface.
• a first set of these power traces is electrically isolated from a second set of these power traces by at least a first substrate formed of a laminate comprising a first electrically insulating material and a second electrically conductive material.
• a cooling liquid circulates in these profiles.
• these profiles have according to the invention a rectangular cross section.
• the first material is an organic insulator and the second material is copper.
• the first substrate supports electronic control components of the electronic chips.
• the first set of power traces, the first substrate and the second set of power traces form a stack contained substantially in a parallelepiped volume.
• This stack further comprises, according to the invention, a second substrate below the first set of power traces and a third substrate above the second set of power traces forming at least one cavity containing an electrically insulating and thermally conductive liquid.
• the electronic chips are MOSFET or IGBT type power transistors inclusive of diodes forming branches of a bridge of an inverter intended to be connected as input to a power supply network of a power supply.
• motor vehicle and output to at least one winding of a rotating electrical machine of said vehicle.
• Figures 1a and 1b show schematically, respectively in side view and in top view, a power module according to the invention comprising a bridge of two-branch power transistors.
• Figure 2 shows in perspective an example of a concrete embodiment of a power module according to the invention similar to that shown schematically in Figures 1a and 1b. DESCRIPTION OF THE PREFERRED EMBODIMENTS OF THE INVENTION
• FIG. 1a which diagrammatically shows in side view a power module 1 according to the invention, shows an electronic chip 2 connected by a connecting wire 3 to a first element 4 of a first set of power traces 4, 5 , 6 that shows in full the top view of Figure 1b, and mounted directly on a second element 6 of the first set of traces of power 4, 5, 6.
• the electronic chip 2 in question corresponds to one of the transistors 2, 7, 8, 9 of a bridge of power transistors 2, 7, 8, 9 of MOSFET type with two branches:
• the first set of power traces 4, 5, 6 corresponds to so-called "low side” transistors 2, 7 whose sources are connected by the second element 6 to a first power connection terminal 10 of the module 1 intended to be connected to a ground, and to the connections 4, 5 of the drains of these "low side” transistors 2, 7 to the output terminals 1 1, 12 of the module 1 by the first element 4 and a third element 5;
• a second set of power traces 13, 14 corresponds to transistors 8, 9 called “high side", that is to say whose other drains are connected to a second power connection terminal 15 intended to be connected to a power supply of the module 1.
• the electronic chips of the transistors 2, 7, 8, 9 are mounted directly on the first set of power traces 4, 5, 6.
• the first and second sets of power tracks 4, 5, 6, 13, 14 are formed of segments of hollow rectangular section metal sections.
• a refrigerant circulating in these sections 4, 5, 6, 13, 14 allows efficient evacuation of the heat produced by the electronic chips 2, 7, 8, 9.
• the first and second sets of power traces 4, 5, 6, 13, 14 are separated by a first substrate 16.
• This first substrate 16 is formed of a laminate of an organic insulator, such as epoxy, and copper layers making it possible to produce a printed circuit according to PCB production techniques known per se (electroplating, plastic paste). welding, combined or not with electrical interconnections made by sintering).
• organic insulator such as epoxy
• copper layers making it possible to produce a printed circuit according to PCB production techniques known per se (electroplating, plastic paste). welding, combined or not with electrical interconnections made by sintering).
• a second substrate 17 arranged below the first set of power traces 4, 5, 6 and a third substrate 18 arranged above the second set of power tracks 13, 14 form with the first set of power traces 4, 5, 6, the first substrate 16, and the second set of power traces 13, 14 a stack contained in a substantially parallelepipedal volume.
• Cavities formed in this stack around the electronic chips 2, 7, 8, 9 contain an electrically insulating liquid and thermally conductive, which contributes by convection cooling of these chips 2, 7, 8, 9.
• the power module architecture 1 described above makes it possible to produce power modules that are more compact than those known from the state of the art by improving their cooling.
• a bridge with two branches made in the form of the power module 1 shown in Figure 2 connected to the output 1 1, 12 to a phase winding 19 of a rotating electrical machine and, at the input 10, 15, to a network power power supply 20, is a brick to advantageously achieve high-power multiphase reversible DC-DC converters, feeding, for example, electric vehicle traction motors typically up to 60 kW or more.
• the dimensions of the volume occupied by a brick 1 are substantially equal to 7 cm x 5 cm x 1 cm.
• the shape and section of the sections 4, 5, 6, 13, 14 indicated are just one example. It is the same for the nature of the materials constituting the first substrate 16, or the type of power transistors 2, 7, 8, 9 used.

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Inverter Devices (AREA)
• Insulated Metal Substrates For Printed Circuits (AREA)

Applications Claiming Priority (2)

Publications (1)

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• 2015
  • 2015-10-05 FR FR1559466A patent/FR3042078B1/fr not_active Expired - Fee Related
• 2016
  • 2016-10-04 EP EP16790655.1A patent/EP3360160A1/de not_active Withdrawn
  • 2016-10-04 WO PCT/FR2016/052536 patent/WO2017060602A1/fr active Application Filing

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