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EP3281218A1 - Verfahren zur elektrischen kontaktierung eines bauteils mittels galvanischer anbindung eines offenporigen kontaktstücks und entsprechendes bauteilmodul - Google Patents

Verfahren zur elektrischen kontaktierung eines bauteils mittels galvanischer anbindung eines offenporigen kontaktstücks und entsprechendes bauteilmodul

Info

Publication number
EP3281218A1
EP3281218A1 EP16726297.1A EP16726297A EP3281218A1 EP 3281218 A1 EP3281218 A1 EP 3281218A1 EP 16726297 A EP16726297 A EP 16726297A EP 3281218 A1 EP3281218 A1 EP 3281218A1
Authority
EP
European Patent Office
Prior art keywords
component
contact
contact piece
open
pore
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP16726297.1A
Other languages
English (en)
French (fr)
Inventor
Stefan Stegmeier
Hubert Baueregger
Volkmar Sommer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of EP3281218A1 publication Critical patent/EP3281218A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C25D21/14—Controlled addition of electrolyte components
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
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    • H01L2924/181—Encapsulation

Definitions

  • the invention relates to a method for electrical contacting of a component with an electrically conductive contact and a component module having a component with at least one electrically conductive contact.
  • the component contacts can withstand high temperatures, while non-substrate contacts are regularly used with processes such as wire-bond technology (also: “Ribbon Bond Technology”). ), the pressure-contact technology with the aid of compensating elements, such as molybdenum, or realized with planar technologies (for example, SiPLIT, Skin and DirectFET)
  • wire-bond technology also: “Ribbon Bond Technology”
  • compensating elements such as molybdenum
  • planar technologies for example, SiPLIT, Skin and DirectFET
  • soldering and sintering processes adversely affect a high temperature entry in the components to be contacted and therefore can not be used for heat-sensitive components.
  • Electroplating, diffusion soldering and sintering are also very time-consuming processes.
  • the necessary fixing in particular in the case of the contacting of a plurality of contact points, requires considerable installation effort.
  • these contacting methods are not very reliable due to the risk of component damage due to irregular compressive forces.
  • the inventive method is a method for electrical see contacting a component having at least one electrical contact.
  • at least one open-pored contact piece is galvanically connected to the at least one contact.
  • the open-pore nature of the contact piece provides numerous passages for electrolyte fluid, which can thus reach the interface of the contact piece and the electrical contact of the component from the outside.
  • the open-pored material of the contact piece has an open-cell structure through which electrolyte liquid can pass through particularly efficiently.
  • the method according to the invention can advantageously be carried out without a large temperature input into components to be contacted, which are at least potentially heat-sensitive, since galvanic methods are regularly carried out at relatively low temperatures of at most 150.degree.
  • permanently elastic, resilient contacts can be realized very easily by means of the method according to the invention, since straight open-pore materials regularly have elastic, resilient material properties.
  • galvanically connected in the sense of this application is understood in particular to mean “connected by electroplating technology” or “connected by means of electroplating”, the galvanic connection preferably taking place by means of electrolyte fluid, in particular by means of an electrolytic bath.
  • electrolyte liquid is introduced into open pores of the open-pore contact piece.
  • open-pored contact piece is understood to mean, in particular, a contact piece in which pores lead from the outside into the interior of the contact piece Material is, with which the contact piece and / or the electrical contact of the component is formed.
  • such a component is used in the method according to the invention, in which the at least one contact, viewed at least in itself, is a flat part.
  • the contact preferably has a contact surface whose greatest areal extent is greater than an extent of the contact perpendicular to this contact area.
  • the method according to the invention proves to be particularly advantageous, since by means of this method, a flat contacting is readily feasible.
  • heat-dissipating contacts can be easily achieved in this way, since planar contacts already cause a strong heat spreading due to the spatial geometry. Also the to
  • Heat spread required thermal conductivity is given regularly, as required for contacting good electrical conductivity as well as desirable for a heat spreading good thermal conductivity for typical materials matrials regularly go together.
  • At least one contact piece is an electrically conductive Kon- clock piece used.
  • the contacts can be realized very quickly, since only an electrically conductive connection has to be accomplished by means of the material deposited on the contact point. To deposit larger amounts of material is unnecessary in this embodiment of the method according to the invention, since the contact piece itself already represents a large-scale conduction path.
  • the at least one, open-pore contact piece is formed from or with porous material.
  • the at least one open-pore contact piece is formed from or with metal, in particular nickel and / or silver and / or gold and / or tin and / or copper.
  • the at least one open-pored contact piece with a fabric-like and / or foam-like and / or net-like structure is expediently formed in the method according to the invention.
  • the at least one open-pore contact piece is galvanically bonded to the contact at such a temperature which is at most 100 ° C., preferably at most 60 ° C., in particular at most 20 ° C. and expediently at most 5 ° C. and / or from the operating temperature of the component by at most 20 ° C, preferably by at most 10 ° C, in particular by at most 5 ° C and ideally by at most 2 ° C, deviates.
  • the temperature input into the component in the implementation of the method can be kept very low.
  • this development of the method according to the invention is particularly preferable.
  • the component is the smallest possible difference in temperature of galvanic connection and later operating temperature tied with low tension.
  • the galvanic connection can be carried out at temperatures of more than 100 ° C., in which case salt melt - based metal deposition methods are expediently used.
  • the at least one open-pored contact piece is galvanically connected by means of an electrochemical electroplating process.
  • an electrically conductive contact piece is used, wherein metal is deposited on the contact piece by means of the electrochemical electroplating process.
  • an anode is used, which is formed with such a metal, which is to be deposited in the process on the contact piece.
  • this metal is copper.
  • the metal used is nickel and / or silver and / or gold and / or tin.
  • the at least one open-pore contact piece is galvanically connected by means of an external current-free method, in particular by exchange metallization and / or by reduction metallization and / or by contact metallization.
  • an external current-free method in particular by exchange metallization and / or by reduction metallization and / or by contact metallization.
  • a contact piece is used, which initially as such does not form a continuous conduction path, strictly speaking, therefore, it is not macroscopically conductive. Instead, the contact piece has a large number of metal islands, which to a certain extent form a continuous conduction path as metallization islands during the electroless plating process, which is expediently free from external current.
  • the component is contacted by means of the contact piece with a further component and / or current conductor and / or with a substrate, after which the contact piece and / or the component and / or the further component and / or conductor and / or substrate with an electrical insulation layer are provided.
  • the insulating layer is advantageously formed by means of casting and / or molding and / or from or with siloxanes and / or polymers.
  • a power component is used as the component.
  • Herangezo- gene is suitably in the inventive method as a component, a component having at least one transistor, preferably an insulated-gate bipolar transistor.
  • a component with two contacts preferably on opposite sides, in particular flat sides of the component, used, wherein at least one open-pore contact piece is electrically connected to these contacts, in particular at least one open-pore contact piece per contact, preferably in each case after one inventive method as described above.
  • the component module according to the invention has a component with at least one electrical contact.
  • at least one open-pore contact piece is galvanically connected to the electrical contact.
  • the component module according to the invention is particularly advantageously formed by means of a method according to the invention as described above.
  • this stack is realized in the manner of a stack, the planes of this stack being formed by means of printed circuit boards and / or substrates to which components are connected by means of contact pieces.
  • the contacts of components of all levels are contacted at the same time by means of the method according to the invention.
  • the component module according to the invention, several components are connected to this or these together on a flat side of a substrate or a printed circuit board. Also in this development, the plurality of components can be contacted at the same time by means of the method according to the invention.
  • FIG. 1 shows an arrangement of a power component on a
  • Fig. 2 shows the arrangement of the power component according to. 1 when performing a first step of the invention inventive method in a schematic diagram in cross section
  • Fig. 3 shows the arrangement of the power component according to. Fig. 1
  • FIG. 4 shows an enlarged detail (A) from FIG. 3 together with a detail (B) from it
  • FIG. 5 shows the component module according to the invention according to the method steps according to the figures 1 to 4 in a schematic diagram in cross section
  • FIG. 6 shows a further arrangement of a power component on a ceramic substrate before carrying out a further exemplary embodiment of the method according to the invention for producing a further exemplary embodiment of the component module according to the invention in a schematic diagram in cross section,
  • Fig. 7 shows the arrangement of the power component according to. Fig. 6 in a first step of the further embodiment of the inventive method in a schematic diagram in cross section and Fig. 8 shows the further embodiment of the component module according to the method steps according to Figures 6 and 7 in a schematic diagram in cross section.
  • the power component 10 shown in FIG. 1 is a
  • Insulated-gate bipolar transistor n IGBT
  • IGBT Insulated-gate bipolar transistor
  • first 20 and second flat side 30 which vonanan are averted.
  • first 20 and second flat side 30 extend thin-film-like surface contacts 40, 50 of the power component 10, which are formed as areal chip metallizations.
  • the surface contact 40 of the power component 10 arranged on the upper side in FIG. 1 consists of copper
  • the underside surface contact 50 of the power component 10 consists of silver.
  • top surface contacts may also be formed from or with silver or from or with AlSiCu, other metals or other electrically conductive materials
  • the bottom surface contacts may also be formed from or with gold or other metals or other electrically conductive materials.
  • contact pieces 60, 70 open-pored material are placed on the surface contacts 40, 50, which extend substantially flat along the surface contacts 40, 50.
  • the contact pieces 60, 70 are formed conductive and realized as copper sponges.
  • the open-pore contact pieces 60, 70 can also consist of other open-pore conductive materials, such as nets or fabric or other porous structures formed aluminum -, Ti- or formed from or with other metals contacts.
  • polymer sponges coated with conductive materials or partially coated with conductive particles can also be used as contact pieces.
  • One of the surface contacts 50 of the power component 10 faces a further surface contact 80 of a ceramic substrate 90 with a ceramic core 100 made of aluminum nitride (A1N).
  • the ceramic core 100 can be made of other ceramic materials in further, not specifically shown embodiments. mixing material, or from printed circuit board materials such as FR 4 or other carriers made of silicone and / or epoxy.
  • the further surface contact 80 of the ceramic substrate 90 is formed as superficial substrate metallization, in the illustrated exemplary embodiment as a copper substrate metallization.
  • the surface contact 50 of the power component 10 facing the ceramic substrate 90 and the further surface contact 80 of the ceramic substrate 90 extend parallel to one another and consequently form a planar gap.
  • the contact piece 70 arranged on that surface contact 50 facing the ceramic substrate 90 fills this planar gap completely and rests against this surface contact 50 of the power component 10 as well as on the further surface contact 80 of the ceramic substrate 90.
  • the contact piece 70 is thus arranged for contacting the power component 10 and the ceramic substrate 90.
  • the open-pore contact pieces 60, 70 are contacted with electrodes 110, 120 in a further method step (FIG. 2).
  • a first electrode 110 at that contact piece 60 which is arranged on that surface contact 40 facing away from the ceramic substrate 90, is electrically contacted on its outer side 130, which is remote from the power component 10.
  • Another second electrode 120 is electrically contacted to the one copper surface contact 80 which is located on the contact piece located between power component 10 and ceramic substrate 90.
  • the first electrode 110 acts as a fixing element, which ensures the fixing of the power module formed by the power component 10, ceramic substrate 90 and contact pieces 60, 70 during the method according to the invention.
  • the first electrode 110 by means of a not shown in detail clamping device in the direction of
  • the electrode 110 may not be formed as a fixing element, wherein the fixation of the contact pieces 60, 70 instead by means of a conductive adhesive takes place. Due to the conductivity of the adhesive, the contact pieces 60, 70 can be easily contacted electrically.
  • metal is deposited by means of electrochemical galvanization known per se, copper in the illustrated embodiment, in the region between the open-pore contact pieces 60, 70 and the surface contacts 40, 50, 80 (FIG ).
  • the deposited material forms layers 132, 134, 136 which extend flat along the chip metallizations or
  • FIG. 4 A illustrates the connection of the contact piece 70 located between the power component 10 and the ceramic substrate 90.
  • FIG. 4 B illustrates the connection of the contact piece 70 to the power component 10.
  • the power modules according to the invention formed of ceramic substrate 90 and anAuth investigatingm power device 10 with insulating material 170, in the illustrated case, a siloxane, wrapped (Fig. 5).
  • insulating material 170 in the illustrated case, a siloxane, wrapped (Fig. 5).
  • another insulating material 170 is used, for example, a polymer.
  • FIGS. 6 to 8 instead of an electrochemical electroplating process, an electroless plating process is used. Accordingly, this embodiment differs from the embodiment shown in Figures 1 to 5 in that - as known per se - a contact with electrodes 110, 120 is not required for electroless plating process. Consequently, instead of the first electrode 110, only one fixing element 180 is present (FIG. 6). The fixing element 180 is subjected to a force in the direction of the ceramic substrate 90 by means of a clamping device not shown in detail, so that the power module is held together during the method.
  • no fixing element 180 is provided, wherein the fixation of the contact pieces 60 ⁇ , 70 'instead by means of an adhesive (for example by means of a small adhesive point).
  • an adhesive for example by means of a small adhesive point.
  • a contact piece is used, which initially as such does not form a continuous conduction path. Rather, the contact piece has a large number of copper metal islands, which as a rule form a continuous conduction path as metallization islands during the electroless plating process as described above.
  • the power modules according to the invention formed of ceramic substrate 90 and contacted power component 10 are coated with insulating material 170, in the illustrated case a siloxane (FIG. 8).
  • insulating material 170 in the illustrated case a siloxane (FIG. 8).
  • another insulating material 170 is used, for example, a polymer.
  • the galvanized metal may be another metal instead of copper.
  • a power module according to the invention may be realized in a stack with several stacked ceramic or other substrates in the manner of a stack.
  • Electronic contacts can be performed in several levels at the same time by means of the method according to the invention.
  • a plurality of components can also be contacted simultaneously by means of the method according to the invention in a single plane.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Die Bonding (AREA)
  • Manufacturing Of Electrical Connectors (AREA)

Abstract

Bei einem Verfahren zur elektrischen Kontaktierung eines Bauteils (10) (z.B. eines Leistungsbauteils und/oder eines (Halbleiter)Bauteils mit mindestens einem Transistor, vorzugsweise einem IGBT (eng. insulated-gate bipolar transistor)) mit zumindest einem Kontakt (40, 50) wird an den zumindest einen Kontakt (40, 50) zumindest ein offenporiges Kontaktstück (60, 70) galvanisch (elektrochemisch oder außenstromfrei) angebunden. Damit wird ein Bauteilmodul gebildet. Der Kontakt (40, 50) ist vorzugsweise ein Flachteil bzw. weist eine Kontaktfläche auf, deren größte flächige Erstreckung größer ist als eine Erstreckung des Kontakts (40, 50) senkrecht zu dieser Kontaktfläche. Die Temperatur der galvanischen Anbindung beträgt höchstens 100 °C, vorzugsweise höchstens 60 °C, zweckmäßig höchstens 20 °C und idealerweise höchstens 5 °C und/oder weicht von der Betriebstemperatur des Bauteils um höchstens 50 °C, vorzugsweise um höchstens 20 °C, insbesondere um höchstens 10 °C und idealerweise um höchstens 5 °C, vorzugsweise höchstens 2 °C, ab. Das Bauteil (10) kann mittels des Kontaktstücks (60, 70) mit einem weiteren Bauteil, Stromleiter und/oder Substrat (90) kontaktiert werden. Vorzugsweise wird ein Bauteil (10) mit zwei Kontakten (40, 50) an einander abgewandten Seiten des Bauteils (10) herangezogen, wobei je Kontakt (40, 50) zumindest ein offenporiges Kontaktstück (60, 70) an dieser galvanisch angebunden wird.

Description

Beschreibung
VERFAHREN ZUR ELEKTRISCHEN KONTAKTI ERLING EINES BAUTEILS MITTELS GALVANISCHER ANBINDUNG EINES OFFENPORIGEN KONTAKTSTÜCKS UND ENTSPRECHENDES BAUTEILMODUL
Die Erfindung betrifft ein Verfahren zur elektrischen Kontak- tierung eines Bauteils mit einem elektrisch leitfähigen Kontakt sowie ein Bauteilmodul mit einem Bauteil mit zumindest einem elektrisch leitfähigen Kontakt.
Insbesondere in der Mikrosystemtechnik und der Leistungselektronik werden elektrische Kontakte von passiven Bauteilen wie beispielsweise Widerständen sowie Halbleiterbauteilen wie beispielsweise IGBTs , Dioden, MOSFETS, LEDs, und Substraten, wie beispielsweise FR4 , DCB, ANM und Leadframes, elektrisch mittels einer Aufbau- und Verbindungstechnik miteinander verbunden .
Zur elektrischen Kontaktierung an Substrate sind Verfahren wie das Kleben mittels Leitkleber, das Löten von sog.
„Preforms", Löten mittels Lotpasten, sowie Diffusionslöten und Sintern bekannt. Beim Diffusionslöten und Sintern halten die Bauteilkontakte auch hohen Temperaturen stand. Substratferne Kontaktierungen hingegen werden regelmäßig mit Verfahren wie die Wire-Bond-Technologie (auch: „Bändchen- Bond-Technologie") , die Druckkontakttechnologie mit Hilfe von Ausgleichselementen, etwa Molybdän, oder mit planaren Technologien (beispielsweise SiPLIT, Skin und DirectFET) realisiert Allerdings resultieren beim Kontaktieren mittels Druck- oder Niederdrucksintern verspannungs- und bruchanfällige elektrische Kontakte. Ferner sind solche Sinterverfahren zeitlich und apparativ aufwendig. Außerdem bedingen Löt- und Sinterverfahren nachteilig einen hohen Temperatureintrag in die zu kontaktierenden Bauelemente und können für wärmeempfindliche Bauteile daher nicht eingesetzt werden. Galvanik, Diffusionslöten und Sintern sind überdies sehr zeitaufwendige Verfahren . Bei Klemm- oder Feder- oder Pressverbindungen hingegen erfordert die notwendige Fixierung insbesondere bei der Kontaktie- rung mehrerer Kontaktstellen nachteilig einen erheblichen Montageaufwand. Ferner sind diese Kontaktierungsverfahren infolge des Risikos der Beschädigung von Bauteilen aufgrund unregelmäßiger Druckkräfte nicht sehr verlässlich.
Die Kontaktierung mit verpressbaren Lotmaterialien (etwa „Heatspring" , zum Anmeldezeitpunkt vom Unternehmen Indium
Cooperation vertrieben) hingegen resultiert in Kontakten mit geringer elektrischer Leitfähigkeit und ist zudem aufwendig und teuer. Nachteilig an den bekannten Verfahren ist also, dass zur elektrischen Kontaktierung an die und fern der Substrate folgende Erfordernisse nur schwer zugleich erfüllbar sind:
die gleichzeitige Herstellung mehrerer Kontakte
ohne hohen Temperatureintrag
- ohne hohen Druckeintrag
im Zeitbereich von Sekunden bis wenigen Minuten
mit großen Kontaktflächen
und hoher Temperaturbeständigkeit. Es ist daher Aufgabe der Erfindung, ein Verfahren zur elektrischen Kontaktierung eines Bauteils mit zumindest einem leitfähigen Kontakt anzugeben, welches die vorgenannten Nachteile nicht aufweist. Insbesondere soll es mit dem erfindungsgemäßen Verfahren möglich sein, gleichzeitig mehrere Kontakte ohne hohen Temperatur- oder Druckeintrag schnell, großflächig und temperaturbeständig zu kontaktieren. Ferner ist es Aufgabe der Erfindung, ein Bauteilmodul mit derartig kontaktierten elektrischen Kontakten bereitzustellen. Diese Aufgabe der Erfindung wird mit einem Verfahren mit den in Anspruch 1 angegebenen Merkmalen sowie mit einem Bauteil - modul mit den in Anspruch 15 angegebenen Merkmalen gelöst. Bevorzugte Weiterbildungen der Erfindung ergeben sich aus den zugehörigen Unteransprüchen, der nachfolgenden Beschreibung und der Zeichnung.
Das erfindungsgemäße Verfahren ist ein Verfahren zur elektri- sehen Kontaktierung eines Bauteils, welches zumindest einen elektrischen Kontakt aufweist. Bei dem erfindungsgemäßen Verfahren wird an den zumindest einen Kontakt zumindest ein offenporiges Kontaktstück galvanisch angebunden. Die Offenpo- rigkeit des Kontaktstücks liefert zahlreiche Durchlässe für Elektrolytflüssigkeit, welche somit von außen an die Grenzfläche von Kontaktstück und elektrischem Kontakt des Bauteils gelangen kann. Idealerweise weist das offenporige Material des Kontaktstücks eine offenzellige Struktur auf, durch welche hindurch Elektrolytflüssigkeit besonders effizient pas- sieren kann.
Das erfindungsgemäße Verfahren kann vorteilhaft ohne großen Temperatureintrag in zu kontaktierende Bauteile, welche zumindest potentiell wärmeanfällig sind, durchgeführt werden, da galvanische Verfahren regelmäßig bei verhältnismäßig niedrigen Temperaturen von höchstens 150 °C durchgeführt werden.
Auch lassen sich mittels des erfindungsgemäßen Verfahrens hohe Druckbelastungen von Bauteilen leicht vermeiden, da zur Durchführung von galvanischen Verfahren keine oder allenfalls geringe Druckkräfte erforderlich sind.
Vorteilhafterweise lassen sich mittels des erfindungsgemäßen Verfahrens dauerelastische, federnde Kontaktierungen sehr leicht verwirklichen, da gerade offenporige Materialien regelmäßig elastische, federnde Materialeigenschaften aufweisen .
Unter der Wendung „galvanisch angebunden" im Sinne dieser An- meidung wird insbesondere „mittels Galvanotechnik angebunden" oder „mittels Galvanisierens angebunden" verstanden; die galvanische Anbindung erfolgt bevorzugt mittels Elektrolytflüssigkeit, insbesondere mittels eines elektrolytischen Bades. Vorzugsweise wird bei dem erfindungsgemäßen Verfahren Elektrolytflüssigkeit in offene Poren des offenporigen Kontaktstücks eingebracht. Unter der Wendung „offenporiges Kontaktstück" im Sinne dieser Anmeldung wird insbesondere ein Kontaktstück verstanden, bei welchem Poren von außen ins Innere des Kontaktstücks hineinführen . Bevorzugt wird bei dem erfindungsgemäßen Verfahren das Kontaktstück galvanisch angebunden, wobei ein solches Material abgeschieden wird, welches gleich einem solchen Material ist, mit welchem das Kontaktstück und/oder der elektrische Kontakt des Bauteils gebildet ist.
Vorteilhaft wird bei dem erfindungsgemäßen Verfahren ein solches Bauteil herangezogen, bei welchem der zumindest eine Kontakt, zumindest für sich betrachtet, ein Flachteil ist. Alternativ oder zusätzlich weist der Kontakt vorzugsweise ei- ne Kontaktfläche auf, deren größte flächige Erstreckung größer ist als eine Erstreckung des Kontakts senkrecht zu dieser Kontaktfläche .
Gerade bei der Kontaktierung von Flächenkontakten erweist sich das erfindungsgemäße Verfahren als besonders vorteilhaft, da mittels dieses Verfahrens eine flächige Kontaktierung ohne Weiteres realisierbar ist. Insbesondere lassen sich auf diese Weise wärmespreizende Kontaktierungen leicht erzielen, da flächige Kontakte bereits aufgrund der räumlichen Ge- ometrie eine starke Wärmespreizung bedingen. Auch die zur
Wärmespreizung erforderliche Wärmeleitfähigkeit ist regelmäßig gegeben, da eine zur Kontaktierung erforderliche gute elektrische Leitfähigkeit sowie eine für eine Wärmespreizung wünschenswerte gute thermische Leitfähigkeit für typische Ma- terialien regelmäßig miteinander einhergehen.
Geeigneterweise wird bei dem erfindungsgemäßen Verfahren als zumindest ein Kontaktstück ein elektrisch leitfähiges Kon- taktstück herangezogen. In dieser Weiterbildung des erfindungsgemäßen Verfahrens lassen sich die Kontaktierungen sehr rasch realisieren, da lediglich eine elektrisch leitende An- bindung mittels des an der Kontaktstelle abgeschiedenen Mate- rials bewerkstelligt werden muss. Größere Materialmengen abzuscheiden ist in dieser Weiterbildung des erfindungsgemäßen Verfahrens entbehrlich, da das Kontaktstück selbst bereits einen großflächigen Leitungspfad darstellt. In einer vorteilhaften Weiterbildung des erfindungsgemäßen Verfahrens ist das zumindest eine, offenporige Kontaktstück aus oder mit porösem Material gebildet.
Vorteilhafterweise ist bei dem erfindungsgemäßen Verfahren das zumindest eine offenporige Kontaktstück aus oder mit Metall, insbesondere Nickel und/oder Silber und/oder Gold und/oder Zinn und/oder Kupfer, gebildet.
Zweckmäßig ist bei dem erfindungsgemäßen Verfahren das zumin- dest ein offenporiges Kontaktstück mit einer gewebeartigen und/oder schaumartigen und/oder netzartigen Struktur gebildet .
In einer vorteilhaften Weiterbildung des erfindungsgemäßen Verfahrens wird das zumindest eine offenporige Kontaktstück bei einer solchen Temperatur galvanisch an den Kontakt angebunden, welche höchstens 100°C, vorzugsweise höchstens 60°C, insbesondere höchstens 20°C und zweckmäßig höchstens 5°C beträgt und/oder von der Betriebstemperatur des Bauteils um höchstens 20°C, vorzugsweise um höchstens 10°C, insbesondere um höchstens 5°C und idealerweise um höchstens 2°C, abweicht. Beim Betreiben bei niedrigen Temperaturen lässt sich der Temperatureintrag in das Bauteil bei der Durchführung des Verfahrens ganz besonders gering halten. Gerade für temperatur- anfällige Komponenten ist diese Weiterbildung des erfindungsgemäßen Verfahrens besonders vorzuziehen. Ferner ist das Bauteil bei möglichst geringem Temperaturunterschied von galvanischer Anbindung und späterer Betriebstemperatur besonders spannungsarm angebunden. Bei vorgesehenen Betriebstemperaturen des Bauteils bei Temperaturen größer als 100°C lässt sich die galvanische Anbindung bei Temperaturen von mehr als 100 °C durchführen, wobei dann salzschmelzbasierte Metallabschei - dungsverfahren zweckmäßigerweise zum Einsatz kommen.
Geeigneterweise wird bei dem erfindungsgemäßen Verfahren das zumindest ein offenporiges Kontaktstück mittels eines elektrochemischen Galvanik-Verfahrens galvanisch angebunden.
In dieser Weiterbildung des erfindungsgemäßen Verfahrens wird vorteilhaft ein elektrisch leitfähiges Kontaktstück herangezogen, wobei mittels des elektrochemischen Galvanik- Verfahrens Metall auf den Kontaktstück abgeschieden wird. Zweckmäßig wird bei dem erfindungsgemäßen Verfahren eine Anode genutzt, die mit einem solchen Metall gebildet ist, welches bei dem Verfahren auf dem Kontaktstück abgeschieden werden soll. Vorteilhaft ist dieses Metall Kupfer. Alternativ und ebenfalls vorteilhaft wird als Metall Nickel und/oder Silber und/oder Gold und/oder Zinn verwendet.
Alternativ und ebenfalls bevorzugt wird bei dem erfindungsgemäßen Verfahren das zumindest eine offenporige Kontaktstück mittels eines außenstromfreien Verfahrens galvanisch angebun- den, insbesondere mittels Austausch-Metallisierung und/oder mittels Reduktions-Metallisierung und/oder mittels Kontakt- Metallisierung. Vorteilhafterweise kann beim außenstromfreien Galvanik-Verfahren das Abscheiden von Metall bei einer Betriebstemperatur erfolgen, welche etwa gleich der späteren Betriebstemperatur des Bauteils ist. Dadurch werden mechanische Spannungen verringert oder vermieden. Ferner kann auch ein Korrosionsschutz verwirklicht werden, insbesondere durch das Galvanisieren von Nickel oder Nickel und Gold. Ein weiterer Vorteil des außenstromfreien Verfahrens ist es, dass das Bauteil selbst nicht elektrisch kontaktiert sein muss. Somit sind aufwendige Abscheidungen von Saatschichten (engl. „Seed layers") und Ankontaktiermaßnahmen nicht erforderlich. Zweckmäßig wird in einer vorteilhaften Weiterbildung des erfindungsgemäßen Verfahrens ein Kontaktstück herangezogen, welches zunächst als solches keinen durchgängigen Leitungspfad ausbildet, streng genommen also nicht makroskopisch leitfähig ist. Vielmehr weist das Kontaktstück eine Vielzahl von Metallinseln auf, welche gewissermaßen als Metallisierungsinseln während des, zweckmäßig außenstromfreien, Galva- nisierungsverfahrens erst einen durchgängigen Leitungspfad ausbilden .
Vorzugsweise wird bei dem erfindungsgemäßen Verfahren das Bauteil mittels des Kontaktstücks mit einem weiteren Bauelement und/oder Stromleiter und/oder mit einem Substrat kontaktiert, wonach das Kontaktstück und/oder das Bauteil und/oder das weitere Bauelement und/oder Stromleiter und/oder Substrat mit einer elektrischen Isolationsschicht versehen werden.
Vorteilhaft wird bei dem erfindungsgemäßen Verfahren die Isolationsschicht mittels Gießen und/oder Molden und/oder aus oder mit Siloxanen und/oder Polymeren gebildet.
In einer vorteilhaften Weiterbildung des erfindungsgemäßen Verfahrens wird als Bauteil ein Leistungsbauteil herangezogen .
Geeigneterweise wird bei dem erfindungsgemäßen Verfahren als Bauteil ein Bauteil mit mindestens einem Transistor, vorzugsweise einem Bipolartransistor mit isolierter Gate-Elektrode (engl. „ insulated-gate bipolar transistorn : IGBT) herangezo- gen.
Bevorzugt wird bei dem erfindungsgemäßen Verfahren ein Bauteil mit zwei Kontakten, vorzugsweise an einander abgewandten Seiten, insbesondere Flachseiten, des Bauteils, herangezogen, wobei zumindest ein offenporiges Kontaktstück an diese Kontakte galvanisch angebunden wird, insbesondere zumindest ein offenporiges Kontaktstück je Kontakt, vorzugsweise jeweils nach einem erfindungsgemäßen Verfahren wie zuvor beschrieben. Das erfindungsgemäße Bauteilmodul weist ein Bauteil mit zumindest einem elektrischen Kontakt auf. An dem elektrischen Kontakt ist erfindungsgemäß zumindest ein offenporiges Kon- taktstück galvanisch angebunden.
Besonders vorteilhaft ist das erfindungsgemäße Bauteilmodul - mittels eines erfindungsgemäßen Verfahrens wie oben beschrieben gebildet.
In einer Weiterbildung des erfindungsgemäßen Bauteilmoduls ist dieses stapelartig in der Art eines Stacks realisiert, wobei die Ebenen dieses Stacks mittels Leiterplatten und/oder Substraten gebildet sind, an welchen Bauteile mittels Kon- taktstücken angebunden sind. Zweckmäßig sind dazu die Kontakte von Bauteilen sämtlicher Ebenen zeitgleich mittels des erfindungsgemäßen Verfahrens kontaktiert.
In einer weiteren Weiterbildung des erfindungsgemäßen Bau- teilmoduls sind mehrere Bauteile gemeinsam an einer Flachseite eines Substrats oder einer Leiterplatte an dieses oder diese angebunden. Auch in dieser Weiterbildung können die mehreren Bauteile zeitgleich mittels des erfindungsgemäßen Verfahrens kontaktiert.
Nachfolgend wird die Erfindung anhand eines in der Zeichnung dargestellten Ausführungsbeispiels näher erläutert. Es zeigen : Fig. 1 eine Anordnung eines Leistungsbauteils an einem
Keramiksubstrat vor der Durchführung eines ersten Ausführungsbeispiels des erfindungsgemäßen Verfahrens zur Herstellung eines ersten Ausführungsbeispiels eines erfindungsgemäßen Bauteilmoduls in ei- ner Prinzipskizze im Querschnitt,
Fig. 2 die Anordnung des Leistungsbauteils gem. Fig. 1 bei einer Durchführung eines ersten Schrittes des er- findungsgemaßen Verfahrens in einer Prinzipskizze im Querschnitt,
Fig. 3 die Anordnung des Leistungsbauteils gem. Fig. 1
nach Durchführung des ersten Schrittes des erfindungsgemäßen Verfahrens in einer Prinzipskizze im Querschnitt ,
Fig. 4 eine Ausschnittsvergrößerung (A) aus Fig. 3 zusam- men mit einer Einzelheit (B) aus dieser
Ausschnittsvergrößerung,
Fig. 5 das erfindungsgemäße Bauteilmodul nach den Verfahrensschritten gemäß der Figuren 1 bis 4 in einer Prinzipskizze im Querschnitt,
Fig. 6 ein weitere einer Anordnung eines Leistungsbauteils an einem Keramiksubstrat vor der Durchführung eines weiteren Ausführungsbeispiels des erfindungsgemäßen Verfahrens zur Herstellung eines weiteren Ausführungsbeispiels des erfindungsgemäßen Bauteilmoduls in einer Prinzipskizze im Querschnitt,
Fig. 7 die Anordnung des Leistungsbauteils gem. Fig. 6 bei einer Durchführung eines ersten Schrittes des weiteren Ausführungsbeispiels des erfindungsgemäßen Verfahrens in einer Prinzipskizze im Querschnitt sowie Fig. 8 das weitere Ausführungsbeispiel des erfindungsgemäßen Bauteilmoduls nach den Verfahrensschritten gemäß den Figuren 6 und 7 in einer Prinzipskizze im Querschnitt .
Das in Fig. 1 dargestellte Leistungsbauteil 10 ist ein
Bipolartransistor mit isolierter Gate-Elektrode (engl.
„ insulated-gate bipolar transistorn : IGBT) und weist eine erste 20 und eine zweite Flachseite 30 auf, welche voneinan der abgewandt sind. Entlang der ersten 20 und zweiten Flachseite 30 erstrecken sich dünnschichtartige Flächenkontakte 40, 50 des Leistungsbauteils 10, welche als flächige Chipmetallisierungen ausgebildet sind. Im dargestellten Ausfüh- rungsbeispiel besteht der in Fig. 1 oberseitig angeordnete Flächenkontakt 40 des Leistungsbauteils 10 aus Kupfer, während der unterseitig angeordnete Flächenkontakt 50 des Leistungsbauteils 10 aus Silber besteht. Grundsätzlich können oberseitige Flächenkontakte auch aus oder mit Silber oder aus oder mit AlSiCu, sonstigen Metallen oder anderen elektrisch leitenden Materialien gebildet sein, während die unterseitigen Flächenkontakte auch aus oder mit Gold oder anderen Metallen oder anderen elektrisch leitenden Materialien gebildet sein können.
Zur Kontaktierung dieser Flächenkontakte 40, 50 werden an den Flächenkontakten 40, 50 Kontaktstücke 60, 70 offenporigen Materials platziert, welche sich im Wesentlichen flächig entlang der Flächenkontakte 40, 50 erstrecken. Im dargestellten Ausführungsbeispiel sind die Kontaktstücke 60, 70 leitfähig ausgebildet und als Kupferschwämme realisiert. Es versteht sich, dass in weiteren, nicht eigens dargestellten Ausführungsbeispielen, welche im Übrigen den anhand der Figuren erläuterten Ausführungsbeispielen entsprechen, die offenporigen Kontaktstücke 60, 70 auch aus sonstigen offenporigen leitfähigen Materialien bestehen können, etwa als Netze oder Gewebe oder sonstigen porösen Strukturen ausgebildete Aluminium-, Ti- oder aus oder mit sonstigen Metallen gebildete Kontaktstücke. Beispielsweise können auch mit leitfähigen Materia- lien bereichsweise beschichtete oder mit leitfähigen Partikeln versetzte Polymerschwämme als Kontaktstücke herangezogen werden .
Eines der Flächenkontakte 50 des Leistungsbauteils 10 ist ei- nem weiteren Flächenkontakt 80 eines Keramiksubstrats 90 mit einem Keramikkern 100 aus Aluminiumnitrid (A1N) zugewandt. Grundsätzlich kann der Keramikkern 100 in weiteren, nicht eigens gezeigten Ausführungsbeispielen aus einem anderen kera- mischen Material, oder aber aus Leiterplattenmaterialien wie FR 4 oder anderen Trägern aus Silikon und/oder Epoxy bestehen. Der weitere Flächenkontakt 80 des Keramiksubstrats 90 ist als oberflächliche Substratmetallisierung, im dargestell- ten Ausführungsbeispiel als kupferne Substratmetallisierung, ausgebildet. Der dem Keramiksubstrat 90 zugewandte Flächenkontakt 50 des Leistungsbauteils 10 und der weitere Flächenkontakt 80 des Keramiksubstrats 90 erstrecken sich zueinander parallel und bilden folglich einen ebenen Spalt aus. Das an jenem dem Keramiksubstrat 90 zugewandten Flächenkontakt 50 angeordnete Kontaktstück 70 füllt diesen ebenen Spalt vollständig aus und liegt vollflächig an diesem Flächenkontakt 50 des Leistungsbauteils 10 sowie an dem weiteren Flächenkontakt 80 des Keramiksubstrats 90 an. Das Kontaktstück 70 ist somit zur Kontaktierung von Leistungsbauteil 10 und Keramiksubstrat 90 angeordnet.
Die offenporigen Kontaktstücke 60, 70 werden in einem weiteren Verfahrensschritt mit Elektroden 110, 120 kontaktiert (Fig. 2) . Dazu wird einerseits eine erste Elektrode 110 an demjenigen Kontaktstück 60, welches an jenem dem Keramiksubstrat 90 abgewandten Flächenkontakt 40 angeordnet ist, an dessen - dem Leistungsbauteil 10 fernen - Außenseite 130 elektrisch kontaktiert. Eine weitere, zweite, Elektrode 120 wird an demjenigen kupfernen Flächenkontakt 80 elektrisch kontaktiert, welche an dem zwischen Leistungsbauteil 10 und Keramiksubstrat 90 befindlichen Kontaktstück befindlich ist. Die erste Elektrode 110 wirkt zugleich als Fixierungselement, welches die Fixierung des aus Leistungsbauteil 10, Keramik- Substrat 90 und Kontaktstücken 60, 70 gebildeten Leistungsmoduls während des erfindungsgemäßen Verfahrens gewährleistet. Dazu wird die erste Elektrode 110 mittels einer nicht im Einzelnen gezeigten Spannvorrichtung in Richtung des
Keramiksubstrats 90 kraftbeaufschlagt. Alternativ kann in ei- nem weiteren Ausführungsbeispiel, welches im Übrigen dem dargestellten Ausführungsbeispiel entspricht, die Elektrode 110 nicht als Fixierungselement ausgebildet sein, wobei die Fixierung der Kontaktstücke 60, 70 stattdessen mittels eines leitfähigen Klebers erfolgt. Infolge der Leitfähigkeit des Klebers lassen sich die Kontaktstücke 60, 70 einfach elektrisch kontaktieren. Infolge der Kontaktierung der offenporigen Kontaktstücke mit Elektroden 110, 120 scheidet sich mittels - an sich bekannter - elektrochemischer Galvanisierung Metall, im dargestellten Ausführungsbeispiel Kupfer, im Bereich zwischen den offenporigen Kontaktstücken 60, 70 und den Flächenkontakten 40, 50, 80 ab (Fig. 3) . Im dargestellten Ausführungsbeispiel bildet das abgeschiedene Material Schichten 132, 134, 136, welche sich flächig entlang der Chipmetallisierungen oder
Keramiksubstratmetallisierungen sowie den Kontaktstücken 60, 70 erstrecken. Infolge dieser Abscheidung verbinden sich zu- gleich jeweils die offenporigen Kontaktstücke 60, 70 mit dem Leistungsbauteil 10. Sämtliche Kontaktstücke 60, 70 verbinden sich dabei zeitgleich mit den jeweiligen Kontakten 40, 50, 80, an welchen sie jeweils anliegen. Ein nach dem zuvor beschriebenen Ausführungsbeispiel realisierter Bauteilkontakt von Leistungsbauteil 10, Kontaktstück 70 und Keramiksubstrat 90 ist in Fig. 4 A vergrößert in einem realitätstreuen Ausschnitt gezeigt. Der Ausschnitt zeigt die Anbindung des zwischen Leistungsbauteil 10 und Keramik- Substrat 90 befindlichen Kontaktstücks 70. Die Einzelheit Fig. 4 B stellt die Anbindung des Kontaktstücks 70 an das Leistungsbauteil 10 dar. Es ist erkennbar, dass zwischen der dem Leistungsbauteil 10 zugewandten Seite 140 des Kontaktstücks 70 und der dem Kontaktstück 70 zugewandten Seite 150 der Chipmetallisierung des Leistungsbauteils 10 im Verlauf der galvanischen Anbindung ein Kornwachstum von zwischenliegendem Kupfer stattgefunden hat, welcher den zwischenliegenden Bereich 160 metallisch ausfüllt. In einem nachfolgenden Bearbeitungsschritt werden die aus Keramiksubstrat 90 und ankontaktiertem Leistungsbauteil 10 gebildeten erfindungsgemäßen Leistungsmodule mit Isoliermaterial 170, im dargestellten Fall ein Siloxan, umhüllt (Fig. 5) . In weiteren, nicht eigens dargestellten Ausführungsbeispielen, welche im Übrigen den dargestellten entsprechen, wird ein anderes Isoliermaterial 170 genutzt, beispielsweise ein Polymer.
In einem weiteren in den Figuren 6 bis 8 dargestellten Ausführungsbeispiel wird anstelle eines elektrochemischen Galva- nisierungsverfahrens ein außenstromfreies Galvanisierungsver- fahren genutzt. Dementsprechend unterscheidet sich dieses Ausführungsbeispiel vom in den Figuren 1 bis 5 gezeigten Ausführungsbeispiel darin, dass - wie an sich bekannt - eine Kontaktierung mit Elektroden 110, 120 für außenstromfreie Galvanisierungsverfahren nicht erforderlich ist. Folglich ist anstelle der ersten Elektrode 110 lediglich ein Fixierungs- element 180 vorhanden (Fig. 6) . Das Fixierungselement 180 ist mittels einer nicht im Einzelnen gezeigten Spannvorrichtung in Richtung des Keramiksubstrats 90 kraftbeaufschlagt, sodass das Leistungsmodul während des Verfahrens zusammengehalten wird. Alternativ ist in einem weiteren Ausführungsbeispiel, welches im Übrigen dem dargestellten Ausführungsbeispiel entspricht, kein Fixierungselement 180 vorgesehen, wobei die Fixierung der Kontaktstücke 60 λ, 70' stattdessen mittels eines Klebers (etwa mittels eines kleinen Klebepunktes) erfolgt. Mittels des außenstromfreien Galvanisierungsverfahrens scheidet sich mittels an sich bekannter Weise Metall, im dargestellten Ausführungsbeispiel Kupfer, im Bereich zwischen den offenporigen Kontaktstücken 60 λ, 70' und dem Leistungsbauteil 10 ab (Fig. 7) . Im dargestellten Ausführungsbeispiel bildet das abgeschiedene Material Schichten, welche sich flächig entlang der Chipmetallisierungen oder Keramiksubstratmetallisierungen sowie den Kontaktstücken 60 λ, 70' erstrecken. Infolge dieser Abscheidung verbinden sich zugleich jeweils die offenporigen Kontaktstücke 60', 70' mit dem Leistungsbauteil 10.
In einem weiteren Ausführungsbeispiel, welches im Übrigen dem anhand der Figuren 6 bis 8 erläuterten Ausführungsbeispiel entspricht, wird ein Kontaktstück herangezogen, welches zunächst als solches keinen durchgängigen Leitungspfad ausbildet. Vielmehr weist das Kontaktstück eine Vielzahl von kupfernen Metallinseln auf, welche gewissermaßen als Metallisie- rungsinseln während des außenstromfreien Galvanisierungsver- fahrens wie zuvor beschrieben erst einen durchgängigen Leitungspfad ausbilden.
In einem nachfolgenden Bearbeitungsschritt werden die aus Keramiksubstrat 90 und ankontaktiertem Leistungsbauteil 10 gebildeten erfindungsgemäßen Leistungsmodule mit Isoliermaterial 170, im dargestellten Fall ein Siloxan, umhüllt (Fig. 8) . In weiteren, nicht eigens dargestellten Ausführungsbeispielen, welche im Übrigen den dargestellten entsprechen, wird ein anderes Isoliermaterial 170 genutzt, beispielsweise ein Polymer.
Analog zu den oben beschriebenen Ausführungsbeispielen kann in weiteren Ausführungsbeispielen das galvanisierte Metall anstelle von Kupfer auch ein anderes Metall sein.
In weiteren, nicht eigens dargestellten Ausführungsbeispielen kann ein erfindungsgemäßes Leistungsmodul stapelartig mit mehreren gestapelten Keramik- oder sonstigen Substraten in der Art eines Stacks realisiert sein. Elektronische Kontaktierungen können in mehreren Ebenen zeitgleich mittels des erfindungsgemäßen Verfahrens durchgeführt sein. Alternativ oder zusätzlich können auch in einer einzelnen Ebene mehrere Bauteile mittels des erfindungsgemäßen Verfahrens zeitgleich kontaktiert sein.

Claims

Patentansprüche
1. Verfahren zur elektrischen Kontaktierung eines Bauteils (10) mit zumindest einem elektrischen Kontakt (40, 50), bei welchem an den zumindest einen Kontakt (40, 50) zumindest ein offenporiges Kontaktstück (60, 70, 60 λ, 70 galvanisch angebunden wird.
2. Verfahren nach Anspruch 1, bei welchem ein solches Bauteil (10) herangezogen wird, bei welchem der zumindest eine Kontakt (40, 50), zumindest für sich betrachtet, ein Flachteil ist und/oder eine Kontaktfläche aufweist, deren größte flächige Erstreckung größer ist als eine Erstreckung des Kontakts senkrecht zur Kontaktfläche.
3. Verfahren nach Anspruch 1, bei welchem als das zumindest eine Kontaktstück (60, 70, 60 λ, 70') ein elektrisch leitfähiges Kontaktstück (60, 70, 60 λ, 70 herangezogen wird.
4. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem das zumindest eine offenporige Kontaktstück (60, 70, 60 λ, 70 aus oder mit porösem Material gebildet ist.
5. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem das zumindest eine offenporige Kontaktstück (60, 70, 60 λ, 70 aus oder mit Metall, insbesondere Nickel und/oder Silber und/oder Gold und/oder Zinn und/oder Kupfer, gebildet ist .
6. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem das zumindest eine offenporige Kontaktstück (60, 70, 60 λ, 70 mit einer gewebeartigen und/oder schaumartigen und/oder netzartigen Struktur gebildet ist.
7. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem das zumindest eine offenporige Kontaktstück (60, 70, 60 λ, 70 bei einer solchen Temperatur galvanisch an den Kontakt (40, 50) angebunden wird, welche höchstens 100°C, vor- zugsweise höchstens 60 °C, zweckmäßig höchtens 20 °C und idealerweise höchstens 5° C beträgt und/oder von der Betriebstemperatur des Bauteils um höchstens 50 °C, vorzugsweise um höchstens 20 °C, insbesondere um höchstens 10 °C und idealer- weise um höchstens 5 °C, vorzugsweise höchstens 2°C, abweicht .
8. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem das zumindest eine offenporige Kontaktstück (60, 70, 60 λ, 70 mittels eines elektrochemischen Galvanik-Verfahrens galvanisch angebunden wird.
9. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem das zumindest eine offenporige Kontaktstück (60, 70, 60 λ, 70 mittels eines außenstromfreien Verfahrens galvanisch angebunden wird, insbesondere mittels Austausch- Metallisierung und/oder mittels Reduktions-Metallisierung und/oder mittels Kontakt-Metallisierung.
10. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem das Bauteil (10) mittels des Kontaktstücks (60, 70, 60 λ, 70 mit einem weiteren Bauelement und/oder Stromleiter und/oder mit einem Substrat (90) kontaktiert wird, wonach das Kontaktstück (60, 70, 60 70 und/oder das Bauteil (10) und/oder das weitere Bauelement und/oder Stromleiter und/oder Substrat (90) mit einer elektrischen Isolationsschicht (170) versehen werden.
11. Verfahren nach dem vorhergehenden Anspruch, bei welchem die Isolationsschicht (170) mittels Gießen und/oder Molden und/oder aus oder mit Siloxanen und/oder Polymeren gebildet wird .
12. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem als Bauteil (10) ein Leistungsbauteil herangezogen wird .
13. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem als Bauteil (10) ein Bauteil mit mindestens einem Transistor, vorzugsweise einem IGBT, herangezogen wird.
14. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem ein Bauteil (10) mit zwei Kontakten (40, 50), vorzugsweise an einander abgewandten Seiten, insbesondere Flachseiten, des Bauteils (10) , herangezogen wird, wobei je Kontakt (40, 50) zumindest ein offenporiges Kontaktstück (60, 70, 60 λ, 70 an dieser galvanisch angebunden wird, vorzugsweise nach einem Verfahren nach den Ansprüchen 2 bis 12.
15. Bauteilmodul mit einem Bauteil mit zumindest einer elektrischen Kontakt (40, 50), an welchem zumindest ein offenpori- ges Kontaktstück (60, 70, 60 λ, 70 galvanisch angebunden ist .
16. Bauteilmodul nach dem vorhergehenden Anspruch, welches mittels eines Verfahrens nach einem der vorhergehenden An- Sprüche gebildet ist.
EP16726297.1A 2015-06-01 2016-05-23 Verfahren zur elektrischen kontaktierung eines bauteils mittels galvanischer anbindung eines offenporigen kontaktstücks und entsprechendes bauteilmodul Withdrawn EP3281218A1 (de)

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017203132A1 (de) * 2017-02-06 2018-08-09 Siemens Aktiengesellschaft Leistungsmodul
DE102017211619A1 (de) 2017-02-08 2018-08-09 Siemens Aktiengesellschaft Verfahren zur elektrischen Kontaktierung und Leistungsmodul
WO2018145968A1 (de) * 2017-02-09 2018-08-16 Siemens Aktiengesellschaft Leistungsmodul
DE102020134563A1 (de) 2020-12-22 2022-06-23 Danfoss Silicon Power Gmbh Leistungsmodul und Verfahren zur Herstellung eines Leistungsmoduls
JP7282929B1 (ja) * 2022-01-07 2023-05-29 レノボ・シンガポール・プライベート・リミテッド 放熱構造の製造方法
EP4528809A1 (de) * 2023-09-22 2025-03-26 Nexperia B.V. Clip

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH387809A (de) 1961-11-17 1965-02-15 Bbc Brown Boveri & Cie Lötverbindung an einem Halbleiterelement
JPS5674932A (en) 1979-11-22 1981-06-20 Hitachi Ltd Semiconductor device and preparation method thereof
JPS5732422A (en) 1980-08-06 1982-02-22 Seiko Epson Corp Electrochromic display device
DE4328466C1 (de) 1993-08-24 1995-04-13 Siemens Ag Siloxanhaltiges Gießharzsystem
JP4259018B2 (ja) * 2002-01-22 2009-04-30 トヨタ自動車株式会社 半導体装置とその製造方法
JP4312465B2 (ja) 2003-01-23 2009-08-12 株式会社荏原製作所 めっき方法およびめっき装置
DE102004009296B4 (de) * 2004-02-26 2011-01-27 Siemens Ag Verfahren zum Herstellen einer Anordnung eines elektrischen Bauelements
JP2006010843A (ja) 2004-06-23 2006-01-12 Brother Ind Ltd 記録媒体の記録材除去装置
JP4596875B2 (ja) * 2004-10-06 2010-12-15 関西電力株式会社 樹脂で被覆した高耐電圧半導体装置及びその製造方法
US7453139B2 (en) 2005-12-27 2008-11-18 Tessera, Inc. Compliant terminal mountings with vented spaces and methods
JP4997837B2 (ja) 2006-06-12 2012-08-08 日産自動車株式会社 半導体素子の接合方法および半導体装置
US7626262B2 (en) * 2006-06-14 2009-12-01 Infineon Technologies Ag Electrically conductive connection, electronic component and method for their production
DE102007055017B4 (de) 2007-11-14 2010-11-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Verbinden zweier Fügeflächen und Bauteil mit zwei verbundenen Fügeflächen
JP2009164240A (ja) * 2007-12-28 2009-07-23 Panasonic Corp 半導体装置
JP2010106223A (ja) 2008-10-31 2010-05-13 Dow Corning Toray Co Ltd 電気・電子部品用封止・充填剤および電気・電子部品
DE102008055134A1 (de) 2008-12-23 2010-07-01 Robert Bosch Gmbh Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils
DE102009008926B4 (de) * 2009-02-13 2022-06-15 Danfoss Silicon Power Gmbh Verfahren zur Schaffung einer hochtemperatur- und temperaturwechselfesten Verbindung eines Halbleiterbausteins mit einem Verbindungspartner und einer Kontaktlasche unter Verwendung eines temperaturbeaufschlagenden Verfahrens
DE102011106294A1 (de) * 2011-07-01 2013-01-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur wiederlösbaren, stoffschlüssigen Verbindung mindestens zweier Körper und dessen Verwendung sowie entsprechende Verbundsysteme
JP2014097529A (ja) * 2012-10-18 2014-05-29 Fuji Electric Co Ltd 発泡金属による接合方法、半導体装置の製造方法、半導体装置
WO2015053356A1 (ja) * 2013-10-09 2015-04-16 学校法人早稲田大学 電極接続方法及び電極接続構造
WO2015086184A1 (en) 2013-12-13 2015-06-18 Abb Technology Ag Semiconductor stack arrangement and semiconductor module

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