EP3007231A4 - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number: EP3007231A4
Authority: EP; European Patent Office
Prior art keywords: semiconductor device; semiconductor
Prior art date: 2014-01-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP14878460.6A

Other languages

German (de)

French (fr)

Other versions

EP3007231A1 (en

EP3007231B1 (en

Inventor

Takayuki Shimatou

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fuji Electric Co Ltd

Original Assignee

Fuji Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2014-01-16

Filing date

2014-10-29

Publication date

2017-02-15

2014-10-29 Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd

2016-04-13 Publication of EP3007231A1 publication Critical patent/EP3007231A1/en

2017-02-15 Publication of EP3007231A4 publication Critical patent/EP3007231A4/en

2020-12-09 Application granted granted Critical

2020-12-09 Publication of EP3007231B1 publication Critical patent/EP3007231B1/en

Status Active legal-status Critical Current

2034-10-29 Anticipated expiration legal-status Critical

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/109—Reduced surface field [RESURF] PN junction structures
- H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/152—Source regions of DMOS transistors
- H10D62/154—Dispositions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/156—Drain regions of DMOS transistors
- H10D62/158—Dispositions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
- H10D62/292—Non-planar channels of IGFETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/141—VDMOS having built-in components
- H10D84/143—VDMOS having built-in components the built-in components being PN junction diodes
- H10D84/144—VDMOS having built-in components the built-in components being PN junction diodes in antiparallel diode configurations

EP14878460.6A 2014-01-16 2014-10-29 Semiconductor device Active EP3007231B1 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2014005880		2014-01-16
PCT/JP2014/078711 WO2015107742A1 (en)	2014-01-16	2014-10-29	Semiconductor device

Publications (3)

Publication Number	Publication Date
EP3007231A1 EP3007231A1 (en)	2016-04-13
EP3007231A4 true EP3007231A4 (en)	2017-02-15
EP3007231B1 EP3007231B1 (en)	2020-12-09

Family

ID=53542652

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP14878460.6A Active EP3007231B1 (en)	2014-01-16	2014-10-29	Semiconductor device

Country Status (6)

Country	Link
US (1)	US9620595B2 (en)
EP (1)	EP3007231B1 (en)
JP (1)	JP6146486B2 (en)
CN (1)	CN105378932B (en)
TW (1)	TWI626729B (en)
WO (1)	WO2015107742A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE102014116625B4 (en) *	2014-11-13	2020-06-18	Infineon Technologies Austria Ag	Vertical semiconductor device and method of manufacturing the same
JP6422906B2 (en) *	2016-03-11	2018-11-14	株式会社東芝	Semiconductor device
JP6844228B2 (en) *	2016-12-02	2021-03-17	富士電機株式会社	Semiconductor devices and methods for manufacturing semiconductor devices
CN109755289B (en) *	2017-11-01	2020-11-24	苏州东微半导体有限公司	Trench type super junction power device
JP7200488B2 (en) *	2018-03-19	2023-01-10	富士電機株式会社	insulated gate semiconductor device
JP7424782B2 (en) *	2019-09-27	2024-01-30	ローム株式会社	semiconductor equipment
JP7319496B2 (en) *	2020-03-17	2023-08-02	株式会社東芝	semiconductor equipment
CN113327982B (en) *	2021-05-20	2022-04-15	深圳市威兆半导体有限公司	Superjunction MOSFET devices and chips
CN117650165B (en) *	2023-10-31	2024-05-31	海信家电集团股份有限公司	Semiconductor device with a semiconductor device having a plurality of semiconductor chips

Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0435069A (en) *	1990-05-31	1992-02-05	Matsushita Electric Works Ltd	Field effect semiconductor device
FR2768858A1 (en) *	1997-09-22	1999-03-26	Sgs Thomson Microelectronics	Grid contact pad structure
US20060267092A1 (en) *	2005-05-31	2006-11-30	Lite-On Semiconductor Corp.	High power semiconductor device capable of preventing parasitical bipolar transistor from turning on
EP2124257A1 (en) *	2008-05-20	2009-11-25	Mitsubishi Electric Corporation	Power semiconductor device
US20100148268A1 (en) *	2006-09-28	2010-06-17	Sanyo Electric Co., Ltd.	Insulated-gate semiconductor device
US20130037852A1 (en) *	2011-08-12	2013-02-14	Renesas Electronics Corporation	Power mosfet, an igbt, and a power diode

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH05343692A (en)	1992-06-09	1993-12-24	Nec Corp	Vertical field-effect transistor
JP4058007B2 (en) *	2004-03-03	2008-03-05	株式会社東芝	Semiconductor device
JP4967236B2 (en) *	2004-08-04	2012-07-04	富士電機株式会社	Semiconductor element
JP5201307B2 (en) *	2005-12-22	2013-06-05	富士電機株式会社	Semiconductor device
JP5048273B2 (en) *	2006-05-10	2012-10-17	オンセミコンダクター・トレーディング・リミテッド	Insulated gate semiconductor device
JP2008085188A (en) *	2006-09-28	2008-04-10	Sanyo Electric Co Ltd	Insulated gate semiconductor device
WO2011013379A1 (en) *	2009-07-31	2011-02-03	Fuji Electric Systems Co., Ltd.	Semiconductor apparatus
US8492836B2 (en)	2009-10-14	2013-07-23	Mitsubishi Electric Corporation	Power semiconductor device
CN102870217B (en)	2010-04-06	2016-08-03	三菱电机株式会社	Power semiconductor apparatus and manufacture method thereof
JP5664142B2 (en) *	2010-11-09	2015-02-04	富士電機株式会社	Semiconductor device
JP5664302B2 (en)	2011-02-08	2015-02-04	株式会社デンソー	Semiconductor device
JP2013251513A (en) *	2012-06-04	2013-12-12	Toshiba Corp	Semiconductor device

2014
- 2014-10-29 CN CN201480038545.XA patent/CN105378932B/en active Active
- 2014-10-29 JP JP2015557710A patent/JP6146486B2/en active Active
- 2014-10-29 WO PCT/JP2014/078711 patent/WO2015107742A1/en active Application Filing
- 2014-10-29 EP EP14878460.6A patent/EP3007231B1/en active Active
2015
- 2015-01-09 TW TW104100715A patent/TWI626729B/en active
2016
- 2016-01-08 US US14/991,877 patent/US9620595B2/en active Active

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0435069A (en) *	1990-05-31	1992-02-05	Matsushita Electric Works Ltd	Field effect semiconductor device
FR2768858A1 (en) *	1997-09-22	1999-03-26	Sgs Thomson Microelectronics	Grid contact pad structure
US20060267092A1 (en) *	2005-05-31	2006-11-30	Lite-On Semiconductor Corp.	High power semiconductor device capable of preventing parasitical bipolar transistor from turning on
US20100148268A1 (en) *	2006-09-28	2010-06-17	Sanyo Electric Co., Ltd.	Insulated-gate semiconductor device
EP2124257A1 (en) *	2008-05-20	2009-11-25	Mitsubishi Electric Corporation	Power semiconductor device
US20130037852A1 (en) *	2011-08-12	2013-02-14	Renesas Electronics Corporation	Power mosfet, an igbt, and a power diode

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2015107742A1 *

Also Published As

Publication number	Publication date
WO2015107742A1 (en)	2015-07-23
JPWO2015107742A1 (en)	2017-03-23
TWI626729B (en)	2018-06-11
JP6146486B2 (en)	2017-06-14
EP3007231A1 (en)	2016-04-13
CN105378932A (en)	2016-03-02
US20160126314A1 (en)	2016-05-05
US9620595B2 (en)	2017-04-11
CN105378932B (en)	2017-10-31
TW201539710A (en)	2015-10-16
EP3007231B1 (en)	2020-12-09

Publication	Publication Date	Title
EP3144975A4 (en)	2018-03-14	Semiconductor device
EP3128550A4 (en)	2018-01-10	Semiconductor device
EP3264461A4 (en)	2018-11-14	Semiconductor device
EP3101685A4 (en)	2018-03-14	Semiconductor device
EP3043379A4 (en)	2017-08-02	Semiconductor device
EP3118896A4 (en)	2017-03-15	Semiconductor device
EP3171410A4 (en)	2017-07-26	Semiconductor device
EP3279926A4 (en)	2018-11-07	Semiconductor device
HK1224080A1 (en)	2017-08-11	Semiconductor device
EP3240125A4 (en)	2018-01-03	Semiconductor device
EP3276661A4 (en)	2018-11-21	Semiconductor device
HK1224079A1 (en)	2017-08-11	Semiconductor device
EP3285289A4 (en)	2018-11-07	Semiconductor device
EP3276653A4 (en)	2018-11-21	Semiconductor device
EP3276671A4 (en)	2018-11-14	Semiconductor device
HK1210874A1 (en)	2016-05-06	Semiconductor device
EP3116023A4 (en)	2017-12-06	Power semiconductor device
EP3007231A4 (en)	2017-02-15	Semiconductor device
EP3107123A4 (en)	2017-02-22	Semiconductor device
HK1223193A1 (en)	2017-07-21	Semiconductor device
EP3285288A4 (en)	2018-11-07	Semiconductor device
EP3122089A4 (en)	2017-11-08	Device
EP3217441A4 (en)	2018-06-13	Semiconductor light-emitting device
EP3255655A4 (en)	2018-10-03	Semiconductor device
EP3206302A4 (en)	2018-01-17	Reconfigurable semiconductor device

Legal Events

Date	Code	Title	Description
2016-03-11	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
2016-04-13	17P	Request for examination filed	Effective date: 20160107
2016-04-13	AK	Designated contracting states	Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
2016-04-13	AX	Request for extension of the european patent	Extension state: BA ME
2017-02-15	A4	Supplementary search report drawn up and despatched	Effective date: 20170118
2017-02-15	RIC1	Information provided on ipc code assigned before grant	Ipc: H01L 29/78 20060101AFI20170112BHEP Ipc: H01L 29/06 20060101ALI20170112BHEP Ipc: H01L 29/423 20060101ALI20170112BHEP
2017-04-19	DAX	Request for extension of the european patent (deleted)
2020-05-13	GRAP	Despatch of communication of intention to grant a patent	Free format text: ORIGINAL CODE: EPIDOSNIGR1
2020-05-13	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: GRANT OF PATENT IS INTENDED
2020-06-10	INTG	Intention to grant announced	Effective date: 20200514
2020-09-28	GRAS	Grant fee paid	Free format text: ORIGINAL CODE: EPIDOSNIGR3
2020-10-28	RIN1	Information on inventor provided before grant (corrected)	Inventor name: SHIMATOU, TAKAYUKI
2020-11-06	GRAA	(expected) grant	Free format text: ORIGINAL CODE: 0009210
2020-11-06	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE PATENT HAS BEEN GRANTED
2020-12-09	AK	Designated contracting states	Kind code of ref document: B1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
2020-12-09	REG	Reference to a national code	Ref country code: GB Ref legal event code: FG4D
2020-12-15	REG	Reference to a national code	Ref country code: AT Ref legal event code: REF Ref document number: 1344282 Country of ref document: AT Kind code of ref document: T Effective date: 20201215 Ref country code: CH Ref legal event code: EP
2020-12-31	REG	Reference to a national code	Ref country code: DE Ref legal event code: R096 Ref document number: 602014073289 Country of ref document: DE
2021-01-06	REG	Reference to a national code	Ref country code: IE Ref legal event code: FG4D
2021-04-30	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20210310 Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209 Ref country code: RS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209 Ref country code: NO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20210309
2021-05-15	REG	Reference to a national code	Ref country code: AT Ref legal event code: MK05 Ref document number: 1344282 Country of ref document: AT Kind code of ref document: T Effective date: 20201209
2021-05-31	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: BG Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20210309 Ref country code: LV Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209 Ref country code: SE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209
2021-06-17	REG	Reference to a national code	Ref country code: NL Ref legal event code: MP Effective date: 20201209
2021-06-30	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: NL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209 Ref country code: HR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209
2021-07-12	REG	Reference to a national code	Ref country code: LT Ref legal event code: MG9D
2021-07-30	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: CZ Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209 Ref country code: EE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209 Ref country code: SM Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209 Ref country code: LT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209 Ref country code: SK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209 Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20210409 Ref country code: RO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209
2021-08-31	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: PL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209 Ref country code: AT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209
2021-09-10	REG	Reference to a national code	Ref country code: DE Ref legal event code: R097 Ref document number: 602014073289 Country of ref document: DE
2021-09-30	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20210409
2021-10-15	PLBE	No opposition filed within time limit	Free format text: ORIGINAL CODE: 0009261
2021-10-15	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT
2021-10-29	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: AL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209 Ref country code: IT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209
2021-11-17	26N	No opposition filed	Effective date: 20210910
2021-11-30	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: ES Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209 Ref country code: DK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209 Ref country code: SI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209
2022-05-31	REG	Reference to a national code	Ref country code: CH Ref legal event code: PL
2022-06-01	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20210409
2022-06-23	REG	Reference to a national code	Ref country code: BE Ref legal event code: MM Effective date: 20211031
2022-06-29	GBPC	Gb: european patent ceased through non-payment of renewal fee	Effective date: 20211029
2022-06-30	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: MC Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209
2022-07-29	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: LU Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20211029 Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20211029 Ref country code: BE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20211031
2022-08-31	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20211031 Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20211031
2022-10-31	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: IE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20211029
2023-05-31	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: HU Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO Effective date: 20141029
2023-06-30	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209
2024-04-30	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: MK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209
2024-06-28	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: TR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209
2024-09-30	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: MT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201209
2024-10-16	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: FR Payment date: 20240909 Year of fee payment: 11
2024-11-22	REG	Reference to a national code	Ref country code: DE Ref legal event code: R079 Ref document number: 602014073289 Country of ref document: DE Free format text: PREVIOUS MAIN CLASS: H01L0029780000 Ipc: H10D0030600000
2025-01-10	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: DE Payment date: 20240904 Year of fee payment: 11