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EP2932532A4 - THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND SCREEN COMPRISING THE SAME - Google Patents

THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND SCREEN COMPRISING THE SAME

Info

Publication number
EP2932532A4
EP2932532A4 EP13862390.5A EP13862390A EP2932532A4 EP 2932532 A4 EP2932532 A4 EP 2932532A4 EP 13862390 A EP13862390 A EP 13862390A EP 2932532 A4 EP2932532 A4 EP 2932532A4
Authority
EP
European Patent Office
Prior art keywords
same
screen
thin film
film transistor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP13862390.5A
Other languages
German (de)
French (fr)
Other versions
EP2932532A1 (en
EP2932532B1 (en
Inventor
Sang Cheon Youn
Min Gu Cho
Se Yeoul Kwon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Display Co Ltd
Original Assignee
LG Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Display Co Ltd filed Critical LG Display Co Ltd
Publication of EP2932532A1 publication Critical patent/EP2932532A1/en
Publication of EP2932532A4 publication Critical patent/EP2932532A4/en
Application granted granted Critical
Publication of EP2932532B1 publication Critical patent/EP2932532B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
    • G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
EP13862390.5A 2012-12-12 2013-12-11 Thin film transistor, method for manufacturing the same, and display device comprising the same Active EP2932532B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20120144970 2012-12-12
KR1020130092414A KR102207063B1 (en) 2012-12-12 2013-08-05 Thin film transistor, method for manufacturing the same and display device comprising the same
PCT/KR2013/011440 WO2014092440A1 (en) 2012-12-12 2013-12-11 Thin film transistor, method for manufacturing the same, and display device comprising the same

Publications (3)

Publication Number Publication Date
EP2932532A1 EP2932532A1 (en) 2015-10-21
EP2932532A4 true EP2932532A4 (en) 2016-08-17
EP2932532B1 EP2932532B1 (en) 2023-06-14

Family

ID=51128793

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13862390.5A Active EP2932532B1 (en) 2012-12-12 2013-12-11 Thin film transistor, method for manufacturing the same, and display device comprising the same

Country Status (5)

Country Link
US (2) US9231107B2 (en)
EP (1) EP2932532B1 (en)
KR (1) KR102207063B1 (en)
CN (1) CN104854706B (en)
WO (1) WO2014092440A1 (en)

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CN110867469B (en) * 2014-03-17 2023-12-29 三星显示有限公司 Organic EL display device
CN110176482B (en) 2014-07-25 2023-08-08 株式会社半导体能源研究所 Display device and electronic equipment
KR101640192B1 (en) 2014-08-05 2016-07-18 삼성디스플레이 주식회사 Display apparatus
CN104536226B (en) * 2014-12-29 2018-03-30 上海天马微电子有限公司 Display panel and display device
KR101627815B1 (en) 2015-04-21 2016-06-08 인천대학교 산학협력단 An manufacturing method of a amorphous IGZO TFT-based transient semiconductor
CN104779171A (en) * 2015-05-05 2015-07-15 京东方科技集团股份有限公司 Low-temperature polycrystalline silicon thin film transistor, manufacturing method thereof, array substrate and display device
KR102448033B1 (en) 2015-12-21 2022-09-28 삼성디스플레이 주식회사 Method for forming thin film transistor, thin film transistor substrate, and flat panel display apparatus
CN105428243B (en) * 2016-01-11 2017-10-24 京东方科技集团股份有限公司 A kind of thin film transistor (TFT) and preparation method, array base palte and display device
KR102716494B1 (en) * 2016-03-18 2024-10-14 삼성디스플레이 주식회사 Thin film transistor substrate, display device comprising the same, and method for manufacturing thin film transistor substrate
CN107452748B (en) * 2016-06-01 2020-03-17 群创光电股份有限公司 Element substrate and display device
US10483285B2 (en) * 2016-06-01 2019-11-19 Innolux Corporation Element substrate and display device
CN105932067A (en) * 2016-06-07 2016-09-07 京东方科技集团股份有限公司 Top gate type film transistor, preparation method, array substrate and display panel
KR102676341B1 (en) * 2016-12-30 2024-06-17 엘지디스플레이 주식회사 Thin film transistor and method for manufacturing the same, and display device including the same
JP2018133404A (en) * 2017-02-14 2018-08-23 株式会社ジャパンディスプレイ Semiconductor device
CN107039351B (en) * 2017-04-05 2019-10-11 武汉华星光电技术有限公司 The production method and TFT substrate of TFT substrate
CN107425073A (en) * 2017-05-08 2017-12-01 京东方科技集团股份有限公司 A kind of thin film transistor (TFT) and preparation method, array base palte
US10461121B2 (en) 2017-10-17 2019-10-29 Shenzhen China Star Optoelectronics Technology Co., Ltd. Miniature led display panel and miniature led display
CN107871752B (en) * 2017-10-17 2019-11-15 深圳市华星光电技术有限公司 Micro LED Display Panel and Micro LED Display
US10249654B1 (en) * 2017-11-22 2019-04-02 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Manufacturing method of top-gate TFT and top-gate TFT
KR102649752B1 (en) 2017-12-22 2024-03-19 엘지디스플레이 주식회사 Display apparatus
KR102609512B1 (en) * 2018-06-27 2023-12-04 엘지디스플레이 주식회사 Panel, Display Device and Vehicle Mounted Display
CN108878539A (en) 2018-07-03 2018-11-23 京东方科技集团股份有限公司 Thin film transistor and its manufacturing method, array substrate and display panel
KR102546780B1 (en) 2018-12-28 2023-06-21 엘지디스플레이 주식회사 Thin film transistor comprising active layer having thickness difference and display apparatus comprising the same
KR20210123719A (en) * 2020-04-03 2021-10-14 삼성전자주식회사 Display module and manufacturing method thereof
KR102760217B1 (en) * 2020-06-26 2025-01-31 삼성디스플레이 주식회사 Thin film transistor substrate and display apparatus comprising the same
CN112086488B (en) * 2020-09-07 2022-07-12 武汉华星光电半导体显示技术有限公司 Display panel and manufacturing method thereof
CN112530978B (en) * 2020-12-01 2024-02-13 京东方科技集团股份有限公司 Switching device structure and preparation method thereof, thin film transistor film layer, display panel
CN117177620A (en) * 2021-05-12 2023-12-05 厦门天马微电子有限公司 Display panel and display device
CN115347000A (en) * 2022-08-03 2022-11-15 武汉华星光电技术有限公司 Array substrate and display panel

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US20090315026A1 (en) * 2008-06-18 2009-12-24 Samsung Mobile Display Co., Ltd. Thin film transistor, method of manufacturing the same, and flat panel display device haviing the same
US20100252832A1 (en) * 2009-04-02 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20120018727A1 (en) * 2010-07-26 2012-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

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Publication number Priority date Publication date Assignee Title
US20090294772A1 (en) * 2008-05-30 2009-12-03 Jong-Han Jeong Thin film transistor, method of manufacturing the same and flat panel display device having the same
US20090315026A1 (en) * 2008-06-18 2009-12-24 Samsung Mobile Display Co., Ltd. Thin film transistor, method of manufacturing the same, and flat panel display device haviing the same
US20100252832A1 (en) * 2009-04-02 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20120018727A1 (en) * 2010-07-26 2012-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

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Also Published As

Publication number Publication date
US20140159037A1 (en) 2014-06-12
KR102207063B1 (en) 2021-01-25
CN104854706B (en) 2020-10-16
CN104854706A (en) 2015-08-19
EP2932532A1 (en) 2015-10-21
US9231107B2 (en) 2016-01-05
EP2932532B1 (en) 2023-06-14
WO2014092440A1 (en) 2014-06-19
KR20140076471A (en) 2014-06-20
US20160087108A1 (en) 2016-03-24
US9478666B2 (en) 2016-10-25

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