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EP2831918A4 - ONO INTEGRATION METHOD IN LOGICAL CMOS FLOW - Google Patents

ONO INTEGRATION METHOD IN LOGICAL CMOS FLOW

Info

Publication number
EP2831918A4
EP2831918A4 EP13767491.7A EP13767491A EP2831918A4 EP 2831918 A4 EP2831918 A4 EP 2831918A4 EP 13767491 A EP13767491 A EP 13767491A EP 2831918 A4 EP2831918 A4 EP 2831918A4
Authority
EP
European Patent Office
Prior art keywords
ono
integration method
cmos flow
logical cmos
logical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13767491.7A
Other languages
German (de)
French (fr)
Other versions
EP2831918A1 (en
Inventor
Krishnaswamy Ramkumar
Bo Jin
Fredrick Jenne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cypress Semiconductor Corp
Original Assignee
Cypress Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/434,347 external-priority patent/US9102522B2/en
Application filed by Cypress Semiconductor Corp filed Critical Cypress Semiconductor Corp
Priority to EP21160971.4A priority Critical patent/EP3866199A1/en
Priority to EP16167775.2A priority patent/EP3166147A3/en
Publication of EP2831918A1 publication Critical patent/EP2831918A1/en
Publication of EP2831918A4 publication Critical patent/EP2831918A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/693—Vertical IGFETs having charge trapping gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6892—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
EP13767491.7A 2012-03-29 2013-03-13 ONO INTEGRATION METHOD IN LOGICAL CMOS FLOW Withdrawn EP2831918A4 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP21160971.4A EP3866199A1 (en) 2012-03-29 2013-03-13 Method of ono integration into a logic cmos process
EP16167775.2A EP3166147A3 (en) 2012-03-29 2013-03-13 Method of ono integration into logic cmos flow

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/434,347 US9102522B2 (en) 2009-04-24 2012-03-29 Method of ONO integration into logic CMOS flow
PCT/US2013/030874 WO2013148196A1 (en) 2012-03-29 2013-03-13 Method of ono integration into logic cmos flow

Related Child Applications (2)

Application Number Title Priority Date Filing Date
EP16167775.2A Division EP3166147A3 (en) 2012-03-29 2013-03-13 Method of ono integration into logic cmos flow
EP21160971.4A Division EP3866199A1 (en) 2012-03-29 2013-03-13 Method of ono integration into a logic cmos process

Publications (2)

Publication Number Publication Date
EP2831918A1 EP2831918A1 (en) 2015-02-04
EP2831918A4 true EP2831918A4 (en) 2015-11-18

Family

ID=49261024

Family Applications (3)

Application Number Title Priority Date Filing Date
EP21160971.4A Pending EP3866199A1 (en) 2012-03-29 2013-03-13 Method of ono integration into a logic cmos process
EP16167775.2A Withdrawn EP3166147A3 (en) 2012-03-29 2013-03-13 Method of ono integration into logic cmos flow
EP13767491.7A Withdrawn EP2831918A4 (en) 2012-03-29 2013-03-13 ONO INTEGRATION METHOD IN LOGICAL CMOS FLOW

Family Applications Before (2)

Application Number Title Priority Date Filing Date
EP21160971.4A Pending EP3866199A1 (en) 2012-03-29 2013-03-13 Method of ono integration into a logic cmos process
EP16167775.2A Withdrawn EP3166147A3 (en) 2012-03-29 2013-03-13 Method of ono integration into logic cmos flow

Country Status (6)

Country Link
EP (3) EP3866199A1 (en)
JP (1) JP6328607B2 (en)
KR (2) KR20190082327A (en)
CN (2) CN104321877B (en)
TW (2) TWI599020B (en)
WO (1) WO2013148196A1 (en)

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* Cited by examiner, † Cited by third party
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US8071453B1 (en) 2009-04-24 2011-12-06 Cypress Semiconductor Corporation Method of ONO integration into MOS flow
US9102522B2 (en) 2009-04-24 2015-08-11 Cypress Semiconductor Corporation Method of ONO integration into logic CMOS flow
US8883624B1 (en) 2013-09-27 2014-11-11 Cypress Semiconductor Corporation Integration of a memory transistor into high-K, metal gate CMOS process flow
CN104617100A (en) * 2015-01-30 2015-05-13 武汉新芯集成电路制造有限公司 Sonos memory structure and manufacturing method thereof
US9218978B1 (en) * 2015-03-09 2015-12-22 Cypress Semiconductor Corporation Method of ONO stack formation
US10020317B2 (en) * 2015-08-31 2018-07-10 Cypress Semiconductor Corporation Memory device with multi-layer channel and charge trapping layer
US10242996B2 (en) 2017-07-19 2019-03-26 Cypress Semiconductor Corporation Method of forming high-voltage transistor with thin gate poly
US10636796B2 (en) * 2017-08-02 2020-04-28 Winbond Electronics Corp. Dynamic random access memory and method of fabricating the same
CN110416221B (en) * 2019-07-31 2022-02-22 上海华力微电子有限公司 Method for forming semiconductor device
US11488977B2 (en) 2020-04-14 2022-11-01 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and methods for forming the same
TWI773086B (en) * 2020-11-17 2022-08-01 大陸商長江存儲科技有限責任公司 Method for forming three-dimensional memory device

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US20060115978A1 (en) * 2004-11-30 2006-06-01 Michael Specht Charge-trapping memory cell and method for production
US8063434B1 (en) * 2007-05-25 2011-11-22 Cypress Semiconductor Corporation Memory transistor with multiple charge storing layers and a high work function gate electrode
US8071453B1 (en) * 2009-04-24 2011-12-06 Cypress Semiconductor Corporation Method of ONO integration into MOS flow

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US6093606A (en) * 1998-03-05 2000-07-25 Taiwan Semiconductor Manufacturing Company Method of manufacture of vertical stacked gate flash memory device
JP3955409B2 (en) * 1999-03-17 2007-08-08 株式会社ルネサステクノロジ Semiconductor memory device
JP3459240B2 (en) * 2001-06-22 2003-10-20 富士雄 舛岡 Semiconductor storage device
JP2004095918A (en) * 2002-08-30 2004-03-25 Fasl Japan Ltd Semiconductor storage device and method of manufacturing semiconductor device
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JP5356005B2 (en) * 2008-12-10 2013-12-04 株式会社東芝 Nonvolatile semiconductor memory device and manufacturing method thereof
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KR101548674B1 (en) * 2009-08-26 2015-09-01 삼성전자주식회사 Three-dimensional semiconductor memory device and manufacturing method thereof
JP5534748B2 (en) * 2009-08-25 2014-07-02 株式会社東芝 Nonvolatile semiconductor memory device and manufacturing method thereof
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US20060115978A1 (en) * 2004-11-30 2006-06-01 Michael Specht Charge-trapping memory cell and method for production
US8063434B1 (en) * 2007-05-25 2011-11-22 Cypress Semiconductor Corporation Memory transistor with multiple charge storing layers and a high work function gate electrode
US8071453B1 (en) * 2009-04-24 2011-12-06 Cypress Semiconductor Corporation Method of ONO integration into MOS flow

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Also Published As

Publication number Publication date
KR102079835B1 (en) 2020-02-20
CN108899273A (en) 2018-11-27
JP2015512567A (en) 2015-04-27
EP3166147A2 (en) 2017-05-10
WO2013148196A1 (en) 2013-10-03
CN104321877B (en) 2018-09-14
TWI648843B (en) 2019-01-21
KR20190082327A (en) 2019-07-09
TW201347150A (en) 2013-11-16
KR20150105186A (en) 2015-09-16
CN104321877A (en) 2015-01-28
EP2831918A1 (en) 2015-02-04
EP3866199A1 (en) 2021-08-18
EP3166147A3 (en) 2017-08-16
CN108899273B (en) 2024-02-09
TW201743437A (en) 2017-12-16
TWI599020B (en) 2017-09-11
JP6328607B2 (en) 2018-05-23

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