[go: up one dir, main page]

EP2351100A4 - NANOSTRUCTURED DEVICES - Google Patents

NANOSTRUCTURED DEVICES

Info

Publication number
EP2351100A4
EP2351100A4 EP09826444.3A EP09826444A EP2351100A4 EP 2351100 A4 EP2351100 A4 EP 2351100A4 EP 09826444 A EP09826444 A EP 09826444A EP 2351100 A4 EP2351100 A4 EP 2351100A4
Authority
EP
European Patent Office
Prior art keywords
nanostructured devices
nanostructured
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP09826444.3A
Other languages
German (de)
French (fr)
Other versions
EP2351100B1 (en
EP2351100A2 (en
Inventor
Brent A Buchine
Faris Modawar
Marcie R Black
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Silicon Group Technologies LLC
Original Assignee
Bandgap Engineering Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=42170599&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EP2351100(A4) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Bandgap Engineering Inc filed Critical Bandgap Engineering Inc
Priority to EP20150280.4A priority Critical patent/EP3664158A1/en
Publication of EP2351100A2 publication Critical patent/EP2351100A2/en
Publication of EP2351100A4 publication Critical patent/EP2351100A4/en
Application granted granted Critical
Publication of EP2351100B1 publication Critical patent/EP2351100B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146Superlattices; Multiple quantum well structures
    • H10F77/1465Superlattices; Multiple quantum well structures including only Group IV materials, e.g. Si-SiGe superlattices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1437Quantum wires or nanorods
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147Shapes of bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/70Surface textures, e.g. pyramid structures
    • H10F77/703Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14Photovoltaic cells having only PN homojunction potential barriers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
EP09826444.3A 2008-11-14 2009-11-16 Nanostructured devices Active EP2351100B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP20150280.4A EP3664158A1 (en) 2008-11-14 2009-11-16 Nanostructured devices

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11489608P 2008-11-14 2008-11-14
US15738609P 2009-03-04 2009-03-04
US25041809P 2009-10-09 2009-10-09
PCT/US2009/006119 WO2010056352A2 (en) 2008-11-14 2009-11-16 Nanostructured devices

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP20150280.4A Division EP3664158A1 (en) 2008-11-14 2009-11-16 Nanostructured devices

Publications (3)

Publication Number Publication Date
EP2351100A2 EP2351100A2 (en) 2011-08-03
EP2351100A4 true EP2351100A4 (en) 2016-05-11
EP2351100B1 EP2351100B1 (en) 2020-01-08

Family

ID=42170599

Family Applications (2)

Application Number Title Priority Date Filing Date
EP09826444.3A Active EP2351100B1 (en) 2008-11-14 2009-11-16 Nanostructured devices
EP20150280.4A Pending EP3664158A1 (en) 2008-11-14 2009-11-16 Nanostructured devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP20150280.4A Pending EP3664158A1 (en) 2008-11-14 2009-11-16 Nanostructured devices

Country Status (12)

Country Link
US (4) US8450599B2 (en)
EP (2) EP2351100B1 (en)
JP (1) JP5612591B2 (en)
KR (1) KR20110098910A (en)
CN (1) CN102282679B (en)
AU (1) AU2009314576B2 (en)
CA (1) CA2743743A1 (en)
DE (1) DE20150280T1 (en)
ES (2) ES2774714T3 (en)
IL (1) IL212825A0 (en)
PT (1) PT2351100T (en)
WO (1) WO2010056352A2 (en)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009137241A2 (en) 2008-04-14 2009-11-12 Bandgap Engineering, Inc. Process for fabricating nanowire arrays
US20120305076A1 (en) * 2008-05-19 2012-12-06 Tyler Sims Lens systems for solar energy solutions
US9299866B2 (en) * 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
CA2743743A1 (en) 2008-11-14 2010-05-20 Bandgap Engineering, Inc. Nanostructured devices
US11996550B2 (en) 2009-05-07 2024-05-28 Amprius Technologies, Inc. Template electrode structures for depositing active materials
US20100285358A1 (en) * 2009-05-07 2010-11-11 Amprius, Inc. Electrode Including Nanostructures for Rechargeable Cells
US20140370380A9 (en) * 2009-05-07 2014-12-18 Yi Cui Core-shell high capacity nanowires for battery electrodes
US8450012B2 (en) 2009-05-27 2013-05-28 Amprius, Inc. Interconnected hollow nanostructures containing high capacity active materials for use in rechargeable batteries
WO2011017173A2 (en) * 2009-07-28 2011-02-10 Bandgap Engineering Inc. Silicon nanowire arrays on an organic conductor
US8299655B2 (en) * 2010-01-04 2012-10-30 Scitech Associates Holdings, Inc. Method and apparatus for an optical frequency rectifier
US9172088B2 (en) 2010-05-24 2015-10-27 Amprius, Inc. Multidimensional electrochemically active structures for battery electrodes
CN105206794B (en) 2010-03-03 2018-02-23 安普瑞斯股份有限公司 Template electrode structure for position activity material
US9780365B2 (en) 2010-03-03 2017-10-03 Amprius, Inc. High-capacity electrodes with active material coatings on multilayered nanostructured templates
TW201200465A (en) * 2010-06-29 2012-01-01 Univ Nat Central Nano/micro-structure and fabrication method thereof
WO2012067943A1 (en) 2010-11-15 2012-05-24 Amprius, Inc. Electrolytes for rechargeable batteries
WO2012124807A1 (en) * 2011-03-16 2012-09-20 本田技研工業株式会社 Multi-junction solar cell and manufacturing method therefor
EP2727175A4 (en) 2011-07-01 2015-07-01 Amprius Inc MATRIX ELECTRODE STRUCTURES HAVING IMPROVED ADHESION CHARACTERISTICS
TW201302600A (en) * 2011-07-04 2013-01-16 Univ Nat Taiwan Science Tech 矽Nami line array manufacturing method
CN102694038B (en) * 2012-01-16 2014-12-24 上海理工大学 Amorphous silicon solar cell based on bifacial metal cladding waveguide structure and manufacturing process thereof
KR101438130B1 (en) * 2013-03-08 2014-09-16 (주)애니캐스팅 Concentrating Photovoltaic module
KR101374272B1 (en) * 2013-03-22 2014-03-13 연세대학교 산학협력단 Light-heat energy conversion module having nanostructured surface and method for fabricating the same
CN103681965A (en) * 2013-12-03 2014-03-26 常州大学 Preparation method of flexible substrate silicon nanowire heterojunction solar cell
EP3143657B1 (en) 2014-05-12 2019-07-10 Amprius, Inc. Structurally controlled deposition of silicon onto nanowires
CN104716209A (en) * 2015-03-20 2015-06-17 黄河水电光伏产业技术有限公司 Solar cell based on silicon substrate nanowire and preparing method thereof
KR102345543B1 (en) * 2015-08-03 2021-12-30 삼성전자주식회사 Pellicle and photomask assembly including the same
CN106918578B (en) * 2015-12-24 2020-06-09 财团法人工业技术研究院 sensor chip
AT519922B1 (en) * 2017-05-11 2020-01-15 Univ Wien Tech SERS substrate
CN107633997B (en) * 2017-08-10 2019-01-29 长江存储科技有限责任公司 A kind of wafer bonding method
US11585807B2 (en) 2019-02-20 2023-02-21 Advanced Silicon Group, Inc. Nanotextured silicon biosensors
WO2020172564A1 (en) 2019-02-22 2020-08-27 Amprius, Inc. Compositionally modified silicon coatings for use in a lithium ion battery anode

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3308269A1 (en) * 1983-03-09 1984-09-13 Licentia Patent-Verwaltungs-Gmbh SOLAR CELL
US4589191A (en) * 1983-10-20 1986-05-20 Unisearch Limited Manufacture of high efficiency solar cells
US5178685A (en) * 1991-06-11 1993-01-12 Mobil Solar Energy Corporation Method for forming solar cell contacts and interconnecting solar cells
US5221854A (en) * 1991-11-18 1993-06-22 United Solar Systems Corporation Protective layer for the back reflector of a photovoltaic device
DE19811878C2 (en) * 1998-03-18 2002-09-19 Siemens Solar Gmbh Process and etching solution for wet chemical pyramidal texture etching of silicon surfaces
JP3619053B2 (en) * 1999-05-21 2005-02-09 キヤノン株式会社 Method for manufacturing photoelectric conversion device
US6649824B1 (en) * 1999-09-22 2003-11-18 Canon Kabushiki Kaisha Photoelectric conversion device and method of production thereof
GB0114896D0 (en) * 2001-06-19 2001-08-08 Bp Solar Ltd Process for manufacturing a solar cell
JP2004235274A (en) * 2003-01-28 2004-08-19 Kyocera Corp Polycrystalline silicon substrate and roughening method thereof
JP4434658B2 (en) * 2003-08-08 2010-03-17 キヤノン株式会社 Structure and manufacturing method thereof
US20060284218A1 (en) * 2003-09-03 2006-12-21 The Regents Of The University Of California Nanoelectonic devices based on nanowire networks
US20060207647A1 (en) * 2005-03-16 2006-09-21 General Electric Company High efficiency inorganic nanorod-enhanced photovoltaic devices
CN1312034C (en) 2005-05-20 2007-04-25 清华大学 Process for preparing monocrystalline silicon nano line array with single axial arranging
US7589880B2 (en) * 2005-08-24 2009-09-15 The Trustees Of Boston College Apparatus and methods for manipulating light using nanoscale cometal structures
AU2007322360B2 (en) * 2006-02-27 2013-03-28 Los Alamos National Security, Llc Optoelectronic devices utilizing materials having enhanced electronic transitions
US20080006319A1 (en) * 2006-06-05 2008-01-10 Martin Bettge Photovoltaic and photosensing devices based on arrays of aligned nanostructures
US8866007B2 (en) * 2006-06-07 2014-10-21 California Institute Of Technology Plasmonic photovoltaics
EP1892769A2 (en) * 2006-08-25 2008-02-27 General Electric Company Single conformal junction nanowire photovoltaic devices
GB2442768A (en) * 2006-10-11 2008-04-16 Sharp Kk A method of encapsulating low dimensional structures
CN1958436A (en) * 2006-10-17 2007-05-09 浙江大学 Method for preparing Nano silicon line
US7977568B2 (en) 2007-01-11 2011-07-12 General Electric Company Multilayered film-nanowire composite, bifacial, and tandem solar cells
KR100809248B1 (en) 2007-03-14 2008-02-29 삼성전기주식회사 Photovoltaic device using semiconductor heterostructure nanowire and manufacturing method thereof
CA2743743A1 (en) 2008-11-14 2010-05-20 Bandgap Engineering, Inc. Nanostructured devices
TW201024526A (en) 2008-12-23 2010-07-01 Cheng-Chin Kung Cooling and circulating system for engine oil
CN110249598B (en) 2017-03-03 2023-03-24 苹果公司 Arrangement in a base station

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KUIQING PENG ET AL: "Aligned Single-Crystalline Si Nanowire Arrays for Photovoltaic Applications", SMALL, WILEY - VCH VERLAG GMBH & CO. KGAA, DE, vol. 1, no. 11, 1 January 2005 (2005-01-01), pages 1062 - 1067, XP008128722, ISSN: 1613-6810, [retrieved on 20050818], DOI: 10.1002/SMLL.200500137 *
PENG K ET AL: "FABRICATION OF SINGLE-CRYSTALLINE SILICON NANOWIRES BY SCRATCHING A SILICON SURFACE WITH CATALYTIC METAL PARTICLES", ADVANCED FUNCTIONAL MATERIALS, WILEY - V C H VERLAG GMBH & CO. KGAA, DE, vol. 16, no. 3, 3 February 2006 (2006-02-03), pages 387 - 394, XP001238614, ISSN: 1616-301X, DOI: 10.1002/ADFM.200500392 *

Also Published As

Publication number Publication date
IL212825A0 (en) 2011-07-31
PT2351100T (en) 2020-04-21
US20130247966A1 (en) 2013-09-26
AU2009314576B2 (en) 2015-05-14
US20100122725A1 (en) 2010-05-20
JP2012508979A (en) 2012-04-12
EP3664158A1 (en) 2020-06-10
US20220223750A1 (en) 2022-07-14
WO2010056352A3 (en) 2010-08-05
ES2810301T1 (en) 2021-03-08
CN102282679B (en) 2015-05-20
EP2351100B1 (en) 2020-01-08
US20180323321A1 (en) 2018-11-08
CA2743743A1 (en) 2010-05-20
AU2009314576A1 (en) 2010-05-20
JP5612591B2 (en) 2014-10-22
ES2774714T3 (en) 2020-07-22
US8450599B2 (en) 2013-05-28
KR20110098910A (en) 2011-09-02
DE20150280T1 (en) 2021-04-15
WO2010056352A2 (en) 2010-05-20
CN102282679A (en) 2011-12-14
EP2351100A2 (en) 2011-08-03

Similar Documents

Publication Publication Date Title
EP2351100A4 (en) NANOSTRUCTURED DEVICES
EP2297794A4 (en) NANOSTRUCTURED LED
DK2335370T3 (en) Organ-at-a-chip device
DK2235384T3 (en) connection device
DK2370462T3 (en) Glucagon-ANALOGS
DK2342317T3 (en) HANGING-DROP-PLATE
DE602009000234D1 (en) msignals
BRPI0907376A2 (en) Photobiorretador
DK3444343T3 (en) POLYPEPTIDER
BRPI0914649A2 (en) Piprazole-quinazolines
DE602008003972D1 (en) Sitzrücklehnungsmechanismus
DE602008003521D1 (en) Sitzrücklehnungsmechanismus
FIC20240018I1 (en) My vamoro
DK2342454T3 (en) Windkraftanlagen
DK2336132T3 (en) MORPHOLINPURINDERIVAT
DK2335031T3 (en) IN-LINE-GAUGE
DK2379557T3 (en) Aminopyrazole-RELATED
DK2271613T3 (en) Hydroxymethylcyclohexylamines
DE602008003970D1 (en) Strahlstromkalibriersystem
ES1067341Y (en) DRILL-FIXING DEVICE
EP2328240A4 (en) CONNECTION DEVICE
BRPI0907522A2 (en) biarlamides
DE112009000183A5 (en) Sicherheitsvorreiber
BRPI0909634A2 (en) 2-aminoquinolines
DE112009001946A5 (en) MOBELAUSZUGSFÜHRUNG

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20110512

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Ref document number: 602009060964

Country of ref document: DE

Free format text: PREVIOUS MAIN CLASS: H01L0031042000

Ipc: H01L0031023600

A4 Supplementary search report drawn up and despatched

Effective date: 20160411

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 31/0352 20060101ALI20160405BHEP

Ipc: H01L 31/0236 20060101AFI20160405BHEP

Ipc: H01L 31/068 20120101ALI20160405BHEP

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

INTG Intention to grant announced

Effective date: 20190624

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602009060964

Country of ref document: DE

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 1223768

Country of ref document: AT

Kind code of ref document: T

Effective date: 20200215

REG Reference to a national code

Ref country code: NL

Ref legal event code: FP

REG Reference to a national code

Ref country code: PT

Ref legal event code: SC4A

Ref document number: 2351100

Country of ref document: PT

Date of ref document: 20200421

Kind code of ref document: T

Free format text: AVAILABILITY OF NATIONAL TRANSLATION

Effective date: 20200407

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

REG Reference to a national code

Ref country code: ES

Ref legal event code: FG2A

Ref document number: 2774714

Country of ref document: ES

Kind code of ref document: T3

Effective date: 20200722

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200408

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200108

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200108

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200409

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200408

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200108

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200508

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200108

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200108

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602009060964

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200108

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200108

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200108

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200108

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200108

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200108

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 1223768

Country of ref document: AT

Kind code of ref document: T

Effective date: 20200108

26N No opposition filed

Effective date: 20201009

PLAA Information modified related to event that no opposition was filed

Free format text: ORIGINAL CODE: 0009299DELT

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

R26N No opposition filed (corrected)

Effective date: 20201009

RAP2 Party data changed (patent owner data changed or rights of a patent transferred)

Owner name: ADVANCED SILICON GROUP TECHNOLOGIES, LLC

PLAA Information modified related to event that no opposition was filed

Free format text: ORIGINAL CODE: 0009299DELT

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200108

PLAA Information modified related to event that no opposition was filed

Free format text: ORIGINAL CODE: 0009299DELT

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

R26N No opposition filed (corrected)

Effective date: 20201009

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200108

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200108

R26N No opposition filed (corrected)

Effective date: 20201009

RAP2 Party data changed (patent owner data changed or rights of a patent transferred)

Owner name: ADVANCED SILICON GROUP TECHNOLOGIES, LLC

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200108

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20201116

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20201116

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20201130

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20201130

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20201130

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20201116

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20201116

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200108

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200108

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200108

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20201130

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: TR

Payment date: 20221115

Year of fee payment: 14

Ref country code: PT

Payment date: 20221102

Year of fee payment: 14

P01 Opt-out of the competence of the unified patent court (upc) registered

Effective date: 20230516

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20240516

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20240516

REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Ref document number: 602009060964

Country of ref document: DE

Free format text: PREVIOUS MAIN CLASS: H01L0031023600

Ipc: H10F0077700000

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 20241126

Year of fee payment: 16

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20241127

Year of fee payment: 16

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20241126

Year of fee payment: 16

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: IT

Payment date: 20241122

Year of fee payment: 16

Ref country code: ES

Payment date: 20241202

Year of fee payment: 16