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EP2293309A1 - Integrated inductive device - Google Patents

Integrated inductive device Download PDF

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Publication number
EP2293309A1
EP2293309A1 EP10174810A EP10174810A EP2293309A1 EP 2293309 A1 EP2293309 A1 EP 2293309A1 EP 10174810 A EP10174810 A EP 10174810A EP 10174810 A EP10174810 A EP 10174810A EP 2293309 A1 EP2293309 A1 EP 2293309A1
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EP
European Patent Office
Prior art keywords
inductive device
integrated
axis
central
turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10174810A
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German (de)
French (fr)
Inventor
Frédéric Gianesello
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
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STMicroelectronics SA
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Filing date
Publication date
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Publication of EP2293309A1 publication Critical patent/EP2293309A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H01F27/346—Preventing or reducing leakage fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F2017/0073—Printed inductances with a special conductive pattern, e.g. flat spiral
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F2017/0086—Printed inductances on semiconductor substrate

Definitions

  • the invention relates to integrated circuits, including integrated inductive devices and in particular those made in voltage-controlled oscillators of wireless communication devices.
  • the inductive devices integrated in the electronic circuits are devices that comprise a plurality of coils, called "turns". But these turns induce electromagnetic fields in the neighboring areas of the inductive device and disrupt the operation of components that are in the near vicinity of the inductive device.
  • inductive devices must be integrated into circuits that are increasingly miniaturized.
  • inductive devices having a sufficiently high inductance and which generate the lowest possible electromagnetic fields in order to reduce the electromagnetic disturbances in the vicinity of the inductive device.
  • US patent application can be cited US 2005/0195063 , which discloses an integrated inductive device comprising two coplanar turns mutually coupled so as to form substantially an eight with a high loop and a low loop, said turns being substantially symmetrical with respect to a horizontal axis of the inductor.
  • this inductive device comprises asymmetry which causes non-homogeneity of the electromagnetic fields induced in the vicinity of the inductive device. This inductive device also does not sufficiently reduce the electromagnetic fields induced.
  • an integrated inductive device for reducing the levels of coupling with the environment, that is to say to reduce the electromagnetic fields induced in the vicinity of this inductive device, while maintaining a small surface area. for the integrated inductive device considered.
  • an integrated inductive device comprising a central turn disposed between two outer turns mutually coupled to the central turn, so as to form two substantially eight-shaped patterns having a common portion corresponding to said central turn.
  • This device makes it possible to reduce the levels of coupling with the environment, in particular thanks to the central coil which generates an induced electromagnetic field opposed to the electromagnetic fields induced by the two outer turns.
  • Such a device also makes it possible to obtain a sufficiently small external diameter, this external diameter being for example between 150 and 400 micrometers.
  • the central coil is integrally inserted between the outer turns.
  • This arrangement of the turns makes it possible to improve the homogeneity of the induced electromagnetic field generated in the neighboring zones of the inductive device. Thus, it prevents the creation of a large induced electromagnetic field in a preferred area adjacent to the inductive device.
  • the device may also include an axis of symmetry located in the plane of the device.
  • an inductive device which is substantially perfectly symmetrical (with manufacturing tolerances) with respect to an axis of the device, which improves the homogeneity of the electromagnetic field induced at the periphery of this device. Furthermore, an inductive device that has a substantially perfect symmetry facilitates its manufacture and promote its integration into an electronic circuit.
  • the device comprises an additional axis located in the plane of the device and perpendicular to said axis of symmetry of the device, each outer turn being substantially symmetrical with respect to the additional axis.
  • the central turn is open and symmetrical with respect to said axis of symmetry and the device comprises two feed means connected to the central turn in the vicinity of its opening.
  • An opening made at the central turn allows free access to the midpoint of the inductive device.
  • the central turn can be vis-à-vis all the outer turns.
  • the three turns of the inductor have substantially the same external diameter, which promotes on the one hand, the homogeneity of the electromagnetic field induced, and on the other hand, improves the reduction of coupling levels.
  • an integrated circuit comprising an integrated inductive device as defined above.
  • a voltage controlled oscillator comprising an integrated circuit provided with an integrated inductive device as defined above.
  • a wireless communication apparatus comprising a voltage controlled oscillator as defined above.
  • an inductive device integrated in a voltage-controlled oscillator in order to reduce the electromagnetic fields induced coming, for example, from a power amplifier located in the vicinity of the voltage-controlled oscillator and which are capable of to disturb the operation of the voltage controlled oscillator.
  • Such integrated inductive device makes it possible to improve the output signal delivered by the voltage-controlled oscillator when the latter is placed in an environment with strong electromagnetic disturbances.
  • FIG. 1 schematically an embodiment of an integrated inductive device 1 intended to be integrated in an integrated circuit.
  • the integrated inductive device comprises a central turn 2 and two outer turns 3, 4.
  • the inductive device 1 also comprises an axis of symmetry A and an additional axis B which is perpendicular to said axis of symmetry A.
  • the central turn 2 comprises an opening C, located in the axis of the axis of symmetry A of the inductive device 1, in order to power the latter.
  • the inductive device 1 further comprises two supply means 5, 6 connected to the central turn 2 and in the vicinity of its opening C.
  • the central turn 2, as well as the outer turns 3, 4 are coplanar, according to a plane P of FIG. integrated inductive device 1.
  • the axis of symmetry A and the additional axis B are also coplanar with said turns 2 to 4.
  • the integrated inductive device 1 comprises at least two metallization levels (a higher level and a lower level) separated by a dielectric. We have shown on the figure 1 the upper level of metallization of the inductive device 1 in solid lines and the lower level in dashed lines.
  • the two outer turns 3, 4 are mutually coupled to the central turn 2 so as to form two substantially eight-shaped patterns, having a common portion corresponding to said central turn 2.
  • the first outer turn 3 is mutually coupled to the central turn 2 by a first link 7.
  • the second outer turn 4 is also mutually coupled to the central turn 2 via a second link 8.
  • the first link 7 has a part 7a on the upper metallization level and a part 7b on the metallization level lower part 7b being connected to the upper metallization level by vias (not shown here for simplification purposes).
  • the second link 8 has a portion 8a on the upper metallization level and a portion 8b on the lower metallization level, the 8b portion being connected to the upper metallization level by vias (not shown here for simplification purposes).
  • the supply current travels the outer turns 3, 4 in the opposite direction of clockwise.
  • the current thus generates in the first outer turn 3 a first electromagnetic field induced along a first direction axis E which is perpendicular to the plane P of the inductive device 1 and oriented in a first direction.
  • the current also generates in the second outer turn 4 a second electromagnetic field induced along a second direction axis F which is also perpendicular to the plane P of the inductive device 1 and oriented in the same direction as the first direction axis.
  • the supply current travels through the central turn 2 in the direction of clockwise, and thus generates a third induced electromagnetic field along a third axis of direction G which is perpendicular to the plane P of the inductive device 1 and oriented in a second direction. direction opposite to the first direction of the axes of direction E, F of the external turns 3, 4.
  • This third electromagnetic field induced makes it possible to compensate for the first two electromagnetic fields, thus making it possible to reduce the coupling levels between the inductive device 1 and the components of the integrated circuit located in the vicinity of this latest.
  • the third axis of direction G is situated substantially at the midpoint of the inductive device 1 and that this midpoint is accessible from the opening C of the central turn 2.
  • outer turns 3.4 each comprise a midpoint and that the two axes of direction E, F respectively pass through said midpoints of the outer turns 3.4.
  • the central turn 2 is integrally inserted between the outer turns 3, 4 so that the middle points of the outer turns 3.4 are aligned with the midpoint of the inductive device. That is to say that the three midpoints are aligned along the additional axis B, which promotes the homogeneity of the global electromagnetic field induced by the inductive device 1.
  • central turn 2 is vis-à-vis all the outer turns so that the three turns 2, 3, 4 have substantially the same diameter.
  • the first curve S1 is obtained from an integrated inductive device comprising a single turn.
  • the second curve S2 is obtained from an integrated inductive device comprising two turns as described in the US patent application. US 2005/0195063 .
  • the third curve S3 is obtained from an integrated inductive device 1 comprising three turns as described in FIG. figure 1 .
  • the abscissa axis corresponds to the inductance L of an integrated inductive device expressed in nano henry.
  • the ordinate axis corresponds to the diameter De of the integrated inductive device expressed in micrometers.
  • FIG. 3 On the figure 3 three systems Sy1, Sy2, Sy3 are shown schematically, each comprising a first reference inductive device LS1 and a second different inductive device for each system Sy1, Sy2, Sy3, in order to measure the coupling level between each second inductive device. and the reference inductive device LS1 in order to be able to compare the coupling level generated by each of the different inductive devices.
  • the inductive reference device LS1 comprises a single turn.
  • the first system Sy1 comprises the first reference inductive device LS1 located at a distance of 200 micrometers from a second inductive device LS1 identical to the first.
  • the second system Sy2 comprises the inductive reference device LS1 situated at a distance of 200 micrometers from a second inductive device LS2 comprising two turns as described in the US patent application. US 2005/0195063 .
  • the third system Sy3 comprises the reference inductive device LS1 situated at a distance of 200 micrometers from a second inductive device LS3 comprising three turns as described in FIG. figure 1 .
  • Coupling levels are expressed in decibels as a function of the frequency (in gigahertz) of the current flowing through the inductive devices.
  • the decibel unit (denoted by dB) is a logarithmic unit for measuring the ratio between two powers. This unit is dimensionless and defines a scale of intensity known to those skilled in the art.
  • the comparison of the three curves makes it possible to highlight the reduction of the coupling level of the inductive device LS3, as described in FIG. figure 1 , compared to the state of the art represented by the two inductive devices LS1 and LS2.
  • the inductive device LS3 makes it possible to improve the coupling by about 15 dB compared with the inductive device LS2 as described in the US patent application. US 2005/0195063 .
  • a wireless communication apparatus 10 is shown schematically.
  • This wireless communication apparatus 10 includes an antenna 11 for transmitting and receiving communication signals with a remote base station.
  • This apparatus comprises a transmission chain comprising, in a conventional manner, an ETN digital processing stage, an ETA analog processing stage and the antenna 11.
  • the digital processing stage ETN generates a baseband signal for the analog processing stage ETA.
  • the ETA analog processing stage comprises in particular a MIX mixer, a PPA power preamplifier, a PA power amplifier and a PLL phase-locked loop comprising a VCO voltage-controlled oscillator.
  • the voltage controlled oscillator VCO comprises an integrated circuit CI which comprises at least one integrated inductive device 1 as described in FIG. figure 1 .
  • the output of the VCO voltage controlled oscillator provides a transposition signal for the MIX mixer.
  • the mixer MIX also receives the signal, for example in baseband, from the digital processing stage ETN and frequency transposes the baseband signal into a radiofrequency signal to be transmitted for the remote base station.
  • This radiofrequency signal is amplified by an amplification system comprising the power preamplifier PPA and the power amplifier PA, and is then transmitted thanks to the antenna 11 of the apparatus 10.
  • the coupling levels between the voltage-controlled oscillator VCO are reduced and, in particular, the power amplifier PA, thus promoting the reduction of spurious signals from the power amplifier PA and improving the output signal of the voltage-controlled oscillator VCO.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Near-Field Transmission Systems (AREA)

Abstract

The device (1) has a central loop (2) formed between outer loops (3, 4). The outer loops are coupled to the central loop so as to form two patterns in 8 shape. A common portion of the patterns corresponds to the central loop. The central loop is inserted between the outer loops. An additional axis (B) is perpendicular to symmetry axis (A). Two power supply units (5, 6) are connected to the central loop. One of the outer loops is mutually coupled to the central loop by a link (7).

Description

L'invention concerne les circuits intégrés, notamment les dispositifs inductifs intégrés et en particulier ceux réalisés dans les oscillateurs commandés en tension des appareils de communication sans fil.The invention relates to integrated circuits, including integrated inductive devices and in particular those made in voltage-controlled oscillators of wireless communication devices.

Actuellement, les dispositifs inductifs intégrés au sein des circuits électroniques sont des dispositifs qui comprennent une pluralité de bobines, dites « spires ». Mais ces spires induisent des champs électromagnétiques dans les zones voisines du dispositif inductif et perturbent le fonctionnement des composants qui se situent dans le voisinage proche du dispositif inductif.Currently, the inductive devices integrated in the electronic circuits are devices that comprise a plurality of coils, called "turns". But these turns induce electromagnetic fields in the neighboring areas of the inductive device and disrupt the operation of components that are in the near vicinity of the inductive device.

En outre, les dispositifs inductifs doivent être intégrés dans des circuits qui sont de plus en plus miniaturisés.In addition, inductive devices must be integrated into circuits that are increasingly miniaturized.

Il est donc avantageux de concevoir des dispositifs inductifs qui ont une surface suffisamment faible pour être facilement intégrés dans lesdits circuits électroniques.It is therefore advantageous to design inductive devices that have a sufficiently small surface to be easily integrated into said electronic circuits.

Par ailleurs, il est intéressant de fournir des dispositifs inductifs ayant une inductance suffisamment élevée et qui génèrent des champs électromagnétiques les plus faibles possibles afin de réduire les perturbations électromagnétiques au voisinage du dispositif inductif.Moreover, it is advantageous to provide inductive devices having a sufficiently high inductance and which generate the lowest possible electromagnetic fields in order to reduce the electromagnetic disturbances in the vicinity of the inductive device.

On peut par exemple citer la demande de brevet américain US 2005/0195063 , qui décrit un dispositif inductif intégré comprenant deux spires coplanaires couplées mutuellement de manière à former sensiblement un huit avec une boucle haute et une boucle basse, lesdites spires étant sensiblement symétriques par rapport à un axe horizontal de l'inductance. Mais ce dispositif inductif comporte dissymétrie qui entraîne une non-homogénéité des champs électromagnétiques induits au voisinage du dispositif inductif. Ce dispositif inductif ne permet pas non plus de réduire de manière suffisante les champs électromagnétiques induits.For example, the US patent application can be cited US 2005/0195063 , which discloses an integrated inductive device comprising two coplanar turns mutually coupled so as to form substantially an eight with a high loop and a low loop, said turns being substantially symmetrical with respect to a horizontal axis of the inductor. But this inductive device comprises asymmetry which causes non-homogeneity of the electromagnetic fields induced in the vicinity of the inductive device. This inductive device also does not sufficiently reduce the electromagnetic fields induced.

Il est donc proposé selon un mode de réalisation un dispositif inductif intégré permettant de réduire les niveaux de couplage avec l'environnement, c'est-à-dire réduire les champs électromagnétiques induits au voisinage de ce dispositif inductif, tout en conservant une surface faible pour le dispositif inductif intégré considéré.It is therefore proposed according to one embodiment an integrated inductive device for reducing the levels of coupling with the environment, that is to say to reduce the electromagnetic fields induced in the vicinity of this inductive device, while maintaining a small surface area. for the integrated inductive device considered.

Selon un aspect, il est proposé un dispositif inductif intégré comprenant une spire centrale disposée entre deux spires externes couplées mutuellement à la spire centrale, de manière à former deux motifs sensiblement en forme de huit ayant une partie commune correspondant à ladite spire centrale.According to one aspect, there is provided an integrated inductive device comprising a central turn disposed between two outer turns mutually coupled to the central turn, so as to form two substantially eight-shaped patterns having a common portion corresponding to said central turn.

Ce dispositif permet de réduire les niveaux de couplage avec l'environnement, notamment grâce à la spire centrale qui génère un champ électromagnétique induit opposé aux champs électromagnétiques induits par les deux spires externes. Un tel dispositif permet également d'obtenir un diamètre externe suffisamment faible, ce diamètre externe étant par exemple compris entre 150 et 400 micromètres.This device makes it possible to reduce the levels of coupling with the environment, in particular thanks to the central coil which generates an induced electromagnetic field opposed to the electromagnetic fields induced by the two outer turns. Such a device also makes it possible to obtain a sufficiently small external diameter, this external diameter being for example between 150 and 400 micrometers.

Avantageusement, la spire centrale est intégralement insérée entre les spires externes.Advantageously, the central coil is integrally inserted between the outer turns.

Cette disposition des spires permet d'améliorer l'homogénéité du champ électromagnétique induit généré dans les zones voisines du dispositif inductif. Ainsi, on empêche la création d'un champ électromagnétique induit important dans une zone privilégiée voisine du dispositif inductif.This arrangement of the turns makes it possible to improve the homogeneity of the induced electromagnetic field generated in the neighboring zones of the inductive device. Thus, it prevents the creation of a large induced electromagnetic field in a preferred area adjacent to the inductive device.

Le dispositif peut également comprendre un axe de symétrie situé dans le plan du dispositif.The device may also include an axis of symmetry located in the plane of the device.

Ceci permet de fournir un dispositif inductif sensiblement parfaitement symétrique (aux tolérances de fabrication près) par rapport à un axe du dispositif, ce qui améliore l'homogénéité du champ électromagnétique induit en périphérie de ce dispositif. Par ailleurs, un dispositif inductif qui présente une symétrie sensiblement parfaite permet de faciliter sa fabrication et favoriser son intégration au sein d'un circuit électronique.This makes it possible to provide an inductive device which is substantially perfectly symmetrical (with manufacturing tolerances) with respect to an axis of the device, which improves the homogeneity of the electromagnetic field induced at the periphery of this device. Furthermore, an inductive device that has a substantially perfect symmetry facilitates its manufacture and promote its integration into an electronic circuit.

Selon un mode de réalisation, le dispositif comprend un axe supplémentaire situé dans le plan du dispositif et perpendiculaire audit axe de symétrie du dispositif, chaque spire externe étant sensiblement symétrique par rapport à l'axe supplémentaire.According to one embodiment, the device comprises an additional axis located in the plane of the device and perpendicular to said axis of symmetry of the device, each outer turn being substantially symmetrical with respect to the additional axis.

Selon encore un autre mode de réalisation, la spire centrale est ouverte et symétrique par rapport audit axe de symétrie et le dispositif comprend deux moyens d'alimentation connectés à la spire centrale au voisinage de son ouverture.According to yet another embodiment, the central turn is open and symmetrical with respect to said axis of symmetry and the device comprises two feed means connected to the central turn in the vicinity of its opening.

Une ouverture pratiquée au niveau de la spire centrale permet de libérer l'accès au point milieu du dispositif inductif.An opening made at the central turn allows free access to the midpoint of the inductive device.

En outre, la spire centrale peut être en vis-à-vis de la totalité des spires externes.In addition, the central turn can be vis-à-vis all the outer turns.

Ainsi, les trois spires de l'inductance possèdent sensiblement un même diamètre externe, ce qui favorise d'une part, l'homogénéité du champ électromagnétique induit, et d'autre part, améliore la réduction des niveaux de couplage.Thus, the three turns of the inductor have substantially the same external diameter, which promotes on the one hand, the homogeneity of the electromagnetic field induced, and on the other hand, improves the reduction of coupling levels.

Selon un autre aspect, il est proposé un circuit intégré comprenant un dispositif inductif intégré tel que défini précédemment.In another aspect, there is provided an integrated circuit comprising an integrated inductive device as defined above.

Selon encore un autre aspect, il est proposé un oscillateur commandé en tension comprenant un circuit intégré muni d'un dispositif inductif intégré tel que défini précédemment.According to yet another aspect, there is provided a voltage controlled oscillator comprising an integrated circuit provided with an integrated inductive device as defined above.

Selon encore un autre aspect, il est proposé un appareil de communication sans fil comprenant un oscillateur commandé en tension tel que défini ci-dessus.In yet another aspect, there is provided a wireless communication apparatus comprising a voltage controlled oscillator as defined above.

On peut ainsi, notamment, fournir un dispositif inductif intégré dans un oscillateur commandé en tension afin de réduire les champs électromagnétiques induits provenant, par exemple, d'un amplificateur de puissance situé dans le voisinage de l'oscillateur commandé en tension et qui sont susceptibles de perturber le fonctionnement de l'oscillateur commandé en tension. Un tel dispositif inductif intégré permet d'améliorer le signal de sortie délivré par l'oscillateur commandé en tension lorsque ce dernier est placé dans un environnement à fortes perturbations électromagnétiques.It is thus possible, in particular, to provide an inductive device integrated in a voltage-controlled oscillator in order to reduce the electromagnetic fields induced coming, for example, from a power amplifier located in the vicinity of the voltage-controlled oscillator and which are capable of to disturb the operation of the voltage controlled oscillator. Such integrated inductive device makes it possible to improve the output signal delivered by the voltage-controlled oscillator when the latter is placed in an environment with strong electromagnetic disturbances.

D'autres avantages et caractéristiques apparaîtront à l'examen de la description détaillée de modes de réalisation de l'invention, nullement limitatifs, et des dessins annexés sur lesquels :

  • la figure 1 illustre de façon schématique un mode de réalisation d'un dispositif inductif intégré ;
  • la figure 2 illustre de façon schématique des courbes d'inductance de différents dispositifs inductifs intégrés ;
  • les figure 3 et 4 illustrent de façon schématique les niveaux de couplage de trois dispositifs inductifs intégrés ; et
  • la figure 5 illustre de façon schématique un appareil de communication sans fil.
Other advantages and characteristics will appear on examining the detailed description of embodiments of the invention, in no way limiting, and the appended drawings in which:
  • the figure 1 schematically illustrates an embodiment of an integrated inductive device;
  • the figure 2 schematically illustrates inductance curves of different integrated inductive devices;
  • the figure 3 and 4 schematically illustrate the coupling levels of three integrated inductive devices; and
  • the figure 5 schematically illustrates a wireless communication apparatus.

Sur la figure 1, on a représenté de façon schématique un mode de réalisation d'un dispositif inductif intégré 1 destiné à être intégré dans un circuit intégré.On the figure 1 schematically an embodiment of an integrated inductive device 1 intended to be integrated in an integrated circuit.

Le dispositif inductif intégré comprend une spire centrale 2 et deux spires externes 3, 4. Le dispositif inductif 1 comprend également un axe de symétrie A et un axe supplémentaire B qui est perpendiculaire audit axe de symétrie A.The integrated inductive device comprises a central turn 2 and two outer turns 3, 4. The inductive device 1 also comprises an axis of symmetry A and an additional axis B which is perpendicular to said axis of symmetry A.

La spire centrale 2 comprend une ouverture C, située dans l'axe de l'axe de symétrie A du dispositif inductif 1, afin de pouvoir alimenter ce dernier. Le dispositif inductif 1 comprend en outre deux moyens d'alimentation 5, 6 connectés à la spire centrale 2 et au voisinage de son ouverture C. La spire centrale 2, ainsi que les spires externes 3, 4 sont coplanaires, selon un plan P du dispositif inductif intégré 1.The central turn 2 comprises an opening C, located in the axis of the axis of symmetry A of the inductive device 1, in order to power the latter. The inductive device 1 further comprises two supply means 5, 6 connected to the central turn 2 and in the vicinity of its opening C. The central turn 2, as well as the outer turns 3, 4 are coplanar, according to a plane P of FIG. integrated inductive device 1.

L'axe de symétrie A et l'axe supplémentaire B sont également coplanaires auxdites spires 2 à 4.The axis of symmetry A and the additional axis B are also coplanar with said turns 2 to 4.

Le dispositif inductif intégré 1 comprend au moins deux niveaux de métallisation (un niveau supérieur et un niveau inférieur) séparés par un diélectrique. On a représenté sur la figure 1 le niveau de métallisation supérieur du dispositif inductif 1 en traits pleins et le niveau inférieur en pointillés.The integrated inductive device 1 comprises at least two metallization levels (a higher level and a lower level) separated by a dielectric. We have shown on the figure 1 the upper level of metallization of the inductive device 1 in solid lines and the lower level in dashed lines.

Les deux spires externes 3, 4 sont couplées mutuellement à la spire centrale 2 de manière à former deux motifs sensiblement en forme de huit, ayant une partie commune correspondant à ladite spire centrale 2. La première spire externe 3 est couplée mutuellement à la spire centrale 2 par une première liaison 7. La deuxième spire externe 4 est également couplée mutuellement à la spire centrale 2 via une deuxième liaison 8. La première liaison 7 comporte une partie 7a sur le niveau de métallisation supérieur et une partie 7b sur le niveau de métallisation inférieur, la partie 7b étant reliée au niveau de métallisation supérieur par des vias (non représentés ici à des fins de simplification). La deuxième liaison 8 comporte une partie 8a sur le niveau de métallisation supérieur et une partie 8b sur le niveau de métallisation inférieur, la partie 8b étant reliée au niveau de métallisation supérieur par des vias (non représentés ici à des fins de simplification).The two outer turns 3, 4 are mutually coupled to the central turn 2 so as to form two substantially eight-shaped patterns, having a common portion corresponding to said central turn 2. The first outer turn 3 is mutually coupled to the central turn 2 by a first link 7. The second outer turn 4 is also mutually coupled to the central turn 2 via a second link 8. The first link 7 has a part 7a on the upper metallization level and a part 7b on the metallization level lower part 7b being connected to the upper metallization level by vias (not shown here for simplification purposes). The second link 8 has a portion 8a on the upper metallization level and a portion 8b on the lower metallization level, the 8b portion being connected to the upper metallization level by vias (not shown here for simplification purposes).

On a également représenté sur la figure 1 le sens du parcours D du courant traversant le dispositif inductif 1. Le courant d'alimentation du dispositif inductif 1 entre par le premier moyen d'alimentation 5 et sort par le deuxième moyen d'alimentation 6.We also represented on the figure 1 the direction of the path D of the current passing through the inductive device 1. The supply current of the inductive device 1 enters through the first supply means 5 and leaves by the second supply means 6.

En outre, le courant d'alimentation parcourt les spires externes 3, 4 dans le sens inverse des aiguilles d'une montre. Le courant génère ainsi dans la première spire externe 3 un premier champ électromagnétique induit selon un premier axe de direction E qui est perpendiculaire au plan P du dispositif inductif 1 et orienté dans une première direction. De manière similaire, le courant génère également dans la deuxième spire externe 4 un deuxième champ électromagnétique induit selon un deuxième axe de direction F qui est également perpendiculaire au plan P du dispositif inductif 1 et orienté dans la même première direction que le premier axe de direction E.In addition, the supply current travels the outer turns 3, 4 in the opposite direction of clockwise. The current thus generates in the first outer turn 3 a first electromagnetic field induced along a first direction axis E which is perpendicular to the plane P of the inductive device 1 and oriented in a first direction. Similarly, the current also generates in the second outer turn 4 a second electromagnetic field induced along a second direction axis F which is also perpendicular to the plane P of the inductive device 1 and oriented in the same direction as the first direction axis. E.

Le courant d'alimentation parcourt la spire centrale 2 dans le sens des aiguilles d'une montre, et génère ainsi un troisième champ électromagnétique induit selon un troisième axe de direction G qui est perpendiculaire au plan P du dispositif inductif 1 et orienté dans une deuxième direction opposée à la première direction des axes de direction E, F des spires externes 3, 4. Ce troisième champ électromagnétique induit permet de compenser les deux premiers champs électromagnétiques, permettant ainsi de réduire les niveaux de couplage entre le dispositif inductif 1 et les composants du circuit intégré situés dans le voisinage de ce dernier.The supply current travels through the central turn 2 in the direction of clockwise, and thus generates a third induced electromagnetic field along a third axis of direction G which is perpendicular to the plane P of the inductive device 1 and oriented in a second direction. direction opposite to the first direction of the axes of direction E, F of the external turns 3, 4. This third electromagnetic field induced makes it possible to compensate for the first two electromagnetic fields, thus making it possible to reduce the coupling levels between the inductive device 1 and the components of the integrated circuit located in the vicinity of this latest.

On notera que le troisième axe de direction G est situé sensiblement au point milieu du dispositif inductif 1 et que ce point milieu est accessible à partir de l'ouverture C de la spire centrale 2.It will be noted that the third axis of direction G is situated substantially at the midpoint of the inductive device 1 and that this midpoint is accessible from the opening C of the central turn 2.

On notera également que les spires externes 3,4 comportent chacune un point milieu et que les deux axes de direction E, F passent respectivement par lesdits points milieu des spires externes 3,4.It will also be noted that the outer turns 3.4 each comprise a midpoint and that the two axes of direction E, F respectively pass through said midpoints of the outer turns 3.4.

Par ailleurs, la spire centrale 2 est intégralement insérée entre les spires externes 3, 4 de manière que les points milieu des spires externes 3,4 sont alignés avec le point milieu du dispositif inductif. C'est-à-dire que les trois points milieux sont alignés selon l'axe supplémentaire B, ce qui favorise l'homogénéité du champ électromagnétique global induit par le dispositif inductif 1.Furthermore, the central turn 2 is integrally inserted between the outer turns 3, 4 so that the middle points of the outer turns 3.4 are aligned with the midpoint of the inductive device. That is to say that the three midpoints are aligned along the additional axis B, which promotes the homogeneity of the global electromagnetic field induced by the inductive device 1.

En outre, la spire centrale 2 est en vis-à-vis de la totalité des spires externes de manière que les trois spires 2, 3, 4 ont sensiblement le même diamètre.In addition, the central turn 2 is vis-à-vis all the outer turns so that the three turns 2, 3, 4 have substantially the same diameter.

Sur la figure 2, on a représenté, à titre de comparaison, trois courbes d'inductance S1, S2, S3 en fonction du diamètre externe De du dispositif inductif intégré 1.On the figure 2 for comparison, three inductance curves S1, S2, S3 are represented as a function of the external diameter De of the integrated inductive device 1.

La première courbe S1 est obtenue à partir d'un dispositif inductif intégré comportant une seule spire. La deuxième courbe S2 est obtenue à partir d'un dispositif inductif intégré comportant deux spires tel que décrit dans la demande de brevet américain US 2005/0195063 . La troisième courbe S3 est obtenue à partir d'un dispositif inductif intégré 1 comportant trois spires tel que décrit à la figure 1.The first curve S1 is obtained from an integrated inductive device comprising a single turn. The second curve S2 is obtained from an integrated inductive device comprising two turns as described in the US patent application. US 2005/0195063 . The third curve S3 is obtained from an integrated inductive device 1 comprising three turns as described in FIG. figure 1 .

L'axe des abscisses correspond à l'inductance L d'un dispositif inductif intégré exprimée en nano henry. L'axe des ordonnées correspond au diamètre De du dispositif inductif intégré exprimé en micromètres.The abscissa axis corresponds to the inductance L of an integrated inductive device expressed in nano henry. The ordinate axis corresponds to the diameter De of the integrated inductive device expressed in micrometers.

La comparaison des trois courbes permet de mettre en évidence l'augmentation de l'inductance L, pour un même diamètre De, du dispositif inductif intégré 1 tel que décrit à la figure 1, par rapport à l'état de la technique représenté par les deux premières courbes S1, S2.The comparison of the three curves makes it possible to highlight the increase of the inductance L, for the same diameter De , of the integrated inductive device 1 as described in FIG. figure 1 , compared to the state of the art represented by the first two curves S1, S2.

Sur la figure 3, on a représenté de façon schématique trois systèmes Sy1, Sy2, Sy3 comprenant chacun un premier dispositif inductif de référence LS1 et un deuxième dispositif inductif différent pour chaque système Sy1, Sy2, Sy3, afin de mesurer le niveau de couplage entre chaque deuxième dispositif inductif et le dispositif inductif de référence LS1 en vue de pouvoir comparer le niveau de couplage généré par chacun des différents dispositifs inductifs.On the figure 3 three systems Sy1, Sy2, Sy3 are shown schematically, each comprising a first reference inductive device LS1 and a second different inductive device for each system Sy1, Sy2, Sy3, in order to measure the coupling level between each second inductive device. and the reference inductive device LS1 in order to be able to compare the coupling level generated by each of the different inductive devices.

Le dispositif inductif de référence LS1 comporte une spire unique.The inductive reference device LS1 comprises a single turn.

Le premier système Sy1 comprend le premier dispositif inductif de référence LS1 situé à une distance de 200 micromètres d'un deuxième dispositif inductif LS1 identique au premier.The first system Sy1 comprises the first reference inductive device LS1 located at a distance of 200 micrometers from a second inductive device LS1 identical to the first.

Le deuxième système Sy2 comprend le dispositif inductif de référence LS1 situé à une distance de 200 micromètres d'un deuxième dispositif inductif LS2 comportant deux spires tel que décrit dans la demande de brevet américain US 2005/0195063 .The second system Sy2 comprises the inductive reference device LS1 situated at a distance of 200 micrometers from a second inductive device LS2 comprising two turns as described in the US patent application. US 2005/0195063 .

Le troisième système Sy3 comprend le dispositif inductif de référence LS1 situé à une distance de 200 micromètres d'un deuxième dispositif inductif LS3 comportant trois spires tel que décrit à la figure 1.The third system Sy3 comprises the reference inductive device LS1 situated at a distance of 200 micrometers from a second inductive device LS3 comprising three turns as described in FIG. figure 1 .

Sur la figure 4, on a représenté, à titre de comparaison, trois courbes de mesure du niveau de couplage T1, T2, T3 respectivement des trois systèmes Sy1, Sy2, Sy3 décrits à la figure 3 précédente.On the figure 4 for comparison, three curves for measuring the coupling level T1, T2, T3 of the three systems Sy1, Sy2, Sy3 described in FIG. figure 3 previous.

Les niveaux de couplage sont exprimés en décibels en fonction de la fréquence (en gigahertz) du courant qui parcourt les dispositifs inductifs. On notera que l'unité décibel (notée dB) est une unité logarithmique de mesure du rapport entre deux puissances. Cette unité est sans dimension et définit une échelle d'intensité connue de l'homme du métier.Coupling levels are expressed in decibels as a function of the frequency (in gigahertz) of the current flowing through the inductive devices. Note that the decibel unit (denoted by dB) is a logarithmic unit for measuring the ratio between two powers. This unit is dimensionless and defines a scale of intensity known to those skilled in the art.

La comparaison des trois courbes permet de mettre en évidence la réduction du niveau de couplage du dispositif inductif LS3, tel que décrit à la figure 1, par rapport à l'état de la technique représenté par les deux dispositifs inductifs LS1 et LS2. Ainsi, on peut noter que le dispositif inductif LS3 permet d'améliorer le couplage d'environ 15 dB par rapport au dispositif inductif LS2 tel que décrit dans la demande de brevet américain US 2005/0195063 .The comparison of the three curves makes it possible to highlight the reduction of the coupling level of the inductive device LS3, as described in FIG. figure 1 , compared to the state of the art represented by the two inductive devices LS1 and LS2. Thus, it may be noted that the inductive device LS3 makes it possible to improve the coupling by about 15 dB compared with the inductive device LS2 as described in the US patent application. US 2005/0195063 .

Sur la figure 5, on a représenté de façon schématique un appareil de communication sans fil 10.On the figure 5 a wireless communication apparatus 10 is shown schematically.

Cet appareil de communication sans fil 10 comprend une antenne 11 pour émettre et recevoir des signaux de communication avec une station de base distante.This wireless communication apparatus 10 includes an antenna 11 for transmitting and receiving communication signals with a remote base station.

Cet appareil comporte une chaîne de transmission comprenant, de façon classique, un étage de traitement numérique ETN, un étage de traitement analogique ETA et l'antenne 11.This apparatus comprises a transmission chain comprising, in a conventional manner, an ETN digital processing stage, an ETA analog processing stage and the antenna 11.

L'étage de traitement numérique ETN génère un signal en bande de base destiné à l'étage de traitement analogique ETA.The digital processing stage ETN generates a baseband signal for the analog processing stage ETA.

L'étage de traitement analogique ETA comprend notamment un mélangeur MIX, un préamplificateur de puissance PPA, un amplificateur de puissance PA et une boucle à verrouillage de phase PLL comportant un oscillateur commandé en tension VCO. L'oscillateur commandé en tension VCO comprend un circuit intégré CI qui comporte au moins un dispositif inductif intégré 1 tel que décrit à la figure 1. La sortie de l'oscillateur commandé en tension VCO fournit un signal de transposition pour le mélangeur MIX.The ETA analog processing stage comprises in particular a MIX mixer, a PPA power preamplifier, a PA power amplifier and a PLL phase-locked loop comprising a VCO voltage-controlled oscillator. The voltage controlled oscillator VCO comprises an integrated circuit CI which comprises at least one integrated inductive device 1 as described in FIG. figure 1 . The output of the VCO voltage controlled oscillator provides a transposition signal for the MIX mixer.

Le mélangeur MIX reçoit également le signal, par exemple en bande de base, depuis l'étage de traitement numérique ETN et transpose en fréquence le signal en bande de base en un signal radiofréquence destiné à être émis pour la station de base distante. Ce signal radiofréquence est amplifié par une chaîne d'amplification comprenant le préamplificateur de puissance PPA et l'amplificateur de puissance PA, puis est émis grâce à l'antenne 11 de l'appareil 10.The mixer MIX also receives the signal, for example in baseband, from the digital processing stage ETN and frequency transposes the baseband signal into a radiofrequency signal to be transmitted for the remote base station. This radiofrequency signal is amplified by an amplification system comprising the power preamplifier PPA and the power amplifier PA, and is then transmitted thanks to the antenna 11 of the apparatus 10.

Ainsi, grâce à un tel dispositif inductif intégré 1, on réduit les niveaux de couplage entre l'oscillateur commandé en tension VCO et, en particulier, l'amplificateur de puissance PA, favorisant ainsi la réduction des signaux parasites provenant de l'amplificateur de puissance PA et améliorant le signal de sortie de l'oscillateur commandé en tension VCO.Thus, thanks to such an integrated inductive device 1, the coupling levels between the voltage-controlled oscillator VCO are reduced and, in particular, the power amplifier PA, thus promoting the reduction of spurious signals from the power amplifier PA and improving the output signal of the voltage-controlled oscillator VCO.

Claims (9)

Dispositif inductif intégré, caractérisé en ce qu'il comprend une spire centrale (2) disposée entre deux spires externes (3,4) couplées mutuellement à la spire centrale (2) de manière à former deux motifs sensiblement en forme de huit ayant une partie commune correspondant à ladite spire centrale (2).Integrated inductive device, characterized in that it comprises a central turn (2) arranged between two outer turns (3,4) mutually coupled to the central turn (2) so as to form two substantially eight-shaped patterns having a portion common corresponding to said central turn (2). Dispositif selon la revendication 1, dans lequel la spire centrale (2) est intégralement insérée entre les spires externes (3,4).Device according to claim 1, wherein the central turn (2) is integrally inserted between the outer turns (3,4). Dispositif selon la revendication 1 ou 2, comprenant un axe de symétrie (A) situé dans le plan (P) du dispositif.Device according to claim 1 or 2, comprising an axis of symmetry (A) located in the plane (P) of the device. Dispositif selon la revendication 3, comprenant un axe supplémentaire (B) situé dans le plan (P) du dispositif et perpendiculaire audit axe de symétrie (A) du dispositif, chaque spire externe (3,4) étant sensiblement symétrique par rapport à l'axe supplémentaire (B).Device according to claim 3, comprising an additional axis (B) located in the plane (P) of the device and perpendicular to said axis of symmetry (A) of the device, each outer turn (3,4) being substantially symmetrical with respect to the additional axis (B). Dispositif selon l'une des revendications 2 à 4, dans lequel la spire centrale (2) est ouverte et symétrique par rapport audit axe de symétrie (A) et le dispositif comprend deux moyens d'alimentation (5,6) connectés à la spire centrale (2) au voisinage de son ouverture (C).Device according to one of claims 2 to 4, wherein the central coil (2) is open and symmetrical with respect to said axis of symmetry (A) and the device comprises two supply means (5,6) connected to the coil central (2) in the vicinity of its opening (C). Dispositif selon l'une des revendications 1 à 5, dans lequel la spire centrale (2) est en vis-à-vis de la totalité des spires externes (3,4).Device according to one of claims 1 to 5, wherein the central turn (2) is vis-à-vis the totality of the outer turns (3,4). Circuit intégré comprenant un dispositif inductif intégré selon l'une des revendications 1 à 6.Integrated circuit comprising an integrated inductive device according to one of Claims 1 to 6. Oscillateur commandé en tension (13), comprenant un circuit intégré selon la revendication 7.Voltage controlled oscillator (13), comprising an integrated circuit according to claim 7. Appareil de communication sans fil (10) comprenant un oscillateur commandé en tension (13) selon la revendication 8.A wireless communication apparatus (10) comprising a voltage controlled oscillator (13) according to claim 8.
EP10174810A 2009-09-08 2010-09-01 Integrated inductive device Withdrawn EP2293309A1 (en)

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