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EP2291911B1 - Hbar-resonator mit hohem integrationsgrad - Google Patents

Hbar-resonator mit hohem integrationsgrad Download PDF

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Publication number
EP2291911B1
EP2291911B1 EP09769508A EP09769508A EP2291911B1 EP 2291911 B1 EP2291911 B1 EP 2291911B1 EP 09769508 A EP09769508 A EP 09769508A EP 09769508 A EP09769508 A EP 09769508A EP 2291911 B1 EP2291911 B1 EP 2291911B1
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Prior art keywords
transducer
substrate
frequency
hbar
angle
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English (en)
French (fr)
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EP2291911A1 (de
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Sylvain Ballandras
Dorian Gachon
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Centre National de la Recherche Scientifique CNRS
Universite de Franche-Comte
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Centre National de la Recherche Scientifique CNRS
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02062—Details relating to the vibration mode
    • H03H9/02078—Details relating to the vibration mode the vibration mode being overmoded
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02047—Treatment of substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Definitions

  • the present invention relates to a high-level, high-temperature (High Temperature Acoustic Resonator) type wave resonator, with a corresponding manufacturing method, an oscillator and a filter comprising at least one such resonator.
  • a high-level, high-temperature (High Temperature Acoustic Resonator) type wave resonator with a corresponding manufacturing method, an oscillator and a filter comprising at least one such resonator.
  • Mechanical resonators that is to say produced by mechanical machining of metal, based vacuum electromagnetic cavities delimited by metal walls, are commonly used for temperature stabilization of electric oscillators, as well as for many applications of signal processing (high selectivity filtering, narrowband detection, coding, etc.) based on passive components in the frequency range 2 GHz to 20 GHz, in particular in the field of space activities.
  • Microstrip components are an important step in the integration of passive components used for band filtering in the frequency range 2 GHz to 20 GHz, at the cost of control of thermal drift and at lower cost. quality of resonance.
  • the components are made by lithography of metal tracks on dielectric substrates and thus allow a significant reduction in size. Nevertheless, these objects remain in dimensions of several centimeters, even if they tend to decrease with the rise in frequency. For the frequency range 2 GHz to 20 GHz, they always remain greater than one centimeter.
  • the technical problem is to improve the level of mass and volume integration of high frequency electrical resonators in the frequency range 2 to 20 GHz with high temperature stability.
  • the subject of the invention is also a homodyne oscillator comprising a HBAR resonator as defined above.
  • the subject of the invention is also a high-rejection filter comprising cells based on HBAR resonators as defined above.
  • the figures 1 and 2 represent an embodiment of a high harmonic volume wave type resonator 2 according to the invention.
  • All layers 4, 6, 8 and 10 present on the figure 1 the same length L and the same width W, the length being significantly greater than the width W and the different layer thicknesses e 1 , t 1 , e 2 and t 2 .
  • the electrodes 4, 8 are represented by surfaces equal to those of the piezoelectric transducer 6.
  • the electrodes 4, 8 have surfaces smaller than those of the piezoelectric layer 6, and the upper electrode 4 has a surface smaller than or equal to that of the buried counter-electrode 8.
  • the counterelectrode 8 naturally has a surface greater than that of the upper electrode 4 manufactured by a technique of lithography and deposition of metal layer.
  • the surfaces of the electrodes 4, 8 are arranged facing each other, parallel to one another, the respective zones facing the surfaces being maximum, with the most parallel edges possible. In the ideal case, the surfaces of the electrodes 4, 8 are superimposed perfectly.
  • the excitation of the waves is supposed to correspond to a so-called plane-plane resonator configuration, for which the waves are excited by the very thin electrodes 4, 8 deposited on the surfaces facing the piezoelectric transducer 6, in the direction represented by the arrow 12 according to the figure 2 propagation of shear waves in the transducer 6.
  • the piezoelectric transducer 6 exhibits an excited shear mode according to a directed polarization along the length I of the resonator represented by the vector P A.
  • the acoustic substrate 10 has two shear modes, a first said slow and a second said fast.
  • fast shear waves and so-called shear waves are defined as orthogonal polarization shear waves, the so-called fast waves having a higher phase velocity than the so-called slow waves.
  • the polarization vector P A1 of the excitation corresponding to the shear mode of the transducer 6 is aligned with a referenced polarization vector P B1 corresponding to the slow shear mode of the acoustic substrate.
  • a polarization vector corresponding to the excitation of the fast shear mode is represented on the figure 1 by P B2 orthogonal to P B1 and contained in an extension plane of the substrate 10.
  • the counter-electrode 8 interposed between the transducer 6 and the substrate 10 also serves as a glue for the structure of the resonator 2.
  • the lithium niobate layer (LiNbO 3) constituting the transducer 6 is a plate cut at a first angle of cut ⁇ 1 in a monocrystalline raw material forming a slice called wafer in English.
  • the quartz layer constituting the acoustic substrate 10 is a plate cut at a second angle of cut ⁇ 2 in a slice of monocrystalline quartz crude.
  • the lithium niobate plate 6 is cut at a first angle ⁇ 1 of section from the material of the wafer not shown but marked by its crystallographic axes X 1 , Y 1 , Z 1 , the axis Z 1 being the axis longitudinal of the wafer and the crystallographic axes X 1 , Y 1 being predetermined during the manufacture of the single crystal.
  • the angle ⁇ 1 here is that defined in the IEEE standard Std-176 (revision 1949) as the angle ⁇ 1 of a single-rotation cut around the crystallographic axis X1, the section being noted (Y 1 X 11 ,) / ⁇ 1 in the IEEE standard, X l1 being the axis aligned with the lower right edge of thickness t 1 of length l1 according to the representation of the figure 3 .
  • the reference linked to the cut plate 6 is represented by the three axes X ' 1 , Y' 1 , Z ' 1 , the axis X' 1 coinciding with the axis X 1 .
  • the two axes Y ' 1 , Z' 1 are obtained respectively by the angle rotation ⁇ 1 of the axes X 1 , Y 1 around the axis X 1 .
  • the figure 4 represents the evolution of the phase velocity of the longitudinal and shear waves for single-rotation sections around the crystallographic axis X 11 of the transducer 6.
  • Curve 14 represents the phase velocity of the shear waves propagating in the transducer 6 along the axis normal to the planes of the electrodes 4 and 8, as a function of the first angle of cut ⁇ 1 expressed in degrees.
  • Curve 16 represents the phase velocity of longitudinal waves, expressed in km / s, propagating in transducer 6 along the axis of length l as a function of the first angle ⁇ 1, expressed in degrees.
  • the figure 5 represents the coupling of longitudinal and shear waves for single-rotation cuts around the crystallographic axis X 1 of the transducer 6.
  • Curve 18 represents the evolution of the coupling coefficient K 2 T expressed as a percentage of electrical energy converted into acoustic energy for shear waves as a function of the first angle of cut ⁇ 1 expressed in degrees.
  • Curve 20 represents the evolution of the coupling coefficient K 2 T expressed as a percentage of electrical energy converted into acoustic energy for longitudinal waves as a function of the first torque angle ⁇ 1 expressed in degrees.
  • the angular zone 22 is centered around the angle ⁇ 1 equal to 163 ° and of amplitude equal to 10 °.
  • the torque angle ⁇ 1 of the transducer described in figure 1 is chosen in zone 22 of the figure 6 equal to 163 °.
  • the shear mode excited by piezoelectricity has a scalar polarization along the axis Z ' 1 shown end on the figure 6 , ie normal to the plane (X ' 1 , Y' 1 ), but whose spatial dependence is described by a function of the spatial coordinates according to the excitation plane.
  • the polarization vector P A is collinear with the axis Z ' 1 .
  • the quartz plate 10 is cut at a second cutting angle ⁇ 2 from the raw single crystal of the wafer not shown but marked by the crystallographic axes of the quartz X 2 , Y 2 , Z 2 , the Z 2 axis being the optical axis C revealed during the growth of a crystal gem.
  • the angle ⁇ 2 is also here defined in the standard IEEE Std-176 (revision 1949) as the angle ⁇ 2 of a single-rotation section around the crystallographic axis X 2 , the section being noted (Y 2 , X l2 ) / ⁇ 2 in the IEEE standard Std-176, X l2 being the axis aligned with the lower right edge of thickness t 2 of length L 2 according to the representation of the figure 4 .
  • the reference linked to the cut quartz plate 10 is represented by the three axes X ' 2 , Y' 2 , Z ' 2 , the axis X' 2 coinciding with the axis X 2 .
  • the two axes Y ' 2 , Z' 2 are obtained respectively by the rotation of angle ⁇ 2 of the axes Y 2 , Z 2 around the axis X 2 .
  • the selected shear waves therefore have orthogonal polarizations between them and are coupled only if the alignments of the crystallographic axes of the transducer 6 and the acoustic substrate are suitably selected. These polarizations must be taken into account when assembling the transducer materials and the acoustic substrate in order to allow coupling of the acoustic waves that one wishes to excite in the acoustic propagation substrate 10, here quartz.
  • this acoustic coupling effect is obtained by aligning the axis Z ' 1 of the transducer 6 on the axis X' 2 of the acoustic substrate 10, or in an equivalent manner by aligning the axis X ' 1 of the transducer 6 on the Z 'axis 2 of the acoustic substrate 10, so that the polarization P A is identical to those of shear modes in the acoustic substrate 10 represented by P B1 allowing the compensation of the thermal drift of the phase velocity of the corresponding waves.
  • the figure 9 represents the sensitivity of quartz shear modes to static thermal effects in the form of two temperature coefficients of the first order frequency CTFB1 and CTFB2 for an acoustic substrate 10 plan similar to that of the figure 1 expressed in ppm.K -1 (part per million of the frequency per Kelvin), as a function of the second angle of torque ⁇ 2 expressed in degrees.
  • a first solid line curve 30 represents the evolution of a first temperature coefficient of the first order frequency CTFB1 for the so-called slow piezoelectricity-coupled shear waves as a function of the second angle of cut ⁇ 2, their polarization corresponding to the vector.
  • P B1 oriented along the axis X ' 2 when the value of the second angle of cut ⁇ 2 is between -90 and -24 degrees, and oriented along the axis Z' 2 when ⁇ 2 is between -24 and +90 degrees.
  • a second curve 32 in dashed line represents the evolution of a second temperature coefficient of the first order frequency CTFB2 for the so-called fast piezoelectric shearless waves according to the second cutting angle ⁇ 2, their polarization corresponding to the vector P B2 oriented along the axis Z ' 2 when the value of the second angle of cut ⁇ 2 is between -90 and -24 degrees, and oriented along the axis X' 2 when ⁇ 2 is between -24 and +90 degrees.
  • the so-called fast or fast mode shear waves and the so-called slow or slow mode shear waves are defined as orthogonal polarization shear waves, the so-called fast waves having a higher phase velocity than the so-called slow waves.
  • the polarization vectors P B1 and P B2 of the figure 1 are permuted and should be done rotate the transducer plate 90 degrees, ie the polarization vector P A of the excitation wave of the transducer, so as to align the vectors P A on the polarization vector P B1 slow shear, if one wants to work in constant shear mode.
  • Curve 30 shows the existence of an angular zone 34 in which the first temperature coefficient of the first order frequency CTFB1 for slow shear waves is close to zero and approaches it smoothly.
  • the angular zone 34 is centered around -35 degrees and has an amplitude of 22 degrees thus ensuring a first temperature coefficient of the first order CTFB1 lower frequency in absolute value at 20 ppm.K -1 .
  • the first angle of cut the angle ⁇ 1 of the transducer of the figure 1 is chosen in the zone 22 and the second angle ⁇ 2 of the acoustic substrate is chosen in the zone 34.
  • a HBAR resonator structure may be formed in which the geometric dimensions of the transducer are defined such that the resonator resonates at a desired tuning frequency with additional electrical characteristics resulting from application operation requirements.
  • the additional electrical characteristics are for example the spectral separation between two resonance modes defined as the spectral zone around the resonance mode devoid of other resonances, the electromechanical coupling efficiency of the selected resonance mode, the characteristic resonance impedance , the coefficient of quality at the resonance and the thermal stability of the resonance mode.
  • the spectral separation makes it possible to define the total thickness of the stack of the HBAR resonator layers since the spectral separation corresponds to the fundamental mode frequency of the assembly formed by the transducer and the acoustic substrate including the buried electrode.
  • each layer of the HBAR resonator formed of different materials are adjusted so as to obtain a mode at the desired resonance or tuning frequency.
  • the thickness of the piezoelectric transducer is also determined taking into account the desired electromechanical coupling.
  • the coupling is maximum when the selected mode is close to the fundamental mode of resonance in piezoelectric transducer alone.
  • the ratio of the transducer / acoustic substrate thicknesses is adjusted according to the desired thermal stability and the quality coefficient of the target resonance, knowing that in order to reliably reach the performance of the quality parameter at resonance, it is necessary to know well the viscoelastic constants of the materials used or other physical coefficients with complex values representative of physical properties such as dielectric constants.
  • the imaginary parts of these constants are often determined heuristically or by adjustment of predictive model parameters.
  • the resonance impedance depends on the electromechanical coupling of the selected mode and the value of the facing electrode surfaces. For an impedance given for example 50 ohms, the surfaces facing the electrodes will be larger as the electromechanical coupling of the selected mode is weak.
  • the typical electrode surfaces are between a few hundred ⁇ m 2 and a few mm 2 for stacking thicknesses ranging from mm to a few ⁇ m.
  • the coupling of the electroacoustic vibrations of the transducer 6 with those of the fast mode of the acoustic substrate 10 is carried out through the counterelectrode 8 which acts as a short acoustic circuit in the passband of the transducer 6.
  • the acoustic substrate 10 thus locks the resonance modes of the transducer 6 on its own resonance modes and thereby confers a high temperature stability to the resonance modes of the transducer 6 which left free would drift strongly.
  • the temperature coefficients of the first-order frequency of the piezoelectric HBAR transducers have high values, greater than 80 ppm.K -1 for lithium niobate and 40 ppm.K -1 for lithium tantalate in measured values. absolute.
  • the temperature stability of the resonance modes of the transducer 6 and enslaved is that corresponding to the value of the frequency coefficient of frequency CTFB1 selected through the second angle of cut ⁇ 2 and the alignment of polarization vectors P A , P B1 respectively corresponding to the shear mode of the transducer 6 and to the slow shear mode of quartz 10 for ratios of thicknesses Re of acoustic transduction and propagation medium of less than 5%, for example a ratio of 2.5 ⁇ m of niobate of lithium on 50 microns of quartz, and modes of the structure of the HBAR resonator corresponding neither to the fundamental nor to the odd harmonics of the resonance of the transduction layer alone.
  • the value of the first-order frequency temperature coefficient of the lowest achievable HBAR resonator is equal to -2 ppm.K -1 . It corresponds to a quartz cut (Y 2 , X 12 ) / -32 ° or +/- 5 ° around -32 °.
  • the accuracy of the achievable calculated value is equal to +/- 2 ppm.K -1 given the uncertainty of the physical constants used for the design of the HBAR resonator design.
  • the approximate value of the first order frequency temperature coefficient of the lowest achievable HBAR resonator must be corrected by an additional correction term which represents the contribution of the transduction zone and depends on the order of the resonance and ratio of transducer / acoustic substrate thicknesses.
  • This corrective term is written ⁇ .n with n the integer denoting the order of the resonance mode and a coefficient ⁇ depending on the ratio of the thicknesses Re equal to -3.10 -7 , -1.5, respectively. 10 -7 , -3, 75.10 -8 , -1.875.10 -8 for a ratio of thicknesses Re equal to 5%, 2%, 1%, 0.5%.
  • the figure 10 represents the temperature stability performance of a HBAR resonator according to the invention.
  • the inversion temperature Tinv is the temperature at which the first temperature coefficient of the first order frequency vanishes and changes sign.
  • the figure 10 represents, for four harmonic orders of resonance modes, the evolution of the relative frequency variation expressed in ppm (parts per million) as a function of the temperature of a HBAR resonator formed of a lithium niobate angle transducer. cut ⁇ 1 equal to +163 degrees and thickness 1 microns and a quartz-cutting angle acoustic substrate ⁇ 2 equal to -32 degrees and thickness 50 microns.
  • the evolution is substantially identical for the four resonance orders and the derivative of the evolution curve corresponding to the temperature coefficient of the frequency of the first order of the resonator vanishes for a temperature Tinv equal to -50 ° C.
  • the first-order frequency temperature coefficient of the lithium niobate-based HBAR resonator on quartz is -2 ppm.K-1 for an inversion temperature of about -50 ° C.
  • the CTF2 value of the HBAR resonator obtained is low compared to the second order effects usually measured on quartz alone for a compensated cut of the first order thermal effects, generally greater than 16 ppb.K -2 .
  • the nominal operating temperature of the HBAR resonator can be adjusted without difficulty in the temperature range of -50 ° C to -273 ° C.
  • the figure 11 represents a flow chart of a method of manufacturing 100 a resonator 2 of the figure 1 according to the invention.
  • a piezoelectric transducer 6 constituted by a layer of a first thickness of a first material oriented at an angle ⁇ defined by the nomenclature (YXw) / ⁇ of the standard IEEE Std-176 (revision 1949 ) equal to zero and cut according to a first angle of cut ⁇ 1 defined by the nomenclature (YXl) / ⁇ of the IEEE Std-176 standard (revision 1949), such that the electroacoustic coupling of the shear waves is greater than 5%, the transducer 6 having a temperature coefficient of the CTFA frequency function of the first angle of cut ⁇ 1.
  • the material of the transducer 6 is comprised in the set of materials consisting of aluminum nitride (AIN), zinc oxide (ZnO), lithium niobate (LiNbO 3 ), lithium tantalate (LiTaO 3 ) and potassium niobate.
  • AIN aluminum nitride
  • ZnO zinc oxide
  • LiNbO 3 lithium niobate
  • LiTaO 3 lithium tantalate
  • potassium niobate potassium niobate
  • lithium niobate LiNbO 3
  • lithium tantalate LiTaO 3
  • Niobate and lithium tantalate can be manufactured by 4 "diameter slice according to thickness standards of 500 ⁇ m and 350 ⁇ m.
  • an acoustic substrate 10 constituted by a layer of a second thickness of a second material having a product acoustic quality coefficient working frequency at least equal to 5.10 12 , oriented at a defined angle ⁇ by the nomenclature (YXw) / ⁇ of the IEEE Std-176 standard (revision 1949) equal to zero, cut according to a second angle of cut ⁇ 2 defined by the nomenclature (YXl) / ⁇ of the standard IEEE Std-176 (revision 1949), presenting a direction of polarization P B1 corresponding to a first mode of shear vibration, the acoustic substrate 10 having a temperature coefficient of the first order frequency CTFB1 corresponding to the at least one shear mode and dependent on the second cutting angle ⁇ 2,
  • the second cutting angle ⁇ 2 of the substrate 10 is chosen so that the temperature coefficient of the corresponding first-order frequency CTFB1 is a local extremum in absolute value of less than 20 ppm.K - 1 and the variation of CTFB1 around this value of ⁇ 2 is a lower soft variation in absolute value at 2 ppm.K -1 / degree.
  • the material of the acoustic substrate is comprised in the set of materials constituted by quartz and isomorphic substitutes of the type for example the GeO 2 and TeO 2 , gallium orthophosphate (GaPO 4 ) also of isomorphic structure, potassium niobate, lithium tetraborate (LiB4O 7 ) langasite (La 3 Ga 5 SiO 14 ), langatate, langanite and their different variants.
  • quartz and isomorphic substitutes of the type for example the GeO 2 and TeO 2 , gallium orthophosphate (GaPO 4 ) also of isomorphic structure, potassium niobate, lithium tetraborate (LiB4O 7 ) langasite (La 3 Ga 5 SiO 14 ), langatate, langanite and their different variants.
  • the material of the acoustic substrate is quartz because of its remarkable temperature stability properties and its perfect knowledge in the field of crystallography.
  • a face of the transducer 6 and a face of the acoustic substrate 10 are metallized to a thickness of between 100 and 200 nm by a heat-compressible or cold-compressible metal, for example gold, copper or indium, to bond the two faces and thus form a counter-electrode.
  • a heat-compressible or cold-compressible metal for example gold, copper or indium
  • Gold is a particularly favorable material for this kind of bonding, given its plastic properties and its mechanical strength sufficient to provide an acoustic connection between the transducer 6 and the acoustic substrate 10.
  • the transducer 6 and the acoustic substrate 10 are arranged so that the direction of polarization P A shear mode of the transducer 6 and the direction of polarization P B1 of the at least one shear mode of the substrate 10 corresponding to the second cutting angle ⁇ 2 are aligned.
  • the bonding is carried out by compression with temperature rise or not depending on the metal used.
  • the heating phase is eliminated and a long-lasting pressing is implemented taking advantage of the surface qualities opposite and the ductility of the metallic material to ensure the bonding.
  • lithium niobate / quartz composite platelets could be made in this manner without defects by simply maintaining a temperature of 30 ° C during the 16 hours of application of a pressure of 3000 Newtons.
  • the resonator plate is lapped and polished.
  • an electrode is metallized on a face of the transducer 6 opposite to the substrate.
  • the method is simple to implement in particular thanks to a wide range of values of the second cutting angle ⁇ 2 for obtaining good temperature stability performance.
  • the resonators obtained by this method can operate up to 20 GHz frequencies.
  • the resonators are lightweight and space-saving, offering a high level of integration.
  • Such a resonator may for example be integrated in a homodyne oscillator or in cells of a high rejection filter.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
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  • Ceramic Engineering (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Claims (15)

  1. Volumenwellen-Resonator mit erhöhten harmonischen Moden HBAR, der vorgesehen ist, mit vorgegebener Arbeitsfrequenz zu arbeiten, umfassend:
    einen piezoelektrischen Wandler (6), der von einer Schicht einer ersten Dicke eines ersten Materials gebildet wird, das gemäß einem Windel ϕ, der durch die Nomenklatur (YXw)/ϕ des Standards IEEE Std-176 (Revision 1949) definiert ist, gleich Null orientiert ist, gemäß einem ersten Schnittwinkel θ1 geschnitten ist, der durch die Nomenklatur (YXw)/θ) des Standards IEEE Std-176 (Revision 1949) definiert ist, derart, dass die elektroakustische Kopplung der Scherwellen in diesem Material allein größer als 5% ist, wobei der Wandler (6) einen Temperaturkoeffizienten der Frequenz CTFA als Funktion des ersten Schnittwinkels θ1 besitzt,
    ein akustisches Substrat (10), das von einer Schicht einer zweiten Dicke eines zweiten Materials gebildet wird, das ein Produkt akustischer Gütegrad Arbeitsfrequenz mindestens gleich 5.1012 aufweist, gemäß einem Windel ϕ2, der durch die Nomenklatur (YXw)/ϕ des Standards IE-EE Std-176 (Revision 1949) definiert ist, gleich Null orientiert ist, gemäß einem zweiten Schnittwinkel θ2 geschnitten ist, der durch die Nomenklatur (YXl)/θ) des Standards IEEE Std-176 (Revision 1949) definiert ist, wobei es mindestens eine Polarisationsrichtung P → B ⁢ 1
    Figure imgb0006
     entsprechend einer ersten Scherschwingungsmode aufweiset, wobei das akustische Substrat (10) einen Temperaturkoeffizienten der Frequenz der ersten Ordnung CTFB1 entsprechend der mindestens einen Schermode hat und vom zweiten Schnittwinkel θ2 abhängt,
    eine Gegenelektrode (8), die von einer Metallschicht gebildet wird, die eine erste Fläche des Wandler (6) und eine Fläche des akustischen Substrats (10) verbindet, und
    eine Elektrode (4), die auf einer zweiten Fläche des Wandlers (6) entgegengesetzt zur ersten Fläche des Wandlers und zum Substrat (10) angeordnet ist,
    dadurch gekennzeichnet, dass
    die relative Anordnung des Wandlers (6) und des Substrats (10) derart ist, dass die Polarisationsrichtung P → A
    Figure imgb0007
     der Schermode des Wandlers (6) und die Polarisationsrichtung P → B ⁢ 1
    Figure imgb0008
     der mindestens einen Schermode des Substrats (10), dem zweiten Schnittwinkel θ2 entsprechend, ausgerichtet sind und
    der zweite Schnittwinkel θ2 des Substrats (10) derart ist, dass der korrespondierende Temperaturkoeffizient der Frequenz der ersten Ord-, nung CTFB1 einen lokalen Extremwert bezüglich des Absolutwertes kleiner als 20 ppm.K-1 hat und die Änderung des CTFB1 um diesen Wert von θ2 eine mäßige Änderung bezüglich des Absolutwerts kleiner als 2 ppm.K-1/Grad ist.
  2. HBAR-Resonator nach Anspruch 1, dadurch gekennzeichnet, dass der Temperaturkoeffizient der Frequenz erster Ordnung CTF1 des Resonators im Wesentlichen gleich dem Temperaturkoeffizienten der Frequenz der ersten Ordnung CTFB1 für die Moden des Resonators HBAR ist, die weder der Grundmode noch den ungeraden Harmonischen der Resonanz des Resonators allein entsprechen, wenn das Verhältnis Re der ersten Dicke zu der zweiten Dicke kleiner als 5% ist.
  3. HBAR-Resonator nach einem der Absprüche 1 und 2, dadurch gekennzeichnet, dass der Wert des Temperaturkoeffizienten der Frequenz der ersten Ordnung CTF1 des Resonators gleich dem Temperaturkoeffizienten der Frequenz der ersten Ordnung CTFB1, korrigiert durch einen zusätzlichen Korrekturterm für die Moden des Resonators HBAR ist, die weder der Grundmode noch den ungeraden Harmonischen der Resonanz des Wandlers allein entsprechen, wenn das Verhältnis Re der ersten Dicke zu der zweiten Dicke kleiner als 5% ist, wobei der Korrekturterm sich α.n schreibt, mit n als ganze Zahl, die die Ordnung der Harmonischen der Resonanzmode bezeichnet, und α als Koeffizient, der vom Verhältnis Re der Dicken abhängt, wobei er hinsichtlich des Absolutwertes abhängig von Re abfällt.
  4. HBAR-Resonator nach einem der Ansprüche 1 bis 3, dadurch gakennzeichnet, dass das Material des Wandlers ausgewählt ist aus der Gruppe der Materialien, die durch Aluminiumnitrat (AIN), Zinkoxid (2nO), Lithiumniobat (LiNbO3), Lithiumtantalat (LiTaO3) und Kaliumniobat gebildet wird.
  5. HBAR-Resonator nach Anspruch 4, dadurch gekennzeiehnet, dass das Material des Wandlers vorzugsweise aus der Gruppe ausgewählt ist, die durch Lithiumniobat (LiNbO3) und Lithiumtantalat (LiTaO3) gebildet wird.
  6. HBAR-Resonator nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass das Material des akustischen Substrats aus der Materialgruppe ausgewählt ist, die durch Quarz, Kaliumniobat, Galliumorthophosphat (GaPO4), Lithiumtetraborat (Lib4O7), Lanthangalliumsilikat (La3Ga5SiO14), Lanthangalliumtantalat und Lanthangalliumniobium gebildet wird.
  7. HBAR-Resonator nach Anspruch 6, dadurch gekennzeichnet, dass das Material des akustischen Substrats (10) Quarz ist.
  8. HBAR-Resonator nach einem der Ansprüche 1 bis 7, dadurch gekennzeichnet, dass die Gegenelektrode ein thermokompressibles Metall ist.
  9. HBAR-Resonator nach einem der Ansprüche 1 bis 8, dadurch gekennzeichnet, dass die Gegenelektrode aus Gold oder Kupfer oder Indium besteht.
  10. HBAR-Resonator nach einem der Absprüche 1 bis 9, dadurch gekennzeichnet, dass die geometrischen Abmessungen des Resonators an eine Resonanzfrequenz eines Frequenzbandes angepasst sind, das in der Frequenzskala zwischen 50 MHz und 20 GHz liegt.
  11. HBAR-Resonator nach einem der Ansprüche 1 bis 10, dadurch gekennzeichnet, dass
    das Material des akustischen Substrats Quarz ist,
    der zweite Schnittwinkel θ2 des Substrats (10) gleich -32 Grad ist, und die Polarisationsrichtung P → B ⁢ 1
    Figure imgb0009
     der langsamen Schermode für den Wert von θ2 gleich -32 Grad entspricht.
  12. HBAR-Resonator nach einem der Ansprüche 1 bis 10, dadurch gekennzeichnet, dass
    das Material des Wandlers Kaliumniobat ist und α-jeweils gleich -3.10-7, -1,5.10-7, -3,75.10-8, -1,875.10-8 für ein Verhältnis Re der Dicken jeweils gleich 5%, 2%, 1%, 0,5% ist,
  13. Verfahren zur Herstellung eines HBAR-Resonators, das die Schritte umfasst, die darin bestehen:
    einen piezoelektrischen Wandler (6) bereitzustellen (102), der von einer Schicht einer ersten Dicke eines ersten Materials gebildet wird, das gemäß einem Winkel ϕ, der durch die Nomenklatur (YXw)/ϕ des Standards IEEE Std-176 (Revision 1949) definiert ist, gleich Null orientiert ist, gemäß einem ersten Schnittwinkel θ1 geschnitten ist, der durch die Nomenklatur (YXw)/θ) des Standards IEEE Std-176 (Revision 1949) definiert ist, derart, dass die elektroakustische Kopplung der Scherwellen in diesem Material allein größer als 5% ist, wobei der Wandler (6) einen Temperaturkoeffizienten der Frequenz CTFA als Funktion des ersten Schnittwinkels θ1 besitzt" und
    ein akustisches Substrat bereitzustellen (104), das von einer Schicht einer zweiten Dicke eines zweiten Materials gebildet wird, das ein Produkt akustischer Gütegrad Arbeitsfrequenz mindestens gleich 5.1012 aufweist, gemäß einem Wickel ϕ2, der durch die Nomenklatur (YXw)/ϕ des Standards IEEE Std-176 (Revision 1949) definiert ist, gleich Null orientiert ist, gemäß einem zweiten Schnittwinkel θ2 geschnitten ist,
    der durch die Nomenklatur (YXI)/θ) des Standards IEEE Std-176 (Revision 1949) definiert ist, wobei es mindestens eine Polarisationsrichtung P → B ⁢ 1
    Figure imgb0010
     entsprechend einer ersten Scherschwingungsmode aufweist, wobei das akustische Substrat (10) einen Temperaturkoeffizienten der Frequenz der ersten Ordnung CTFB1 entsprechend der mindestens einen Schermode hat und vom zweiten Schnittwinkel θ2 abhängt, eine Fläche des Substrats (10) und eine erste Fläche des Wandlers (6) mit einem thermokompressiblen Metall zu metallisieren (106), den Wandler (6) und das Substrat (10) zusammenzufügen (108), die jeweiligen Flächen des Substrats (10) und des Wandlers (6), die beim Schritt (106) metallisiert wurden, durch Kompression (110) zu verbinden,
    eine Elektrode (4) auf eine zweite Fläche des Wandlers (6) zu metallisieren (114),
    dadurch gekennzeichnet, dass
    während des Schritts des Zusammenfügens (108) der Wandler (6) in Bezug auf das Substrat (10) derart angeordnet wird, dass die relative Anordnung des Wandlers (6) und des Substrats (10) derart ist, dass die Polarisationsrichtung P → A
    Figure imgb0011
     der Schermode des Wandlers (6) und die Polarisationsrichtung P → B ⁢ 1
    Figure imgb0012
     der mindestens einen Schermode des Substrats (10), dem zweiten Schnittwinkel θ2 entsprechend, r ausgerichtet sind, und
    dass bei dem Schritt (104) des Bereitstellens des Substrats (10) der zweite Schnittwinkel θ2 des Substrats (10) derart gewählt ist, dass der korrespondierende Temperaturkoeffizient der Frequenz der ersten Ordnung CTFB1 einen lokalen Extremwert bezüglich des Absolutwerts kleiner als 20 ppm.K-1 hat und die Änderung von CTFB1 um diesen Wert von θ2 eine mäßige Änderung bezüglich des Absolutwerts kleiner als 2 ppm.K-1/Grad ist.
  14. Homodyner Oszillator, einen HBAR-Resonator nach einem der Ansprüche 1 bis 12 umfassend.
  15. Filter mit erhöhter Bandsperre, das Zellen auf der Grundlage von HBAR-Resonatoren umfasst, die gemäß den Ansprüchen 1 bis 12 definiert sind.
EP09769508A 2008-06-04 2009-05-29 Hbar-resonator mit hohem integrationsgrad Active EP2291911B1 (de)

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FR0853690A FR2932334B1 (fr) 2008-06-04 2008-06-04 Resonateur hbar a integration elevee
PCT/FR2009/051023 WO2009156667A1 (fr) 2008-06-04 2009-05-29 Resonateur hbar a integration elevee

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FR2932334B1 (fr) * 2008-06-04 2010-07-30 Centre Nat Rech Scient Resonateur hbar a integration elevee
FR2938136B1 (fr) * 2008-11-05 2011-03-11 Centre Nat Rech Scient Elements de filtres par couplage transverse sur structures resonantes a ondes de volume a resonances harmoniques multiples.
FR2966306B1 (fr) * 2010-10-15 2013-06-14 Commissariat Energie Atomique Filtre baw a couplage lateral utilisant des cristaux phononiques
FR2970827B1 (fr) 2011-01-21 2013-03-01 Centre Nat Rech Scient Capteur de temperature comportant un resonateur a ondes de volumes a modes harmoniques elevees
RU2468507C1 (ru) * 2011-05-20 2012-11-27 Государственное образовательное учреждение высшего профессионального образования "Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В.И. Ульянова (Ленина)" Резонатор на основе высших типов объемных акустических волн
FR3026582A1 (fr) * 2014-09-29 2016-04-01 Commissariat Energie Atomique Circuit resonant a frequence et a impedance variables

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US3401275A (en) * 1966-04-14 1968-09-10 Clevite Corp Composite resonator
JPS60116217A (ja) * 1983-11-28 1985-06-22 Nippon Telegr & Teleph Corp <Ntt> 複合共振子
JPS60126907A (ja) * 1983-12-12 1985-07-06 Nippon Telegr & Teleph Corp <Ntt> 単一応答複合圧電振動素子
JP3298251B2 (ja) * 1993-08-24 2002-07-02 株式会社村田製作所 弾性表面波装置
US6378367B1 (en) * 1997-02-05 2002-04-30 Sports Sensors, Inc. Miniature sports radar speed measuring device
JP3925124B2 (ja) * 2000-09-20 2007-06-06 株式会社村田製作所 弾性表面波装置の製造方法
US20040129958A1 (en) * 2002-03-08 2004-07-08 Koh Philip J. Compact microwave/millimeter wave filter and method of manufacturing and designing thereof
EP1648085A4 (de) * 2003-07-18 2008-09-24 Nihon Dempa Kogyo Co Sc-schnitt-quarzoszillator
KR100646135B1 (ko) * 2003-07-21 2006-11-23 쌍신전자통신주식회사 실리콘 체적탄성파 소자 및 그 제조방법
EP1742355A1 (de) * 2004-04-30 2007-01-10 Murata Manufacturing Co., Ltd. Piezoelektrischer dünnfilm-vibrator
FR2889375B1 (fr) * 2005-07-29 2008-02-15 Temex Sas Soc Par Actions Simp Structure resonnante hybride
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EP2291911A1 (de) 2011-03-09
US20110210802A1 (en) 2011-09-01
WO2009156667A1 (fr) 2009-12-30
CN102084590A (zh) 2011-06-01
FR2932334A1 (fr) 2009-12-11
US8810106B2 (en) 2014-08-19
CN102084590B (zh) 2014-10-29
JP2011522498A (ja) 2011-07-28
FR2932334B1 (fr) 2010-07-30

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