[go: up one dir, main page]

EP2119806A4 - METHOD FOR FORMING MULTILAYER FILM AND APPARATUS FOR FORMING MULTILAYER FILM - Google Patents

METHOD FOR FORMING MULTILAYER FILM AND APPARATUS FOR FORMING MULTILAYER FILM

Info

Publication number
EP2119806A4
EP2119806A4 EP07859876.0A EP07859876A EP2119806A4 EP 2119806 A4 EP2119806 A4 EP 2119806A4 EP 07859876 A EP07859876 A EP 07859876A EP 2119806 A4 EP2119806 A4 EP 2119806A4
Authority
EP
European Patent Office
Prior art keywords
multilayer film
forming multilayer
forming
film
multilayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07859876.0A
Other languages
German (de)
French (fr)
Other versions
EP2119806A1 (en
Inventor
Isao Kimura
Takehito Jinbo
Shin Kikuchi
Yutaka Nishioka
Koukou Suu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of EP2119806A1 publication Critical patent/EP2119806A1/en
Publication of EP2119806A4 publication Critical patent/EP2119806A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • C23C28/3455—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
    • H01G4/1245—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates containing also titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Ceramic Capacitors (AREA)
EP07859876.0A 2007-01-09 2007-12-20 METHOD FOR FORMING MULTILAYER FILM AND APPARATUS FOR FORMING MULTILAYER FILM Withdrawn EP2119806A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007001354 2007-01-09
PCT/JP2007/074479 WO2008084639A1 (en) 2007-01-09 2007-12-20 Multilayer film forming method and multilayer film forming apparatus

Publications (2)

Publication Number Publication Date
EP2119806A1 EP2119806A1 (en) 2009-11-18
EP2119806A4 true EP2119806A4 (en) 2015-05-06

Family

ID=39608537

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07859876.0A Withdrawn EP2119806A4 (en) 2007-01-09 2007-12-20 METHOD FOR FORMING MULTILAYER FILM AND APPARATUS FOR FORMING MULTILAYER FILM

Country Status (7)

Country Link
US (1) US20090294280A1 (en)
EP (1) EP2119806A4 (en)
JP (1) JP5160452B2 (en)
KR (1) KR101208641B1 (en)
CN (1) CN101583735B (en)
TW (1) TWI409351B (en)
WO (1) WO2008084639A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5399207B2 (en) * 2009-11-05 2014-01-29 日立造船株式会社 Vapor deposition apparatus and vapor deposition method
KR101144125B1 (en) * 2009-11-27 2012-05-24 (주)알파플러스 Sputter gun comprising mask
US8538061B2 (en) * 2010-07-09 2013-09-17 Shure Acquisition Holdings, Inc. Earphone driver and method of manufacture
CN103205685A (en) * 2012-01-16 2013-07-17 昆山允升吉光电科技有限公司 Electroforming mask plate
CN102877026B (en) * 2012-09-27 2014-12-24 中国科学院长春光学精密机械与物理研究所 Vacuum depositing device for multilayer film devices
US10553777B2 (en) 2014-06-20 2020-02-04 Ulvac, Inc. Multi-layered film, method of manufacturing the same, and manufacturing apparatus of the same
TWI513840B (en) * 2014-12-25 2015-12-21 Linco Technology Co Ltd Production method of multilayer film
JP6665856B2 (en) * 2015-04-02 2020-03-13 コニカミノルタ株式会社 Method for manufacturing organic electroluminescence device
RU2669259C2 (en) * 2016-12-09 2018-10-09 Федеральное государственное автономное образовательное учреждение высшего образования "Уральский федеральный университет имени первого Президента России Б.Н. Ельцина" Device for producing films
US10886452B2 (en) * 2018-01-25 2021-01-05 United States Of America As Represented By The Administrator Of Nasa Selective and direct deposition technique for streamlined CMOS processing

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4315960A (en) * 1980-05-28 1982-02-16 Matsushita Electric Industrial Co., Ltd. Method of making a thin film
US4923585A (en) * 1988-11-02 1990-05-08 Arch Development Corporation Sputter deposition for multi-component thin films
JPH05255846A (en) * 1992-03-12 1993-10-05 Toshiba Corp Sputtering device
DE19728473A1 (en) * 1997-07-03 1999-01-07 Siemens Ag Layer structuring by dry etching process
US20030234835A1 (en) * 2002-06-20 2003-12-25 Hideo Torii Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus
US7062348B1 (en) * 2000-07-13 2006-06-13 The Extreme Ultaviolet Lithography Llc Dynamic mask for producing uniform or graded-thickness thin films
US20060278522A1 (en) * 2005-06-13 2006-12-14 Lg.Philips Lcd Co., Ltd. Sputtering apparatus and driving method thereof

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5019234A (en) * 1990-06-08 1991-05-28 Vlsi Technology, Inc. System and method for depositing tungsten/titanium films
JP2688872B2 (en) * 1992-03-30 1997-12-10 アネルバ株式会社 Method for producing PZT thin film and sputtering apparatus
JP3969743B2 (en) * 1996-02-26 2007-09-05 株式会社倉元製作所 Low reflection thin film substrate
KR100464305B1 (en) * 1998-07-07 2005-04-13 삼성전자주식회사 How to Clean PZT Thin Film Using Enchantment
US6214413B1 (en) * 1999-01-13 2001-04-10 Applied Materials, Inc. Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck
SG125891A1 (en) * 2000-09-08 2006-10-30 Semiconductor Energy Lab Light emitting device, method of manufacturing thesame, and thin film forming apparatus
JP5159010B2 (en) * 2000-09-08 2013-03-06 株式会社半導体エネルギー研究所 Method for manufacturing light emitting device
JP2002167661A (en) * 2000-11-30 2002-06-11 Anelva Corp Magnetic multilayer film production equipment
TWI251030B (en) * 2002-01-11 2006-03-11 Jeng-Jung Li Method of manufacturing, plated hybrid optic film by using ion beam to sputter dual target materials
JP4451610B2 (en) * 2002-06-20 2010-04-14 パナソニック株式会社 Piezoelectric element, inkjet head, angular velocity sensor, manufacturing method thereof, and inkjet recording apparatus
JP2006089793A (en) * 2004-09-22 2006-04-06 Sharp Corp Film deposition system
EP1808509A4 (en) * 2004-11-04 2009-11-04 Asahi Glass Co Ltd ION BEAM CATHODIC SPRAY EQUIPMENT AND MULTILAYER FILM FORMATION METHOD FOR REFLECTIVE MASK DRAFT FOR EUV LITHOGRAPHY
TWI384472B (en) * 2005-01-19 2013-02-01 Ulvac Inc Sputtering apparatus and film deposition method
TWI287045B (en) * 2005-05-13 2007-09-21 Applied Vacuum Coating Technol Method for sputter-coating multilayer film on sheet work-piece at low temperature

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4315960A (en) * 1980-05-28 1982-02-16 Matsushita Electric Industrial Co., Ltd. Method of making a thin film
US4923585A (en) * 1988-11-02 1990-05-08 Arch Development Corporation Sputter deposition for multi-component thin films
JPH05255846A (en) * 1992-03-12 1993-10-05 Toshiba Corp Sputtering device
DE19728473A1 (en) * 1997-07-03 1999-01-07 Siemens Ag Layer structuring by dry etching process
US7062348B1 (en) * 2000-07-13 2006-06-13 The Extreme Ultaviolet Lithography Llc Dynamic mask for producing uniform or graded-thickness thin films
US20030234835A1 (en) * 2002-06-20 2003-12-25 Hideo Torii Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus
US20060278522A1 (en) * 2005-06-13 2006-12-14 Lg.Philips Lcd Co., Ltd. Sputtering apparatus and driving method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2008084639A1 *

Also Published As

Publication number Publication date
CN101583735A (en) 2009-11-18
KR20090097211A (en) 2009-09-15
US20090294280A1 (en) 2009-12-03
KR101208641B1 (en) 2012-12-06
EP2119806A1 (en) 2009-11-18
WO2008084639A1 (en) 2008-07-17
TW200835802A (en) 2008-09-01
JP5160452B2 (en) 2013-03-13
CN101583735B (en) 2012-08-22
JPWO2008084639A1 (en) 2010-04-30
TWI409351B (en) 2013-09-21

Similar Documents

Publication Publication Date Title
EP2099063A4 (en) FILM FORMING APPARATUS AND FILM FORMING METHOD
EP2119806A4 (en) METHOD FOR FORMING MULTILAYER FILM AND APPARATUS FOR FORMING MULTILAYER FILM
EP2109407A4 (en) METHOD AND APPARATUS FOR ELECTROCAUTERE
EP2140889A4 (en) METHOD AND APPARATUS FOR HEMODIALFILTRATION
EP2296867A4 (en) METHOD AND APPARATUS FOR FORMING A MULTILAYER PNEUMATIC COMPONENT
EP2334058A4 (en) IMAGE ZOOM METHOD AND APPARATUS
EP2109406A4 (en) METHOD AND APPARATUS FOR ELECTROCAUTERIZATION
EP2155494A4 (en) METHOD AND APPARATUS FOR REGULATING A FILM DEPOSITION
EP2095102A4 (en) APPARATUS AND METHOD FOR INSPECTION
EP1994671A4 (en) METHOD AND APPARATUS FOR A TOKEN
EP2147988A4 (en) BARRIER FILM FORMING APPARATUS, BARRIER FILM FORMING METHOD, AND BARRIER FILM COATED CONTAINER
EP2263383A4 (en) APPARATUS AND METHOD FOR THREE-DIMENSIONAL IMAGE SYNTHESIS WITH MULTIPLE QUICK VIEWS
EP2229465A4 (en) METHOD AND APPARATUS FOR GENERATING PLASMA
EP2357825A4 (en) APPARATUS AND METHOD FOR IMAGE DECODING
EP2007285A4 (en) METHOD AND APPARATUS FOR ULTRASONIC IMAGING
EP2099062A4 (en) FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD
EP2068475A4 (en) METHOD AND APPARATUS FOR SEQUENCE ALLOCATION
EP2351402A4 (en) APPARATUS AND METHOD FOR TRYING EMERGENCY RADIOBALISES
EP2178705A4 (en) IMAGE PROCESSING APPARATUS, IMAGE FORMING APPARATUS, AND IMAGE PROCESSING METHOD
EP2066483A4 (en) APPARATUS FOR STAIR FORMATION AND ASSOCIATED METHODS
EP2346255A4 (en) APPARATUS AND METHOD FOR DECODING IMAGES
EP2156931A4 (en) APPARATUS AND METHOD FOR MANUFACTURING PLASTER PLATE
EP2218714A4 (en) APPARATUS AND METHOD FOR THE SYNTHESIS OF POLYMERS
EP2077667A4 (en) APPARATUS AND METHOD FOR VIDEO DISPLAY
EP2116909A4 (en) DEVELOPING APPARATUS AND IMAGE FORMING APPARATUS

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20090709

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

DAX Request for extension of the european patent (deleted)
RA4 Supplementary search report drawn up and despatched (corrected)

Effective date: 20150407

RIC1 Information provided on ipc code assigned before grant

Ipc: C23C 28/00 20060101ALI20150330BHEP

Ipc: C23C 14/56 20060101ALI20150330BHEP

Ipc: H01L 21/31 20060101ALI20150330BHEP

Ipc: C23C 14/08 20060101ALI20150330BHEP

Ipc: H01L 41/316 20130101ALI20150330BHEP

Ipc: H01G 7/06 20060101ALI20150330BHEP

Ipc: H01L 21/316 20060101ALI20150330BHEP

Ipc: H01L 41/22 20130101ALI20150330BHEP

Ipc: C23C 14/02 20060101ALI20150330BHEP

Ipc: C23C 14/04 20060101AFI20150330BHEP

Ipc: C23C 14/35 20060101ALI20150330BHEP

Ipc: C23C 14/06 20060101ALI20150330BHEP

Ipc: H01G 4/12 20060101ALI20150330BHEP

Ipc: H01G 4/33 20060101ALI20150330BHEP

Ipc: C23C 14/34 20060101ALI20150330BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20151105