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EP2070088A4 - NON-VOLATILE RESISTIVE MEMORIES, LATCHING CIRCUITS, AND OPERATING CIRCUITS COMPRISING TWO-TERMINAL NANOTUBE SWITCHES - Google Patents

NON-VOLATILE RESISTIVE MEMORIES, LATCHING CIRCUITS, AND OPERATING CIRCUITS COMPRISING TWO-TERMINAL NANOTUBE SWITCHES

Info

Publication number
EP2070088A4
EP2070088A4 EP07840800A EP07840800A EP2070088A4 EP 2070088 A4 EP2070088 A4 EP 2070088A4 EP 07840800 A EP07840800 A EP 07840800A EP 07840800 A EP07840800 A EP 07840800A EP 2070088 A4 EP2070088 A4 EP 2070088A4
Authority
EP
European Patent Office
Prior art keywords
circuits
volatile resistive
resistive memories
nanotube switches
terminal nanotube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07840800A
Other languages
German (de)
French (fr)
Other versions
EP2070088A2 (en
Inventor
Claude L Bertin
Thomas Rueckes
Jonathan W Ward
Frank Guo
Steven L Konsek
Mitchell Meinhold
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nantero Inc
Original Assignee
Nantero Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantero Inc filed Critical Nantero Inc
Priority to EP09159271A priority Critical patent/EP2104108A1/en
Priority to EP09159276A priority patent/EP2104109A1/en
Publication of EP2070088A2 publication Critical patent/EP2070088A2/en
Publication of EP2070088A4 publication Critical patent/EP2070088A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/86—Masking faults in memories by using spares or by reconfiguring in serial access memories, e.g. shift registers, CCDs, bubble memories
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/29—Diodes comprising organic-inorganic heterojunctions
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0076—Write operation performed depending on read result
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/19—Memory cell comprising at least a nanowire and only two terminals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
EP07840800A 2006-08-08 2007-08-08 NON-VOLATILE RESISTIVE MEMORIES, LATCHING CIRCUITS, AND OPERATING CIRCUITS COMPRISING TWO-TERMINAL NANOTUBE SWITCHES Withdrawn EP2070088A4 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP09159271A EP2104108A1 (en) 2006-08-08 2007-08-08 Nonvolatile resistive memories, latch circuits, and operation circuits having scalable two-terminal nanotube switches
EP09159276A EP2104109A1 (en) 2006-08-08 2007-08-08 Nonvolatile resistive memories, latch circuits, and operation circuits having scalable two-terminal nanotube switches

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US83634306P 2006-08-08 2006-08-08
US83643706P 2006-08-08 2006-08-08
US84058606P 2006-08-28 2006-08-28
US85510906P 2006-10-27 2006-10-27
US91838807P 2007-03-16 2007-03-16
PCT/US2007/075521 WO2008021912A2 (en) 2006-08-08 2007-08-08 Nonvolatile resistive memories, latch circuits, and operation circuits having scalable two-terminal nanotube switches

Related Child Applications (4)

Application Number Title Priority Date Filing Date
EP09159271A Division EP2104108A1 (en) 2006-08-08 2007-08-08 Nonvolatile resistive memories, latch circuits, and operation circuits having scalable two-terminal nanotube switches
EP09159276A Division EP2104109A1 (en) 2006-08-08 2007-08-08 Nonvolatile resistive memories, latch circuits, and operation circuits having scalable two-terminal nanotube switches
EP09159271.7 Division-Into 2009-05-01
EP09159276.6 Division-Into 2009-05-01

Publications (2)

Publication Number Publication Date
EP2070088A2 EP2070088A2 (en) 2009-06-17
EP2070088A4 true EP2070088A4 (en) 2009-07-29

Family

ID=39082936

Family Applications (5)

Application Number Title Priority Date Filing Date
EP07840800A Withdrawn EP2070088A4 (en) 2006-08-08 2007-08-08 NON-VOLATILE RESISTIVE MEMORIES, LATCHING CIRCUITS, AND OPERATING CIRCUITS COMPRISING TWO-TERMINAL NANOTUBE SWITCHES
EP07840799A Withdrawn EP2057683A4 (en) 2006-08-08 2007-08-08 CROSS-POINT MEMORY AND SWITCHES AND NETWORKS MADE THEREBY USING NON-VOLATILE NANOTUBE BLOCKS
EP07840788A Active EP2057633B1 (en) 2006-08-08 2007-08-08 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
EP09159271A Withdrawn EP2104108A1 (en) 2006-08-08 2007-08-08 Nonvolatile resistive memories, latch circuits, and operation circuits having scalable two-terminal nanotube switches
EP09159276A Withdrawn EP2104109A1 (en) 2006-08-08 2007-08-08 Nonvolatile resistive memories, latch circuits, and operation circuits having scalable two-terminal nanotube switches

Family Applications After (4)

Application Number Title Priority Date Filing Date
EP07840799A Withdrawn EP2057683A4 (en) 2006-08-08 2007-08-08 CROSS-POINT MEMORY AND SWITCHES AND NETWORKS MADE THEREBY USING NON-VOLATILE NANOTUBE BLOCKS
EP07840788A Active EP2057633B1 (en) 2006-08-08 2007-08-08 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
EP09159271A Withdrawn EP2104108A1 (en) 2006-08-08 2007-08-08 Nonvolatile resistive memories, latch circuits, and operation circuits having scalable two-terminal nanotube switches
EP09159276A Withdrawn EP2104109A1 (en) 2006-08-08 2007-08-08 Nonvolatile resistive memories, latch circuits, and operation circuits having scalable two-terminal nanotube switches

Country Status (6)

Country Link
EP (5) EP2070088A4 (en)
JP (4) JP6114487B2 (en)
KR (3) KR101486406B1 (en)
HK (2) HK1137163A1 (en)
TW (3) TWI419163B (en)
WO (3) WO2008021911A2 (en)

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US8102018B2 (en) 2005-05-09 2012-01-24 Nantero Inc. Nonvolatile resistive memories having scalable two-terminal nanotube switches
US9911743B2 (en) 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
CN101681921B (en) * 2007-03-27 2013-03-27 桑迪士克3D公司 Memory cell comprising a carbon nanotube fabric element and a steering element and methods of forming the same
US7982209B2 (en) 2007-03-27 2011-07-19 Sandisk 3D Llc Memory cell comprising a carbon nanotube fabric element and a steering element
US7667999B2 (en) 2007-03-27 2010-02-23 Sandisk 3D Llc Method to program a memory cell comprising a carbon nanotube fabric and a steering element
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US8558220B2 (en) 2007-12-31 2013-10-15 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US8878235B2 (en) * 2007-12-31 2014-11-04 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US8236623B2 (en) 2007-12-31 2012-08-07 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US20090166610A1 (en) * 2007-12-31 2009-07-02 April Schricker Memory cell with planarized carbon nanotube layer and methods of forming the same
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US8304284B2 (en) 2008-04-11 2012-11-06 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same
US8110476B2 (en) 2008-04-11 2012-02-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
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US20100012914A1 (en) * 2008-07-18 2010-01-21 Sandisk 3D Llc Carbon-based resistivity-switching materials and methods of forming the same
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