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EP1919822A1 - Method of sealing or welding two elements to one another - Google Patents

Method of sealing or welding two elements to one another

Info

Publication number
EP1919822A1
EP1919822A1 EP06808248A EP06808248A EP1919822A1 EP 1919822 A1 EP1919822 A1 EP 1919822A1 EP 06808248 A EP06808248 A EP 06808248A EP 06808248 A EP06808248 A EP 06808248A EP 1919822 A1 EP1919822 A1 EP 1919822A1
Authority
EP
European Patent Office
Prior art keywords
sealing
elements
welding
sealing material
wettability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06808248A
Other languages
German (de)
French (fr)
Inventor
François Marion
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of EP1919822A1 publication Critical patent/EP1919822A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/002—Aligning microparts
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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Definitions

  • PROCESS FOR SEALING OR SOLDING TWO ELEMENTS BETWEEN THEM PROCESS FOR SEALING OR SOLDING TWO ELEMENTS BETWEEN THEM.
  • the invention relates to the field of microelectronics, and more particularly that of hybridization and welding techniques, in particular waterproof and hermetic a cover or a protective housing on active components, electrical or electronic.
  • the invention thus relates to the more general field of microcomponents, more conventionally referred to as electronic chips, but also to micro-sensors, micro-actuators, such as MEMs (according to the Anglo-Saxon expression “Micro Electro-Mechanical System”) etc. ....
  • microcomponents that are the subject of the present invention are conventionally deposited on a substrate of appropriate nature, for example of the semiconductor type (monocrystalline silicon, sapphire, etc.) for electronic components.
  • These substrates are provided with electrically conductive tracks, which radiate from the microcomponent in the direction of the periphery of the substrate, in order to allow, in addition to the electrical power supply of the component, if necessary, also, and above all, the treatment and the exploitation of the signals that said component is called to generate, or the control of the functions that it incorporates.
  • these components are encapsulated within a structure of the type housing or protective cover or equivalent, which provides protection against shock, corrosion, parasitic electromagnetic radiation, etc.
  • This cover or housing may further incorporate a transparent window to electromagnetic radiation to be detected by said component, or integrate one or more concentration lenses of said radiation at the component.
  • microcomponents require, for their operation, to work under vacuum or under a controlled atmosphere (pressure, neutral gas, etc.) or in a sealed manner with respect to the ambient atmosphere.
  • a controlled atmosphere pressure, neutral gas, etc.
  • the aforesaid housing or hood is used to define a cavity above said component, containing the controlled atmosphere or a vacuum more or less advanced.
  • various technical problems are grafted during their production.
  • wafer welding on wafer (wafer being the Anglo-Saxon expression dedicated to designate a wafer of a semiconductor substrate). It thus comes to cap the wafer containing the electrical or electronic components or with another wafer in which have already machined one or more cavities specific to define the volume to be confined.
  • Fixing occurs by welding, especially anodic, melting or sintering of the glass.
  • the principle thus implemented if it gives satisfaction in terms of tightness, on the other hand presents some difficulties with regard to the connection. Indeed, the access to interconnect pads or pads to allow the welding of the son of connectors is complex, so that the topology that can be implemented is limited. Moreover, a high welding temperature is generally required, so that it limits quite drastically the number of electronic components that can be implemented within the volumes thus defined.
  • hoods by deposition of thin layers.
  • an active component cavity is formed on a wafer and then capped using thin film sealing techniques.
  • a LPCVD Low Pressure Chemical Vapor Deposition
  • the dimensions of the cover can be reduced to those of the active component.
  • a hood or housing on a wafer by implementing either chips - hood, that is to say that each active component receives a hood, or by the implementation of a larger chip that can cover several active components on a single wafer.
  • This technique is conventionally carried out in several stages: it consists of aligning the cap (s) above the components, all within a chamber capable of providing a controlled atmosphere or, on the contrary, a vacuum enclosure, then sealing the or the covers on the component (s) according to technologies known to those skilled in the art, including implementing a solder joint made for example of indium or tin / lead alloy.
  • FIGS. 1 to 3 show this particular embodiment thus described.
  • a wafer 1 made for example of silicon is reported by conventional techniques an electronic component 3.
  • a surface or wettability zone 5 intended to receive a weld bead 8 made of indium or a tin / lead alloy.
  • the balls 7 defining the caliper supporting the cover 2 are positioned outside the weld bead, the assembly being placed within an enclosure in which the desired controlled atmosphere or vacuum prevails.
  • a simple rise in temperature, sufficient to melt the material constituting the balls 7 and the weld bead 8, makes it possible to induce the lowering of the cover 2 until the latter comes into contact with said weld bead so as to to ensure the tight closure of the cavity thus defined.
  • the balls 7 are also positioned on a wettability surface 6.
  • the underside of the cover 2 also receives wettability surfaces, respectively 5 'and 6'. .
  • cowhide hood type hood rollover techniques requires the realization of the effective sealing operation of the bonnet under controlled atmosphere.
  • thermocompression In order to achieve such a weld without flux, it has been proposed to make the cowling by thermocompression. This technique consists in performing the pressing at a temperature below the melting temperature of the welding material. Said material is generally found on both sides before the welding operation.
  • the AuSn alloy is a material with a high Young's modulus, thus not satisfying this requirement in terms of mechanical properties.
  • the present invention therefore aims at a welding or sealing process, combining both a low cost of implementation, and optimized reliability of the final component.
  • This method of welding or sealing two elements between them positioned within a chamber within which the vacuum or a controlled atmosphere prevails consists of: to achieve on the surfaces facing the elements to be welded, a wettability zone, also called hooked surface; depositing on one of these areas a quantity of suitable sealing material; bringing the wettability zone of the other element into contact with said deposited material; to raise the temperature of the enclosure in which the elements to be welded or sealed are positioned, until at least the melting temperature of the sealing material is reached, in order to ensure the effective sealing of the two elements together by effect of reflow.
  • the wettability zone of the element which has not received the sealing or welding material consists of a layer of gold; the surface of the wettability zone of the element positioned in contact with the sealing material is greater than the surface of the wettability zone on which said material is deposited (so-called UBM layer for the English expression "Under Bump Metallization”"); the sealing material is indium; and the melting of said sealing material in order to effectively seal the two elements together takes place at a temperature greater than 250 ° C. under a non-oxidizing atmosphere, and advantageously greater than 300 ° C.
  • the invention consists in implementing these four cumulative conditions, which makes it possible to use a bead of indium as a sealing material, of which, in known manner, the raw material costs are very much lower those of the alloy gold / tin, and this typically by a factor of 10.
  • the invention consists in carrying out the melting of the sealing material at a temperature that is very much greater than that of the effective melting of the iridium. Indeed, even though the melting temperature of iridium is 156 ° C., the temperature recommended by the invention for sealing is 250 ° C., or even 300 ° C., ie more than 1.6 times. the melting temperature of indium.
  • iridium is a soft or relatively ductile material, and its mechanical properties make it possible: to drastically relax the post-welding stresses between the assembled elements; to develop increased reliability compared with gold-based welds, particularly in relation to the thermal cycling encountered by detectors implementing such technology, these thermal cycling being well known to generate shears and thus rapid failures because of the differences in coefficients of thermal expansion between the materials used.
  • the surface of the wettability zone, and in particular its width when it is a ribbon, of the element positioned on the sealing material is at least one and a half times greater than that of the corresponding surface or size of the underlying wettability zone UBM.
  • the reflow temperature ensuring the effective sealing of the two elements together is greater than 300 ° C.
  • FIGS. 1, 2 and 3 illustrate the prior state of the art
  • FIGS. 1 and 3 being diagrammatic representations in section of a support substrate and a cover, respectively before and after elevation. temperature causing reflow of the sealing bead
  • Figure 2 being a schematic view of the upper face of the substrate.
  • Figure 4 is also a sectional view of a detail of the prior art.
  • Figure 5 is a schematic representation in section of a detail of the general principle of the invention
  • Figure 6 is a schematic sectional view of a hood prior to its sealing on wafer.
  • Figure 4 is a sectional view to illustrate in more detail the prior art.
  • the surfaces S1 and S2 respectively of the so-called "UBM" metallization layer 5 formed on the substrate 1 and of the wettability zone 5 'made on the underside of the cap are substantially of the same dimensions.
  • the weld bead 8 or in general, the sealing material is constituted gold / tin AuSn.
  • FIG. 5, which illustrates the invention, is very clearly intended to indicate the various characteristics that are specific to it.
  • zones of wettability 10 and 11 are used.
  • these wettability zones are made of gold, to the exclusion of any other material.
  • These gold layers surmount a layer acting as a barrier and hooked, typically made of titanium alloy, such as TiNi, TiW, TiPd, etc.
  • the dimensions of the wettability zones 10 and 11, respectively receiving the weld bead 8 and made on the cover 2 are of different geometry.
  • the sealing material is made of indium to the exclusion of any other material.
  • this technology significantly reduces the costs associated with deposition of sealant or solder material by eliminating any photo-masking step while allowing the use of available full-slice solder deposition techniques.
  • the indium layer can be reformed under a deoxidizing flow. It is carried out at a temperature above the melting point of indium, and therefore greater than 156 ° C., and advantageously greater than 170 ° C.
  • This indium layer is deposited on the metallization zone 10 made of gold, platinum or another noble material, and of surface Sl, in this case of width S1.
  • the wettability zone 11, limited to gold, made on the underside of the cap 2 has a surface S2, and in this case it is a ribbon with a width S2 greater than the width.
  • Sl of the metallization zone 10 and typically more than one and a half times greater than the latter.
  • the sealing operation of the cover 2 on the substrate 1 is carried out by reflow at a temperature greater than 250 ° C. It is advantageously greater than 300 ° C. and is carried out under a non-oxidizing atmosphere, typically under vacuum or under a rare gas .
  • This high temperature allows the continuous formation of intermediate gold / indium binary compounds, capable of maintaining the materials of the contact zone between the weld bead 8 or the connecting beads or microbeads 7 in the liquid state during the process of welding, and thus promote hermeticity.
  • This technology makes it possible to achieve collective and simultaneous rollover of many components made on a single semiconductor plate. It also allows hybridization of multi-chip modules to be carried out, without the need for cleaning of any flow and without a time limit which is intimately linked to it.
  • the invention makes it possible to produce infrared detection matrices with bolometric detectors under vacuum on a CMOS plate by transferring caps that are transparent to infrared radiation, and possibly provided with getter layers.
  • caps that are transparent to infrared radiation, and possibly provided with getter layers.
  • hybrid optical components on a silicon bench and tight hoods with possibly the implementation of optical and / or intraconnections on the hood.
  • MEMS collectively covered under vacuum on a CMOS plate by carrying caps possibly provided with getter layers.

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Abstract

The invention relates to a method of sealing or welding two elements to one another in a chamber under vacuum or controlled atmosphere. The inventive method comprises the following steps consisting in: producing a wettability area (10, 11) on the opposing faces of the elements to be welded, one of said areas (11) comprising a layer of gold and having a surface area (S2) greater than the surface area (S1) of the other wettability area; depositing a quantity of suitable sealing material on one (10) of the areas, said material comprising indium; bringing the wettability area (11) of the other element into contact with the material thus deposited; and raising the temperature of the chamber containing the elements to be welded or sealed to at least 250 °C in a non-oxidising atmosphere, in order to seal the two elements effectively to one another by means of remelting.

Description

PROCÈDE DE SCELLEMENT OU DE SOUDURE DE DEUX ÉLÉMENTS ENTRE EUX.PROCESS FOR SEALING OR SOLDING TWO ELEMENTS BETWEEN THEM.

DOMAINE DE L'INVENTIONFIELD OF THE INVENTION

L'invention concerne le domaine de la microélectronique, et plus particulièrement celui des techniques d'hybridation et de soudure, notamment étanche et hermétique d'un capot ou d'un boîtier de protection sur des composants actifs, électriques ou électroniques.The invention relates to the field of microelectronics, and more particularly that of hybridization and welding techniques, in particular waterproof and hermetic a cover or a protective housing on active components, electrical or electronic.

L'invention se rattache donc au domaine plus général des microcomposants, plus classiquement dénommés puces électroniques, mais également aux micro-capteurs, micro-actuateurs, tels que les MEMs (selon l'expression anglo-saxonne « Micro Electro-mechanical System) etc....The invention thus relates to the more general field of microcomponents, more conventionally referred to as electronic chips, but also to micro-sensors, micro-actuators, such as MEMs (according to the Anglo-Saxon expression "Micro Electro-Mechanical System") etc. ....

ETAT ANTÉRIEURDE LA TECHNIQUEPRIOR STATE OF THE ART

Les microcomposants dont il est question dans la présente invention, sont classiquement déposés sur un substrat de nature appropriée, par exemple de type semiconducteur (silicium monocristallin, saphir, etc) pour des composants électroniques.The microcomponents that are the subject of the present invention are conventionally deposited on a substrate of appropriate nature, for example of the semiconductor type (monocrystalline silicon, sapphire, etc.) for electronic components.

Ces substrats sont munis de pistes conductrices de l'électricité, qui rayonnent à partir du microcomposant en direction de la périphérie du substrat, afin de permettre outre l'alimentation électrique du composant, le cas échéant, requise, également et surtout le traitement et l'exploitation des signaux que ledit composant est appelé à générer, ou encore le pilotage des fonctions qu'il incorpore.These substrates are provided with electrically conductive tracks, which radiate from the microcomponent in the direction of the periphery of the substrate, in order to allow, in addition to the electrical power supply of the component, if necessary, also, and above all, the treatment and the exploitation of the signals that said component is called to generate, or the control of the functions that it incorporates.

Dans certains cas, ces composants sont encapsulés au sein d'une structure de type boîtier ou capot de protection ou équivalent, qui permet d'assurer une protection contre les chocs, la corrosion, les rayons électromagnétiques parasites, etc. Ce capot ou boîtier peut en outre intégrer une fenêtre transparente à un rayonnement électromagnétique à détecter par ledit composant, ou intégrer une ou plusieurs lentilles de concentration dudit rayonnement au niveau du composant.In some cases, these components are encapsulated within a structure of the type housing or protective cover or equivalent, which provides protection against shock, corrosion, parasitic electromagnetic radiation, etc.. This cover or housing may further incorporate a transparent window to electromagnetic radiation to be detected by said component, or integrate one or more concentration lenses of said radiation at the component.

Certains de ces microcomposants nécessitent pour leur fonctionnement de travailler sous vide ou sous atmosphère contrôlée (pression, gaz neutre, etc.) ou de manière étanche par rapport à l'atmosphère ambiante. De fait, le boîtier ou capot précité est mis à contribution afin de définir une cavité au-dessus dudit composant, renfermant l'atmosphère contrôlée ou un vide plus ou moins poussé. Dans le cas particulier de ces microcomposants encapsulés, différents problèmes techniques viennent se greffer lors de leur réalisation.Some of these microcomponents require, for their operation, to work under vacuum or under a controlled atmosphere (pressure, neutral gas, etc.) or in a sealed manner with respect to the ambient atmosphere. In fact, the aforesaid housing or hood is used to define a cavity above said component, containing the controlled atmosphere or a vacuum more or less advanced. In the particular case of these encapsulated microcomponents, various technical problems are grafted during their production.

Tout d'abord, intervient la qualité de l'herméticité de la liaison capot ou boîtier avec le composant pour s'assurer de l'isolation effective dudit composant par rapport aux agents extérieurs, et ce, de manière indépendante de la nature de l'atmosphère alors emprisonnée dans le volume défini.First, intervenes the quality of the hermeticity of the bonnet or housing connection with the component to ensure the effective insulation of said component relative to the external agents, and this, independently of the nature of the atmosphere then trapped in the defined volume.

Il convient ensuite de pouvoir contrôler la nature de l'atmosphère confinée dans ledit volume, imposant de fait que cette atmosphère soit communiquée au sein de ce volume préalablement au scellement, et de manière générale à la fixation du capot sur le composant.It is then necessary to be able to control the nature of the atmosphere confined in said volume, imposing in fact that this atmosphere is communicated within this volume prior to sealing, and generally to fixing the cover on the component.

Différentes techniques ont été mises en œuvre à ce jour pour permettre la réalisation d'une telle encapsulation d'un composant électrique ou électronique.Various techniques have been implemented to date to allow the realization of such an encapsulation of an electrical or electronic component.

Parmi celles-ci, figure le principe du soudage wafer sur wafer (wafer étant l'expression anglo-saxonne consacrée pour désigner une plaquette d'un substrat semi-conducteur). On vient ainsi coiffer le wafer contenant le ou les composants électriques ou électroniques avec un autre wafer dans lequel ont déjà usinées un ou plusieurs cavités propres à définir le volume à confiner.Among these is the principle of wafer welding on wafer (wafer being the Anglo-Saxon expression dedicated to designate a wafer of a semiconductor substrate). It thus comes to cap the wafer containing the electrical or electronic components or with another wafer in which have already machined one or more cavities specific to define the volume to be confined.

La fixation intervient par soudage, notamment anodique, par fusion ou par scellement par frittage du verre. Le principe ainsi mis en œuvre, s'il donne satisfaction sur le plan de l'étanchéité, en revanche présente quelques difficultés s'agissant de la connectique. En effet, l'accès aux plots d'interconnexion ou pads pour permettre le soudage des fils de connectique s'avère complexe, de sorte que la topologie susceptible d'être mise en œuvre est limitée. Au demeurant, une haute température de soudage est généralement requise, de sorte que cela limite de manière assez drastique le nombre de composants électroniques susceptibles d'être mis en œuvre au sein des volumes ainsi définis.Fixing occurs by welding, especially anodic, melting or sintering of the glass. The principle thus implemented, if it gives satisfaction in terms of tightness, on the other hand presents some difficulties with regard to the connection. Indeed, the access to interconnect pads or pads to allow the welding of the son of connectors is complex, so that the topology that can be implemented is limited. Moreover, a high welding temperature is generally required, so that it limits quite drastically the number of electronic components that can be implemented within the volumes thus defined.

Une autre alternative consiste à réaliser des capots par dépôt de couches minces. Ainsi, une cavité pour composant actif est formée sur un wafer, puis bouchée en utilisant des techniques de scellement en couches minces. Par exemple, on fait croître une couche par LPCVD (« Low Pressure Chemical Vapor Déposition ») ou simplement en recouvrant la cavité. Les dimensions du capot peuvent se réduire à celles du composant actif. Si cette technique est certes complexe à mettre en œuvre, elle présente cependant l'avantage de pouvoir sceller collectivement de nombreux wafers comportant des composants actifs de très petites dimensions.Another alternative is to make hoods by deposition of thin layers. Thus, an active component cavity is formed on a wafer and then capped using thin film sealing techniques. For example, a LPCVD ("Low Pressure Chemical Vapor Deposition") layer is grown or simply by covering the cavity. The dimensions of the cover can be reduced to those of the active component. Although this technique is certainly complex to implement, it has the advantage of being able to collectively seal many wafers with active components of very small dimensions.

Enfin, une autre technique consiste à souder un capot ou boîtier sur un wafer, en mettant en œuvre soit des puces - capot, c'est-à-dire que chaque composant actif reçoit un capot, soit encore par la mise en œuvre d'une puce plus large, susceptible de recouvrir plusieurs composants actifs sur un seul wafer.Finally, another technique is to weld a hood or housing on a wafer, by implementing either chips - hood, that is to say that each active component receives a hood, or by the implementation of a larger chip that can cover several active components on a single wafer.

Cette technique s'effectue classiquement sur plusieurs étapes : elle consiste à aligner le ou les capots au-dessus des composants, le tout au sein d'une enceinte propre à assurer une atmosphère contrôlée ou au contraire une enceinte sous vide, puis à sceller le ou les capots sur le(s) composant(s) selon des technologies connues de l'homme du métier, mettant notamment en œuvre un joint de soudure réalisé par exemple en indium ou en alliage étain/plomb.This technique is conventionally carried out in several stages: it consists of aligning the cap (s) above the components, all within a chamber capable of providing a controlled atmosphere or, on the contrary, a vacuum enclosure, then sealing the or the covers on the component (s) according to technologies known to those skilled in the art, including implementing a solder joint made for example of indium or tin / lead alloy.

On conçoit aisément que, dès lors qu'une multiplicité de ce type d'opérations doit être effectuée, ou que l'on mette en œuvre un support multi - composants, l'installation destinée à assurer ces opérations devient très complexe, attendu que l'ensemble de celles-ci doit être opéré au sein de l'enceinte assurant comme déjà dit le maintien de l'atmosphère contrôlée ou le maintien sous vide. En outre, une telle opération est fortement consommatrice de temps puisqu'elle doit se répéter autant de fois qu'il y a de capots à sceller. Ce faisant, le coût induit s'avère important.It is easy to understand that, since a multiplicity of this type of operation must be performed, or that a multi-component support is implemented, the installation intended to ensure these operations becomes very complex, since all of these must be operated within the enclosure ensuring as already said the maintenance of the controlled atmosphere or maintenance under vacuum. In addition, such an operation is highly time consuming since it must be repeated as many times as there are caps to seal. In doing so, the induced cost turns out to be important.

Afin d'optimiser cette durée, on a proposé une solution dans le document FR 2 780 200, qui illustre dans l'une de ses formes de réalisation, la mise en œuvre d'un composant électrique encapsulé. On a représenté en relation avec les figures 1 à 3, cette forme de réalisation particulière ainsi décrite.In order to optimize this duration, a solution has been proposed in document FR 2 780 200, which illustrates in one of its embodiments the implementation of an encapsulated electrical component. FIGS. 1 to 3 show this particular embodiment thus described.

Ainsi, sur un wafer 1 réalisé par exemple en silicium, est rapporté par les techniques classiques un composant électronique 3. Sur la surface supérieure 4 du wafer 1 et à la périphérie du composant électronique 3 est réalisée une surface ou zone de mouillabilité 5, destinée à recevoir un cordon de soudure 8 réalisé en indium ou en un alliage étain/plomb. Ce document mentionne également la présence d'une calle constituée de billes 7, également réalisées en un matériau thermofusible, avantageusement identique à celui constitutif du cordon de soudure 8, et sur lesquelles repose un capot 2, propre à définir, avec le wafer 1 et le cordon de soudure 8, la cavité recherchée 9 contenant l'atmosphère contrôlée ou au contraire le vide.Thus, on a wafer 1 made for example of silicon, is reported by conventional techniques an electronic component 3. On the upper surface 4 of the wafer 1 and the periphery of the electronic component 3 is formed a surface or wettability zone 5, intended to receive a weld bead 8 made of indium or a tin / lead alloy. This document also mentions the presence of a calle consisting of balls 7, also made of a thermofusible material, advantageously identical to that constituting the weld bead 8, and on which rests a cover 2, suitable for defining, with the wafer 1 and the weld bead 8, the desired cavity 9 containing the controlled atmosphere or on the contrary the vacuum.

Afin de ménager au sein de ladite cavité 9 l'atmosphère souhaitée, les billes 7 définissant la calle supportant le capot 2 sont positionnées à l'extérieur du cordon de soudure, l'ensemble étant placé au sein d'une enceinte au sein de laquelle règne l'atmosphère contrôlée souhaitée ou le vide. Une simple élévation de température, suffisante pour faire fondre le matériau constitutif des billes 7 et du cordon de soudure 8, permet d'induire l'abaissement du capot 2 jusqu'à ce que ce dernier entre en contact avec ledit cordon de soudure, afin d'assurer la fermeture étanche de la cavité ainsi définie.In order to provide the desired atmosphere within said cavity 9, the balls 7 defining the caliper supporting the cover 2 are positioned outside the weld bead, the assembly being placed within an enclosure in which the desired controlled atmosphere or vacuum prevails. A simple rise in temperature, sufficient to melt the material constituting the balls 7 and the weld bead 8, makes it possible to induce the lowering of the cover 2 until the latter comes into contact with said weld bead so as to to ensure the tight closure of the cavity thus defined.

Dans la pratique, les billes 7 sont également positionnées sur une surface de mouillabilité 6. De même, afin de favoriser le contact, et surtout l'étanchéité, la face inférieure du capot 2 reçoit également des surfaces de mouillabilité, respectivement 5' et 6'.In practice, the balls 7 are also positioned on a wettability surface 6. Similarly, in order to promote contact, and especially sealing, the underside of the cover 2 also receives wettability surfaces, respectively 5 'and 6'. .

Ce faisant, la mise en oeuvre d'une telle technologie permet de gagner un temps considérable par rapport au procédé précédemment décrit. Cette diminution de la durée d'encapsulation est très significative, puisque la durée de mise sous atmosphère contrôlée ou de mise sous vide est très supérieure à la durée du dépôt du capot.In doing so, the implementation of such a technology saves considerable time compared to the previously described method. This reduction in encapsulation time is very significant, since the duration of placing under controlled atmosphere or vacuum is much greater than the duration of the deposition of the hood.

Si sur le plan théorique, la solution technique proposée par ce document s'avère des plus intéressante, la mise en œuvre des techniques de capotage par cordon de soudure de type capot sur wafer impose la réalisation de l'opération de scellement effectif du capot sous atmosphère contrôlée.If theoretically, the technical solution proposed by this document proves most interesting, the implementation of cowhide hood type hood rollover techniques requires the realization of the effective sealing operation of the bonnet under controlled atmosphere.

Plus précisément, la brasure de l'indium sur une surface réalisée en or nécessite la mise en oeuvre d'agents désoxydants liquides ou gazeux, également dénommée soudure sous flux.More precisely, the brazing of indium on a surface made of gold requires the use of liquid or gaseous deoxidizing agents, also known as flux welding.

Or, l'utilisation de flux de soudure est prohibée, car la pratique montre qu'un tel flux engendre la présence proscrite de résidus de flux non nettoyables en fin de soudure, en raison même de l'herméticité du scellement opéré. Au surplus, lorsque l'on effectue ce scellement ou cette soudure sous vide, il n'est pas envisageable d'utiliser un flux, attendu que celui-ci dégaze en général lors de l'élévation de température engendrant la fusion pour réaliser la soudure.However, the use of solder flux is prohibited, because practice shows that such a flow generates the proscribed presence of uncleanable flow residues at the end of welding, because of the tightness of the sealed operation. Moreover, when this sealing is done or this welding under vacuum, it is not possible to use a flow, since it usually degasses during the rise in temperature causing fusion to achieve the weld .

Afin de réaliser une telle soudure sans flux, on a proposé de réaliser le capotage par thermocompression. Cette technique consiste à effectuer le pressage à une température inférieure à la température de fusion du matériau de soudure. Ledit matériau se retrouve généralement des deux cotés avant l'opération de soudure.In order to achieve such a weld without flux, it has been proposed to make the cowling by thermocompression. This technique consists in performing the pressing at a temperature below the melting temperature of the welding material. Said material is generally found on both sides before the welding operation.

Cette technique particulière s'avère coûteuse et en outre consommatrice de temps puisque le caractère collectif du scellement est difficile, voire impossible.This particular technique is expensive and also time consuming since the collective nature of the seal is difficult, if not impossible.

On a également proposé afin de solutionner ce problème, de mettre en œuvre un matériau de soudure inoxydable.It has also been proposed to solve this problem, to implement a stainless solder material.

On souhaite cependant qu'un tel matériau soit d'un coût de mise en œuvre réduit, notamment au regard du coût engendré par l'utilisation de l'alliage or/étain AuSn, et qu'en outre, les propriétés mécaniques de la structure finale permette une excellente fiabilité du dispositif final, susceptible notamment de résister aux excursions thermiques. On veut également s'affranchir des phénomènes de dégazage, nés de la présence d'éventuels résidus issus du flux de soudure.It is desired, however, that such a material be of reduced implementation cost, especially with regard to the cost generated by the use of AuSn gold / tin alloy, and that, in addition, the mechanical properties of the structure final allows excellent reliability of the final device, likely to resist thermal excursions. We also want to get rid of degassing phenomena, born from the presence of possible residues from the weld flux.

Or, l'alliage AuSn est un matériau à fort module d'Young, donc ne satisfaisant pas à cette exigence en termes de propriétés mécaniques.However, the AuSn alloy is a material with a high Young's modulus, thus not satisfying this requirement in terms of mechanical properties.

En d'autres termes, tant les technologies que les matériaux connus de l'art antérieur ne permettent pas de satisfaire le but recherché par la présente invention.In other words, both the technologies and the materials known from the prior art do not meet the purpose of the present invention.

EXPOSE DE L'INVENTIONSUMMARY OF THE INVENTION

La présente invention vise donc un procédé de soudure ou de scellement, alliant à la fois un faible coût de mise en œuvre, et une fiabilité optimisée du composant final.The present invention therefore aims at a welding or sealing process, combining both a low cost of implementation, and optimized reliability of the final component.

Ce procédé de soudure ou de scellement de deux éléments entre eux positionnés au sein d'une enceinte au sein de laquelle règne le vide ou une atmosphère contrôlée, consiste : à réaliser sur les surfaces en regard des éléments à souder, une zone de mouillabilité, également dénommée surface d'accroché ; à déposer sur l'une de ces zones une quantité de matériau de scellement appropriée ; - à mettre en contact la zone de mouillabilité de l'autre élément sur ledit matériau ainsi déposé ; à élever la température de l'enceinte au sein de laquelle sont positionnés les éléments à souder ou à sceller, jusqu'à atteindre au moins la température de fusion du matériau de scellement, pour assurer le scellement effectif des deux éléments entre eux par effet de refusion.This method of welding or sealing two elements between them positioned within a chamber within which the vacuum or a controlled atmosphere prevails, consists of: to achieve on the surfaces facing the elements to be welded, a wettability zone, also called hooked surface; depositing on one of these areas a quantity of suitable sealing material; bringing the wettability zone of the other element into contact with said deposited material; to raise the temperature of the enclosure in which the elements to be welded or sealed are positioned, until at least the melting temperature of the sealing material is reached, in order to ensure the effective sealing of the two elements together by effect of reflow.

Selon l'invention : la zone de mouillabilité de l'élément n'ayant pas reçu le matériau de scellement ou de soudure est constituée d'une couche d'or ; - la surface de la zone de mouillabilité de l'élément positionné au contact du matériau de scellement est supérieure à la surface de la zone de mouillabilité sur laquelle est déposée ledit matériau (couche dite UBM pour l'expression anglo- saxonne « Under Bump Metallization ») ; le matériau de scellement est constitué d'indium ; - et la fusion dudit matériau de scellement afin d'aboutir au scellement effectif des deux éléments entre eux intervient à une température supérieure à 250 0C sous atmosphère non oxydante, et avantageusement supérieure à 300 0C.According to the invention: the wettability zone of the element which has not received the sealing or welding material consists of a layer of gold; the surface of the wettability zone of the element positioned in contact with the sealing material is greater than the surface of the wettability zone on which said material is deposited (so-called UBM layer for the English expression "Under Bump Metallization""); the sealing material is indium; and the melting of said sealing material in order to effectively seal the two elements together takes place at a temperature greater than 250 ° C. under a non-oxidizing atmosphere, and advantageously greater than 300 ° C.

En d'autres termes, l'invention consiste à mettre en oeuvre ces quatre conditions cumulatives, ce qui permet d'utiliser comme matériau de scellement un cordon d'indium, dont, de manière connue, les coûts en matière première sont très nettement inférieurs à ceux de l'alliage or/étain, et ce typiquement d'un facteur 10.In other words, the invention consists in implementing these four cumulative conditions, which makes it possible to use a bead of indium as a sealing material, of which, in known manner, the raw material costs are very much lower those of the alloy gold / tin, and this typically by a factor of 10.

En outre, l'invention consiste à réaliser la fusion du matériau de scellement à une température très largement supérieure à celle de la fusion effectif de l'iridium. En effet, alors même que la température de fusion de l'iridium est de 156 0C, la température préconisée par l'invention pour réaliser le scellement est de 250 0C, voire même 300 0C, soit plus de 1,6 fois la température de fusion de l'indium.In addition, the invention consists in carrying out the melting of the sealing material at a temperature that is very much greater than that of the effective melting of the iridium. Indeed, even though the melting temperature of iridium is 156 ° C., the temperature recommended by the invention for sealing is 250 ° C., or even 300 ° C., ie more than 1.6 times. the melting temperature of indium.

Ce faisant, on s'affranchit de tout flux pour assurer le scellement, et donc des inconvénients qu'il génère, tout en mettant en oeuvre de l'indium, dont les autres propriétés sont appréciées pour réaliser un cordon de soudure efficace. En effet, l'iridium est un matériau tendre ou relativement ductile, et ses propriétés mécaniques permettent : de relaxer de manière drastique les contraintes post- soudure entre les éléments assemblés ; - de développer une fiabilité accrue par rapport aux soudures à base d'or, notamment en relation avec les cyclages thermiques auxquels sont confrontés les détecteurs mettant en œuvre une telle technologie, ces cyclages thermiques étant bien connus pour générer des cisaillements et donc des défaillances rapides, en raison des différences de coefficients de dilatation thermique entre les matériaux mis en œuvre.In doing so, it eliminates any flux to seal, and therefore the disadvantages it generates, while using indium, whose other properties are appreciated to achieve an effective weld seam. In fact, iridium is a soft or relatively ductile material, and its mechanical properties make it possible: to drastically relax the post-welding stresses between the assembled elements; to develop increased reliability compared with gold-based welds, particularly in relation to the thermal cycling encountered by detectors implementing such technology, these thermal cycling being well known to generate shears and thus rapid failures because of the differences in coefficients of thermal expansion between the materials used.

Selon une caractéristique avantageuse de l'invention, la surface de la zone de mouillabilité, et notamment sa largeur lorsqu'il s'agit d'un ruban, de l'élément positionné sur le matériau de scellement, est au moins une fois et demi supérieure à celle de la surface ou de la dimension correspondante de la zone de mouillabilité sous- jacente UBM.According to an advantageous characteristic of the invention, the surface of the wettability zone, and in particular its width when it is a ribbon, of the element positioned on the sealing material, is at least one and a half times greater than that of the corresponding surface or size of the underlying wettability zone UBM.

Selon une autre caractéristique avantageuse de l'invention, la température de refusion assurant le scellement effectif des deux éléments entre eux est supérieur à 300 0C.According to another advantageous characteristic of the invention, the reflow temperature ensuring the effective sealing of the two elements together is greater than 300 ° C.

BREVE DESCRIPTION DES DESSINSBRIEF DESCRIPTION OF THE DRAWINGS

La manière dont l'invention peut être réalisée et les avantages qui en découlent ressortiront mieux des exemples de réalisation qui suivent, donnés à titre indicatif et non limitatif à l'appui des figures annexées.The manner in which the invention may be implemented and the advantages which result therefrom will emerge more clearly from the following exemplary embodiments, given by way of non-limiting indication in support of the appended figures.

Comme déjà dit, les figures 1, 2 et 3 illustrent l'état antérieur de la technique, les figures 1 et 3 étant des représentations schématiques en section d'un substrat support et d'un capot, respectivement préalablement et postérieurement à l'élévation de température entraînant la refusion du cordon de scellement, la figure 2 étant une vue schématique de la face supérieure du substrat.As already mentioned, FIGS. 1, 2 and 3 illustrate the prior state of the art, FIGS. 1 and 3 being diagrammatic representations in section of a support substrate and a cover, respectively before and after elevation. temperature causing reflow of the sealing bead, Figure 2 being a schematic view of the upper face of the substrate.

La figure 4 est également une vue en section d'un détail de l'état antérieur de la technique.Figure 4 is also a sectional view of a detail of the prior art.

La figure 5 est une représentation schématique en section d'un détail du principe général de l'invention, dont la figure 6 est une vue schématique en section d'un capot préalablement à son scellement sur wafer. DESCRIPTION DÉTAILLÉE DE L'INVENTIONFigure 5 is a schematic representation in section of a detail of the general principle of the invention, Figure 6 is a schematic sectional view of a hood prior to its sealing on wafer. DETAILED DESCRIPTION OF THE INVENTION

La figure 4 est une vue en section visant à illustrer de manière plus détaillée l'état antérieur de la technique.Figure 4 is a sectional view to illustrate in more detail the prior art.

On peut ainsi observer que les surfaces Sl et S2 respectivement de la couche de métallisation 5 dite « UBM » réalisée sur le substrat 1 et de la zone de mouillabilité 5' réalisée sur la face inférieure du capot sont sensiblement de mêmes dimensions. Dans cet exemple, le cordon de soudure 8, ou de manière générale, le matériau de scellement est constitué or/étain AuSn.It can thus be observed that the surfaces S1 and S2 respectively of the so-called "UBM" metallization layer 5 formed on the substrate 1 and of the wettability zone 5 'made on the underside of the cap are substantially of the same dimensions. In this example, the weld bead 8, or in general, the sealing material is constituted gold / tin AuSn.

On s'est largement appesanti sur les inconvénients liés à la mise en œuvre d'un tel matériau de scellement, de sorte qu'il n'y a pas lieu ici d'y revenir plus en détail.The drawbacks involved in the use of such a sealing material have been largely limited, so that there is no need here to go back in more detail.

La figure 5 qui illustre l'invention, vise très clairement à indiquer les différentes caractéristiques qui lui sont propres.FIG. 5, which illustrates the invention, is very clearly intended to indicate the various characteristics that are specific to it.

Là encore, des zones de mouillabilité 10 et 11 sont mises en oeuvre. Dans la présente invention cependant, ces zones de mouillabilité sont constituées d'or, à l'exclusion de tout autre matériau. Ces couches d'or surmontent une couche faisant fonction de barrière et d'accroché, typiquement réalisée en alliage à base de titane, tel qu'en TiNi, TiW, TiPd, etc.Here again, zones of wettability 10 and 11 are used. In the present invention, however, these wettability zones are made of gold, to the exclusion of any other material. These gold layers surmount a layer acting as a barrier and hooked, typically made of titanium alloy, such as TiNi, TiW, TiPd, etc.

La réalisation des ces zones s'effectue de manière classique à l'aide des technologies parfaitement connues de l'homme du métier, de sorte qu'il n'y a pas lieu de les décrire ici plus en détail.The realization of these areas is carried out in a conventional manner using technologies well known to those skilled in the art, so that there is no need to describe them here in more detail.

Cependant, et selon l'une des caractéristiques de l'invention, les dimensions des zones de mouillabilité 10 et 11, respectivement recevant le cordon de soudure 8 et réalisée sur le capot 2 sont de géométrie différente.However, and according to one of the features of the invention, the dimensions of the wettability zones 10 and 11, respectively receiving the weld bead 8 and made on the cover 2 are of different geometry.

De plus, et selon une autre caractéristique de l'invention, le matériau de scellement est constitué d'indium à l'exclusion de tout autre matériau.In addition, and according to another characteristic of the invention, the sealing material is made of indium to the exclusion of any other material.

II est déposé par tout moyen tel que l'évaporation, la sérigraphie, l'électrolyse voire par la technique dite d'impression métallique ou d'emboutissage décrite dans la demande de brevet déposée le même jour que la présente demande. En résumé, cette technologie permet de réduire de manière importante les coûts associés au dépôt du matériau de scellement ou de soudure en supprimant toute étape de photo-masquage, tout en permettant l'utilisation des techniques de dépôt de soudure pleine tranche disponibles.It is deposited by any means such as evaporation, screen printing, electrolysis or even by the so-called metal printing or stamping technique described in the patent application filed on the same day as the present application. In summary, this technology significantly reduces the costs associated with deposition of sealant or solder material by eliminating any photo-masking step while allowing the use of available full-slice solder deposition techniques.

Après dépôt, la couche d'indium peut être remise en forme sous flux désoxydant. Elle est effectuée à une température supérieure à la température de fusion de l'indium, et donc supérieur à 156 0C, et avantageusement supérieure à 170 0C.After deposition, the indium layer can be reformed under a deoxidizing flow. It is carried out at a temperature above the melting point of indium, and therefore greater than 156 ° C., and advantageously greater than 170 ° C.

Cette couche d'indium est déposée sur la zone de métallisation 10 réalisée en or, en platine ou en un autre matériau noble, et de surface Sl, en l'espèce de largeur Sl.This indium layer is deposited on the metallization zone 10 made of gold, platinum or another noble material, and of surface Sl, in this case of width S1.

En revanche, la zone de mouillabilité 11, limitativement constituée d'or, réalisée sur la face inférieure du capot 2 présente une surface S2, et en l'espèce il s'agit d'un ruban d'une largeur S2 supérieure à la largeur Sl de la zone de métallisation 10 et typiquement plus d'une fois et demi supérieure à cette dernière.On the other hand, the wettability zone 11, limited to gold, made on the underside of the cap 2 has a surface S2, and in this case it is a ribbon with a width S2 greater than the width. Sl of the metallization zone 10 and typically more than one and a half times greater than the latter.

L'opération de scellement du capot 2 sur le substrat 1 s'effectue par refusion à une température supérieure à 250 0C. Elle est avantageusement supérieure à 3000C et elle est réalisée sous atmosphère non oxydante, typiquement sous vide ou sous gaz rare.The sealing operation of the cover 2 on the substrate 1 is carried out by reflow at a temperature greater than 250 ° C. It is advantageously greater than 300 ° C. and is carried out under a non-oxidizing atmosphere, typically under vacuum or under a rare gas .

Cette température élevée permet la formation continue de composés binaires or/indium intermédiaires, susceptibles de maintenir les matériaux de la zone de contact entre le cordon de soudure 8 ou les billes ou micro-billes de connexion 7 à l'état liquide lors du processus de soudure, et ainsi favoriser l'herméticité.This high temperature allows the continuous formation of intermediate gold / indium binary compounds, capable of maintaining the materials of the contact zone between the weld bead 8 or the connecting beads or microbeads 7 in the liquid state during the process of welding, and thus promote hermeticity.

Ce faisant, on dispose d'un scellement à faible prix de revient, à propriétés mécaniques améliorées, donc optimisant la fiabilité du détecteur en résultant, et permettant en outre de réaliser une herméticité collective par la mise en œuvre de la technologie de capotage auto-aligné, telle que décrite dans le document déjà cité FR 2 780 200.In doing so, it has a seal at low cost, with improved mechanical properties, thus optimizing the reliability of the resulting detector, and also allowing to achieve collective hermeticity by the implementation of the self-winding technology. aligned, as described in the document already cited FR 2 780 200.

On peut ainsi réaliser le capotage sous vide de bolomètre construit sur une plaque de silicium ainsi que le capotage sous azote de composants optoélectroniques. II est possible, à l'instar des enseignements du document précité, de réaliser simultanément la connexion par billes fusibles (mise en œuvre de la technologie dite « βipchip ») et la réalisation d'une herméticité périphérique au moyen d'un cordon de soudure.It is thus possible to realize the vacuum cowling of a bolometer built on a silicon wafer as well as the nitrogen shroud of optoelectronic components. It is possible, like the teachings of the aforementioned document, to simultaneously make the connection by fusible beads (implementation of the so-called "βipchip" technology) and the achievement of peripheral hermeticity by means of a weld seam .

Cette technologie permet donc de réaliser le capotage collectif et simultané de nombreux composants réalisés sur une seule plaque de semi-conducteur. Elle permet également la réalisation d'hybridation de modules à puces multiples, sans nécessiter de nettoyage de quelconque flux et sans limite de temps qui lui est intimement lié.This technology makes it possible to achieve collective and simultaneous rollover of many components made on a single semiconductor plate. It also allows hybridization of multi-chip modules to be carried out, without the need for cleaning of any flow and without a time limit which is intimately linked to it.

Ainsi, à titre exemplatif, l'invention permet la réalisation de matrices de détection infrarouge à détecteurs bolométriques sous vide sur plaque CMOS par report de capots transparent au rayonnement infrarouge, et éventuellement munis de couches getter. On peut également citer la réalisation de composants optiques hybrides sur banc silicium et capotes hermétiquement avec éventuellement la mise en œuvre d'optiques et/ou d'intraconnexions sur le capot. Enfin, on peut mentionner la réalisation de MEMS capotées collectivement sous vide sur plaque CMOS par report de capots éventuellement munis de couches getter. Thus, by way of example, the invention makes it possible to produce infrared detection matrices with bolometric detectors under vacuum on a CMOS plate by transferring caps that are transparent to infrared radiation, and possibly provided with getter layers. We can also mention the realization of hybrid optical components on a silicon bench and tight hoods with possibly the implementation of optical and / or intraconnections on the hood. Finally, it is possible to mention the production of MEMS collectively covered under vacuum on a CMOS plate by carrying caps possibly provided with getter layers.

Claims

REVENDICATIONS 1. Procédé de soudure ou de scellement de deux éléments entre eux positionnés au sein d'une enceinte au sein de laquelle règne le vide ou une atmosphère contrôlée, consistant : à réaliser sur les surfaces en regard des éléments à souder, une zone de mouillabilité 10, 11 ; à déposer sur l'une 10 de ces zones une quantité de matériau de scellement appropriée ; - à mettre en contact la zone de mouillabilité 11 de l'autre élément sur ledit matériau ainsi déposé ; à élever la température de l'enceinte au sein de laquelle sont positionnés les éléments à souder ou à sceller, jusqu'à atteindre au moins la température de fusion du matériau de scellement, pour assurer le scellement effectif des deux éléments entre eux par effet de refusion, caractérisé : en ce que la zone de mouillabilité 11 de l'élément n'ayant pas reçu le matériau de scellement est constituée d'une couche d'or ; en ce que la surface S2 de la zone de mouillabilité 11 de l'élément positionné au contact du matériau de scellement est supérieure à la surface1. A method of welding or sealing two elements between them positioned within a chamber within which the vacuum or controlled atmosphere prevails, consisting of: performing on the surfaces facing the elements to be welded, a wettability zone; 10, 11; depositing on one of these areas a quantity of suitable sealing material; bringing the wettability zone 11 of the other element into contact with said material thus deposited; to raise the temperature of the enclosure in which the elements to be welded or sealed are positioned, until at least the melting temperature of the sealing material is reached, in order to ensure the effective sealing of the two elements together by effect of remelting, characterized in that the wettability zone 11 of the element having not received the sealing material consists of a layer of gold; in that the surface S2 of the wettability zone 11 of the element positioned in contact with the sealing material is greater than the surface Sl de la zone de mouillabilité 10 sur laquelle est déposée ledit matériau ; en ce que le matériau de scellement est constitué d'indium ; et en ce que la fusion dudit matériau de scellement afin d'aboutir au scellement effectif des deux éléments entre eux intervient à une température supérieure à 250 0C sous atmosphère non oxydante.Sl of the wettability zone 10 on which said material is deposited; in that the sealing material consists of indium; and in that the melting of said sealing material in order to effectively seal the two elements together takes place at a temperature greater than 250 ° C. under a non-oxidizing atmosphere. 2. Procédé de soudure ou de scellement de deux éléments entre eux selon la revendication 1, caractérisé en ce que la surface S2 de la zone de mouillabilité 11, et notamment sa largeur lorsqu'il s'agit d'un ruban, de l'élément positionné sur le matériau de scellement, est au moins une fois et demi supérieure à la surface Sl ou à la dimension correspondante de la zone de mouillabilité sous- jacente 10 ayant reçu le matériau de scellement.2. A method of welding or sealing two elements together according to claim 1, characterized in that the surface S2 of the wettability zone 11, and in particular its width when it is a ribbon, the element positioned on the sealing material, is at least one and a half times greater than the surface S1 or the corresponding dimension of the underlying wettability zone 10 having received the sealing material. 3. Procédé de soudure ou de scellement de deux éléments entre eux selon l'une des revendications 1 et 2, caractérisé en ce que la température de refusion assurant le scellement effectif des deux éléments entre eux est supérieure à 300 0C. 3. A method of welding or sealing two elements together according to one of claims 1 and 2, characterized in that the reflow temperature ensuring effective sealing of the two elements together is greater than 300 0 C. 4. Procédé de soudure ou de scellement de deux éléments entre eux selon l'une des revendications 1 à 3, caractérisé en ce que l'un des éléments est constitué par un substrat semi-conducteur, et notamment un wafer ou une plaquette intégrant un ou plusieurs composants actifs.4. A method of welding or sealing two elements together according to one of claims 1 to 3, characterized in that one of the elements is constituted by a semiconductor substrate, and in particular a wafer or a wafer incorporating a or more active components. 5. Procédé de soudure ou de scellement de deux éléments entre eux selon l'une des revendications 1 à 4, caractérisé en ce que l'un des éléments est constitué par un capot. 5. A method of welding or sealing two elements together according to one of claims 1 to 4, characterized in that one of the elements is constituted by a cover.
EP06808248A 2005-08-30 2006-08-21 Method of sealing or welding two elements to one another Withdrawn EP1919822A1 (en)

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FR0552612A FR2890067B1 (en) 2005-08-30 2005-08-30 METHOD FOR SEALING OR SOLDING TWO ELEMENTS BETWEEN THEM
PCT/FR2006/050807 WO2007026093A1 (en) 2005-08-30 2006-08-21 Method of sealing or welding two elements to one another

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CN102371410A (en) * 2011-09-07 2012-03-14 中国航天科技集团公司第九研究院第七七一研究所 Process for making non-void high-reliability convex points in wafer by vacuum brazing
CN102923638B (en) * 2012-11-08 2016-02-03 姜利军 Level Hermetic Package assembly and method for packing
FR3008228B1 (en) 2013-07-02 2015-07-17 Commissariat Energie Atomique METHOD OF ASSEMBLING TWO ELECTRONIC COMPONENTS OF FLIP-CHIP TYPE BY UV-COATING, ASSEMBLY OBTAINED
JP6314690B2 (en) * 2014-06-26 2018-04-25 株式会社島津製作所 Vacuum container forming method

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US20080110013A1 (en) 2008-05-15
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WO2007026093A1 (en) 2007-03-08
FR2890067A1 (en) 2007-03-02

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