EP1839304A1 - Device for recording data, comprising a peripheral support membrane, and method for producing the same - Google Patents
Device for recording data, comprising a peripheral support membrane, and method for producing the sameInfo
- Publication number
- EP1839304A1 EP1839304A1 EP05850600A EP05850600A EP1839304A1 EP 1839304 A1 EP1839304 A1 EP 1839304A1 EP 05850600 A EP05850600 A EP 05850600A EP 05850600 A EP05850600 A EP 05850600A EP 1839304 A1 EP1839304 A1 EP 1839304A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- membrane
- sensitive area
- flexible
- fixing
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1418—Disposition or mounting of heads or record carriers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
Definitions
- Data recording device comprising a peripheral support membrane and method of manufacture
- the invention relates to a data recording device comprising a two-dimensional network of micro-tips, of nanometric dimensions, arranged facing a memory medium and means for elastic fastening of a sensitive area of the memory medium on an external frame. , allowing a displacement of said sensitive zone in its plane.
- the invention also relates to a method of manufacturing such a device.
- An actuator which may be electromechanical, allows a monolithic relative displacement of the entire micro-tip array with respect to the surface of a media constituting the memory medium.
- micro-tips are manufactured collectively, by techniques derived from those of microelectronics, and there is always a dispersion, due to the manufacture, of the height of the microtips. Although this dispersion is minimal, typically of the order of 100 nm, the longest microtip of a network supports more than the others on the memory medium.
- each microtip is cantilevered by one end of a cantilever, analogous to microtip arrays used in local probe microscopy.
- the flexibility of the cantilever then makes it possible to absorb the constraint of a support.
- the displacement of the memory medium may be of the order of 100 ⁇ m in each direction, it is then necessary to align millimeter-sized elements (memory medium and microtip network) with nanometric precision, while controlling the contact forces, which are of the order of a few nanoNewtons.
- the flatness and parallelism of the surfaces in rega rd imply tolerances respectively less than 50nm and a microradiant.
- this is made possible by the use of cantilevers and an expensive dynamic alignment process.
- the elastic fasteners represented in this article, of the complex articulated parallelogram type require numerous technological steps and are therefore expensive.
- Such a structure may not be sufficiently robust because of the significant mechanical stresses, which are exerted on the joints.
- Other solutions have been proposed by the Applicant, based on the use of a memory medium comprising a membrane whose flexibility makes it possible to compensate for dispersions in the height of the microtips.
- the microtips can then be formed directly, without cantilever, on the same base substrate, in which can also be integrated the addressing circuit and control. This monolithic manufacture of the addressing and control circuit and micro-tips reduces the cost of the device.
- WO-A-2004/032132 discloses a memory medium comprising a flexible membrane carried by a frame forming a plurality of cells, each cell being associated with at least one microtip.
- the memory medium can be a double membrane with nested frames.
- the memory medium comprises a deformable memory layer, for example constituted by a flexible layer of polymer, absorbing the dispersion of height of the micro-tips.
- the object of the invention is a data recording device which does not have these drawbacks and, more particularly, a less expensive device which makes it possible to ensure good contact between the microtips and the storage medium.
- the elastic fixing means consist of a flexible fastening membrane extending the sensitive zone at its periphery and allowing a displacement of the zone. sensitive perpendicular to its plane.
- the sensitive area of the memory medium preferably comprises a flexible membrane, extended at its periphery by the flexible attachment membrane.
- the invention also relates to a method of manufacturing such a data recording device and more particularly to a manufacturing method in which, the sensitive area of the memory medium comprising a flexible membrane, the flexible membrane and the fixing membrane are formed simultaneously in one piece.
- Figure 1 schematically illustrates, in top view, a particular embodiment of a memory medium of a device according to the invention.
- Figure 2 illustrates a device according to the invention, in section along A-A, with an associated actuator.
- FIGS. 3 and 4 illustrate, in section, two alternative embodiments of the device according to FIG. 2.
- FIG. 5 illustrates, in plan view, an alternative embodiment of the storage medium according to FIG. 1.
- FIGS. 6 and 7 schematically illustrate, in section, two variant embodiments of a data recording device according to FIG. in which the micro-tips are formed on a convex surface.
- the data recording device conventionally comprises a memory medium 1 cooperating with a network of microtips 2.
- the sensitive zone of the memory medium 1 is elastically fixed on an external frame 3, allowing a moving the sensitive area in its plane.
- the sensitive zone of the memory medium comprises, as in document WO-A-2004/032132, a flexible membrane 4 delimited by an internal frame 5, forming at least one cell.
- FIGS. 1 and 2 represent a single cell delimited at its periphery by the internal frame 5.
- the number of cells may be arbitrary, each cell preferably having a square, rectangular or hexagonal and the membrane can be a double diaphragm with nested frames.
- the sensitive zone of the memory support is elastically fixed to the outer frame 3 by a flexible attachment membrane 6 extending the sensitive zone, more particularly the flexible membrane 4, at its periphery.
- the membrane 4 is simply delimited by the internal frame 5 and the microtips 2 can be formed directly on a substrate 8.
- the membrane 4 is covered on the rear face of the memory medium, by a support zone 10.
- the sensitive zone is semi-rigid, which may require the maintenance of flexible support elements of each of the micro-tips on the substrate 8 , for example in the form of cantilevers 11.
- the membranes 4 and 6 may be formed simultaneously in one piece by any suitable method. It is thus possible to deposit, on a silicon wafer constituting the rear face of the storage medium (opposite its front face, a sensitive face intended to come into contact with the microtips), a plastic material, which is spread by centrifugal force.
- the plastics material used is preferably a polymer and, more particularly, a benzocyclobutene (BCB) based resin, such as CYCLOTENE TM.
- the outer frame 3 and the inner frame 5 or the support zone 10 can be obtained in a conventional manner (photolithography, dry etching or chemical etching). ).
- the frames 3 and 5 can be disengaged, in the silicon wafer, by chemical etching, anisotropic, from the back side of the storage medium, to the layer constituting the membranes 4 and 6. It is possibly possible to reverse the order of these steps (manufacture of membranes, memory layers and manufacture of frames) according to the process constraints related to the materials used.
- the memory layers 9 formed on the plastic layer may be of any known type, in particular of the type described in document FR-A-2856184.
- the fastening membrane 6 thus constitutes a kind of outer skin which serves as a support structure for the sensitive area of the memory medium comprising the flexible membrane 4, while allowing it freedom of movement on the vertically, to ensure the plating of the sensitive zone against microtips 2, and horizontally to allow an elastic displacement of the sensitive zone in its own plane, under the action of actuators 7 cooperating with the internal frame 5 or the support zone 10 (only one actuator 7 is shown in FIGS. 2 to 4).
- the dimensions of the peripheral fixing membrane 6 fix its stiffness. Its thickness is preferably of the order of a few microns and its width of the order of a few millimeters.
- the fixing membrane 6 can be lightened to increase its flexibility. It is in particular possible to reduce the surface of this membrane in an etching step, so as to obtain a perforated attachment membrane 6 or in the form of flexible strips, for example curved as in FIG.
- the etching of the fixing membrane 6 may be carried out by any conventional method and, in particular, by a plasma etching localized by means of a mask or a stencil.
- the micro-tips 2 are formed, with or without cantilevers on the front face of a planar substrate.
- deformations of the front face of the substrate are particularly likely to appear during the assembly of the device or due to thermal drifts. Such deformations, making the front face of the concave or saddle-shaped substrate, can lead to a lack of contact between the sensitive area of the memory medium 1 and some of the micro-tips 2.
- this problem is solved by the use of a microtip support substrate 8 having a convex front face 8a.
- the free ends of all the micro-tips 2 then come into contact with the sensitive area of the memory medium 1, the flexibility of which is sufficient to absorb at least a large part of the height variations of the micro-tips.
- the camber of the front face 8a of the substrate 8 remains small but sufficient to take account of the deformations likely to appear in the opposite direction during assembly of the device or due to thermal drifts.
- the radius of curvature of the convex surface can be between 1m and 5m. It is preferably of the order of two meters, which corresponds to a camber of the order of 10 nm over 100 ⁇ m.
- Such a camber of the front face of the substrate 8 may in particular be obtained by chemical mechanical polishing (CMP) of the front face 8a before formation of the micro-tips.
- CMP chemical mechanical polishing
- the camber of the front face 8a can also be obtained by applying a mechanical stress on the substrate 8.
- This mechanical stressing can, for example, be achieved by the deposition of a thin layer
- the thin layer is a layer of constrained silicon nitride or silica which is a few hundred nanometers thick, which can withstand without difficulty a stress of 1 GPa.
- the strained layer may in particular be obtained by ion beam sputtering (IBS). It may also have been previously constrained by another substrate, said original substrate, and reported on the substrate 8 to arch by any appropriate transfer technique, for example by gluing and thinning of the original substrate.
- the thickness of the substrate 8 is advantageously chosen to facilitate the cambering step.
- the substrate 8 may have a reduced thickness, of the order of 100 ⁇ m, for example.
- the micro-tips 2 can be formed directly, without cantilever, on the base substrate 8, in which the addressing and control circuit can also be integrated.
- the flexibility of the sensitive area of the memory medium 1 comprising the membrane 4 cooperates with the convex surface substrate to ensure contact between the microtips 2 and the sensitive zone and absorb most of the height variations. micro-tips.
- the combination of a memory medium according to FIGS. 1 to 5 with a substrate 8 whose front face 8a carrying the microtips 2 is convex makes it possible to guarantee a good redistribution of the assembly force between all the micrometers. tips.
- the external frame 3 may be secured to the substrate 8, while maintaining the freedom of movement of the sensitive zone in its plane.
- the outer frame 3 can in particular be fixed to the substrate 8 by conventional methods, such as gluing, thermofusion or any adhesion process between the walls.
- the assembly force then plates the storage medium, more particularly its sensitive area comprising the flexible membrane 4, on the microtip array 2.
- the elementary force exerted by each microtip 2 may be of the order of 0.1. nN at 1OnN. It depends on the chosen radius of curvature. By way of example, the assembly force can then be greater than 1 mN.
- the data recording device generally comprises means (in particular the actuators 7) allowing a relative displacement of the sensitive area of the storage medium 1 and microtips 2 in the substantially horizontal plane of the sensitive area. It may also comprise displacement means substantially perpendicular to the microtip support substrate 8 (vertically) to bring the microtips in contact with the sensitive zone.
- the respective dimensions of the various elements represented in FIG. 1 can be as follows: of the order of 15 mm for the side d of the storage medium 1, of the order of 9.5 mm for the c2 side of the membrane 4, of the order of 0.25 mm for the width 11 of the inner frame 5, - of the order of 0.5 mm for the width 12 of the outer frame 3 and of the order of 2 mm for the width 13 of the fixing membrane 6.
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Abstract
Description
Dispositif d'enregistrement de données comportant une membrane périphérique de support et procédé de fabricationData recording device comprising a peripheral support membrane and method of manufacture
Domaine technique de l'inventionTechnical field of the invention
L'invention concerne un dispositif d'enregistrement de données comportant un réseau bidimensionnel de micro-pointes, de dimensions nanométriques, disposé face à un support de mémoire et des moyens de fixation élastique d'une zone sensible du support de mémoire sur un cadre externe, autorisant un déplacement de ladite zone sensible dans son plan.The invention relates to a data recording device comprising a two-dimensional network of micro-tips, of nanometric dimensions, arranged facing a memory medium and means for elastic fastening of a sensitive area of the memory medium on an external frame. , allowing a displacement of said sensitive zone in its plane.
L'invention concerne également un procédé de fabrication d'un tel dispositif.The invention also relates to a method of manufacturing such a device.
État de la techniqueState of the art
Dans le domaine de l'enregistrement de données, de très grandes capacités de stockage ont récemment été obtenues en mettant en œuvre des réseaux de micro-pointes, dont l'apex est de dimension nanométrique. Un actionneur, qui peut être électromécanique, permet un déplacement relatif monolithique de l'ensemble du réseau de micro-pointes par rapport à la surface d'un média constituant le support de mémoire.In the field of data recording, very large storage capacities have recently been obtained by implementing networks of micro-points, whose apex is of nanometric dimension. An actuator, which may be electromechanical, allows a monolithic relative displacement of the entire micro-tip array with respect to the surface of a media constituting the memory medium.
Dans un tel dispositif d'enregistrement de données, avec effet de pointes, il est nécessaire de garantir un parfait contact de toutes les micro-pointes avec une zone sensible (zone d'enregistrement) du support de mémoire. Pour des raisons de complexité du système, il n'est pas envisageable de contrôler la position de chaque micro-pointe individuellement. Or, les micro-pointes sont fabriquées de manière collective, par des techniques dérivées de celles de la microélectronique, et il reste toujours une dispersion, due à la fabrication, de la hauteur des micro-pointes. Bien que cette dispersion soit minime, typiquement de l'ordre de 100nm, la plus longue des micro-pointes d'un réseau appuie plus que les autres sur le support de mémoire.In such a data recording device, with spike effect, it is necessary to ensure perfect contact of all microdots with a sensitive area (recording area) of the memory medium. For reasons of complexity of the system, it is not possible to control the position of each microtip individually. However, micro-tips are manufactured collectively, by techniques derived from those of microelectronics, and there is always a dispersion, due to the manufacture, of the height of the microtips. Although this dispersion is minimal, typically of the order of 100 nm, the longest microtip of a network supports more than the others on the memory medium.
Pour surmonter cette difficulté, chaque micro-pointe est portée en porte-à- faux par une extrémité d'un cantilever, de manière analogue aux réseaux de micro-pointes utilisés en microscopie à sonde locale. La souplesse du cantilever permet alors d'absorber la contrainte d'un appui.To overcome this difficulty, each microtip is cantilevered by one end of a cantilever, analogous to microtip arrays used in local probe microscopy. The flexibility of the cantilever then makes it possible to absorb the constraint of a support.
L'article ""Filling the Memory Access Gap : A Case for On-Chip Magnetic Storage" de Steven W. Schlosser et al., Technical Report CMU-CS-99-174, School of Computer Science, Carnegie Mellon University, de novembre 1999 décrit la coopération d'un réseau de micro-pointes à cantilevers avec un support de mémoire connecté par des fixations élastiques à un cadre solidaire du substrat supportant les micro-pointes. La zone sensible du support de mémoire peut ainsi être déplacée dans son propre plan par des actionneurs agissant dans deux directions perpendiculaires. À titre d'exemple, le déplacement du support de mémoire peut être de l'ordre de 100μm dans chaque direction. Il est alors nécessaire d'aligner des éléments de dimensions millimétriques (support de mémoire et réseau de micropointes) avec des précisions nanométriques, tout en maîtrisant les forces de contact, qui sont de l'ordre de quelques nanoNewtons. Or la planéité et Ie parallélisme des surfaces en regard impliquent des tolérances respectivement inférieures à 50nm et à un microradiant. Dans l'article précité, ceci est rendu possible par l'utilisation de cantilevers et d'un processus d'alignement dynamique coûteux. De plus, les fixations élastiques représentées dans cet article, du type à parallélogrammes articulés, complexes, nécessitent de nombreuses étapes technologiques et sont donc coûteuses. Une telle structure peut n'être pas suffisamment robuste en raison des contraintes mécaniques importantes, qui s'exercent au niveau des articulations. D'autres solutions ont été proposées par la demanderesse, basées sur l'utilisation d'un support de mémoire comportant une membrane dont Ia souplesse permet de compenser les dispersions dans la hauteur des micro- pointes. Les micro-pointes peuvent alors être formées directement, sans cantilever, sur un même substrat de base, dans lequel peut également être intégré le circuit d'adressage et de contrôle. Cette fabrication monolithique du circuit d'adressage et de contrôle et des micro-pointes permet de réduire le coût du dispositif.The article "" Filling the Memory Access Gap: A Case for On-Chip Magnetic Storage "by Steven W. Schlosser et al., Technical Report CMU-CS-99-174, Carnegie Mellon University School of Computer Science, November 1999 describes the cooperation of a cantilever micro-tip array with a memory carrier connected by elastic fasteners to a frame integral with the microtip-supporting substrate, whereby the sensitive area of the memory medium can be moved in its own right. plane by actuators acting in two perpendicular directions By way of example, the displacement of the memory medium may be of the order of 100 μm in each direction, it is then necessary to align millimeter-sized elements (memory medium and microtip network) with nanometric precision, while controlling the contact forces, which are of the order of a few nanoNewtons.But the flatness and parallelism of the surfaces in rega rd imply tolerances respectively less than 50nm and a microradiant. In the aforementioned article, this is made possible by the use of cantilevers and an expensive dynamic alignment process. Moreover, the elastic fasteners represented in this article, of the complex articulated parallelogram type, require numerous technological steps and are therefore expensive. Such a structure may not be sufficiently robust because of the significant mechanical stresses, which are exerted on the joints. Other solutions have been proposed by the Applicant, based on the use of a memory medium comprising a membrane whose flexibility makes it possible to compensate for dispersions in the height of the microtips. The microtips can then be formed directly, without cantilever, on the same base substrate, in which can also be integrated the addressing circuit and control. This monolithic manufacture of the addressing and control circuit and micro-tips reduces the cost of the device.
Ainsi, le document WO-A-2004/032132 décrit un support de mémoire comportant une membrane souple portée par un cadre formant une pluralité d'alvéoles, chaque alvéole étant associée à au moins une micro-pointe. Pour éliminer les effets de bord, qui réduisent le taux d'occupation, le support de mémoire peut être constitué par une membrane double à cadres imbriqués.Thus, WO-A-2004/032132 discloses a memory medium comprising a flexible membrane carried by a frame forming a plurality of cells, each cell being associated with at least one microtip. To eliminate edge effects, which reduce the occupancy rate, the memory medium can be a double membrane with nested frames.
Dans le document WO-A-2005/013270, le support de mémoire comporte une couche mémoire déformable, par exemple constituée par un couche souple en polymère, absorbant la dispersion de hauteur des micro-pointes.In the document WO-A-2005/013270, the memory medium comprises a deformable memory layer, for example constituted by a flexible layer of polymer, absorbing the dispersion of height of the micro-tips.
Bien que cette approche soit efficace pour absorber des dispersions locales de hauteur des micro-pointes, elle ne permet pas toujours d'assurer le contact de toutes les micro-pointes avec le support de mémoire, tout en maîtrisant les forces de contact. Ce type de problème se présente notamment lorsque la face avant du substrat portant les micro-pointes est partiellement concave, suite à sa déformation au cours de l'assemblage du dispositif ou en raison de dérives thermiques.Although this approach is effective in absorbing local micro-tip height dispersions, it does not always make it possible to ensure the contact of all micro-tips with the memory medium, while controlling the contact forces. This type of problem occurs in particular when the front face of the substrate carrying the microtips is partially concave, following its deformation during assembly of the device or due to thermal drifts.
Objet de l'invention L'invention a pour but un dispositif d'enregistrement de données ne présentant pas ces inconvénients et, plus particulièrement, un dispositif moins coûteux et permettant d'assurer un bon contact entre les micro-pointes et le support de mémoire.Object of the invention The object of the invention is a data recording device which does not have these drawbacks and, more particularly, a less expensive device which makes it possible to ensure good contact between the microtips and the storage medium.
Selon l'invention, ce but est atteint par un dispositif selon les revendications annexées, plus particulièrement par le fait que les moyens de fixation élastiques sont constitués par une membrane de fixation souple prolongeant la zone sensible à sa périphérie et autorisant un déplacement de la zone sensible perpendiculairement à son plan.According to the invention, this object is achieved by a device according to the appended claims, more particularly by the fact that the elastic fixing means consist of a flexible fastening membrane extending the sensitive zone at its periphery and allowing a displacement of the zone. sensitive perpendicular to its plane.
La zone sensible du support de mémoire comporte, de préférence, une membrane souple, prolongée à sa périphérie par la membrane de fixation souple.The sensitive area of the memory medium preferably comprises a flexible membrane, extended at its periphery by the flexible attachment membrane.
L'invention concerne également un procédé de fabrication d'un tel dispositif d'enregistrement de données et plus particulièrement un procédé de fabrication dans lequel, la zone sensible du support de mémoire comportant une membrane souple, la membrane souple et la membrane de fixation sont formées simultanément en une seule pièce.The invention also relates to a method of manufacturing such a data recording device and more particularly to a manufacturing method in which, the sensitive area of the memory medium comprising a flexible membrane, the flexible membrane and the fixing membrane are formed simultaneously in one piece.
Description sommaire des dessinsBrief description of the drawings
D'autres avantages et caractéristiques ressortiront plus clairement de la description qui va suivre de modes particuliers de réalisation de l'invention donnés à titre d'exemples non limitatifs et représentés aux dessins annexés, dans lesquels : La figure 1 illustre schématiquement, en vue de dessus, un mode de réalisation particulier d'un support de mémoire d'un dispositif selon l'invention.Other advantages and features will emerge more clearly from the following description of particular embodiments of the invention given by way of non-limiting example and represented in the accompanying drawings, in which: Figure 1 schematically illustrates, in top view, a particular embodiment of a memory medium of a device according to the invention.
La figure 2 illustre un dispositif selon l'invention, en coupe selon A-A, avec un actionneur associé.Figure 2 illustrates a device according to the invention, in section along A-A, with an associated actuator.
Les figures 3 et 4 illustrent, en coupe, deux variantes de réalisation du dispositif selon la figure 2.FIGS. 3 and 4 illustrate, in section, two alternative embodiments of the device according to FIG. 2.
La figure 5 illustre, en vue de dessus, une variante de réalisation du support de mémoire selon la figure 1. Les figures 6 et 7 illustrent schématiquement, en coupe, deux variantes de réalisation d'un dispositif d'enregistrement de données selon l'invention, dans lequel les micro-pointes sont formées sur une surface convexe.FIG. 5 illustrates, in plan view, an alternative embodiment of the storage medium according to FIG. 1. FIGS. 6 and 7 schematically illustrate, in section, two variant embodiments of a data recording device according to FIG. in which the micro-tips are formed on a convex surface.
Description de modes particuliers de réalisationDescription of particular embodiments
Le dispositif d'enregistrement de données comporte classiquement un support de mémoire 1 coopérant avec un réseau de micro-pointes 2. Comme dans l'article précité, la zone sensible du support de mémoire 1 est fixée élastiquement sur un cadre externe 3, autorisant un déplacement de la zone sensible dans son plan.The data recording device conventionally comprises a memory medium 1 cooperating with a network of microtips 2. As in the aforementioned article, the sensitive zone of the memory medium 1 is elastically fixed on an external frame 3, allowing a moving the sensitive area in its plane.
Sur les figures 1 à 3 et 5, la zone sensible du support de mémoire comporte, comme dans le document WO-A-2004/032132, une membrane souple 4 délimitée par un cadre interne 5, formant au moins une alvéole. Pour des raisons de clarté, les figures 1 et 2 représentent une seule alvéole, délimitée à sa périphérie par le cadre interne 5. En pratique le nombre d'alvéoles peut être quelconque, chaque alvéole ayant, de préférence, une forme carrée, rectangulaire ou hexagonale et la membrane peut être une membrane double à cadres imbriqués. Comme illustré aux figures 1 à 5, la zone sensible du support de mémoire est fixée élastiquement sur Ie cadre externe 3 par une membrane de fixation souple 6 prolongeant Ia zone sensible, plus particulièrement la membrane souple 4, à sa périphérie. Des couches mémoire 9, recouvrant la membrane souple 4 et, éventuellement, également la membrane de fixation 6 (figure 3) sur la face avant du support de mémoire (destinée à venir en contact avec les micro-pointes), complètent le support de mémoire. Sur les figures 1 à 3 et 5, la membrane 4 est simplement délimitée par le cadre interne 5 et les micro-pointes 2 peuvent être formées directement sur un substrat 8. Par contre, sur la figure 4, la membrane 4 est recouverte, sur la face arrière du support de mémoire, par une zone de support 10. Dans ce dernier cas, la zone sensible est semi-rigide, ce qui peut nécessiter le maintien d'éléments souples de support de chacune des micro-pointes sur le substrat 8, par exemple sous forme de cantilevers 11. Pour garantir un espacement minimum entre les couches mémoire 9 constituant le média et son circuit de lecture, il peut alors être souhaitable de former des plots d'espacement 12 sur le substrat 8.In FIGS. 1 to 3 and 5, the sensitive zone of the memory medium comprises, as in document WO-A-2004/032132, a flexible membrane 4 delimited by an internal frame 5, forming at least one cell. For the sake of clarity, FIGS. 1 and 2 represent a single cell delimited at its periphery by the internal frame 5. In practice, the number of cells may be arbitrary, each cell preferably having a square, rectangular or hexagonal and the membrane can be a double diaphragm with nested frames. As illustrated in FIGS. 1 to 5, the sensitive zone of the memory support is elastically fixed to the outer frame 3 by a flexible attachment membrane 6 extending the sensitive zone, more particularly the flexible membrane 4, at its periphery. Memory layers 9, covering the flexible membrane 4 and, optionally, also the fixing membrane 6 (FIG. 3) on the front face of the storage medium (intended to come into contact with the microtips), complete the storage medium. . In FIGS. 1 to 3 and 5, the membrane 4 is simply delimited by the internal frame 5 and the microtips 2 can be formed directly on a substrate 8. On the other hand, in FIG. 4, the membrane 4 is covered on the rear face of the memory medium, by a support zone 10. In the latter case, the sensitive zone is semi-rigid, which may require the maintenance of flexible support elements of each of the micro-tips on the substrate 8 , for example in the form of cantilevers 11. To guarantee a minimum spacing between the memory layers 9 constituting the medium and its reading circuit, it may then be desirable to form spacing pads 12 on the substrate 8.
Les membranes 4 et 6 peuvent être formées simultanément en une seule pièce par tout procédé approprié. Il est ainsi possible de déposer à la toumette, sur une tranche de silicium constituant la face arrière du support de mémoire (opposée à sa face avant, face sensible destinée à venir en contact avec les micro-pointes), une matière plastique, qui s'étale par force centrifuge. La matière plastique utilisée est de préférence un polymère et, plus particulièrement, une résine à base de benzocyclobutène (BCB), comme le CYCLOTENE™.The membranes 4 and 6 may be formed simultaneously in one piece by any suitable method. It is thus possible to deposit, on a silicon wafer constituting the rear face of the storage medium (opposite its front face, a sensitive face intended to come into contact with the microtips), a plastic material, which is spread by centrifugal force. The plastics material used is preferably a polymer and, more particularly, a benzocyclobutene (BCB) based resin, such as CYCLOTENE ™.
Après dépôt de Ia matière plastique constituant les membranes 4 et 6 et éventuellement des couches mémoire 9, Ie cadre externe 3 et le cadre interne 5 ou la zone de support 10 peuvent être obtenus de manière classique (photolithographie, gravure sèche ou chimique...). À titre d'exemple, les cadres 3 et 5 peuvent être dégagés, dans la tranche de silicium, par gravure chimique, anisotrope, à partir de la face arrière du support de mémoire, jusqu'à la couche constituant les membranes 4 et 6. Il est éventuellement possible d'inverser l'ordre de ces étapes (fabrication des membranes, des couches mémoire et fabrication des cadres) suivant les contraintes de procédé liés aux matériaux utilisés.After deposition of the plastic material constituting the membranes 4 and 6 and possibly memory layers 9, the outer frame 3 and the inner frame 5 or the support zone 10 can be obtained in a conventional manner (photolithography, dry etching or chemical etching). ). As for example, the frames 3 and 5 can be disengaged, in the silicon wafer, by chemical etching, anisotropic, from the back side of the storage medium, to the layer constituting the membranes 4 and 6. It is possibly possible to reverse the order of these steps (manufacture of membranes, memory layers and manufacture of frames) according to the process constraints related to the materials used.
Les couches mémoire 9 formées sur ia couche de matière plastique peuvent être de tout type connu, notamment du type décrit dans le document FR-A- 2856184.The memory layers 9 formed on the plastic layer may be of any known type, in particular of the type described in document FR-A-2856184.
Comme représenté aux figures 2 à 4, la membrane de fixation 6 constitue ainsi une sorte de peau extérieure qui sert de structure de support à la zone sensible du support de mémoire comportant la membrane souple 4, tout en lui autorisant une liberté de déplacement à la fois verticalement, pour assurer le plaquage de la zone sensible contre les micro-pointes 2, et horizontalement pour permettre un déplacement élastique de la zone sensible dans son propre plan, sous l'action d'actionneurs 7 coopérant avec Ie cadre interne 5 ou la zone de support 10 (un seul actionneur 7 est représenté sur les figures 2 à 4). Les dimensions de la membrane de fixation 6 périphérique fixent sa raideur. Son épaisseur est, de préférence de l'ordre de quelques microns et sa largeur de l'ordre de quelques millimètres.As represented in FIGS. 2 to 4, the fastening membrane 6 thus constitutes a kind of outer skin which serves as a support structure for the sensitive area of the memory medium comprising the flexible membrane 4, while allowing it freedom of movement on the vertically, to ensure the plating of the sensitive zone against microtips 2, and horizontally to allow an elastic displacement of the sensitive zone in its own plane, under the action of actuators 7 cooperating with the internal frame 5 or the support zone 10 (only one actuator 7 is shown in FIGS. 2 to 4). The dimensions of the peripheral fixing membrane 6 fix its stiffness. Its thickness is preferably of the order of a few microns and its width of the order of a few millimeters.
La membrane de fixation 6 peut être allégée pour augmenter sa souplesse. Il est notamment possible de réduire la surface de cette membrane dans une étape de gravure, de manière à obtenir une membrane de fixation 6 perforée ou sous forme de bandes flexibles, par exemple courbes comme sur la figureThe fixing membrane 6 can be lightened to increase its flexibility. It is in particular possible to reduce the surface of this membrane in an etching step, so as to obtain a perforated attachment membrane 6 or in the form of flexible strips, for example curved as in FIG.
5. La gravure de la membrane de fixation 6 peut être réalisée par tout procédé classique et, notamment, par une attaque plasma localisée au moyen d'un masque ou d'un pochoir. Dans les documents précités, les micro-pointes 2 sont formées, avec ou sans cantilevers sur la face avant d'un substrat plan. Or, des déformations de la face avant du substrat sont notamment susceptibles d'apparaître au cours de l'assemblage du dispositif ou en raison de dérives thermiques. De telles déformations, rendant la face avant du substrat concave ou en forme de selle de cheval, peuvent conduire à une absence de contact entre la zone sensible du support de mémoire 1 et certaines des micro-pointes 2.5. The etching of the fixing membrane 6 may be carried out by any conventional method and, in particular, by a plasma etching localized by means of a mask or a stencil. In the aforementioned documents, the micro-tips 2 are formed, with or without cantilevers on the front face of a planar substrate. However, deformations of the front face of the substrate are particularly likely to appear during the assembly of the device or due to thermal drifts. Such deformations, making the front face of the concave or saddle-shaped substrate, can lead to a lack of contact between the sensitive area of the memory medium 1 and some of the micro-tips 2.
Comme représenté aux figures 2 à 7, ce problème est résolu par l'utilisation d'un substrat 8 de support des micro-pointes 2 ayant une face avant 8a convexe. En effet, les extrémités libres de toutes les micro-pointes 2 viennent alors en contact avec la zone sensible du support de mémoire 1 , dont la souplesse est suffisante pour absorber au moins une grande partie des variations de hauteur des micro-pointes. La cambrure de la face avant 8a du substrat 8 reste faible mais suffisante pour tenir compte des déformations susceptibles d'apparaître en sens inverse au cours de l'assemblage du dispositif ou en raison de dérives thermiques. En pratique, le rayon de courbure de la surface convexe peut être compris entre 1m et 5m. Il est de préférence de l'ordre de deux mètres, ce qui correspond à une cambrure de l'ordre de 10nm sur 100μm.As shown in FIGS. 2 to 7, this problem is solved by the use of a microtip support substrate 8 having a convex front face 8a. Indeed, the free ends of all the micro-tips 2 then come into contact with the sensitive area of the memory medium 1, the flexibility of which is sufficient to absorb at least a large part of the height variations of the micro-tips. The camber of the front face 8a of the substrate 8 remains small but sufficient to take account of the deformations likely to appear in the opposite direction during assembly of the device or due to thermal drifts. In practice, the radius of curvature of the convex surface can be between 1m and 5m. It is preferably of the order of two meters, which corresponds to a camber of the order of 10 nm over 100 μm.
Une telle cambrure de la face avant du substrat 8 peut notamment être obtenue par polissage mécano-chimique (CMP, "Chemical Mechanical Polishing") de la face avant 8a avant formation des micro-pointes. Dans ce cas, comme illustré aux figures 2 à 4 et 6, la face arrière 8b du substrat 8 reste sensiblement plane.Such a camber of the front face of the substrate 8 may in particular be obtained by chemical mechanical polishing (CMP) of the front face 8a before formation of the micro-tips. In this case, as illustrated in FIGS. 2 to 4 and 6, the rear face 8b of the substrate 8 remains substantially flat.
La cambrure de la face avant 8a peut également être obtenue par application d'une contrainte mécanique sur le substrat 8. Cette mise sous contrainte mécanique peut, par exemple, être réalisée par le dépôt d'une couche minceThe camber of the front face 8a can also be obtained by applying a mechanical stress on the substrate 8. This mechanical stressing can, for example, be achieved by the deposition of a thin layer
(non représentée), contrainte en compression, sur la face avant 8a ou par dépôt d'une couche mince (non représentée), contrainte en tension, sur la face arrière 8b. Dans les deux cas, l'application d'une telle couche mince contrainte mécaniquement, en compression ou en tension, provoque une déformation, sensiblement parallèle, des faces avant 8a et arrière 8b du substrat 8, comme représenté à la figure 7. Dans un mode de réalisation particulier, la couche mince est une couche de nitrure de silicium contrainte ou de silice contrainte de quelques centaines de nanomètres d'épaisseur, qui peut supporter sans inconvénient une contrainte de 1 GPa.(not shown), stress in compression, on the front face 8a or by deposition of a thin layer (not shown), voltage stress, on the rear face 8b. In both cases, the application of such a thin layer mechanically constrained, in compression or in tension, causes a substantially parallel deformation of the front faces 8a and 8b of the substrate 8, as shown in FIG. In particular embodiment, the thin layer is a layer of constrained silicon nitride or silica which is a few hundred nanometers thick, which can withstand without difficulty a stress of 1 GPa.
La couche contrainte peut notamment être obtenue par dépôt par pulvérisation par faisceau d'ions (IBS : "Ion Beam Sputtering"). Elle peut également avoir été préalablement contrainte par un autre substrat, dit substrat d'origine, et reportée sur le substrat 8 à cambrer par toute technique de report appropriée, par exemple par collage et amincissement du substrat d'origine. L'épaisseur du substrat 8 est avantageusement choisie pour faciliter l'étape de cambrure. À titre d'exemple, le substrat 8 peut avoir une épaisseur réduite, de l'ordre de 100μm par exemple.The strained layer may in particular be obtained by ion beam sputtering (IBS). It may also have been previously constrained by another substrate, said original substrate, and reported on the substrate 8 to arch by any appropriate transfer technique, for example by gluing and thinning of the original substrate. The thickness of the substrate 8 is advantageously chosen to facilitate the cambering step. By way of example, the substrate 8 may have a reduced thickness, of the order of 100 μm, for example.
Lorsque la zone sensible du support de mémoire est suffisamment souple, les micro-pointes 2 peuvent être formées directement, sans cantilever, sur le substrat 8 de base, dans lequel peut également être intégré le circuit d'adressage et de contrôle.When the sensitive area of the memory medium is sufficiently flexible, the micro-tips 2 can be formed directly, without cantilever, on the base substrate 8, in which the addressing and control circuit can also be integrated.
Comme indiqué ci-dessus, la souplesse de la zone sensible du support de mémoire 1 comportant la membrane 4 coopère avec le substrat à surface convexe pour assurer le contact entre les micro-pointes 2 et la zone sensible et absorber la plupart des variations de hauteur des micro-pointes. La combinaison d'un support de mémoire selon les figures 1 à 5 avec un substrat 8 dont la face avant 8a, portant les micro-pointes 2, est convexe permet de garantir une bonne redistribution de la force d'assemblage entre toutes les micro-pointes. En effet, lors de l'assemblage, le cadre externe 3 peut être solidarisé avec le substrat 8, tout en conservant la liberté de déplacement de la zone sensible dans son plan. Le cadre externe 3 peut notamment être fixé au substrat 8 par des procédés classiques, comme le collage, la thermofusion ou tout procédé d'adhérence entre les parois. La force d'assemblage plaque alors le support de mémoire, plus particulièrement sa zone sensible comportant Ia membrane souple 4, sur le réseau de micro-pointes 2. La force élémentaire exercée par chaque micropointe 2 peut être de l'ordre de 0,1 nN à 1OnN. Elle est fonction du rayon de courbure choisi. À titre d'exemple, la force d'assemblage peut alors être supérieure à 1mN.As indicated above, the flexibility of the sensitive area of the memory medium 1 comprising the membrane 4 cooperates with the convex surface substrate to ensure contact between the microtips 2 and the sensitive zone and absorb most of the height variations. micro-tips. The combination of a memory medium according to FIGS. 1 to 5 with a substrate 8 whose front face 8a carrying the microtips 2 is convex makes it possible to guarantee a good redistribution of the assembly force between all the micrometers. tips. Indeed, during assembly, the external frame 3 may be secured to the substrate 8, while maintaining the freedom of movement of the sensitive zone in its plane. The outer frame 3 can in particular be fixed to the substrate 8 by conventional methods, such as gluing, thermofusion or any adhesion process between the walls. The assembly force then plates the storage medium, more particularly its sensitive area comprising the flexible membrane 4, on the microtip array 2. The elementary force exerted by each microtip 2 may be of the order of 0.1. nN at 1OnN. It depends on the chosen radius of curvature. By way of example, the assembly force can then be greater than 1 mN.
Le dispositif d'enregistrement de données comporte généralement des moyens (notamment les actionneurs 7) permettant un déplacement relatif de la zone sensible du support de mémoire 1 et des micro-pointes 2 dans le plan, sensiblement horizontal, de la zone sensible. II peut également comporter des moyens de déplacement sensiblement perpendiculairement au substrat 8 de support des micro-pointes (soit verticalement) pour amener les micro-pointes en contact avec Ia zone sensible.The data recording device generally comprises means (in particular the actuators 7) allowing a relative displacement of the sensitive area of the storage medium 1 and microtips 2 in the substantially horizontal plane of the sensitive area. It may also comprise displacement means substantially perpendicular to the microtip support substrate 8 (vertically) to bring the microtips in contact with the sensitive zone.
À titre d'exemple, les dimensions respectives des différents éléments représentés sur la figure 1 peuvent être les suivantes : de l'ordre de 15mm pour le côté d du support de mémoire 1 , de l'ordre de 9,5mm pour le côté c2 de la membrane 4, de l'ordre de 0,25mm pour la largeur 11 du cadre interne 5, - de l'ordre de 0,5mm pour la largeur 12 du cadre externe 3 et de l'ordre de 2mm pour Ia largeur 13 de la membrane de fixation 6. By way of example, the respective dimensions of the various elements represented in FIG. 1 can be as follows: of the order of 15 mm for the side d of the storage medium 1, of the order of 9.5 mm for the c2 side of the membrane 4, of the order of 0.25 mm for the width 11 of the inner frame 5, - of the order of 0.5 mm for the width 12 of the outer frame 3 and of the order of 2 mm for the width 13 of the fixing membrane 6.
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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FR0500471A FR2880979B1 (en) | 2005-01-17 | 2005-01-17 | DATA RECORDING DEVICE HAVING A PERIPHERAL SUPPORT MEMBRANE AND METHOD FOR MANUFACTURING THE SAME |
PCT/FR2005/003261 WO2006075066A1 (en) | 2005-01-17 | 2005-12-22 | Device for recording data, comprising a peripheral support membrane, and method for producing the same |
Publications (1)
Publication Number | Publication Date |
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EP1839304A1 true EP1839304A1 (en) | 2007-10-03 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP05850600A Withdrawn EP1839304A1 (en) | 2005-01-17 | 2005-12-22 | Device for recording data, comprising a peripheral support membrane, and method for producing the same |
Country Status (5)
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US (1) | US7898931B2 (en) |
EP (1) | EP1839304A1 (en) |
JP (1) | JP4898705B2 (en) |
FR (1) | FR2880979B1 (en) |
WO (1) | WO2006075066A1 (en) |
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US9221678B2 (en) * | 2008-10-06 | 2015-12-29 | University Of Florida Research Foundation, Inc. | Active fixturing for micro/mesoscale, machine tool systems |
Family Cites Families (12)
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US5216631A (en) * | 1990-11-02 | 1993-06-01 | Sliwa Jr John W | Microvibratory memory device |
JP4095125B2 (en) * | 1996-07-25 | 2008-06-04 | Tdk株式会社 | Memory device |
FR2757992B1 (en) * | 1996-12-26 | 1999-01-29 | Commissariat Energie Atomique | INFORMATION RECORDING MEDIUM, DEVICE FOR READING THE MEDIA, AND METHODS OF IMPLEMENTING THE DEVICE |
EP0998016B1 (en) * | 1998-10-30 | 2007-08-29 | International Business Machines Corporation | Magnetic scanning or positioning system with at least two degrees of freedom |
EP1168334B1 (en) * | 2000-06-26 | 2006-03-08 | Samsung Electronics Co. Ltd. | Electromagnetic X-Y stage driver for nano data storage system and method for fabricating coils of the same |
JP2002092946A (en) * | 2000-09-20 | 2002-03-29 | Toshiba Corp | Optical disk baseboard and its production method |
US6522566B2 (en) * | 2000-12-01 | 2003-02-18 | Hewlett-Packard Company | System modules with atomic resolution storage memory |
US7018572B2 (en) * | 2001-06-11 | 2006-03-28 | General Electric Company | Method for producing data storage media |
FR2845513B1 (en) * | 2002-10-03 | 2006-08-11 | Commissariat Energie Atomique | DATA RECORDING DEVICE HAVING MEMBRANE MEMORY MEMORY MEDIUM |
FR2856184B1 (en) | 2003-06-13 | 2008-04-11 | Commissariat Energie Atomique | DATA RECORDING DEVICE COMPRISING MICROPOINT AND RECORDING MEDIUM |
JP2005004921A (en) * | 2003-06-13 | 2005-01-06 | Alps Electric Co Ltd | Highly precise positioning device |
WO2005013270A1 (en) | 2003-07-03 | 2005-02-10 | Commissariat A L'energie Atomique | Method for recording data and device for carrying out the same comprising a deformable memory support |
-
2005
- 2005-01-17 FR FR0500471A patent/FR2880979B1/en not_active Expired - Fee Related
- 2005-12-22 WO PCT/FR2005/003261 patent/WO2006075066A1/en active Application Filing
- 2005-12-22 EP EP05850600A patent/EP1839304A1/en not_active Withdrawn
- 2005-12-22 US US11/794,007 patent/US7898931B2/en not_active Expired - Fee Related
- 2005-12-22 JP JP2007550812A patent/JP4898705B2/en not_active Expired - Fee Related
Non-Patent Citations (1)
Title |
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See references of WO2006075066A1 * |
Also Published As
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FR2880979B1 (en) | 2007-03-16 |
US20080095021A1 (en) | 2008-04-24 |
US7898931B2 (en) | 2011-03-01 |
JP2008527606A (en) | 2008-07-24 |
FR2880979A1 (en) | 2006-07-21 |
WO2006075066A1 (en) | 2006-07-20 |
JP4898705B2 (en) | 2012-03-21 |
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