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EP1814366A1 - Light-emitting semiconductor device with open-bypass function - Google Patents

Light-emitting semiconductor device with open-bypass function Download PDF

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Publication number
EP1814366A1
EP1814366A1 EP06007984A EP06007984A EP1814366A1 EP 1814366 A1 EP1814366 A1 EP 1814366A1 EP 06007984 A EP06007984 A EP 06007984A EP 06007984 A EP06007984 A EP 06007984A EP 1814366 A1 EP1814366 A1 EP 1814366A1
Authority
EP
European Patent Office
Prior art keywords
gate
light
switch
emitting semiconductor
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06007984A
Other languages
German (de)
French (fr)
Inventor
Hsing-Fu Liu
Rong-Tsung Lin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Macroblock Inc
Original Assignee
Macroblock Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macroblock Inc filed Critical Macroblock Inc
Publication of EP1814366A1 publication Critical patent/EP1814366A1/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/50—Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/40—Details of LED load circuits
    • H05B45/44—Details of LED load circuits with an active control inside an LED matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • This invention relates to a light-emitting semiconductor device with open-bypass function.
  • open or short circuit may cause the LED unable to be lit.
  • the open circuit results in all LEDs serially connected to this circuit ineffective; and the short circuit makes one or more LEDs being "omitted”.
  • this invention provides a bypass switch in the LED circuit.
  • the light-emitting semiconductor device with open-bypass function comprises a first terminal, a second terminal, at least one LED unit and a bypass switch.
  • Each LED unit composed of one or more LED die has a first electrode and a second electrode respectively connected to the first terminal and the second terminal.
  • the bypass switch also has a first electrode and a second electrode respectively connected to the first terminal and the second terminal of the light-emitting semiconductor device.
  • a current applied to the first and the second terminals can be conducted through the LED unit for lighting it, and the switch is in an "Off" state without current flowing through. If the circuit of the LEDs unit between two terminals is open and the current can not be conducted through, the bypass switch will be in an "On" state for conducting the current.
  • the first and the second terminals of the light-emitting semiconductor device can be always electrically conductible.
  • This invention also comprises a series or parallel circuit comprising several devices and a current source.
  • FIG 1 (a) shows a light-emitting semiconductor device 1 comprising two terminals defined as a first terminal 2 and a second terminal 3, an LED unit 4 and a switch 7 for bypassing.
  • the LED unit 4 includes several LED dice 10 as shown in FIG. 2, and has a first electrode 5 and a second electrode 6 respectively connected to the first terminal 2 and the second terminal 3.
  • the circuit involving the LED unit 4 is electrically connected well and the LED dice can be lit by applying a current to the terminals 2 and 3. However, if the circuit is open, the LED unit 4 can't be lit.
  • the switch 7 is made with an integrated circuit and also has a first electrode 8 and a second electrode 9 respectively connected to the terminals 2 and 3.
  • the switch 7 includes a voltage detection circuit 11 and a switch circuit 12, as shown in FIG. 3.
  • the switch 7 is electrically unconductible in an "Off” state, but conductible in an "On” state when triggered by a first signal received from the electrodes 8 and 9.
  • This first signal is a voltage equal to or higher than a predetermined value and generated when the circuit involving the LED unit 4 is open.
  • FIG 1(b) shows the LED unit 4 connected to the switch 7 through a common contact and thus controlled by the switch 7.
  • the voltage detection circuit 1 has an anode, a cathode and a gate, wherein the anode and the cathode are respectively connected to the electrodes 8 and 9.
  • the switch circuit 12 also has an anode, a cathode and a gate, wherein the anode and the cathode are also respectively connected to the electrodes 8 and 9.
  • the gates of the circuits 11 and 12 are connected to each other. By detecting voltage of the circuit, the circuit 11 can generate a second signal to drive the gate of the switch circuit 12 through the gate of the voltage detection circuit 11. Then the switch circuit 12 enters into the "On" state.
  • the switch circuit can be designed as follows:
  • the bipolar junction transistor has an emitter, a base and a collector; the MOSFET has a source, a gate and a drain. The emitter and the source are respectively connected to the anode (or the cathode) and the cathode (or the anode) of the switch circuit. The base is connected to the drain. The collector is connected to the gate.
  • the light-emitting semiconductor device 1 is conducted as follows:
  • FIG 6 shows the electrical connection of the device.
  • the electrode 5 of the LED unit 4 and the electrode 8 of the switch 7 are commonly connected to the first terminal 2 of the device 1.
  • the electrode 6 of the LED unit 4 and the electrode 9 of the switch 7 are commonly connected to the second terminal 3 of the device 1.
  • the terminals of the light-emitting semiconductor device can be attached to a substrate by wire bonding and surface mount technology.
  • FIG 7 shows a series circuit.
  • the terminal 3 of the device 1 is connected to the terminal 2' of the device 1'; and the terminal 2 of the device 1 and the terminal 3' of the device 1' are individually connected to a current source 13.
  • FIG 8 shows a parallel circuit.
  • the terminal 2 of the device 1 and the terminal 2' of the device 1' are commonly connected to a current source; and the terminal 3 of the device 1 and the terminal 3' of the device 1' are commonly connected to the current source. That is, the devices and the current source can form a series or parallel circuit always conductible by providing the bypass switch.

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Abstract

This invention discloses a light-emitting semiconductor device with open-bypass function, which comprises two terminals providing a current, at least one LED unit and a bypass switch. Electrodes of the LED unit and the bypass switch are properly connected to the terminals, so that the bypass switch will provide an alternative path for current flowing through if the circuit of the LEDs unit between two terminals is open.

Description

    BACKGROUND OF THE INVENTION 1. Field of the Invention
  • This invention relates to a light-emitting semiconductor device with open-bypass function.
    • 2. Related Prior Arts
  • For serial or parallel LEDs, open or short circuit may cause the LED unable to be lit. The open circuit results in all LEDs serially connected to this circuit ineffective; and the short circuit makes one or more LEDs being "omitted".
  • Therefore, this invention provides a bypass switch in the LED circuit.
    • SUMMARY OF THE INVENTION
  • The light-emitting semiconductor device with open-bypass function comprises a first terminal, a second terminal, at least one LED unit and a bypass switch. Each LED unit composed of one or more LED die has a first electrode and a second electrode respectively connected to the first terminal and the second terminal. The bypass switch also has a first electrode and a second electrode respectively connected to the first terminal and the second terminal of the light-emitting semiconductor device.
  • In a normal condition, a current applied to the first and the second terminals can be conducted through the LED unit for lighting it, and the switch is in an "Off" state without current flowing through. If the circuit of the LEDs unit between two terminals is open and the current can not be conducted through, the bypass switch will be in an "On" state for conducting the current.
  • Accordingly, the first and the second terminals of the light-emitting semiconductor device can be always electrically conductible.
  • This invention also comprises a series or parallel circuit comprising several devices and a current source.
    • BRIEF DESCRIPTION OF THE DRAWINGS
    • FIG. 1 shows the light-emitting semiconductor device of this invention
    • FIGs. 2 and 3 respectively show the LED unit and the bypass switch.
    • FIGs. 4and 5 respectively show the ways current flowing when the switch is in the "On" and "Off" states.
    • FIG 6 shows the electrical connection of this invention
    • FIGs. 7 and 8 respectively show the series and the parallel circuits.
    DETAILED DESCRIPTION OF THE PREFFERED EMBODIMENTS
  • FIG 1 (a) shows a light-emitting semiconductor device 1 comprising two terminals defined as a first terminal 2 and a second terminal 3, an LED unit 4 and a switch 7 for bypassing. The LED unit 4 includes several LED dice 10 as shown in FIG. 2, and has a first electrode 5 and a second electrode 6 respectively connected to the first terminal 2 and the second terminal 3. In a normal condition, the circuit involving the LED unit 4 is electrically connected well and the LED dice can be lit by applying a current to the terminals 2 and 3. However, if the circuit is open, the LED unit 4 can't be lit.
  • The switch 7 is made with an integrated circuit and also has a first electrode 8 and a second electrode 9 respectively connected to the terminals 2 and 3. The switch 7 includes a voltage detection circuit 11 and a switch circuit 12, as shown in FIG. 3. The switch 7 is electrically unconductible in an "Off" state, but conductible in an "On" state when triggered by a first signal received from the electrodes 8 and 9. This first signal is a voltage equal to or higher than a predetermined value and generated when the circuit involving the LED unit 4 is open.
  • FIG 1(b) shows the LED unit 4 connected to the switch 7 through a common contact and thus controlled by the switch 7.
  • The voltage detection circuit 1 has an anode, a cathode and a gate, wherein the anode and the cathode are respectively connected to the electrodes 8 and 9. The switch circuit 12 also has an anode, a cathode and a gate, wherein the anode and the cathode are also respectively connected to the electrodes 8 and 9. The gates of the circuits 11 and 12 are connected to each other. By detecting voltage of the circuit, the circuit 11 can generate a second signal to drive the gate of the switch circuit 12 through the gate of the voltage detection circuit 11. Then the switch circuit 12 enters into the "On" state.
  • In this invention, the switch circuit can be designed as follows:
    1. (1) One PNPN thyristor having a P anode and an N cathode respectively connected to the anode and cathode of the switch circuit.
    2. (2) Two bipolar junction transistors
      The first bipolar junction transistor has a first emitter, a first base and a first collector; the second bipolar junction transistor has a second emitter, a second base and a second collector. The first emitter and the second emitter are respectively connected to the anode and the cathode of the switch circuit. The first base is connected to the second collector. The first collector is connected to the second base.
    3. (3) Two MOSFETs
      The first MOSFET has a first source, a first gate and a first drain; the second MOSFET has a second source, a second gate and a second drain. The first source and the second source are respectively connected to the anode and the cathode of the switch circuit. The first gate is connected to the second drain. The first drain is connected to the second gate.
    4. (4) One bipolar junction transistor and one MOSFET
  • The bipolar junction transistor has an emitter, a base and a collector; the MOSFET has a source, a gate and a drain. The emitter and the source are respectively connected to the anode (or the cathode) and the cathode (or the anode) of the switch circuit. The base is connected to the drain. The collector is connected to the gate.
  • The light-emitting semiconductor device 1 is conducted as follows:
    1. (1) If electrical connection of the LED unit 4 is abnormally open, the current can not be conducted through the LED unit 4; and the switch 7 will be in the "On" state and enable the current to flow through, as shown in FIG 4.
    2. (2) If electrical connection of the LED unit 4 is normal, a current can be conducted through the LED unit 4 for lighting it; and the switch 7 is in the "Off" state without current flowing through, as shown in FIG 5.
  • FIG 6 shows the electrical connection of the device. The electrode 5 of the LED unit 4 and the electrode 8 of the switch 7 are commonly connected to the first terminal 2 of the device 1. The electrode 6 of the LED unit 4 and the electrode 9 of the switch 7 are commonly connected to the second terminal 3 of the device 1.
  • The terminals of the light-emitting semiconductor device can be attached to a substrate by wire bonding and surface mount technology.
  • FIG 7 shows a series circuit. The terminal 3 of the device 1 is connected to the terminal 2' of the device 1'; and the terminal 2 of the device 1 and the terminal 3' of the device 1' are individually connected to a current source 13. FIG 8 shows a parallel circuit. The terminal 2 of the device 1 and the terminal 2' of the device 1' are commonly connected to a current source; and the terminal 3 of the device 1 and the terminal 3' of the device 1' are commonly connected to the current source. That is, the devices and the current source can form a series or parallel circuit always conductible by providing the bypass switch.

Claims (9)

  1. A light-emitting semiconductor device with open-bypass function, comprising:
    a first terminal;
    a second terminal;
    at least one LED unit each comprising one or more LED die, a first electrode and a second electrode respectively connected to the first and the second terminals; and
    a bypass switch comprising a first electrode and a second electrode respectively connected to the first and the second terminals;
    wherein
    the bypass switch will be in an "Off' state without current flowing through if the LED unit can be lit by applying a current to the first and second terminals; or
    the bypass switch will be in an "On" state for conducting the current if the LED unit is in an open circuit.
  2. The light-emitting semiconductor device of claim 1, wherein the first and the second terminals are attached to a substrate by wire bonding and surface mount technology.
  3. The light-emitting semiconductor device of claim 1, wherein the LED unit will generate a first signal delivered to the first and the second electrodes of the bypass switch as being in an open circuit; and
    the bypass switch will be in the "Off" state if the first signal is lower than a predetermined voltage; or
    the bypass switch will be triggered to enter into the "On" state if the first signal is equal to or higher than the predetermined voltage.
  4. The light-emitting semiconductor device of claim 1, wherein the bypass switch is formed as an integrated circuit and comprises:
    a voltage detection circuit with an anode, a cathode and a gate, wherein the anode and the cathode are respectively connected to the first and the second electrodes of the bypass switch; and
    a switch circuit with an anode, a cathode and a gate, wherein the anode and the cathode are respectively connected to the first and the second electrodes of the bypass switch, and the gate is connected to the gate of the voltage detection circuit;
    wherein the voltage detection circuit can generate a second signal according to the detected voltage and the second signal will drive the gate of the switch circuit through the gate of the voltage detection circuit and therefore turn on the switch circuit into the "On" state.
  5. The light-emitting semiconductor device of claim 4, wherein the switch circuit comprises a PNPN thyristor with a P anode and an N cathode respectively connected to the anode and the cathode of the switch circuit.
  6. The light-emitting semiconductor device of claim 4, wherein the switch circuit comprises a first bipolar junction transistor with a first emitter, a first base and a first collector and a second bipolar junction transistor with a second emitter, a second base and a second collector; wherein:
    the first emitter and the second emitter are respectively connected to the anode and the cathode of the switch circuit;
    the first base is connected to the second collector; and
    the first collector is connected to the second base.
  7. The light-emitting semiconductor device of claim 4, wherein the switch circuit comprises a first MOSFET with a first source, a first gate and a first drain and a second MOSFET with a second source, a second gate and a second drain; wherein:
    the first source and the second source are respectively connected to the anode and the cathode of the switch circuit;
    the first gate is connected to the second drain; and
    the first drain is connected to the second gate.
  8. The light-emitting semiconductor device of claim 4, wherein the switch circuit comprises a bipolar junction transistor with an emitter, a base and a collector and a MOSFET with a source, a gate and a drain; wherein:
    the emitter or the source is connected to the anode or the cathode of the switch circuit;
    the base is connected to the drain;
    the collector is connected to the gate.
  9. A light-emitting semiconductor apparatus, comprising a plurality of the light-emitting semiconductor devices of claim 1 and a current source to construct a series or parallel circuit.
EP06007984A 2006-01-18 2006-04-18 Light-emitting semiconductor device with open-bypass function Withdrawn EP1814366A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2006100015271A CN100521200C (en) 2006-01-18 2006-01-18 Light-emitting semiconductor component with bypass conduction switch

Publications (1)

Publication Number Publication Date
EP1814366A1 true EP1814366A1 (en) 2007-08-01

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EP06007984A Withdrawn EP1814366A1 (en) 2006-01-18 2006-04-18 Light-emitting semiconductor device with open-bypass function

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CN (1) CN100521200C (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009138907A3 (en) * 2008-05-13 2010-01-07 Nxp B.V. Detection of failures within lighting devices
DE102012106272A1 (en) * 2012-07-12 2014-01-16 Osram Opto Semiconductors Gmbh Arrangement of optoelectronic component e.g. LED, has coupling element whose electrical resistance is higher and lower than that of optoelectronic component, so that heat is applied to coupling element by heating resistor
CN110798935A (en) * 2019-11-19 2020-02-14 深圳欧创芯半导体有限公司 LED lamp string control method, device and system and terminal equipment

Families Citing this family (4)

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JP5894982B2 (en) * 2010-07-09 2016-03-30 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Management circuit for organic light-emitting diodes
JP2012053387A (en) * 2010-09-03 2012-03-15 Mitsumi Electric Co Ltd Backlight device, display device equipped with the backlight device, and illuminating device
CN112820238B (en) * 2019-10-30 2022-07-01 群创光电股份有限公司 Display device
CN112967665B (en) * 2021-02-20 2023-08-15 厦门天马微电子有限公司 Light emitting element control circuit, display panel and display device

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US20040248332A1 (en) * 2003-06-03 2004-12-09 Joon Ho Yoon Method of manufacturing light-emitting diode device
US20050057179A1 (en) * 2003-08-27 2005-03-17 Osram Sylvania Inc. Driver circuit for LED vehicle lamp
EP1589519A2 (en) * 2004-04-20 2005-10-26 Sony Corporation Constant current driving device, backlight light source device, and color liquid crystal display device

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US6323598B1 (en) * 2000-09-29 2001-11-27 Aerospace Optics, Inc. Enhanced trim resolution voltage-controlled dimming led driver
CN1190070C (en) * 2001-04-26 2005-02-16 力捷电脑股份有限公司 Device and method for zeroing and reading in complementary metal oxide semiconductor sensor
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Publication number Priority date Publication date Assignee Title
JPS6318967A (en) * 1986-07-11 1988-01-26 Toshiba Corp Controller for cycloconverter
JPH11178243A (en) * 1997-12-16 1999-07-02 Mitsubishi Electric Corp Uninterruptible power supply unit
US20020043943A1 (en) * 2000-10-10 2002-04-18 Menzer Randy L. LED array primary display light sources employing dynamically switchable bypass circuitry
US20040248332A1 (en) * 2003-06-03 2004-12-09 Joon Ho Yoon Method of manufacturing light-emitting diode device
US20050057179A1 (en) * 2003-08-27 2005-03-17 Osram Sylvania Inc. Driver circuit for LED vehicle lamp
EP1589519A2 (en) * 2004-04-20 2005-10-26 Sony Corporation Constant current driving device, backlight light source device, and color liquid crystal display device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009138907A3 (en) * 2008-05-13 2010-01-07 Nxp B.V. Detection of failures within lighting devices
DE102012106272A1 (en) * 2012-07-12 2014-01-16 Osram Opto Semiconductors Gmbh Arrangement of optoelectronic component e.g. LED, has coupling element whose electrical resistance is higher and lower than that of optoelectronic component, so that heat is applied to coupling element by heating resistor
CN110798935A (en) * 2019-11-19 2020-02-14 深圳欧创芯半导体有限公司 LED lamp string control method, device and system and terminal equipment
CN110798935B (en) * 2019-11-19 2021-10-08 深圳欧创芯半导体有限公司 LED lamp string control method, device and system and terminal equipment

Also Published As

Publication number Publication date
CN101005065A (en) 2007-07-25
CN100521200C (en) 2009-07-29

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