EP1599904A4 - Laterale lubistorstruktur und verfahren - Google Patents

Laterale lubistorstruktur und verfahren

Info

Publication number: EP1599904A4
Authority: EP; European Patent Office
Prior art keywords: lateral; lubistor; lubistor structure; lateral lubistor
Prior art date: 2002-12-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Ceased

Application number

EP02786852A

Other languages

English (en)

French (fr)

Other versions

EP1599904A1 (de

Inventor

Jack Mandelman

Steven H Voldman

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Business Machines Corp

Original Assignee

International Business Machines Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-12-03

Filing date

2002-12-03

Publication date

2006-04-26

2002-12-03 Application filed by International Business Machines Corp filed Critical International Business Machines Corp

2005-11-30 Publication of EP1599904A1 publication Critical patent/EP1599904A1/de

2006-04-26 Publication of EP1599904A4 publication Critical patent/EP1599904A4/de

Status Ceased legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/211—Gated diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/62—Fin field-effect transistors [FinFET]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/62—Fin field-effect transistors [FinFET]
- H10D30/6218—Fin field-effect transistors [FinFET] of the accumulation type
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

EP02786852A 2002-12-03 2002-12-03 Laterale lubistorstruktur und verfahren Ceased EP1599904A4 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
PCT/US2002/038546 WO2004051749A1 (en)	2002-12-03	2002-12-03	Lateral lubistor structure and method

Publications (2)

Publication Number	Publication Date
EP1599904A1 EP1599904A1 (de)	2005-11-30
EP1599904A4 true EP1599904A4 (de)	2006-04-26

Family

ID=32467120

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP02786852A Ceased EP1599904A4 (de)	2002-12-03	2002-12-03	Laterale lubistorstruktur und verfahren

Country Status (5)

Country	Link
EP (1)	EP1599904A4 (de)
JP (1)	JP2006522460A (de)
CN (1)	CN100459119C (de)
AU (1)	AU2002351206A1 (de)
WO (1)	WO2004051749A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE102005007822B4 (de)	2005-02-21	2014-05-22	Infineon Technologies Ag	Integrierte Schaltungsanordnung mit Tunnel-Feldeffekttransistor
DE102005022763B4 (de)	2005-05-18	2018-02-01	Infineon Technologies Ag	Elektronische Schaltkreis-Anordnung und Verfahren zum Herstellen eines elektronischen Schaltkreises
DE102005039365B4 (de) *	2005-08-19	2022-02-10	Infineon Technologies Ag	Gate-gesteuertes Fin-Widerstandselement, welches als pinch - resistor arbeitet, zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis
CN100449783C (zh) *	2005-11-29	2009-01-07	台湾积体电路制造股份有限公司	具有体接触窗的鳍状场效应晶体管及其制造方法
DE102006022105B4 (de) *	2006-05-11	2012-03-08	Infineon Technologies Ag	ESD-Schutz-Element und ESD-Schutz-Einrichtung zur Verwendung in einem elektrischen Schaltkreis
DE102006023429B4 (de)	2006-05-18	2011-03-10	Infineon Technologies Ag	ESD-Schutz-Element zur Verwendung in einem elektrischen Schaltkreis
US7456471B2 (en) *	2006-09-15	2008-11-25	International Business Machines Corporation	Field effect transistor with raised source/drain fin straps
EP2117045A1 (de) *	2008-05-09	2009-11-11	Imec	Designverfahren für MuGFET ESD Schutzvorrichtungen
US8232603B2 (en) *	2009-03-19	2012-07-31	International Business Machines Corporation	Gated diode structure and method including relaxed liner
CN102683418B (zh) *	2012-05-22	2014-11-26	清华大学	一种finfet动态随机存储器单元及其制备方法
US8785968B2 (en)	2012-10-08	2014-07-22	Intel Mobile Communications GmbH	Silicon controlled rectifier (SCR) device for bulk FinFET technology
US9209265B2 (en) *	2012-11-15	2015-12-08	Taiwan Semiconductor Manufacturing Company, Ltd.	ESD devices comprising semiconductor fins
US9093492B2 (en)	2012-11-29	2015-07-28	Taiwan Semiconductor Manufacturing Company, Ltd.	Diode structure compatible with FinFET process
CN104124153B (zh) *	2013-04-28	2016-08-31	中芯国际集成电路制造(上海)有限公司	鳍式双极结型晶体管及其形成方法
US9601607B2 (en) *	2013-11-27	2017-03-21	Qualcomm Incorporated	Dual mode transistor
CN107369710B (zh) *	2016-05-12	2020-06-09	中芯国际集成电路制造(上海)有限公司	栅控二极管及其形成方法
CN107492569B (zh) *	2016-06-12	2020-02-07	中芯国际集成电路制造(上海)有限公司	栅控二极管及其形成方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4037140A (en) *	1976-04-14	1977-07-19	Rca Corporation	Protection circuit for insulated-gate field-effect transistors (IGFETS)
US4282556A (en) *	1979-05-21	1981-08-04	Rca Corporation	Input protection device for insulated gate field effect transistor
US5616944A (en) *	1990-05-21	1997-04-01	Canon Kabushiki Kaisha	Diode and semiconductor device having a controlled intrinsic or low impurity concentration region between opposite conductivity type semiconductor regions
US6096584A (en) *	1997-03-05	2000-08-01	International Business Machines Corporation	Silicon-on-insulator and CMOS-on-SOI double film fabrication process with a coplanar silicon and isolation layer and adding a second silicon layer on one region
US6413802B1 (en) *	2000-10-23	2002-07-02	The Regents Of The University Of California	Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
US20020109153A1 (en) *	2001-02-15	2002-08-15	Ming-Dou Ker	Silicon-on-insulator diodes and ESD protection circuits

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5610790A (en) *	1995-01-20	1997-03-11	Xilinx, Inc.	Method and structure for providing ESD protection for silicon on insulator integrated circuits
JPH10125801A (ja) *	1996-09-06	1998-05-15	Mitsubishi Electric Corp	半導体集積回路装置

2002
- 2002-12-03 EP EP02786852A patent/EP1599904A4/de not_active Ceased
- 2002-12-03 WO PCT/US2002/038546 patent/WO2004051749A1/en active Application Filing
- 2002-12-03 JP JP2004557083A patent/JP2006522460A/ja active Pending
- 2002-12-03 AU AU2002351206A patent/AU2002351206A1/en not_active Abandoned
- 2002-12-03 CN CNB028299787A patent/CN100459119C/zh not_active Expired - Lifetime

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4037140A (en) *	1976-04-14	1977-07-19	Rca Corporation	Protection circuit for insulated-gate field-effect transistors (IGFETS)
US4282556A (en) *	1979-05-21	1981-08-04	Rca Corporation	Input protection device for insulated gate field effect transistor
US5616944A (en) *	1990-05-21	1997-04-01	Canon Kabushiki Kaisha	Diode and semiconductor device having a controlled intrinsic or low impurity concentration region between opposite conductivity type semiconductor regions
US6096584A (en) *	1997-03-05	2000-08-01	International Business Machines Corporation	Silicon-on-insulator and CMOS-on-SOI double film fabrication process with a coplanar silicon and isolation layer and adding a second silicon layer on one region
US6413802B1 (en) *	2000-10-23	2002-07-02	The Regents Of The University Of California	Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
US20020109153A1 (en) *	2001-02-15	2002-08-15	Ming-Dou Ker	Silicon-on-insulator diodes and ESD protection circuits

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
See also references of WO2004051749A1 *
YASUHISA OMURA: "A lateral, unidirectional, bipolar-type insulated-gate transistor-A novel semiconductor device", APPL. PHYS. LETT., vol. 40, no. 6, 15 March 1982 (1982-03-15), pages 528 - 529, XP002369302 *

Also Published As

Publication number	Publication date
AU2002351206A1 (en)	2004-06-23
JP2006522460A (ja)	2006-09-28
EP1599904A1 (de)	2005-11-30
WO2004051749A1 (en)	2004-06-17
CN1695245A (zh)	2005-11-09
CN100459119C (zh)	2009-02-04

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Legal Events

Date	Code	Title	Description
2005-10-14	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
2005-11-30	17P	Request for examination filed	Effective date: 20050701
2005-11-30	AK	Designated contracting states	Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SI SK TR
2005-11-30	AX	Request for extension of the european patent	Extension state: AL LT LV MK RO
2006-03-29	DAX	Request for extension of the european patent (deleted)
2006-04-19	RIC1	Information provided on ipc code assigned before grant	Ipc: H01L 27/12 20060101ALI20060228BHEP Ipc: H01L 29/786 20060101ALI20060228BHEP Ipc: H01L 21/336 20060101ALI20060228BHEP Ipc: H01L 27/01 20060101ALI20060228BHEP Ipc: H01L 23/62 20060101ALI20060228BHEP Ipc: H01L 27/02 20060101ALI20060228BHEP Ipc: H01L 29/739 20060101AFI20060228BHEP
2006-04-26	A4	Supplementary search report drawn up and despatched	Effective date: 20060313
2006-08-23	17Q	First examination report despatched	Effective date: 20060720
2007-05-30	17Q	First examination report despatched	Effective date: 20060720
2011-03-18	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED
2011-04-20	18R	Application refused	Effective date: 20101118