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EP1571194A4 - PHOSPHORUS OXYNITRIDE, CORRESPONDING PRODUCTION METHOD, AND LUMINESCENT DEVICE USING PHOSPHORUS OXYNITRIDE - Google Patents

PHOSPHORUS OXYNITRIDE, CORRESPONDING PRODUCTION METHOD, AND LUMINESCENT DEVICE USING PHOSPHORUS OXYNITRIDE

Info

Publication number
EP1571194A4
EP1571194A4 EP03754118A EP03754118A EP1571194A4 EP 1571194 A4 EP1571194 A4 EP 1571194A4 EP 03754118 A EP03754118 A EP 03754118A EP 03754118 A EP03754118 A EP 03754118A EP 1571194 A4 EP1571194 A4 EP 1571194A4
Authority
EP
European Patent Office
Prior art keywords
phosphorus oxynitride
group
production method
luminescent device
corresponding production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP03754118A
Other languages
German (de)
French (fr)
Other versions
EP1571194A1 (en
EP1571194B1 (en
Inventor
Hiroto Tamaki
Suguru Takashima
Masatoshi Kameshima
Takahiro Naitou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002381025A external-priority patent/JP2004210921A/en
Priority claimed from JP2003028611A external-priority patent/JP4415548B2/en
Priority claimed from JP2003028610A external-priority patent/JP4415547B2/en
Priority claimed from JP2003070043A external-priority patent/JP4442101B2/en
Priority to EP20100165443 priority Critical patent/EP2241607B1/en
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to EP10165445.7A priority patent/EP2241608B1/en
Publication of EP1571194A1 publication Critical patent/EP1571194A1/en
Publication of EP1571194A4 publication Critical patent/EP1571194A4/en
Publication of EP1571194B1 publication Critical patent/EP1571194B1/en
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883—Arsenides; Nitrides; Phosphides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77347—Silicon Nitrides or Silicon Oxynitrides
    • H—ELECTRICITY
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    • H01L2924/0001—Technical content checked by a classifier
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    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)

Abstract

An oxynitride phosphor consisting of a crystal containing at least one or more of Group II elements selected from the group consisting of Be, Mg, Ca, Sr, Ba and Zn, at least one or more of Group IV elements selected from the group consisting of C, Si, Ge, Sn, Ti, Zr and Hf, and a rare earth element being an activator R, thereby providing a phosphor which is excited by an excitation light source at an ultraviolet to visible light region and which has a blue green to yellow luminescence color that is wavelength converted. <IMAGE>
EP03754118A 2002-10-16 2003-10-15 Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor Expired - Lifetime EP1571194B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP10165445.7A EP2241608B1 (en) 2002-10-16 2003-10-15 Oxynitride phosphor and light-emitting device using oxynitride phosphor
EP20100165443 EP2241607B1 (en) 2002-10-16 2003-10-15 Light-emitting device using oxynitride phosphor

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
JP2002301636 2002-10-16
JP2002301637 2002-10-16
JP2002301636 2002-10-16
JP2002301637 2002-10-16
JP2002381025A JP2004210921A (en) 2002-12-27 2002-12-27 Oxynitride fluorophor and method for producing the same and light-emitting device using the same
JP2002381025 2002-12-27
JP2003028610A JP4415547B2 (en) 2002-10-16 2003-02-05 Oxynitride phosphor and method for producing the same
JP2003028610 2003-02-05
JP2003028611 2003-02-05
JP2003028611A JP4415548B2 (en) 2002-10-16 2003-02-05 Light emitting device using oxynitride phosphor
JP2003070043 2003-03-14
JP2003070043A JP4442101B2 (en) 2003-03-14 2003-03-14 Oxynitride phosphor and light emitting device using the same
PCT/JP2003/013157 WO2004039915A1 (en) 2002-10-16 2003-10-15 Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor

Related Child Applications (3)

Application Number Title Priority Date Filing Date
EP10165445.7A Division EP2241608B1 (en) 2002-10-16 2003-10-15 Oxynitride phosphor and light-emitting device using oxynitride phosphor
EP10165443.2 Division-Into 2010-06-09
EP10165445.7 Division-Into 2010-06-09

Publications (3)

Publication Number Publication Date
EP1571194A1 EP1571194A1 (en) 2005-09-07
EP1571194A4 true EP1571194A4 (en) 2010-07-07
EP1571194B1 EP1571194B1 (en) 2012-12-12

Family

ID=32234482

Family Applications (3)

Application Number Title Priority Date Filing Date
EP20100165443 Expired - Lifetime EP2241607B1 (en) 2002-10-16 2003-10-15 Light-emitting device using oxynitride phosphor
EP10165445.7A Expired - Lifetime EP2241608B1 (en) 2002-10-16 2003-10-15 Oxynitride phosphor and light-emitting device using oxynitride phosphor
EP03754118A Expired - Lifetime EP1571194B1 (en) 2002-10-16 2003-10-15 Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor

Family Applications Before (2)

Application Number Title Priority Date Filing Date
EP20100165443 Expired - Lifetime EP2241607B1 (en) 2002-10-16 2003-10-15 Light-emitting device using oxynitride phosphor
EP10165445.7A Expired - Lifetime EP2241608B1 (en) 2002-10-16 2003-10-15 Oxynitride phosphor and light-emitting device using oxynitride phosphor

Country Status (7)

Country Link
US (4) US7794624B2 (en)
EP (3) EP2241607B1 (en)
KR (2) KR100982617B1 (en)
AU (1) AU2003273003A1 (en)
MY (1) MY149573A (en)
TW (1) TWI246203B (en)
WO (1) WO2004039915A1 (en)

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* Cited by examiner, † Cited by third party
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EP2290715B1 (en) 2002-08-01 2019-01-23 Nichia Corporation Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
MY149573A (en) * 2002-10-16 2013-09-13 Nichia Corp Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
EP1510564A1 (en) * 2003-08-27 2005-03-02 Fuji Photo Film Co., Ltd. Radiation image storage panel
US7723740B2 (en) * 2003-09-18 2010-05-25 Nichia Corporation Light emitting device
TW200523340A (en) * 2003-09-24 2005-07-16 Patent Treuhand Ges Fur Elek Sche Gluhlampen Mbh Hochefeizienter leuchtstoff
JP3837588B2 (en) 2003-11-26 2006-10-25 独立行政法人物質・材料研究機構 Phosphors and light emitting devices using phosphors
JP4568894B2 (en) * 2003-11-28 2010-10-27 Ｄｏｗａエレクトロニクス株式会社 Composite conductor and superconducting equipment system
JP3931239B2 (en) * 2004-02-18 2007-06-13 独立行政法人物質・材料研究機構 Light emitting device and lighting apparatus
JP4511849B2 (en) 2004-02-27 2010-07-28 Ｄｏｗａエレクトロニクス株式会社 Phosphor and its manufacturing method, light source, and LED
KR100847957B1 (en) 2004-04-27 2008-07-22 마쯔시다덴기산교 가부시키가이샤 Phosphor composition and method for producing the same, and light-emitting device using the same
KR100655894B1 (en) * 2004-05-06 2006-12-08 서울옵토디바이스주식회사 Wavelength conversion light emitting device with excellent color temperature and color rendering
KR100658700B1 (en) * 2004-05-13 2006-12-15 서울옵토디바이스주식회사 Light emitting device combining RGB light emitting element and phosphor
JP4524468B2 (en) 2004-05-14 2010-08-18 Ｄｏｗａエレクトロニクス株式会社 Phosphor, method for producing the same, light source using the phosphor, and LED
JP4491585B2 (en) * 2004-05-28 2010-06-30 Ｄｏｗａエレクトロニクス株式会社 Method for producing metal paste
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
KR100665299B1 (en) * 2004-06-10 2007-01-04 서울반도체 주식회사 Emitting material
US8318044B2 (en) 2004-06-10 2012-11-27 Seoul Semiconductor Co., Ltd. Light emitting device
KR100665298B1 (en) * 2004-06-10 2007-01-04 서울반도체 주식회사 Light emitting device
JP4414821B2 (en) 2004-06-25 2010-02-10 Ｄｏｗａエレクトロニクス株式会社 Phosphor, light source and LED
JP4511885B2 (en) 2004-07-09 2010-07-28 Ｄｏｗａエレクトロニクス株式会社 Phosphor, LED and light source
JP4422653B2 (en) * 2004-07-28 2010-02-24 Ｄｏｗａエレクトロニクス株式会社 Phosphor, production method thereof, and light source
US7138756B2 (en) 2004-08-02 2006-11-21 Dowa Mining Co., Ltd. Phosphor for electron beam excitation and color display device using the same
JP4933739B2 (en) * 2004-08-02 2012-05-16 Ｄｏｗａホールディングス株式会社 Phosphor and phosphor film for electron beam excitation, and color display device using them
JP4524470B2 (en) 2004-08-20 2010-08-18 Ｄｏｗａエレクトロニクス株式会社 Phosphor, method for producing the same, and light source using the phosphor
US7476338B2 (en) 2004-08-27 2009-01-13 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method for the same, and light source
JP4543250B2 (en) * 2004-08-27 2010-09-15 Ｄｏｗａエレクトロニクス株式会社 Phosphor mixture and light emitting device
JP2006257385A (en) * 2004-09-09 2006-09-28 Showa Denko Kk Oxynitride phosphor and method for producing the same
JP2006086469A (en) * 2004-09-17 2006-03-30 Matsushita Electric Ind Co Ltd Semiconductor light emitting device, illumination module, illumination device, and method for manufacturing semiconductor light emitting device
DE102004051395A1 (en) 2004-10-21 2006-04-27 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Highly efficient, stable oxynitride phosphor
JP4543253B2 (en) * 2004-10-28 2010-09-15 Ｄｏｗａエレクトロニクス株式会社 Phosphor mixture and light emitting device
JP2006156837A (en) * 2004-11-30 2006-06-15 Matsushita Electric Ind Co Ltd Semiconductor light emitting device, light emitting module, and lighting device
US7719015B2 (en) * 2004-12-09 2010-05-18 3M Innovative Properties Company Type II broadband or polychromatic LED's
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
JP2006213910A (en) * 2005-01-06 2006-08-17 Matsushita Electric Ind Co Ltd Oxynitride phosphor and light emitting device
EP1854339B1 (en) * 2005-02-17 2013-04-24 Philips Intellectual Property & Standards GmbH Illumination system comprising a green-emitting ceramic luminescence converter
JP4892193B2 (en) * 2005-03-01 2012-03-07 Ｄｏｗａホールディングス株式会社 Phosphor mixture and light emitting device
US7524437B2 (en) 2005-03-04 2009-04-28 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
US7341878B2 (en) * 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
US7443094B2 (en) * 2005-03-31 2008-10-28 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
US7445730B2 (en) * 2005-03-31 2008-11-04 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
WO2006106948A1 (en) * 2005-04-01 2006-10-12 Mitsubishi Chemical Corporation Alloy powder for aw material of inorganic functional material and phosphor
CN100403563C (en) * 2005-04-18 2008-07-16 光宝科技股份有限公司 White light emitting diode element and related fluorescent powder and preparation method
US7994702B2 (en) 2005-04-27 2011-08-09 Prysm, Inc. Scanning beams displays based on light-emitting screens having phosphors
JP4975269B2 (en) * 2005-04-28 2012-07-11 Ｄｏｗａホールディングス株式会社 Phosphor and method for producing the same, and light emitting device using the phosphor
KR100704492B1 (en) * 2005-05-02 2007-04-09 한국화학연구원 Method for manufacturing white light emitting diode using phosphor
CN100454591C (en) * 2005-05-10 2009-01-21 光宝科技股份有限公司 Light Emitting Diode Components Containing Phosphor Powder
WO2006135005A1 (en) * 2005-06-15 2006-12-21 Nichia Corporation Light emitting device
US20070040182A1 (en) * 2005-08-16 2007-02-22 Julian Lee Light emitting diode packaging structure
KR101055772B1 (en) * 2005-12-15 2011-08-11 서울반도체 주식회사 Light emitting device
US20090033201A1 (en) * 2006-02-02 2009-02-05 Mitsubishi Chemical Corporation Complex oxynitride phosphor, light-emitting device using same, image display, illuminating device, phosphor-containing composition and complex oxynitride
KR100809639B1 (en) * 2006-02-20 2008-03-05 특허법인 맥 Mixed phosphor and white light emitting device using same
DE102006008300A1 (en) * 2006-02-22 2007-08-30 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Highly efficient phosphor from oxynitridosilicates with cation, used in white light emitting diodes
KR100875443B1 (en) 2006-03-31 2008-12-23 서울반도체 주식회사 Light emitting device
KR100731678B1 (en) * 2006-05-08 2007-06-22 서울반도체 주식회사 Chip type light emitting diode package and light emitting device having the same
CA2647845A1 (en) 2006-05-30 2007-12-13 University Of Georgia Research Foundation White phosphors, methods of making white phosphors, white light emitting leds, methods of making white light emitting leds, and light bulb structures
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
US7952110B2 (en) * 2006-06-12 2011-05-31 3M Innovative Properties Company LED device with re-emitting semiconductor construction and converging optical element
TW200817804A (en) * 2006-06-12 2008-04-16 3M Innovative Properties Co LED device with re-emitting semiconductor construction and converging optical element
US7902542B2 (en) * 2006-06-14 2011-03-08 3M Innovative Properties Company Adapted LED device with re-emitting semiconductor construction
KR101258227B1 (en) * 2006-08-29 2013-04-25 서울반도체 주식회사 Light emitting device
JP2008135725A (en) * 2006-10-31 2008-06-12 Toshiba Corp Semiconductor light emitting device
JP4266234B2 (en) * 2007-03-29 2009-05-20 株式会社東芝 Manufacturing method of semiconductor light emitting device
EP2009077A1 (en) * 2007-06-29 2008-12-31 Leuchtstoffwerk Breitungen GmbH Manganese-doped metal-silicon-nitrides phosphors
CN101157854B (en) * 2007-07-02 2010-10-13 北京宇极科技发展有限公司 Oxynitrides luminescent material, preparation method and uses thereof
EP2180031A4 (en) * 2007-08-01 2011-05-25 Mitsubishi Chem Corp LUMINESCENT MATERIAL AND MANUFACTURING METHOD THEREOF, CRYSTALLINE SILICON NITRIDE AND MANUFACTURING METHOD THEREOF, COMPOSITION CONTAINING LUMINESCENT SUBSTANCE, LIGHT-EMITTING DEVICE USING THE LUMINESCENT SUBSTANCE, IMAGE DISPLAY DEVICE, AND ILLUMINATION DEVICE
WO2009025469A2 (en) 2007-08-22 2009-02-26 Seoul Semiconductor Co., Ltd. Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same
CN101378103A (en) * 2007-08-28 2009-03-04 富士迈半导体精密工业（上海）有限公司 White light light-emitting device and manufacturing method thereof
KR101055769B1 (en) 2007-08-28 2011-08-11 서울반도체 주식회사 Light-emitting device adopting non-stoichiometric tetra-alkaline earth silicate phosphor
JP5183128B2 (en) 2007-08-30 2013-04-17 凸版印刷株式会社 Liquid crystal display
DE102007057710B4 (en) * 2007-09-28 2024-03-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Radiation-emitting component with conversion element
DE102008058295A1 (en) 2008-11-20 2010-05-27 Osram Gesellschaft mit beschränkter Haftung Red-emitting phosphor from the class of nitridosilicates and light source with such a phosphor and method for producing the phosphor
EP2377908A1 (en) * 2008-12-22 2011-10-19 Kumho Electric, Inc. Oxynitride phosphor, method for preparing the same, and light-emitting device
KR100919315B1 (en) * 2008-12-22 2009-10-01 금호전기주식회사 Oxynitride phosphor and method for manufacturing the same, and light-emitting device
US9349924B2 (en) * 2009-03-19 2016-05-24 Koninklijke Phililps N.V. Illumination device with remote luminescent material
BRPI1006558A2 (en) * 2009-04-06 2019-09-24 Koninl Philips Electronics Nv luminescent converter for a phosphor intensified light source and a phosphor intensified light source
KR101055762B1 (en) * 2009-09-01 2011-08-11 서울반도체 주식회사 Light-emitting device employing a light-emitting material having an oxyosilicate light emitter
DE102009030205A1 (en) * 2009-06-24 2010-12-30 Litec-Lp Gmbh Phosphors with Eu (II) -doped silicate luminophores
KR20110000286A (en) * 2009-06-26 2011-01-03 삼성전자주식회사 Method for producing (oxy) nitride phosphor, (oxy) nitride phosphor obtained therefrom and white light emitting device having same
KR101172143B1 (en) * 2009-08-10 2012-08-07 엘지이노텍 주식회사 OXYNITRIDE-BASED PHOSPHORS COMPOSING OF SiON ELEMENT FOR WHITE LEDs, MANUFACTURING METHOD THEREOF AND LEDs USING THE SAME
WO2011028033A2 (en) * 2009-09-02 2011-03-10 엘지이노텍주식회사 Phosphor, preparation method of phosphor, and white light emitting device
KR101163902B1 (en) * 2010-08-10 2012-07-09 엘지이노텍 주식회사 Light emitting device
KR20110050206A (en) * 2009-11-06 2011-05-13 삼성전자주식회사 Oxynitride phosphor, manufacturing method thereof and white light emitting device using same
TW201202391A (en) * 2010-07-14 2012-01-16 Forward Electronics Co Ltd Phosphor composition for AC LED and AC LED manufactured by using the same
US20120019126A1 (en) * 2010-07-22 2012-01-26 General Electric Company Oxynitride phosphors, method of preparation, and light emitting instrument
SG191944A1 (en) * 2011-01-14 2013-08-30 Lightscape Materials Inc Carbonitride and carbidonitride phosphors and lighting devices using the same
WO2012120433A1 (en) * 2011-03-10 2012-09-13 Koninklijke Philips Electronics N.V. Phosphor composition for leds
CN102796517B (en) * 2011-05-23 2015-02-04 海洋王照明科技股份有限公司 Nitrogenous magnesium silicate film, and preparation method and application thereof
KR101389089B1 (en) 2011-06-16 2014-04-29 한국화학연구원 Method of manufacturing silicon nitride phosphor using metal silicon oxynitride phosphor
JP5373859B2 (en) * 2011-07-05 2013-12-18 デクセリアルズ株式会社 Lighting device
DE102011115879A1 (en) * 2011-10-12 2013-04-18 Osram Opto Semiconductors Gmbh Optoelectronic component and phosphors
CN102559173B (en) * 2011-12-27 2013-12-11 江苏博睿光电有限公司 Core-surface layer gradient nitrogen oxide fluorescent powder, manufacturing method thereof and light-emitting device adopting fluorescent powder
KR101890185B1 (en) * 2012-01-27 2018-08-21 엘지이노텍 주식회사 Phosphor and lighting device
US8471460B1 (en) 2012-04-05 2013-06-25 Epistar Corporation Phosphor
JP5885174B2 (en) * 2012-07-25 2016-03-15 国立研究開発法人物質・材料研究機構 Phosphor, method for manufacturing the same, light emitting device, and image display device
TWI494413B (en) 2012-12-22 2015-08-01 Chi Mei Corp Phosphor and illuminating device
KR101439735B1 (en) * 2013-01-23 2014-09-17 주식회사 효성 Green phosphate and manufacturing method of the same
WO2014119146A1 (en) * 2013-01-31 2014-08-07 シャープ株式会社 Method for manufacturing light-emitting device, and light-emitting device
TWI464236B (en) * 2013-03-27 2014-12-11 Chi Mei Corp Phosphor particle and light emitting device
TWI464238B (en) 2013-03-27 2014-12-11 Chi Mei Corp Phosphor and illuminating device
JP2014224182A (en) * 2013-05-15 2014-12-04 株式会社東芝 Phosphor, light-emitting device, and production method of phosphor
TWI626395B (en) 2013-06-11 2018-06-11 晶元光電股份有限公司 Illuminating device
US9416313B2 (en) 2013-08-22 2016-08-16 Panasonic Intellectual Property Management Co., Ltd. Yellow fluorescent substance, light-emitting device, illumination device, and vehicle
CN108822835B (en) * 2013-10-08 2022-07-29 欧司朗光电半导体有限公司 Luminescent material, method for producing luminescent material, and application of luminescent material
CN105745303A (en) * 2013-11-13 2016-07-06 Lg伊诺特有限公司 Blue-green phosphor, and light-emitting device package and lighting apparatus comprising same
EP3092284A1 (en) * 2014-01-09 2016-11-16 Merck Patent GmbH Phosphors based on europium-doped alkaline earth metal silicon oxynitrides
KR102214065B1 (en) * 2014-02-20 2021-02-09 엘지전자 주식회사 Oxy-nitride phophor, method for manufacturing the same and light emitting device package
KR102214067B1 (en) * 2014-02-27 2021-02-09 엘지전자 주식회사 Oxy-nitride phophor, method for manufacturing the same and light emitting device package
JP6156440B2 (en) * 2014-05-30 2017-07-05 日亜化学工業株式会社 Red light emitting phosphor and light emitting device using the same
KR101528104B1 (en) * 2014-06-11 2015-06-11 주식회사 효성 Oxynitride phosphor of improved reliability, method for manufacturing thereof, and white emitting device comprising the same
JP6296024B2 (en) * 2015-08-28 2018-03-20 日亜化学工業株式会社 Semiconductor laser device
CN105838371A (en) * 2016-04-27 2016-08-10 山东盈光新材料有限公司 Nitric oxide fluorescent powder for LED and preparation method
DE102016124366A1 (en) * 2016-12-14 2018-06-14 Osram Gmbh Optoelectronic component
JP6898528B2 (en) * 2018-01-19 2021-07-07 ルミレッズ ホールディング ベーフェー Wavelength conversion material for light emitting devices
KR102307653B1 (en) * 2019-12-11 2021-10-05 한국산업기술대학교산학협력단 Method of manufacturing phosphor ceramics plate and phosphor ceramics plate manufactured therefrom
KR102599818B1 (en) 2022-01-20 2023-11-08 미쯔비시 케미컬 주식회사 Phosphor, light-emitting device, illumination device, image display device, and indicator lamp for vehicle
EP4293733A4 (en) 2022-01-20 2024-04-17 Mitsubishi Chemical Corporation Phosphor, light emitting device, illumination device, image display device, and vehicular display lamp
TWI831680B (en) * 2023-04-27 2024-02-01 隆達電子股份有限公司 Light conversion material and light emitting device and display device including the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001214162A (en) * 2000-02-02 2001-08-07 Japan Science & Technology Corp Phosphor with oxynitride glass as base material
US20020043926A1 (en) * 2000-08-28 2002-04-18 Toyoda Gosei Co., Ltd. Light-emitting unit
EP1471583A1 (en) * 2002-01-28 2004-10-27 Nichia Corporation Nitride semiconductor device having support substrate and its manufacturing method

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8400660A (en) 1984-03-01 1985-10-01 Philips Nv LUMINESCENT SCREEN.
NL8501600A (en) * 1985-06-04 1987-01-02 Philips Nv LUMINESCENT SCREEN AND LOW-PRESSURE MERCURY DISCHARGE LAMP FITTED WITH SUCH A SCREEN.
NL8501599A (en) * 1985-06-04 1987-01-02 Philips Nv LUMINESCENT SCREEN AND LOW-PRESSURE MERCURY DISCHARGE LAMP FITTED WITH SUCH A SCREEN.
EP1104799A1 (en) 1999-11-30 2001-06-06 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Red emitting luminescent material
JP3726131B2 (en) 2002-05-23 2005-12-14 独立行政法人物質・材料研究機構 Sialon phosphor
US6632379B2 (en) * 2001-06-07 2003-10-14 National Institute For Materials Science Oxynitride phosphor activated by a rare earth element, and sialon type phosphor
JP3668770B2 (en) 2001-06-07 2005-07-06 独立行政法人物質・材料研究機構 Oxynitride phosphor activated with rare earth elements
DE10133352A1 (en) * 2001-07-16 2003-02-06 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lighting unit with at least one LED as a light source
DE10146719A1 (en) * 2001-09-20 2003-04-17 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lighting unit with at least one LED as a light source
DE10147040A1 (en) * 2001-09-25 2003-04-24 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lighting unit with at least one LED as a light source
JP4868685B2 (en) 2002-06-07 2012-02-01 日亜化学工業株式会社 Phosphor
EP1413619A1 (en) 2002-09-24 2004-04-28 Osram Opto Semiconductors GmbH Luminescent material, especially for LED application
EP1413618A1 (en) * 2002-09-24 2004-04-28 Osram Opto Semiconductors GmbH Luminescent material, especially for LED application
JP4599163B2 (en) 2002-10-14 2010-12-15 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ EU (II) -light emitting device with activated phosphor
US6717353B1 (en) * 2002-10-14 2004-04-06 Lumileds Lighting U.S., Llc Phosphor converted light emitting device
MY149573A (en) * 2002-10-16 2013-09-13 Nichia Corp Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
EP1685583A1 (en) * 2003-11-11 2006-08-02 Koninklijke Philips Electronics N.V. Low-pressure vapor discharge lamp with a mercury-free gas filling
JP4991027B2 (en) 2005-12-26 2012-08-01 日亜化学工業株式会社 Oxynitride phosphor and light emitting device using the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001214162A (en) * 2000-02-02 2001-08-07 Japan Science & Technology Corp Phosphor with oxynitride glass as base material
US20020043926A1 (en) * 2000-08-28 2002-04-18 Toyoda Gosei Co., Ltd. Light-emitting unit
EP1471583A1 (en) * 2002-01-28 2004-10-27 Nichia Corporation Nitride semiconductor device having support substrate and its manufacturing method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2004039915A1 *

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