EP1464724A3 - Organometallic compounds suitable for use in vapor deposition processes - Google Patents
Organometallic compounds suitable for use in vapor deposition processes Download PDFInfo
- Publication number
- EP1464724A3 EP1464724A3 EP04251948A EP04251948A EP1464724A3 EP 1464724 A3 EP1464724 A3 EP 1464724A3 EP 04251948 A EP04251948 A EP 04251948A EP 04251948 A EP04251948 A EP 04251948A EP 1464724 A3 EP1464724 A3 EP 1464724A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- compounds suitable
- organometallic compounds
- vapor deposition
- deposition processes
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/28—Deposition of only one other non-metal element
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
- G06Q10/00—Administration; Management
- G06Q10/10—Office automation; Time management
- G06Q10/109—Time management, e.g. calendars, reminders, meetings or time accounting
- G06Q10/1091—Recording time for administrative or management purposes
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/117—Identification of persons
- A61B5/1171—Identification of persons based on the shapes or appearances of their bodies or parts thereof
- A61B5/1172—Identification of persons based on the shapes or appearances of their bodies or parts thereof using fingerprinting
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C391/00—Compounds containing selenium
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C395/00—Compounds containing tellurium
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0803—Compounds with Si-C or Si-Si linkages
- C07F7/0805—Compounds with Si-C or Si-Si linkages comprising only Si, C or H atoms
- C07F7/0807—Compounds with Si-C or Si-Si linkages comprising only Si, C or H atoms comprising Si as a ring atom
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0803—Compounds with Si-C or Si-Si linkages
- C07F7/0825—Preparations of compounds not comprising Si-Si or Si-cyano linkages
- C07F7/0827—Syntheses with formation of a Si-C bond
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/30—Germanium compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
- G06Q10/00—Administration; Management
- G06Q10/06—Resources, workflows, human or project management; Enterprise or organisation planning; Enterprise or organisation modelling
- G06Q10/063—Operations research, analysis or management
- G06Q10/0631—Resource planning, allocation, distributing or scheduling for enterprises or organisations
- G06Q10/06311—Scheduling, planning or task assignment for a person or group
- G06Q10/063116—Schedule adjustment for a person or group
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V20/00—Scenes; Scene-specific elements
- G06V20/80—Recognising image objects characterised by unique random patterns
-
- G—PHYSICS
- G07—CHECKING-DEVICES
- G07C—TIME OR ATTENDANCE REGISTERS; REGISTERING OR INDICATING THE WORKING OF MACHINES; GENERATING RANDOM NUMBERS; VOTING OR LOTTERY APPARATUS; ARRANGEMENTS, SYSTEMS OR APPARATUS FOR CHECKING NOT PROVIDED FOR ELSEWHERE
- G07C1/00—Registering, indicating or recording the time of events or elapsed time, e.g. time-recorders for work people
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Business, Economics & Management (AREA)
- Human Resources & Organizations (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Entrepreneurship & Innovation (AREA)
- Strategic Management (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Economics (AREA)
- Theoretical Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Operations Research (AREA)
- Educational Administration (AREA)
- General Business, Economics & Management (AREA)
- Tourism & Hospitality (AREA)
- Quality & Reliability (AREA)
- Marketing (AREA)
- Inorganic Chemistry (AREA)
- Pathology (AREA)
- Medical Informatics (AREA)
- Development Economics (AREA)
- Biophysics (AREA)
- Game Theory and Decision Science (AREA)
- Biomedical Technology (AREA)
- Heart & Thoracic Surgery (AREA)
- Data Mining & Analysis (AREA)
- Molecular Biology (AREA)
- Surgery (AREA)
- Animal Behavior & Ethology (AREA)
- General Health & Medical Sciences (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
- Multimedia (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08163178A EP1990345B1 (en) | 2003-04-05 | 2004-04-01 | Organometallic germanium compounds suitable for use in vapor deposition processes |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46079103P | 2003-04-05 | 2003-04-05 | |
US460791P | 2003-04-05 | ||
US51347603P | 2003-10-22 | 2003-10-22 | |
US513476P | 2003-10-22 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP08163178A Division EP1990345B1 (en) | 2003-04-05 | 2004-04-01 | Organometallic germanium compounds suitable for use in vapor deposition processes |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1464724A2 EP1464724A2 (en) | 2004-10-06 |
EP1464724A3 true EP1464724A3 (en) | 2007-01-10 |
EP1464724B1 EP1464724B1 (en) | 2008-12-10 |
Family
ID=32853627
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP08163178A Expired - Lifetime EP1990345B1 (en) | 2003-04-05 | 2004-04-01 | Organometallic germanium compounds suitable for use in vapor deposition processes |
EP04251948A Expired - Lifetime EP1464724B1 (en) | 2003-04-05 | 2004-04-01 | Organometallic germanium compounds suitable for use in vapor deposition processes |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP08163178A Expired - Lifetime EP1990345B1 (en) | 2003-04-05 | 2004-04-01 | Organometallic germanium compounds suitable for use in vapor deposition processes |
Country Status (8)
Country | Link |
---|---|
US (2) | US7413776B2 (en) |
EP (2) | EP1990345B1 (en) |
JP (2) | JP4954448B2 (en) |
KR (2) | KR101200524B1 (en) |
CN (1) | CN100516289C (en) |
DE (2) | DE602004018219D1 (en) |
SG (1) | SG126757A1 (en) |
TW (1) | TWI318222B (en) |
Families Citing this family (42)
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JP4714422B2 (en) * | 2003-04-05 | 2011-06-29 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | Method for depositing germanium-containing film and vapor delivery device |
US20060172068A1 (en) * | 2005-01-28 | 2006-08-03 | Ovshinsky Stanford R | Deposition of multilayer structures including layers of germanium and/or germanium alloys |
US20090022891A1 (en) * | 2006-02-08 | 2009-01-22 | Jsr Corporation | Method of forming metal film |
JP4957037B2 (en) * | 2006-03-24 | 2012-06-20 | 東ソー株式会社 | Organosilane compound, Si-containing film-forming material containing the same, production method and use |
US8895484B2 (en) | 2006-06-20 | 2014-11-25 | Restrack As | Use of biphenyl, terphenyl, and fluorene sulphonic acid based tracers for monitoring streams of fluids |
US8318966B2 (en) * | 2006-06-23 | 2012-11-27 | Praxair Technology, Inc. | Organometallic compounds |
KR100757415B1 (en) | 2006-07-13 | 2007-09-10 | 삼성전자주식회사 | Germanium compound and manufacturing method thereof, phase change memory device using the germanium compound and forming method thereof |
KR101501700B1 (en) * | 2007-04-02 | 2015-03-11 | 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 | Novel methods for making and using halosilylgermanes |
US20080312356A1 (en) * | 2007-06-13 | 2008-12-18 | Applied Mcrostructures, Inc. | Vapor-deposited biocompatible coatings which adhere to various plastics and metal |
TWI471449B (en) | 2007-09-17 | 2015-02-01 | Air Liquide | Tellurium precursors for gst film deposition |
US20090162973A1 (en) * | 2007-12-21 | 2009-06-25 | Julien Gatineau | Germanium precursors for gst film deposition |
KR100960355B1 (en) * | 2008-03-05 | 2010-05-28 | 한화케미칼 주식회사 | Improved Method of Making Organic-Transition Metal Hydrides as Hydrogen Storage Materials |
US8802194B2 (en) | 2008-05-29 | 2014-08-12 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Tellurium precursors for film deposition |
WO2010055423A2 (en) | 2008-05-29 | 2010-05-20 | L'air Liquide - Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude | Tellurium precursors for film deposition |
US8636845B2 (en) | 2008-06-25 | 2014-01-28 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Metal heterocyclic compounds for deposition of thin films |
US8236381B2 (en) | 2008-08-08 | 2012-08-07 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Metal piperidinate and metal pyridinate precursors for thin film deposition |
KR100984718B1 (en) * | 2008-08-11 | 2010-10-01 | 한화케미칼 주식회사 | An improved process for preparing organic-transition metal hydrides comprising aryl or alkyl as hydrogen storage material |
JP5547418B2 (en) * | 2009-03-19 | 2014-07-16 | 株式会社Adeka | Raw material for chemical vapor deposition and silicon-containing thin film forming method using the same |
JP2011054935A (en) * | 2009-06-19 | 2011-03-17 | Rohm & Haas Electronic Materials Llc | Doping method |
JP2011009479A (en) * | 2009-06-26 | 2011-01-13 | Gas-Phase Growth Ltd | Film formation material, film formation method, and element |
JP2013503849A (en) | 2009-09-02 | 2013-02-04 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Germanium (II) dihalide precursor for deposition of germanium-containing films |
WO2011095849A1 (en) | 2010-02-03 | 2011-08-11 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition |
US20120277457A1 (en) * | 2010-10-12 | 2012-11-01 | Air Products And Chemicals, Inc. | Aminosilanes and methods for making same |
US9476144B2 (en) * | 2011-03-28 | 2016-10-25 | Applied Materials, Inc. | Method and apparatus for the selective deposition of epitaxial germanium stressor alloys |
JP5785325B2 (en) * | 2011-06-03 | 2015-09-30 | エア プロダクツ アンド ケミカルズ インコーポレイテッドAir Products And Chemicals Incorporated | Compositions and methods for depositing carbon-doped silicon-containing films |
JP6007662B2 (en) | 2011-09-05 | 2016-10-12 | 東ソー株式会社 | Film forming material, sealing film using the same, and use thereof |
US8993072B2 (en) * | 2011-09-27 | 2015-03-31 | Air Products And Chemicals, Inc. | Halogenated organoaminosilane precursors and methods for depositing films comprising same |
JP2012142586A (en) * | 2012-02-20 | 2012-07-26 | Gas-Phase Growth Ltd | Film forming material and film forming method |
JP5780981B2 (en) * | 2012-03-02 | 2015-09-16 | 東京エレクトロン株式会社 | Method for forming germanium thin film |
WO2013151623A2 (en) * | 2012-04-05 | 2013-10-10 | Dow Corning Corporation | A method for preparing an organofunctional compound |
US9214630B2 (en) | 2013-04-11 | 2015-12-15 | Air Products And Chemicals, Inc. | Method of making a multicomponent film |
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KR101720017B1 (en) * | 2014-01-08 | 2017-03-27 | (주)디엔에프 | Novel trisilyl amine derivative, method for manufacturing thereof and silicon-containing thin film use the same |
KR101659610B1 (en) * | 2014-03-18 | 2016-09-23 | 주식회사 유진테크 머티리얼즈 | Organo germanium compounds and method of depositing thin film using them as precursors |
US10464953B2 (en) * | 2016-10-14 | 2019-11-05 | Versum Materials Us, Llc | Carbon bridged aminosilane compounds for high growth rate silicon-containing films |
EP3413334B1 (en) * | 2017-06-01 | 2020-09-09 | Evonik Operations GmbH | New chlorsilylaryl germanes, method for their preparation and their use |
KR102364476B1 (en) * | 2020-05-08 | 2022-02-18 | 주식회사 한솔케미칼 | Silicon precursor and fabrication method of silicon-containing thin film using the same |
US20230287562A1 (en) * | 2020-07-24 | 2023-09-14 | Versum Materials Us, Llc | Compositions nd methods using same for germanium seed layer |
EP4398885A1 (en) * | 2021-09-10 | 2024-07-17 | Regents of the University of Michigan | Gas-assisted cocrystal de-sublimation |
TW202413383A (en) | 2022-08-12 | 2024-04-01 | 美商蓋列斯特股份有限公司 | High purity tin compounds containing unsaturated substituent and method for preparation thereof |
US12145955B2 (en) | 2022-10-04 | 2024-11-19 | Gelest, Inc. | Cyclic azastannane and cyclic oxostannane compounds and methods for preparation thereof |
WO2025056568A1 (en) | 2023-09-13 | 2025-03-20 | Merck Patent Gmbh | Intramolecular stabilized mono alkyl metal compounds with improved thermal and light stability and their use thereof |
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TW200424243A (en) | 2004-11-16 |
JP5460501B2 (en) | 2014-04-02 |
SG126757A1 (en) | 2006-11-29 |
JP2004308007A (en) | 2004-11-04 |
KR20110091491A (en) | 2011-08-11 |
TWI318222B (en) | 2009-12-11 |
US7767840B2 (en) | 2010-08-03 |
US20040194703A1 (en) | 2004-10-07 |
CN100516289C (en) | 2009-07-22 |
EP1990345B1 (en) | 2010-11-10 |
US20090156852A1 (en) | 2009-06-18 |
CN1584108A (en) | 2005-02-23 |
JP4954448B2 (en) | 2012-06-13 |
DE602004030058D1 (en) | 2010-12-23 |
JP2010235633A (en) | 2010-10-21 |
KR101200524B1 (en) | 2012-11-13 |
EP1464724A2 (en) | 2004-10-06 |
KR101059732B1 (en) | 2011-08-26 |
EP1990345A1 (en) | 2008-11-12 |
KR20040086811A (en) | 2004-10-12 |
EP1464724B1 (en) | 2008-12-10 |
US7413776B2 (en) | 2008-08-19 |
DE602004018219D1 (en) | 2009-01-22 |
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