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EP1386019A1 - Apparatus and method for epitaxial sputter deposition of multi-compound magnetic epilayers with high deposition rate - Google Patents

Apparatus and method for epitaxial sputter deposition of multi-compound magnetic epilayers with high deposition rate

Info

Publication number
EP1386019A1
EP1386019A1 EP02721741A EP02721741A EP1386019A1 EP 1386019 A1 EP1386019 A1 EP 1386019A1 EP 02721741 A EP02721741 A EP 02721741A EP 02721741 A EP02721741 A EP 02721741A EP 1386019 A1 EP1386019 A1 EP 1386019A1
Authority
EP
European Patent Office
Prior art keywords
target
coil
substrate
sputtering
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02721741A
Other languages
German (de)
French (fr)
Inventor
Roman Chistyakov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of EP1386019A1 publication Critical patent/EP1386019A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/358—Inductive energy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Definitions

  • the invention relates to the sputter deposition of epitaxial films of magnetic materials.
  • magnetic target materials can be sputtered by magnetron sputtering sources to produce magnetic films at the same deposition rates of magnetron sputtering of non-magnetic materials. This is accomplished by rendering the magnetic target material temporarily non-magnetic during the sputtering process. Such temporary demagnetization of the magnetic target material is achieved by heating selected areas of the target material to a level substantially equal to or exceeding the Currie temperature of the material. This technique requires that specific areas be heated, thus making costs a major factor because of the equipment and time used in reaching the Currie temperature of the target materials. Also, this technique does not allow for multi-sputtering of nonmagnetic materials and magnetic materials simultaneously.
  • a chamber includes a magnetron sputtering source with a target.
  • the target includes either nonmagnetic materials or materials with low concentrations of magnetic elements, such that these magnetic elements cannot affect the magnetron's magnetic field.
  • a coil is disposed between the target and the substrate. The coil is constructed from highly magnetic materials and plays the role of secondary sputtering source for the magnetic materials. During the deposition process, material sputtered from the target and the coil creates a multi-compound magnetic epilayer on the substrate.
  • an apparatus for sputtering a film layer onto a substrate is provided.
  • the apparatus includes a sputtering chamber having a first sputtering target and a second sputtering target.
  • the sputtering chamber produces high- energy particles that bombard the first target and the second target.
  • the particles from the first target and the second target are deposited on the substrate.
  • the second target is a coil shaped object constructed from highly magnetic materials positioned between the first target and the substrate in the chamber.
  • the particles deposited on the substrate form a multi-compound magnetic epilayer on the substrate.
  • an apparatus for sputtering multi-compound film layers onto a substrate includes a sputtering chamber, a first target disposed in the sputtering chamber and comprised of non-magnetic materials, and a second target disposed in the sputtering chamber and comprised of magnetic materials.
  • the high-energy particles produced in the chamber bombard the first target and the second target, producing a plasma that includes particles from both the first and second target.
  • the particles in the plasma are sputtered on the substrate to produce multi-compound magnetic epilayers.
  • FIG. 1 is a schematic block diagram of a sputter epitaxy chamber that uses a target and a magnetic coil for sputtering, shown in cross sectional view, and
  • FIGS. 2 A and 2B are schematic block diagrams of various embodiments of the magnetic coil.
  • FIG. 1 is a block schematic of a sputter epitaxy chamber 1 that uses a target 2 and a coil 3 made of a magnetic material for sputtering.
  • the chamber is first evacuated with a vacuum pump 4 and filled with a sputter gas 5, for example Ar.
  • chamber 1 includes a substantially cylindrical outer wall 6 with a first cover 7.
  • F radio frequency
  • AC AC or direct current (DC) power supplies
  • DC direct current
  • the coil 3 is positioned between a substrate 11 and the target 2.
  • the substrate 11 is placed on the surface of a receiving plate 12.
  • the temperature of the substrate 11 can vary from room temperature to a high temperature, such as 800°C.
  • the coil 3 is configured with a single turn. However, the coil 3 can be configured to have two or more turns.
  • the coil 3 is connected to a second RF source 13 via a matching network 14.
  • the RF source 13 provides negative voltage bias to the coil 3 during plasma discharge.
  • the target 2 is made of iron-deficient iron garnet compound and the magnetic coil 3 is made from iron.
  • the magnet assembly 15 produces magnetic fields for the magnetron sputtering source. Said fields aid in sputtering particles in a specified region. By configuring the magnet assembly 15, any desired pattern for the occurrence of the majority of the sputtering can be achieved. Also, the invention requires that the target 2 either be comprised of a nonmagnetic material or contain a low concentration of magnetic elements, such that the level of target magnetization is low and cannot affect the magnetic fields from the magnet assembly 15.
  • the coil 3 is constructed of a high purity magnetic material.
  • Magnetron sputtering devices are widely used for thin film coatings.
  • a gas discharge is established within the chamber 1, thus causing positively charged ions to bombard the target surface 2 and the surface of the coil 3.
  • the collision of these positively charged ions with the target surface 2 and coil surface 15 causes particles of the target material and coil material to be released. These particles are then deposited on other structures within the vicinity.
  • the substrate 11 is placed in close proximity, thus causing the substrate 11 to be coated with materials from the target 2 and the coil 3.
  • plasma 16 is formed within the chamber 1.
  • the plasma 16 is made up of a collection of electrons and ions.
  • the plasma 16 is located a slight distance from the target 2.
  • the magnetic forces from the magnet assembly 15 and coil 3 cause the plasma 16 to stay within a certain defined region, which is within the middle interior portion of the coil 3.
  • the coil 3 provides coupling between the RF energy from a power supply 13 and the plasma 16. As a result, high-density plasma is created.
  • the deposition rate of the coil 3 is also changed.
  • FIGS. 2A and 2B are schematic block diagrams of various embodiments of the magnetic coil.
  • the magnetic coil 17 of FIG. 2 A is made from highly magnetic materials.
  • the coil 17 is comprised of a single magnetic material, such as iron, thus making the coil 17 a homogeneous structure.
  • the coil 18 may be a heterogeneous structure that includes several magnetic materials.
  • the materials selected to produce coil 17 must be able to sputter to produce magnetic films.
  • the coil 17 is an helical shaped structure with a single turn, a having width B, and a height A.
  • the RF power source 18 and the matching network 19 are used to adjust the deposition rates of sputter of the coil 17.
  • the power source 18, in this embodiment, is a 13.56 MHz power source that allows for adjusting variable power levels.
  • the power supply can use also different frequencies. Thus, one can control the deposition rates of the coil 18 by adjusting the power levels of the power source 18.
  • the coil 20 is configured with n-turns.
  • Each of the n-turns can be comprised of the same magnetic materials or different magnetic materials.
  • coil 20 is connected to a RF power source 18 and a matching network 19, as discussed above.
  • the RF power source 18 allows for adjusting the deposition rates of the coil 20.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

An apparatus (1) for sputtering a magnetic epitaxial film onto a substrate (11) including a sputtering chamber having a first sputtering target (2) and a second sputtering target (3). The sputtering chamber produces high-energy particles (16) that bombard the first target (2) and the second target (3). The particles from the first target (2) and the second target (3) are deposited on the substrate (11). The second target (3) is a coil shaped object constructed from highly magnetic materials positioned between the first target (2) and the substrate (11) in the chamber. The particles deposited on the substrate form a multi-compound magnetic epilayer on the substrate.

Description

APPARATUS AND METHOD FOR EPITAXIAL SPUTTER DEPOSITION OF MULTI-COMPOUND MAGNETIC EPILAYERS WITH HIGH DEPOSITION
RATE
PRIORITY INFORMATION
This application claims priority from provisional application Ser. No. 60/283514 filed April 11, 2001.
BACKGROUND OF THE INVENTION The invention relates to the sputter deposition of epitaxial films of magnetic materials.
It has been found that magnetic target materials can be sputtered by magnetron sputtering sources to produce magnetic films at the same deposition rates of magnetron sputtering of non-magnetic materials. This is accomplished by rendering the magnetic target material temporarily non-magnetic during the sputtering process. Such temporary demagnetization of the magnetic target material is achieved by heating selected areas of the target material to a level substantially equal to or exceeding the Currie temperature of the material. This technique requires that specific areas be heated, thus making costs a major factor because of the equipment and time used in reaching the Currie temperature of the target materials. Also, this technique does not allow for multi-sputtering of nonmagnetic materials and magnetic materials simultaneously.
SUMMARY OF THE INVENTION
According to one aspect of the invention, there is provided an apparatus and method for sputtering epitaxial films of magnetic films. A chamber includes a magnetron sputtering source with a target. The target includes either nonmagnetic materials or materials with low concentrations of magnetic elements, such that these magnetic elements cannot affect the magnetron's magnetic field. A coil is disposed between the target and the substrate. The coil is constructed from highly magnetic materials and plays the role of secondary sputtering source for the magnetic materials. During the deposition process, material sputtered from the target and the coil creates a multi-compound magnetic epilayer on the substrate. In another aspect of the invention, there is provided an apparatus for sputtering a film layer onto a substrate. The apparatus includes a sputtering chamber having a first sputtering target and a second sputtering target. The sputtering chamber produces high- energy particles that bombard the first target and the second target. The particles from the first target and the second target are deposited on the substrate. The second target is a coil shaped object constructed from highly magnetic materials positioned between the first target and the substrate in the chamber. The particles deposited on the substrate form a multi-compound magnetic epilayer on the substrate.
In yet another aspect of the invention, there is provided an apparatus for sputtering multi-compound film layers onto a substrate. The apparatus includes a sputtering chamber, a first target disposed in the sputtering chamber and comprised of non-magnetic materials, and a second target disposed in the sputtering chamber and comprised of magnetic materials. The high-energy particles produced in the chamber bombard the first target and the second target, producing a plasma that includes particles from both the first and second target. The particles in the plasma are sputtered on the substrate to produce multi-compound magnetic epilayers.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic block diagram of a sputter epitaxy chamber that uses a target and a magnetic coil for sputtering, shown in cross sectional view, and
FIGS. 2 A and 2B are schematic block diagrams of various embodiments of the magnetic coil.
DETAILED DESCRIPTION OF THE INVENTION FIG. 1 is a block schematic of a sputter epitaxy chamber 1 that uses a target 2 and a coil 3 made of a magnetic material for sputtering. To maintain a gas discharge, the chamber is first evacuated with a vacuum pump 4 and filled with a sputter gas 5, for example Ar. In this embodiment, chamber 1 includes a substantially cylindrical outer wall 6 with a first cover 7. To apply thin film coatings using magnetron sputter deposition, it is first required to establish a gas discharge within the chamber 1. This gas discharge is established by applying an electrical potential between a target 2 and an anode 8. A radio frequency ( F) power source 9 is electrically connected to the target 2 via a matching network 10.
Instead of the RF power supply, an alternative current (AC) or direct current (DC) power supplies can be used.
The coil 3 is positioned between a substrate 11 and the target 2. The substrate 11 is placed on the surface of a receiving plate 12. The temperature of the substrate 11 can vary from room temperature to a high temperature, such as 800°C. The coil 3 is configured with a single turn. However, the coil 3 can be configured to have two or more turns. The coil 3 is connected to a second RF source 13 via a matching network 14. The RF source 13 provides negative voltage bias to the coil 3 during plasma discharge. Through the magnetron sputter deposition process, particles of the target 2 and magnetic coil 3 will be deposited upon the substrate 11. In this embodiment, the target 2 is made of iron-deficient iron garnet compound and the magnetic coil 3 is made from iron.
Placed directly behind the target 2 is a magnet assembly 15. The magnet assembly 15 produces magnetic fields for the magnetron sputtering source. Said fields aid in sputtering particles in a specified region. By configuring the magnet assembly 15, any desired pattern for the occurrence of the majority of the sputtering can be achieved. Also, the invention requires that the target 2 either be comprised of a nonmagnetic material or contain a low concentration of magnetic elements, such that the level of target magnetization is low and cannot affect the magnetic fields from the magnet assembly 15. The coil 3 is constructed of a high purity magnetic material.
Magnetron sputtering devices are widely used for thin film coatings. Typically, a gas discharge is established within the chamber 1, thus causing positively charged ions to bombard the target surface 2 and the surface of the coil 3. The collision of these positively charged ions with the target surface 2 and coil surface 15 causes particles of the target material and coil material to be released. These particles are then deposited on other structures within the vicinity. Specifically, the substrate 11 is placed in close proximity, thus causing the substrate 11 to be coated with materials from the target 2 and the coil 3. Referring to FIG. 1, as a result of the gas discharge, plasma 16 is formed within the chamber 1. The plasma 16 is made up of a collection of electrons and ions. The plasma 16 is located a slight distance from the target 2. The magnetic forces from the magnet assembly 15 and coil 3 cause the plasma 16 to stay within a certain defined region, which is within the middle interior portion of the coil 3. The coil 3 provides coupling between the RF energy from a power supply 13 and the plasma 16. As a result, high-density plasma is created.
By changing the coil power level, the deposition rate of the coil 3 is also changed.
Therefore, using the RF power source 13 one can control or adjust the composition of the magnetic elements in a growing film. The coil 3 also creates a high level of ionization of the plasma components. This capability, coupled with the bias sputtering, enables one to change the film properties, such as film thickness uniformity, film stress, and film density. In this embodiment, the invention may use Argon gas as the sputter gas, however other gases may be used. FIGS. 2A and 2B are schematic block diagrams of various embodiments of the magnetic coil. The magnetic coil 17 of FIG. 2 A is made from highly magnetic materials.
In this embodiment, the coil 17 is comprised of a single magnetic material, such as iron, thus making the coil 17 a homogeneous structure. However, the coil 18 may be a heterogeneous structure that includes several magnetic materials. Also, the materials selected to produce coil 17 must be able to sputter to produce magnetic films.
The coil 17 is an helical shaped structure with a single turn, a having width B, and a height A. The RF power source 18 and the matching network 19 are used to adjust the deposition rates of sputter of the coil 17. The power source 18, in this embodiment, is a 13.56 MHz power source that allows for adjusting variable power levels. The power supply can use also different frequencies. Thus, one can control the deposition rates of the coil 18 by adjusting the power levels of the power source 18.
As shown in FIG. 2B, the coil 20 is configured with n-turns. Each of the n-turns can be comprised of the same magnetic materials or different magnetic materials.
Also, coil 20 is connected to a RF power source 18 and a matching network 19, as discussed above. The RF power source 18 allows for adjusting the deposition rates of the coil 20.
Although the present invention has been shown and described with respect to several preferred embodiments thereof, various changes, omissions and additions to the form and detail thereof, may be made therein, without departing from the spirit and scope of the invention.
What is claimed is:

Claims

CLAIMS 1. An apparatus for sputtering a film layer onto a substrate, comprising: a sputtering chamber having a first sputtering target and a second sputtering target, said sputtering chamber produces high-energy particles that bombard said first target and said second target, wherein particles from said first target and said second target are deposited on said substrate; said second target is a coil shaped object of highly magnetic materials positioned between said first target and said substrate, wherein said particles deposited on said substrate form a multi-compound magnetic epilayer on said substrate.
2. The apparatus of claim 1, wherein said first target comprises non-magnetic materials.
3. The apparatus of claim 1, wherein said first target includes a low concentration of magnetic elements.
4. The apparatus of claim 1, wherein said particles deposited on said substrate are from a plasma produced by said high energy particles bombarding said first target and said second target.
5. The apparatus of claim 1 , wherein said coil creates ionization of said plasma in an open region defined within said coil.
6. The apparatus of claim 1 , wherein said coil provides coupling between a RF power source and said plasma.
7. The apparatus of claim 1, wherein said coil has negative potential.
8. The apparatus of claim 1, wherein said coil includes a plurality of turns.
9. An apparatus for sputtering multi-compound film layers onto a substrate, comprising: a sputtering chamber that produces high-energy particles; a target positioned in said sputtering chamber, said first target comprising non-magnetic materials; and a second target disposed in said sputtering chamber, said second target comprising magnetic materials; wherein high-energy particles bombard said first target and said second target and produce plasma that includes particles from both said first target and said second target, said particles in said plasma are sputtered on said substrate to produce multi-compound magnetic epilayers.
10. The apparatus of claim 9, wherein said second target is coil shaped.
11. The apparatus of claim 9, wherein said first target includes a low concentration of magnetic elements.
12. The apparatus of claim 10, wherein said coil creates ionization of said plasma in an open region defined within said coil.
13. The apparatus of claim 10, wherein said coil provides coupling between a RF power source and said plasma.
14. The apparatus of claim 10, wherein said coil has negative potential.
15. The apparatus of claim 10, wherein said coil includes a plurality of turns.
16. A method of producing multi-compound magnetic epilayers, comprising: providing a sputtering chamber; providing a first target dispose in said sputtering chamber, said first target comprises non-magnetic materials; providing a second target disposed in said sputtering chamber, said second target comprises magnetic materials; producing high-energy particles in said chamber; bombarding said first target and second target with said high-energy particles; producing plasma that includes particles from both said first target and said second target; and sputtering said particles in said plasma on said substrate to produce multi- compound magnetic epilayers.
17. The method of claim 16, wherein said second target is coil shaped.
18. The method of claim 16, wherein said first target includes a low concentration of magnetic elements.
19. The method of claim 17, wherein said coil creates ionization of said plasma in an open region defined within said coil.
20. The method of claim 17, wherein said coil provides coupling between a RF power source and said plasma.
21. The method of claim 17, wherein said coil has negative potential.
22. The method of claim 17, wherein said coil includes a plurality of turns.
EP02721741A 2001-04-11 2002-04-11 Apparatus and method for epitaxial sputter deposition of multi-compound magnetic epilayers with high deposition rate Withdrawn EP1386019A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US28351401P 2001-04-11 2001-04-11
US283514P 2001-04-11
PCT/US2002/011636 WO2002083976A1 (en) 2001-04-11 2002-04-11 Apparatus and method for epitaxial sputter deposition of multi-compound magnetic epilayers with high deposition rate

Publications (1)

Publication Number Publication Date
EP1386019A1 true EP1386019A1 (en) 2004-02-04

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Country Status (2)

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Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4929320A (en) * 1986-04-11 1990-05-29 Fuji Photo Film Co., Ltd. Method of making magneto-optical recording medium
US5178739A (en) * 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
JPH10134438A (en) * 1996-10-31 1998-05-22 Sony Corp Production of magneto-optical recording medium
US6375810B2 (en) * 1997-08-07 2002-04-23 Applied Materials, Inc. Plasma vapor deposition with coil sputtering

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO02083976A1 *

Also Published As

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