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EP1351317A3 - Composant photovoltaique et son procédé de fabrication - Google Patents

Composant photovoltaique et son procédé de fabrication Download PDF

Info

Publication number
EP1351317A3
EP1351317A3 EP03354025A EP03354025A EP1351317A3 EP 1351317 A3 EP1351317 A3 EP 1351317A3 EP 03354025 A EP03354025 A EP 03354025A EP 03354025 A EP03354025 A EP 03354025A EP 1351317 A3 EP1351317 A3 EP 1351317A3
Authority
EP
European Patent Office
Prior art keywords
layer
photovoltaic element
bulk
interface
interface layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03354025A
Other languages
German (de)
English (en)
Other versions
EP1351317A2 (fr
Inventor
Eiji Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of EP1351317A2 publication Critical patent/EP1351317A2/fr
Publication of EP1351317A3 publication Critical patent/EP1351317A3/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
EP03354025A 2002-03-19 2003-03-19 Composant photovoltaique et son procédé de fabrication Withdrawn EP1351317A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002076977A JP3679771B2 (ja) 2002-03-19 2002-03-19 光起電力装置、及び光起電力装置の製造方法
JP2002076977 2002-03-19

Publications (2)

Publication Number Publication Date
EP1351317A2 EP1351317A2 (fr) 2003-10-08
EP1351317A3 true EP1351317A3 (fr) 2010-12-15

Family

ID=28035478

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03354025A Withdrawn EP1351317A3 (fr) 2002-03-19 2003-03-19 Composant photovoltaique et son procédé de fabrication

Country Status (4)

Country Link
US (1) US6849917B2 (fr)
EP (1) EP1351317A3 (fr)
JP (1) JP3679771B2 (fr)
CN (1) CN1233044C (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1555695B1 (fr) * 2004-01-13 2011-05-04 Sanyo Electric Co., Ltd. Dispositif photovoltaique
JP2005203659A (ja) * 2004-01-19 2005-07-28 Sony Corp 光電変換材料およびその製造方法ならびに光電変換素子およびその製造方法ならびに電子装置およびその製造方法
JP4821033B2 (ja) * 2006-01-25 2011-11-24 石塚硝子株式会社 集光型太陽光発電ユニットおよびその柱状光学ガラス部材
KR20090007063A (ko) * 2007-07-13 2009-01-16 삼성에스디아이 주식회사 태양전지 및 이의 제조방법
US7960644B2 (en) * 2007-11-09 2011-06-14 Sunpreme, Ltd. Low-cost multi-junction solar cells and methods for their production
JP5059628B2 (ja) * 2008-01-10 2012-10-24 株式会社日立製作所 半導体装置
US7951640B2 (en) * 2008-11-07 2011-05-31 Sunpreme, Ltd. Low-cost multi-junction solar cells and methods for their production
US8796066B2 (en) * 2008-11-07 2014-08-05 Sunpreme, Inc. Low-cost solar cells and methods for fabricating low cost substrates for solar cells
WO2010077622A1 (fr) * 2008-12-08 2010-07-08 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Dispositifs électriques comprenant des électrodes métalliques dendritiques
CN101924145B (zh) * 2009-06-12 2013-01-23 大同大学 光电转换装置及其制法
US20130146132A1 (en) * 2010-08-09 2013-06-13 Kaneka Corporation Crystalline silicon-based solar cell
CN102097541B (zh) * 2010-11-02 2012-12-12 南开大学 一种提高产业化单室沉积非晶硅基薄膜电池效率的方法
JP5570654B2 (ja) * 2011-03-31 2014-08-13 京セラ株式会社 太陽電池素子および太陽電池モジュール
WO2013061637A1 (fr) * 2011-10-27 2013-05-02 三菱電機株式会社 Dispositif de conversion photoélectrique et son procédé de fabrication et module de conversion photoélectrique
JP6139261B2 (ja) * 2013-05-17 2017-05-31 株式会社カネカ 太陽電池およびその製造方法、ならびに太陽電池モジュール
JP6626482B2 (ja) * 2017-08-10 2019-12-25 株式会社東芝 半導体素子およびその製造方法
CN109075218A (zh) * 2017-12-21 2018-12-21 君泰创新（北京）科技有限公司 一种太阳能异质结电池及其制备方法
CN108321239A (zh) * 2017-12-21 2018-07-24 君泰创新（北京）科技有限公司 一种太阳能异质结电池及其制备方法
US20210184113A1 (en) * 2019-12-17 2021-06-17 International Business Machines Corporation Conductive Oxide Diffusion Barrier for Laser Crystallization

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62213281A (ja) * 1986-03-14 1987-09-19 Nippon Sheet Glass Co Ltd 透明導電膜
US5057244A (en) * 1983-10-20 1991-10-15 Ricoh Company, Ltd. Transparent, electrically conductive film
JPH07106614A (ja) * 1993-09-30 1995-04-21 Kyocera Corp 半導体素子の製法
US5626688A (en) * 1994-12-01 1997-05-06 Siemens Aktiengesellschaft Solar cell with chalcopyrite absorber layer
EP1063317A1 (fr) * 1998-03-05 2000-12-27 Asahi Glass Company Ltd. Cible de pulverisation cathodique, film conducteur transparent et son procede de production
JP2002025350A (ja) * 2000-07-11 2002-01-25 Sanyo Electric Co Ltd 透明導電膜付き基板及びその作製方法，それを用いたエッチング方法並びに光起電力装置
US6355353B1 (en) * 1999-03-09 2002-03-12 Nippon Sheet Glass Co., Ltd. Glass substrate having transparent conductive film
JP2002299657A (ja) * 2001-03-30 2002-10-11 Sanyo Electric Co Ltd 光起電力モジュール

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3271990B2 (ja) * 1997-03-21 2002-04-08 三洋電機株式会社 光起電力素子及びその製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5057244A (en) * 1983-10-20 1991-10-15 Ricoh Company, Ltd. Transparent, electrically conductive film
JPS62213281A (ja) * 1986-03-14 1987-09-19 Nippon Sheet Glass Co Ltd 透明導電膜
JPH07106614A (ja) * 1993-09-30 1995-04-21 Kyocera Corp 半導体素子の製法
US5626688A (en) * 1994-12-01 1997-05-06 Siemens Aktiengesellschaft Solar cell with chalcopyrite absorber layer
EP1063317A1 (fr) * 1998-03-05 2000-12-27 Asahi Glass Company Ltd. Cible de pulverisation cathodique, film conducteur transparent et son procede de production
US6355353B1 (en) * 1999-03-09 2002-03-12 Nippon Sheet Glass Co., Ltd. Glass substrate having transparent conductive film
JP2002025350A (ja) * 2000-07-11 2002-01-25 Sanyo Electric Co Ltd 透明導電膜付き基板及びその作製方法，それを用いたエッチング方法並びに光起電力装置
JP2002299657A (ja) * 2001-03-30 2002-10-11 Sanyo Electric Co Ltd 光起電力モジュール

Also Published As

Publication number Publication date
EP1351317A2 (fr) 2003-10-08
US20030178630A1 (en) 2003-09-25
CN1233044C (zh) 2005-12-21
JP2003273380A (ja) 2003-09-26
CN1445866A (zh) 2003-10-01
US6849917B2 (en) 2005-02-01
JP3679771B2 (ja) 2005-08-03

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