EP1011919B1 - Method of manufacturing a polishing pad - Google Patents
Method of manufacturing a polishing pad Download PDFInfo
- Publication number
- EP1011919B1 EP1011919B1 EP98938386A EP98938386A EP1011919B1 EP 1011919 B1 EP1011919 B1 EP 1011919B1 EP 98938386 A EP98938386 A EP 98938386A EP 98938386 A EP98938386 A EP 98938386A EP 1011919 B1 EP1011919 B1 EP 1011919B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- pad
- features
- polishing
- small scale
- thermoforming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 84
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000463 material Substances 0.000 claims abstract description 60
- 238000003856 thermoforming Methods 0.000 claims abstract description 20
- 239000012530 fluid Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 23
- 229920000642 polymer Polymers 0.000 claims description 16
- 229920002635 polyurethane Polymers 0.000 claims description 7
- 239000004814 polyurethane Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000004049 embossing Methods 0.000 claims description 5
- 229920002492 poly(sulfone) Polymers 0.000 claims description 5
- 239000004417 polycarbonate Substances 0.000 claims description 5
- 229920000515 polycarbonate Polymers 0.000 claims description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- 239000004800 polyvinyl chloride Substances 0.000 claims description 4
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 claims description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims description 3
- 150000002148 esters Chemical class 0.000 claims description 3
- 229920001038 ethylene copolymer Polymers 0.000 claims description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 2
- 239000004677 Nylon Substances 0.000 claims description 2
- 239000004697 Polyetherimide Substances 0.000 claims description 2
- 229920002873 Polyethylenimine Polymers 0.000 claims description 2
- 150000004820 halides Chemical class 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 2
- 229920001778 nylon Polymers 0.000 claims description 2
- 238000005191 phase separation Methods 0.000 claims description 2
- 229920001601 polyetherimide Polymers 0.000 claims description 2
- 229920001470 polyketone Polymers 0.000 claims description 2
- 239000002243 precursor Substances 0.000 claims description 2
- 125000001174 sulfone group Chemical group 0.000 claims description 2
- 238000012876 topography Methods 0.000 abstract description 5
- 238000009499 grossing Methods 0.000 abstract description 3
- 230000003750 conditioning effect Effects 0.000 description 11
- 239000002245 particle Substances 0.000 description 8
- 229920003023 plastic Polymers 0.000 description 7
- 239000004033 plastic Substances 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 6
- 238000007373 indentation Methods 0.000 description 6
- 239000003082 abrasive agent Substances 0.000 description 5
- -1 polyethylene copolymers Polymers 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- 239000004433 Thermoplastic polyurethane Substances 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002401 polyacrylamide Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229920001634 Copolyester Polymers 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229920002292 Nylon 6 Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229920003180 amino resin Polymers 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229920000891 common polymer Polymers 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical class OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000012056 semi-solid material Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 150000003673 urethanes Chemical class 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/22—Rubbers synthetic or natural
- B24D3/26—Rubbers synthetic or natural for porous or cellular structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
Definitions
- the present invention relates to a method of manufacturing a polishing pad as per the preamble of claim 1.
- An example of such a method is disclosed by document WO 94/04599 A.
- Integrated circuit fabrication generally requires polishing of one or more substrates, such as silicon, silicon dioxide, tungsten or aluminium. Such polishing is generally accomplished, using a polishing pad in combination with a polishing fluid.
- the present invention provides a method of manufacturing a polishing pad, the polishing pad comprising a pad material being an hydrophilic material having: i. a density greater than 0.5g/cm 3 ; ii. a critical surface tension greater than or equal to 34 mN/m; iii. a tensile modulus of 0.02 to 5 GPa; iv. a ratio of tensile modulus at 30°C to tensile modulus at 60°C of 1.0 to 2.5; v. a hardness of 25 to 80 Shore D; vi. a yield stress of 2.1 to 41 MPa (300-6000 psi); vii.
- hydrophilic material comprising at least one moiety from the group consisting of: 1. a urethane; 2. a carbonate; 3. an amide; 4. an ester; 5. an ether; 6. an acrylate; 7. a methacrylate; 8. an acrylic acid; 9. a methacrylic acid; 10. a sulphone; 11. an acrylamide; 12. a halide; and 13.
- hydroxide said hydrophilic material having a polishing surface, said surface having a plurality of features, said features having at least one dimension of greater than 0.01 mm to facilitate the flow of a polishing fluid, and facilitate chemical-mechanical polishing of a semiconductor device or a precursor to a semiconductor device; wherein said method comprises the steps of: thermoforming said plurality of features into the polishing surface; and characterised by: extruding said pad material upon a second material.
- the polishing materials of the present invention do not include felt-based polishing pads created by coalescing a polymer onto a fiber substrate, as described in U.S. Pat. No. 4,927,432 to Budinger, et al.
- the polishing surface has a topography produced by a thermoforming process.
- the topography consists of large and small features that facilitate the flow of polishing fluid and facilitate smoothing and planarizing.
- polish and any form thereof as used throughout this application, is intended to include “planarize” (and any corresponding forms).
- the present invention is innovative because it; 1) recognizes the detrimental effect on precision polishing that occurs from damage caused by the incorporation of surface features into prior art pads; 2) recognizes how the damage is created during the fabrication of polishing pads; 3) teaches how to manufacture pads having low levels of damage; 4) teaches how to manufacture pads with highly reproducible surface features and therefore more predictable pad performance relative to conventional pads produced by cutting or skiving; and 5) teaches novel means to incorporate surface features into a pad during manufacture. None of these aspects of the present invention were heretofore appreciated in the art and are truly a significant contribution to the art of precision polishing.
- polishing pads manufactured by the method of the present invention comprise a highly reproducible and advantageous surface topography with a minimum of surface damage such as indentations and protrusions often created during pad fabrication.
- Pad fabrication that includes cutting or skiving creates damage that tends to vary from pad to pad.
- Prior art pad fabrication may include cutting sections of a polymer cake to form pads. As a blade cuts through the cake it typically leaves directional surface damage, including indentations and protrusions from the pad surface. The damage generally varies from pad to pad as the cutting edge dulls.
- the pads manufactured by the method of the present invention are created with little or no cutting, machining or similar type fracturing of the polishing surface. Unwanted directional patterns such as those generated by skiving are generally eliminated. Surface features or a portion thereof are applied onto (or into) the pad, also without fracturing of the polishing surface. This eliminates the problems associated with prior art techniques.
- thermoforming is any process whereby the surface of the pad is heated and is permanently deformed by some means such as pressure or stress. Thermoforming reduces the extent of damage relative to conventional pads. Thermoforming also provides more reproducible features than cutting or machining because of the consistency of the surface of the thermoforming die. Therefore, pads manufactured by the method of the present invention exhibit more predictable performance and allow for optimum polishing parameters to be delineated.
- Surface features are incorporated into the surface of the polishing pad, by heating the pad surface until it softens and then forming, or shaping it, utilizing a die and pressure.
- the features preferably comprise one or more indentations having an average depth and/or width of greater than about 0.05 millimeters and preferably greater than about 0.1 millimeters. These features facilitate the flow of polishing fluid and thereby enhance polishing performance.
- Pads are extruded to create a sheet of material.
- the material may be formed into a polishing belt by creating a seam from the two ends of the sheet, or in an alternative embodiment, the sheet may be cut to form pads of any shape or size.
- compression molding is employed hereby a pliable polymer is placed in a die. The polymer is then compressed which causes it to spread throughout the mold. It then solidifies and is released from the mold.
- the pad material is extruded upon a second solid or semi-solid material, thereby causing the extruded material to be bonded to the second material after it has solidified.
- the second material provides reinforcement to the pad so that the solidified, extruded material need not be self-supporting.
- the second material can provide structural integrity to the pad, thereby providing improved performance, longevity and/or greater flexibility in manufacturing.
- surface features are embossed with a chilled roller employed to ensure that plastic flow subsequent to embossing is eliminated or significantly reduced.
- a chilled roller employed to ensure that plastic flow subsequent to embossing is eliminated or significantly reduced.
- polishing pads of the present invention In addition to surface features traditionally cut or machined into a pad, smaller features (less than 50 ⁇ ) are necessary for optimum polishing performance. These small scale features are often incorporated prior to the first use of the pad and periodically during pad use. This is referred to as “conditioning”. When conditioning is performed prior to use it is referred to as “preconditioning” and during use as reconditioning. During pad use the small scale features can experience unwanted plastic flow and can be fouled by debris. By conditioning, small scale features are regenerated. It has been surprisingly discovered that the polishing pads of the present invention generally require less reconditioning during use relative to conventional polishing pads. This is yet further evidence that the pads manufactured by the method of the present invention are generally superior to conventional pads.
- Pads manufactured by the method of the present invention may be conditioned with an abrasive material.
- the small scale features may be created by moving the polishing surface against the surface of an abrasive material.
- the abrasive material is a rotating structure (the abrasive material can be round, square, rectangular, oblong or of any geometric configuration) having a plurality of rigid particles embedded (and preferably, permanently affixed) upon the surface.
- the movement of the rigid particles against the pad surface causes the pad surface to undergo plastic flow, fragmentation or a combination thereof (at the point of contact with the particles).
- the abrasive surface need not rotate against the pad surface; the abrasive surface can move against the pad in any one of a number of ways, including vibration, linear movement, random orbitals, rolling or the like.
- the resulting plastic flow, fragmentation or combination thereof creates small scale features upon the pad's outer surface.
- the small scale features can comprise an indentation with a protrusion adjacent to at least one side.
- the protrusions provide at least 0.1 percent of the surface area of the pad's polishing surface, and the indentations have an average depth of less than 50 microns, more preferably less than 10 microns, and the protrusions have an average height of less than 50 microns and more preferably less than 10 microns.
- such surface modification with an abrasive surface will cause minimal abrasion removal of the polishing surface, but rather merely plows furrows into the pad without causing a substantial amount, if any, of pad material to separate from the polishing surface.
- abrasion removal of pad material is acceptable, so long as small scale features are produced.
- the preferred abrasive surface for conditioning is a disk which is preferably metal and which is preferably embedded with diamonds of a size in the range of 1 micron to 0.5 millimeters.
- the pressure between the conditioning disk and the polishing pad is preferably between 0.1 and about 25 pounds per square inch.
- the disk's speed of rotation is preferably in the range of 1 to 1000 revolutions per minute.
- a preferred conditioning disk is a four inch diameter, 100 grit diamond disk, such as the RESITM Disk manufactured by R. E. Science, Inc. Optimum conditioning was attained when the downforce was 10 lb. per square inch, platen speed was 75 rpm, the sweep profile was bell-shaped, the number of conditioning sweeps prior to use was 15 and the number of re-conditioning sweeps between wafers was 15.
- conditioning can be conducted in the presence of a conditioning fluid, preferably a water based fluid containing abrasive particles.
- All or some of the small scale features may be created during a thermoforming process by use of an innovative thermoforming die. Through the selective release of the pad from the die by a differential affinity to the pad material, desired small scale features can be obtained.
- the thermoforming die may have a differential affinity for the pad material. Portions of low affinity allow release of the pad with little or no disruption to the surface. Other portions of higher affinity inhibit release of the pad from the die, thereby causing plastic flow or fracturing of the surface in those areas. This process creates the desired small scale features.
- the differential affinity can be achieved by use of different materials, different die coatings or physical features of the die.
- thermoforming die is comprised of two or more materials having different affinities to the pad material. Upon release, portions of the pad surface adjacent to areas of high affinity are disrupted causing desirable surface features.
- the die surface is coated to create areas of low and high affinity.
- protrusions are incorporated into the die that have a shape that grabs the pad material in certain areas, causing creation of small scale features. In yet another embodiment, this grabbing effect is created by the protrusion material as opposed to the protrusion shape.
- Formation of surface features during the fabrication of the pad can diminish or even negate the necessity for preconditioning. Such formation also provides more controlled and faithful replication of the small scale features as compared to surface modification by abrasive means.
- any prepolymer chemistry can be used in accordance with the present invention, including polymer systems other than urethanes, provided the final product exhibits the following properties: a density of greater than 0.5g/cm 3 , more preferably greater than 0.7g/cm 3 and yet more preferably greater than about 0.9g/cm 3 ; a critical surface tension greater than or equal to 34 milliNewtons per meter; a tensile modulus of 0.02 to 5 GigaPascals; a ratio of the tensile modulus at 30° C to the modulus at 60° C in the range of 1.0 to 2.5; hardness of 25 to 80 Shore D; a yield stress of 300 to 6000 psi; a tensile strength of 500 to 15,000 psi, and an elongation to break up to 500%.
- the pad material is sufficiently hydrophilic to provide a critical surface tension greater than or equal to 34 milliNewtons per meter, more preferably greater than or equal to 37 milliNewtons per meter and most preferably greater than or equal to 40 milliNewtons per meter.
- Critical surface tension defines the wettability of a solid surface by noting the lowest surface tension a liquid can have and still exhibit a contact angle greater than zero degrees on that solid. Thus, polymers with higher critical surface tensions are more readily wet and are therefore more hydrophilic.
- Critical surface tension of common polymers are provided below: Polymer Critical Surface Tension (mN/m) Polytetrafluoroethylene 19 Polydimethylsiloxane 24 Silicone Rubber 24 Polybutadiene 31 Polyethylene 31 Polystyrene 33 Polypropylene 34 Polyester 39-42 Polyacrylamide 35-40 Polyvinyl alcohol 37 Polymethyl methacrylate 39 Polyvinyl chloride 39 Polysulfone 41 Nylon 6 42 Polyurethane 45 Polycarbonate 45
- the pad matrix is derived from at least:
- Preferred pad materials comprise urethane, carbonate, amide, sulfone, vinyl chloride, acrylate, methacrylate, vinyl alcohol, ester or acrylamide moieties.
- the pad material can be porous or non-porous.
- the matrix is non-porous; in another embodiment, the matrix is non-porous and free of fiber reinforcement.
- the pad material may also contain abrasives.
- the polishing material comprises: 1. a plurality of rigid domains which resists plastic flow during polishing; and 2. a plurality of less rigid domains which is less resistant to plastic flow during polishing.
- the rigid phase size in any dimension is preferably less than 100 microns, more preferably less than 50 microns, yet more preferably less than 25 microns and most preferably less than 10 microns.
- the non-rigid phase is also preferably less than 100 microns, more preferably less than 50 microns, more preferably less than 25 microns and most preferably less than 10 microns.
- Preferred dual phase materials include polyurethane polymers having a soft segment (which provides the non-rigid phase) and a hard segment (which provides the rigid phase). The domains are produced as the material is formed by a phase separation, due to incompatibility between the two (hard and soft) polymer segments.
- Hard and soft domains within the pad material can also be created: 1. by hard and soft segments along a polymer backbone; 2. by crystalline regions and non-crystalline regions within the pad material; 3. by alloying a hard polymer with a soft polymer; or 4. by combining a polymer with an organic or inorganic filler.
- the polishing materials of the present invention do not include felt-based polishing pads created by coalescing a polymer onto a fiber substrate, as described in U.S. Pat. No. 4,927,432 to Budinger, et al.
- the pads manufactured by the method of the present invention are preferably used in combination with a polishing fluid, which may include abrasive particles.
- a polishing fluid which may include abrasive particles.
- the polishing fluid is placed between the pad's polishing surface and the workpiece to be polished.
- the surface features allow for improved polishing fluid flow along the interface between the pad and the substrate to be polished and facilitate smoothing and planarizing.
- the improved flow of polishing fluid and interaction between the pad and workpiece generally allows for more efficient and effective polishing performance.
- the pads manufacture by the method of the present invention are preferably attached to a platen and then brought sufficiently proximate with a workpiece to be polished. Surface irregularities are removed from the workpiece at a rate which is dependent upon a number of parameters, including: pad pressure on the workpiece surface (or vice versa); the speed at which the pad and workpiece move in relation to one another; and the components of the polishing fluid. Generally, the pressure between the workpiece and the polishing pad surface is greater than 0.1 kilograms per square meter.
- the polishing fluid is preferably water based and may or may not require the presence of abrasive particles, depending upon the composition of the pad material.
- a material comprising abrasive particles may not require abrasive particles in the polishing fluid.
- This example illustrates the utility of an embossed pad of low hardness for polishing a soft metal such as aluminum.
- a thermoplastic polyurethane MP-1880 from J. P. Stevens
- This sheet was then subsequently embossed at elevated temperature with a hexagonal pattern such that the surface of the sheet consisted of raised hexagonal areas.
- each hexagonal area also contained finer grooves.
- the hexagonal areas were approximately 5 mm across and separated by 0.5 mm channels.
- the embossed sheet of polyurethane was laminated to pressure sensitive adhesive and cut into a circle shape, thus enabling it to be used as a polishing pad.
- the resulting pad was used for aluminum CMP polishing on a Westech 372U polisher. Using typical polishing conditions of downforce, carrier and platen speeds, removal rates of aluminum and oxide were 2280 and 70 A/min, giving an Al:Ox selectivity of 32:1.
- This example illustrates the utility of an embossed pad of high hardness for polishing an oxide inner-layer dielectric.
- a thermoplastic polyurethane (Texin 470D from Miles Inc.) of hardness 70 Shore D was extruded at temperature into a 50 mil sheet of material. This sheet was then subsequently embossed at elevated temperature using a similar pattern to that described in Example 1.
- the embossed sheet of polyurethane was laminated to pressure sensitive adhesive and cut into a circle shape, thus enabling it to be used as a polishing pad.
- the resulting pad in conjunction with ILD1300 slurry (made by Rodel Inc.), was used for Thermal Oxide CMP polishing on a Westech 372U polisher. Using typical polishing conditions of downforce, carrier and platen speeds, oxide removal rate was greater than 2000A/min and non-uniformity across the wafer less than 10%.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US5490697P | 1997-08-06 | 1997-08-06 | |
US54906P | 1997-08-06 | ||
PCT/US1998/016289 WO1999007515A1 (en) | 1997-08-06 | 1998-08-05 | Improved polishing pads and methods relating thereto |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1011919A1 EP1011919A1 (en) | 2000-06-28 |
EP1011919A4 EP1011919A4 (en) | 2000-11-02 |
EP1011919B1 true EP1011919B1 (en) | 2004-10-20 |
Family
ID=21994291
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP98938386A Expired - Lifetime EP1011919B1 (en) | 1997-08-06 | 1998-08-05 | Method of manufacturing a polishing pad |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1011919B1 (zh) |
JP (1) | JP2001513450A (zh) |
KR (1) | KR100499601B1 (zh) |
CN (1) | CN1265618A (zh) |
DE (1) | DE69827147T2 (zh) |
WO (1) | WO1999007515A1 (zh) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001518852A (ja) * | 1997-04-04 | 2001-10-16 | ローデル ホールディングス インコーポレイテッド | 改良研磨パッド及びこれに関連する方法 |
JP3918359B2 (ja) * | 1998-05-15 | 2007-05-23 | Jsr株式会社 | 研磨パッド用重合体組成物および研磨パッド |
JP4954377B2 (ja) * | 2000-02-04 | 2012-06-13 | 東洋ゴム工業株式会社 | 研磨パッド及びその製造方法 |
DE60114183T2 (de) * | 2000-05-27 | 2006-07-13 | Rohm and Haas Electronic Materials CMP Holdings, Inc., Newark | Polierkissen zum chemisch-mechanischen planarisieren |
US6477926B1 (en) | 2000-09-15 | 2002-11-12 | Ppg Industries Ohio, Inc. | Polishing pad |
US6679769B2 (en) | 2000-09-19 | 2004-01-20 | Rodel Holdings, Inc | Polishing pad having an advantageous micro-texture and methods relating thereto |
SG131737A1 (en) * | 2001-03-28 | 2007-05-28 | Disco Corp | Polishing tool and polishing method and apparatus using same |
US6568997B2 (en) | 2001-04-05 | 2003-05-27 | Rodel Holdings, Inc. | CMP polishing composition for semiconductor devices containing organic polymer particles |
US7214623B2 (en) * | 2003-10-13 | 2007-05-08 | International Business Machines Corporation | Planarization system and method using a carbonate containing fluid |
US20060089095A1 (en) | 2004-10-27 | 2006-04-27 | Swisher Robert G | Polyurethane urea polishing pad |
CN101115779B (zh) | 2005-03-08 | 2012-09-19 | 东洋橡胶工业株式会社 | 研磨垫及其制造方法 |
KR101134058B1 (ko) | 2005-05-17 | 2012-04-16 | 도요 고무 고교 가부시키가이샤 | 연마 패드 |
JP4884725B2 (ja) | 2005-08-30 | 2012-02-29 | 東洋ゴム工業株式会社 | 研磨パッド |
JP4898172B2 (ja) * | 2005-09-08 | 2012-03-14 | 日本ミクロコーティング株式会社 | 研磨パッド及びその製造方法並びに研磨方法 |
JP5031236B2 (ja) | 2006-01-10 | 2012-09-19 | 東洋ゴム工業株式会社 | 研磨パッド |
US20070197134A1 (en) | 2006-02-15 | 2007-08-23 | Applied Materials, Inc. | Polishing article with integrated window stripe |
KR101160064B1 (ko) | 2006-07-14 | 2012-06-26 | 생-고벵 아브라시프 | 기재를 갖지 않는 연마재 제품 및 광학 매체의 보수 방법 |
WO2008026451A1 (en) | 2006-08-28 | 2008-03-06 | Toyo Tire & Rubber Co., Ltd. | Polishing pad |
JP5008927B2 (ja) | 2006-08-31 | 2012-08-22 | 東洋ゴム工業株式会社 | 研磨パッド |
JP5078000B2 (ja) | 2007-03-28 | 2012-11-21 | 東洋ゴム工業株式会社 | 研磨パッド |
JP5314353B2 (ja) * | 2008-08-05 | 2013-10-16 | 旭ダイヤモンド工業株式会社 | 超砥粒チップ及び超砥粒工具 |
US8512427B2 (en) * | 2011-09-29 | 2013-08-20 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Acrylate polyurethane chemical mechanical polishing layer |
FR3025741B1 (fr) | 2014-09-15 | 2019-05-24 | Airbus Group Sas | Film adhesif multifonctionnel pour la protection de surface de pieces |
CN104889874B (zh) * | 2015-06-25 | 2017-08-04 | 蓝思科技(长沙)有限公司 | 一种蓝宝石抛光用吸附垫及其制备方法 |
CN108025420B (zh) * | 2015-09-25 | 2020-10-27 | 嘉柏微电子材料股份公司 | 具有高模量比的聚氨酯化学机械抛光垫 |
JP6380333B2 (ja) * | 2015-10-30 | 2018-08-29 | 株式会社Sumco | ウェーハ研磨装置およびこれに用いる研磨ヘッド |
CN105538047B (zh) * | 2015-12-11 | 2017-09-22 | 中国航空工业集团公司北京航空材料研究院 | 一种航空有机透明制件的表面研抛方法 |
US20180134918A1 (en) * | 2016-11-11 | 2018-05-17 | Jh Rhodes Company, Inc. | Soft polymer-based material polishing media |
CN110869166B (zh) * | 2017-07-11 | 2023-01-20 | 3M创新有限公司 | 包括适形涂层的磨料制品和由其形成的抛光系统 |
CN109794863A (zh) * | 2019-03-05 | 2019-05-24 | 北京国瑞升精机科技有限公司 | 一种亲水性抛光膜及其制备方法 |
CN110744444B (zh) * | 2019-10-29 | 2022-02-15 | 武汉新芯集成电路制造有限公司 | 研磨垫及研磨装置 |
EP4474106A1 (en) | 2022-02-02 | 2024-12-11 | Kuraray Co., Ltd. | Polishing layer, polishing pad, method for manufacturing polishing pad, and polishing method |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4129457A (en) * | 1977-05-23 | 1978-12-12 | International Business Machines Corporation | Post-polishing cleaning of semiconductor surfaces |
US4581287A (en) * | 1984-06-18 | 1986-04-08 | Creative Products Resource Associates, Ltd. | Composite reticulated foam-textile cleaning pad |
US4787732A (en) * | 1986-04-24 | 1988-11-29 | Nick Siviglia | Contact lens and method of making same |
US5396737B1 (en) * | 1989-01-18 | 1997-12-23 | Minnesota Mining & Mfg | Compound glazing or polishing pad |
US5007128B1 (en) * | 1989-01-18 | 1993-12-07 | Minnesota Mining And Manufacturing Company | Compounding,glazing or polishing pad |
JP2632738B2 (ja) * | 1990-04-27 | 1997-07-23 | 信越半導体 株式会社 | パッキングパッド、および半導体ウェーハの研磨方法 |
US5157877A (en) * | 1990-04-27 | 1992-10-27 | Shin-Etsu Handotai Co., Ltd. | Method for preparing a semiconductor wafer |
MY114512A (en) * | 1992-08-19 | 2002-11-30 | Rodel Inc | Polymeric substrate with polymeric microelements |
US5704987A (en) * | 1996-01-19 | 1998-01-06 | International Business Machines Corporation | Process for removing residue from a semiconductor wafer after chemical-mechanical polishing |
-
1998
- 1998-08-05 WO PCT/US1998/016289 patent/WO1999007515A1/en active IP Right Grant
- 1998-08-05 CN CN 98807897 patent/CN1265618A/zh active Pending
- 1998-08-05 DE DE69827147T patent/DE69827147T2/de not_active Expired - Lifetime
- 1998-08-05 KR KR10-2000-7001162A patent/KR100499601B1/ko not_active IP Right Cessation
- 1998-08-05 EP EP98938386A patent/EP1011919B1/en not_active Expired - Lifetime
- 1998-08-05 JP JP2000507086A patent/JP2001513450A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1011919A1 (en) | 2000-06-28 |
JP2001513450A (ja) | 2001-09-04 |
KR100499601B1 (ko) | 2005-07-07 |
DE69827147T2 (de) | 2006-03-02 |
DE69827147D1 (de) | 2004-11-25 |
EP1011919A4 (en) | 2000-11-02 |
WO1999007515A1 (en) | 1999-02-18 |
CN1265618A (zh) | 2000-09-06 |
KR20010022571A (ko) | 2001-03-26 |
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